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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI1310N

Name: IRFI1310N
Brand: Infineon Technologies
SKU: IRFI1310N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI1310N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFI1310N.pdf

Description:: MOSFET N-CH 100V 24A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:5,372

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Product details

Overview

IRFI1310N from Infineon Technologies (formerly International Rectifier) is a 100V, 24A N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak package, featuring R_DS(on) = 0.036 Ω at V_GS = 10 V, 140 A pulsed drain current, and 2.7 °C/W junction-to-case thermal resistance. It serves as a high-efficiency main switch in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRFI1310N datasheet, IRFI1310N pinout, IRFI1310N application, or IRFI1310N equivalent, key selection criteria include its isolated TO-220 Full-Pak construction (2.5 kV_RMS isolation), avalanche-rated ruggedness (E_AS = 420 mJ), and fast switching (t_r = 56 ns, t_f = 40 ns) under hard-switched conditions.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to minimize conduction loss while maintaining robust unclamped inductive switching capability. Its integrated body diode exhibits V_SD = 1.3 V at 13 A and trr = 180–270 ns, enabling moderate-frequency synchronous rectification or freewheeling in buck and half-bridge topologies.

The TO-220 Full-Pak package integrates electrical isolation between drain tab and leads via high-dielectric molding compound-eliminating external insulators-and achieves creepage distance of 4.8 mm and sink-to-lead isolation equivalent to a 100 µm mica sheet. Thermal interface requires only single-screw mounting (1.1 N·m torque).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - supports 48 V bus systems with 2× safety margin against transients
R_DS(on)	0.036 Ω - enables <1 W conduction loss at 13 A continuous drain current
I_D (T_C = 25°C)	24 A - delivers full rated output in forced-air-cooled industrial SMPS
E_AS	420 mJ - withstands single unclamped inductive energy spikes without failure
R_θJC	2.7 °C/W - allows direct heatsink coupling for <30°C temperature rise at 56 W dissipation
Q_g	120 nC - determines gate driver current requirement (~1.2 A avg. for 100 ns turn-on)
t_r/t_f	56 ns / 40 ns - enables efficient operation up to ~200 kHz in hard-switched converters

Pinout & Package

IRFI1310N is housed in an isolated TO-220 Full-Pak package with drain-connected metal tab, optimized for direct heatsink mounting and high-voltage isolation. The package provides 2.5 kV_RMS isolation and 4.8 mm creepage distance between drain and leads.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; threshold 2.0–4.0 V
D (Drain)	High-side power terminal	Internally connected to isolated metal tab; electrically referenced to heatsink
S (Source)	Power return and reference node	Common connection point for gate drive return, current sensing, and low-side switching

Key Features

Feature	Design Value
Fully avalanche-rated	Guarantees survivability under unclamped inductive switching (E_AS = 420 mJ, I_AR = 22 A)
Isolated TO-220 Full-Pak	Eliminates need for insulating washers or sil-pads in commercial-industrial mounting
Low Q_gd/Q_g ratio	58/120 nC = 0.48 - improves hard-switching EMI and reduces Miller-induced shoot-through risk
High dv/dt immunity	5.0 V/ns peak diode recovery dv/dt rating - suppresses false turn-on during commutation
Lead-free construction	Complies with RoHS Directive 2011/65/EU; Pb-free plating on leads and tab

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 24 V–48 V BLDC motor control in HVAC blowers and conveyor systems.

IC Role / Device Role / Timing Role: High-side N-channel switch in three-phase inverter leg; driven by isolated gate driver.

Use Value: Low R_DS(on) reduces I²R losses at 15–20 A RMS, extending thermal margin in sealed enclosures.

Use Scenario: Primary-side switching element in 80 PLUS Titanium-certified 1 kW server power supply.

IC Role / Device Role / Timing Role: Main switch in LLC resonant half-bridge; operates at 200–300 kHz with ZVS.

Use Value: Fast tr/tf and low C_oss (450 pF) support zero-voltage switching, reducing switching loss by >30% vs. legacy MOSFETs.

Telecom DC-DC Converters

EV Onboard Charger Stage

Use Scenario: 48 V input, 12 V output non-isolated buck converter for telecom shelf management.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side synchronous buck stage.

Use Value: Body diode V_SD = 1.3 V and trr ≤ 270 ns enable efficient synchronous rectification without external Schottky.

Use Scenario: AC/DC PFC boost switch in 6.6 kW OBC for light-duty EVs.

IC Role / Device Role / Timing Role: Boost switch operating at 65–100 kHz with 100 V bus clamping.

Use Value: 100 V V_DSS and 140 A pulsed rating accommodate line surges and inrush currents during grid synchronization.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, isolated-package Power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP12NK100Z	100 V, 12 A, R_DS(on) = 0.55 Ω, TO-220FP (non-isolated), Zener-protected gate	Lower current rating and no isolation require external insulator and limit use to low-power (<300 W) designs	Select when gate protection priority outweighs isolation and conduction loss
IXTH16N100L	100 V, 16 A, R_DS(on) = 0.065 Ω, TO-247AC, non-isolated, ultra-low Q_g (65 nC)	Larger footprint and no built-in isolation increase BOM count and assembly cost in industrial mounts	Select when higher switching frequency (>500 kHz) and lower gate drive loss justify added mechanical complexity

Compared with STP12NK100Z and IXTH16N100L, IRFI1310N uniquely combines 24 A current handling, 0.036 Ω on-resistance, and factory-integrated 2.5 kV_RMS isolation-enabling simplified, reliable, and thermally efficient designs in space-constrained industrial power stages.

Availability

IRFI1310N is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, server power supplies, and EV onboard charger stages requiring stable component supply and long-term manufacturability.

Supply support for IRFI1310N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line targets high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems-designed for rugged operation under repetitive stress and transient overload.

FAQ

Is IRFI1310N pin-compatible with standard TO-220 MOSFETs?

No. Although it shares the TO-220 outline, IRFI1310N uses the Full-Pak variant where the drain is internally connected to the isolated metal tab. Standard TO-220 parts expose the drain lead; using IRFI1310N in those footprints without verifying tab isolation may cause short circuits.

What is the maximum recommended case temperature for continuous operation?

The absolute maximum case temperature is 100°C per datasheet derating curves. At T_C = 100°C, continuous drain current is limited to 17 A. For reliable 24 A operation, maintain T_C ≤ 25°C using ≥150 cm² heatsink with forced air or ≥300 cm² passive surface.

Does IRFI1310N require a negative gate voltage for safe turn-off?

No. The device has a gate threshold voltage range of 2.0–4.0 V and is fully enhanced at V_GS = 10 V. A gate drive of 0 V suffices for turn-off; applying –5 V to –10 V is unnecessary and not specified in the Absolute Maximum Ratings (V_GS = ±20 V).

Can IRFI1310N be used in parallel configurations?

Yes, but with strict layout and gate drive matching. Its positive R_DS(on) temperature coefficient (0.11 V/°C) supports current sharing, yet mismatched gate loop inductance or trace resistance can cause dynamic imbalance. Use individual 10 Ω gate resistors and Kelvin source connections for >2 devices in parallel.

IRFI1310N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 24A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 36mOhm @ 13A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 120 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 56W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IRFI1310N FAQ

1.How can I place an order for IRFI1310N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI1310N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI1310N reliable?

The price and inventory of IRFI1310N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI1310N is usually 5 days.

3.What payment methods are accepted for IRFI1310N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI1310N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI1310N?

IRFI1310N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI1310N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI1310N?

For technical support, including IRFI1310N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI1310N requirements.

6.How does Aetrix verify that IRFI1310N is sourced from the original manufacturer or authorized distributors?

All IRFI1310N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI1310N meets industry standards.

7.What is the process for return or replacement of IRFI1310N?

All IRFI1310N units undergo pre-shipment inspection (PSI). If there is an issue with IRFI1310N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI1310N part is unused and in its original packaging.

Return procedure for IRFI1310N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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