Infineon Technologies IRFHS9301TR2PBF

Overview

IRFHS9301TR2PBF from Infineon Technologies is a P-channel enhancement-mode HEXFET® Power MOSFET designed for high-efficiency load and battery charge/discharge switching in space-constrained DC-DC and power management systems. It delivers -8.5 A continuous drain current at TC = 25°C, 37 mΩ R_DS(on) at V_GS = -10 V, and operates with -30 V V_DS rating - enabling robust operation in 12 V and 24 V industrial and automotive subsystems.

For engineers reviewing the IRFHS9301TR2PBF datasheet, IRFHS9301TR2PBF pinout, IRFHS9301TR2PBF application, or IRFHS9301TR2PBF equivalent, key selection criteria include its PQFN 2 mm × 2 mm package thermal performance (R_θJC = 13 °C/W), low gate charge (13 nC typ.), and body diode recovery characteristics (Q_rr = 110–170 nC) critical for synchronous buck and reverse-polarity protection designs.

Technical Context

This device employs a trench-gate P-channel silicon MOSFET structure optimized for low R_DS(on) and fast switching in high-side or reverse-current blocking configurations. Its gate threshold voltage range (-1.3 V to -2.4 V) ensures reliable turn-on with standard logic-level drive, while the integrated body diode supports bidirectional current handling in battery backup paths.

The PQFN package features bottom-side thermal pad and dual-source/drain terminals for minimized parasitic inductance and enhanced PCB heat spreading. Thermal resistance from junction-to-case (R_θJC) is specified at 13 °C/W, validated under 1-inch² copper board conditions - confirming suitability for thermally demanding portable and embedded power rails.

Key Specifications

Pinout & Package

PQFN 2 mm × 2 mm, 6-terminal package with exposed thermal pad on underside. Pin 1 (G), Pins 2/4/5/6 (D), Pin 3 (S). Designed for bottom-side thermal transfer and high-density routing.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel load switch applications.

Compared with SI2301DDS-T1-GE3 and DMN3025LFG-7, IRFHS9301TR2PBF balances moderate gate charge (13 nC), robust -30 V rating, and 37 mΩ R_DS(on) - making it optimal for 12–24 V battery and industrial load switching where thermal efficiency and transient immunity are jointly prioritized.

Availability

IRFHS9301TR2PBF is available at Aetrix Electronics and suitable for battery protection circuits, USB-C power delivery switches, and automotive body control modules requiring stable component supply and long-term production continuity.

Supply support for IRFHS9301TR2PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with leadership in silicon and wide-bandgap power devices.

This part belongs to Infineon's HEXFET® P-channel MOSFET product line, engineered for high-efficiency, high-reliability load switching in space- and thermally-constrained DC power systems.

FAQ

Is IRFHS9301TR2PBF suitable for high-side switching in 24 V automotive applications?

Yes. With -30 V V_DS, -8.5 A continuous current capability, and AEC-Q101 qualification (per Infineon documentation), it supports 24 V nominal systems and withstands ISO 7637-2 load-dump transients up to ±100 V when properly clamped. Its PQFN thermal performance ensures stable operation under hood temperatures.

What is the recommended gate drive voltage range for reliable turn-on?

A gate-to-source voltage of -4.5 V to -10 V is recommended. At -4.5 V, R_DS(on) rises to 52 mΩ (max); at -10 V, it achieves 37 mΩ (max). The typical V_GS(th) of -1.8 V ensures turn-on with 3.3 V logic, but full enhancement requires ≥-4.5 V to minimize conduction loss.

Does IRFHS9301TR2PBF include an integrated body diode, and what are its recovery characteristics?

Yes - it features a monolithic p-n body diode with V_SD = -1.2 V (typ.) at -7.8 A and reverse recovery charge Q_rr of 110–170 nC. trr is 30–45 ns, enabling use in synchronous rectification and flyback snubberless topologies where fast diode recovery reduces switching loss.

Can this MOSFET be used in parallel configurations for higher current handling?

Yes - its negative temperature coefficient of R_DS(on) promotes current sharing. However, layout symmetry, matched gate drive impedance, and individual current-sense feedback are required. Derating to ≤7 A per device is advised in parallel setups to maintain thermal stability and avoid localized hot spots.