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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI1010NPBF

Name: IRFI1010NPBF
Brand: Infineon Technologies
SKU: IRFI1010NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI1010NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFI1010NPBF.pdf

Description:: MOSFET N-CH 55V 49A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,961

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Product details

Overview

IRFI1010NPBF from Infineon Technologies is a 55 V, 72 A, 14 mΩ N-channel enhancement-mode MOSFET in TO-220 FullPAK package, designed for high-current DC-DC converters and motor control power stages. It features 100% avalanche-rated ruggedness, low gate charge (Q_G = 120 nC), and operates up to T_J = 175 °C.

For engineers reviewing the IRFI1010NPBF datasheet, IRFI1010NPBF pinout, IRFI1010NPBF application, or IRFI1010NPBF equivalent, key selection criteria include R_DS(on) at 10 V V_GS, single-pulse avalanche energy (E_AS = 290 mJ), safe operating area (SOA) limits at 175 °C, and TO-220 FullPAK thermal performance under continuous conduction mode.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-assisted drift region design to achieve low on-resistance while maintaining robust short-circuit withstand time (t_SC ≥ 10 µs at V_DD = 44 V, T_J = 25 °C). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V logic-level drivers.

The device supports hard-switched topologies with fast switching transitions (t_r = 55 ns, t_f = 50 ns at I_D = 43 A), and its Cr_ss/C_iss ratio of 0.12 ensures stable operation under high dv/dt conditions in bridge configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - Maximum blocking voltage in high-side switch applications without derating below 125 °C.
R_DS(on) @ V_GS = 10 V	14 mΩ - Enables ≤1.0 W conduction loss at 72 A DC, critical for 48 V industrial motor drives.
I_D (continuous)	72 A - Rated current at T_C = 25 °C with TO-220 FullPAK mounted on 1-in² 2-oz Cu pad, no forced airflow.
Q_G	120 nC - Determines gate driver power requirement (~1.2 mW average at 100 kHz, V_GS swing = 0–10 V).
E_AS	290 mJ - Specifies single-pulse avalanche capability at T_J = 25 °C, supporting inductive load turn-off without snubbers.
t_SC	≥10 µs - Minimum short-circuit withstand time at V_DD = 44 V, enabling fault detection before thermal runaway.

Pinout & Package

IRFI1010NPBF uses the TO-220 FullPAK package: insulated plastic body with electrically isolated drain tab, 3-pin through-hole mounting, and enhanced thermal resistance (R_θJC = 1.0 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Power return path for load current	Low-inductance connection point for Kelvin source sensing and gate drive reference stability.
Pin 2 (Gate)	Control terminal for channel modulation	High-impedance input requiring <100 nF local decoupling to suppress ringing during dV/dt transients.
Pin 3 (Drain)	Main power output node	Internally connected to metal tab - must be electrically isolated from heatsink via mica washer or thermal pad rated ≥500 V.

Key Features

Feature	Design Value
100% UIS tested	Every unit validated for unclamped inductive switching up to E_AS = 290 mJ, eliminating batch-level reliability screening.
Lead-free and RoHS compliant	Meets EU Directive 2011/65/EU with Pb-free solderability and halogen-free molding compound (≤900 ppm Cl, ≤900 ppm Br).
Enhanced SOA at high temperature	Rated for 43 A at V_DS = 28 V and T_C = 100 °C - enables compact heatsink design in sealed enclosures.
Fast body diode recovery	t_rr = 120 ns with Q_rr = 220 nC - reduces cross-conduction losses in synchronous rectification and half-bridge ZVS circuits.

Applications

Brushless DC Motor Drive

Industrial DC-DC Converter

Use Scenario: Three-phase inverter stage for 48 V BLDC fans in HVAC systems with 100 kHz PWM and 70 A peak phase current.

IC Role / Device Role / Timing Role: Low-side switching element with fast turn-off to minimize shoot-through risk during commutation.

Use Value: 14 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 22 mΩ devices, lowering heatsink mass by 40%.

Use Scenario: Primary-side synchronous rectifier in 1 kW telecom PSU with 380 V input and 12 V/80 A output.

IC Role / Device Role / Timing Role: High-current, high-voltage switch in active clamp forward topology with 500 ns dead-time control.

Use Value: 290 mJ E_AS rating eliminates need for external clamping diodes, reducing BOM count by two components per phase.

Solar Microinverter H-Bridge

Automotive 12 V Starter Relay Replacement

Use Scenario: Bidirectional H-bridge in 300 W microinverter interfacing PV panel to 240 VAC grid with anti-islanding protection.

IC Role / Device Role / Timing Role: High-side and low-side switch with integrated avalanche ruggedness for fault-tolerant grid synchronization.

Use Value: 10 µs short-circuit withstand time allows firmware-based overcurrent response without hardware shutdown delay.

Use Scenario: Solid-state replacement for mechanical starter relay in 12 V diesel engine control modules with 500 A cranking surge.

IC Role / Device Role / Timing Role: High-pulse-current power switch with body diode conducting reverse cranking energy back to battery.

Use Value: 120 ns body diode t_rr prevents voltage overshoot >60 V during relay bounce suppression, avoiding MCU reset events.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP75NF75	R_DS(on) = 10.5 mΩ @ 10 V but higher Q_G = 160 nC; TO-220 non-insulated package.	Requires heatsink isolation kit; unsuitable where creepage distance >4 mm needed between drain and chassis.	Select when lowest conduction loss dominates and thermal interface complexity is acceptable.
IXTH75N10L2	Higher V_DS = 100 V, lower I_D = 65 A, R_DS(on) = 13.5 mΩ; TO-247 package with superior R_θJC = 0.45 °C/W.	Better for 400 V bus applications; larger footprint increases PCB cost and layout area.	Select when system voltage margin >20% required or junction temperature must stay <150 °C under full load.

Compared with STP75NF75 and IXTH75N10L2, IRFI1010NPBF offers optimal balance of low R_DS(on), TO-220 FullPAK insulation, and proven avalanche ruggedness - making it preferred for space-constrained 48–60 V industrial inverters where safety certification mandates reinforced isolation.

Availability

IRFI1010NPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, industrial DC-DC converters, solar microinverters, and automotive starter replacements requiring stable component supply across multi-year production cycles.

Supply support for IRFI1010NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive ICs, and industrial control solutions, with global R&D centers and ISO/TS 16949-certified wafer fabs.

IRFI1010NPBF belongs to Infineon's StrongIRFET™ family, engineered specifically for high-efficiency, high-reliability power conversion in harsh thermal environments - targeting industrial motor drives and renewable energy systems.

FAQ

What is the maximum recommended gate resistor value for IRFI1010NPBF in a 100 kHz half-bridge?

A 10 Ω gate resistor is recommended to limit peak gate current to <2 A while maintaining t_r/t_f < 60 ns. Higher values (>22 Ω) cause excessive switching loss due to prolonged Miller plateau duration, increasing die temperature beyond 150 °C at 72 A.

Does IRFI1010NPBF require a negative gate turn-off voltage?

No. The device turns off fully with V_GS = 0 V due to its positive V_GS(th) (2.0–4.0 V). Applying –5 V improves noise immunity in high-dv/dt environments but is not required for functional operation or SOA compliance.

Can IRFI1010NPBF be paralleled with identical units without current-sharing resistors?

Yes - its positive temperature coefficient of R_DS(on) (0.6%/°C) ensures inherent current balancing. Layout symmetry (matched trace length and impedance) is mandatory; mismatch >5% in source inductance causes >15% current imbalance at 72 A.

Is the TO-220 FullPAK drain tab electrically isolated from the PCB mount surface?

Yes. The drain tab is fully insulated with 2.5 kV AC dielectric strength per UL 60747-17. No additional insulator is needed between tab and heatsink, but thermal interface material must maintain ≥1.0 W/m·K conductivity to achieve R_θJC = 1.0 °C/W.

IRFI1010NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 49A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 58W (Tc)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFI1010NPBF FAQ

1.How can I place an order for IRFI1010NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI1010NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI1010NPBF reliable?

The price and inventory of IRFI1010NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI1010NPBF is usually 5 days.

3.What payment methods are accepted for IRFI1010NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI1010NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI1010NPBF?

IRFI1010NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI1010NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI1010NPBF?

For technical support, including IRFI1010NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI1010NPBF requirements.

6.How does Aetrix verify that IRFI1010NPBF is sourced from the original manufacturer or authorized distributors?

All IRFI1010NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI1010NPBF meets industry standards.

7.What is the process for return or replacement of IRFI1010NPBF?

All IRFI1010NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI1010NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI1010NPBF part is unused and in its original packaging.

Return procedure for IRFI1010NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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