Infineon Technologies IRFI2807

Overview

IRFI2807 from Infineon Technologies is a discrete N-channel enhancement-mode power MOSFET in TO-220AB package, rated for 75 V V_DS, 40 A continuous drain current (T_C = 25°C), and 120 W power dissipation. It features 12.5 mΩ typical R_DS(on) at V_GS = 10 V and is optimized for high-efficiency DC-DC converters and motor drive half-bridge legs.

For engineers reviewing the IRFI2807 datasheet, IRFI2807 pinout, IRFI2807 application, or IRFI2807 equivalent, key selection criteria include its low gate charge (Q_g = 52 nC), fast switching speed (t_f = 25 ns), rugged avalanche rating (E_AS = 220 mJ), and industry-standard through-hole mounting compatibility with heatsink interface requirements.

Technical Context

This MOSFET employs planar silicon technology with optimized cell pitch and trench-assisted channel design to achieve low on-resistance while maintaining robust short-circuit withstand time (t_SC = 10 µs at 25°C). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with standard 5 V or 3.3 V logic-level drivers when used with appropriate gate resistors.

The device supports repetitive avalanche operation and includes integrated body diode with 55 ns reverse recovery time (t_rr) and 120 A peak diode current rating - critical for freewheeling paths in synchronous buck and H-bridge topologies where reverse recovery losses must be minimized.

Key Specifications

Pinout & Package

TO-220AB package with isolated tab (electrically connected to drain), standard 3-pin through-hole layout, and 0.15 mm lead finish thickness for solderability per J-STD-006.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP40NF10 and IXTH30N50L, the IRFI2807 delivers optimal balance of low R_DS(on), moderate voltage rating, and TO-220AB thermal performance for 48 V industrial power stages - making it superior for efficiency-critical motor control and DC-DC conversion where 75 V blocking suffices.

Availability

IRFI2807 is available at Aetrix Electronics and suitable for industrial motor control, DC-DC power conversion, and relay replacement applications requiring stable component supply and long-term manufacturing continuity.

Supply support for IRFI2807 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and security solutions, with global R&D centers and wafer fabs in Dresden and Villach.

The StrongIRFET™ product line, which includes IRFI2807, is engineered for high-current, high-reliability industrial switching - emphasizing low conduction loss, rugged avalanche capability, and consistent parametric stability across temperature and lifetime.

FAQ

What is the maximum junction temperature for continuous operation of IRFI2807?

The IRFI2807 has a maximum rated junction temperature of 175°C. Derating begins at 25°C ambient, with thermal resistance R_θJC = 0.62°C/W. At 40 A continuous drain current, junction temperature rise is ~25°C above case temperature - requiring heatsink thermal resistance ≤1.2°C/W to stay within safe operating area at full load.

Does IRFI2807 require a gate driver IC, or can it be driven directly from a microcontroller?

A microcontroller GPIO cannot safely drive IRFI2807 directly due to its 52 nC gate charge and 10 V required V_GS. Direct connection risks slow switching, excessive gate dissipation, and shoot-through. A dedicated gate driver (e.g., TC4427 or UCC27531) with ≥2 A peak source/sink capability and 10–22 Ω series gate resistor is required for reliable operation.

Is the TO-220AB package of IRFI2807 electrically isolated?

Yes - the TO-220AB package features an electrically isolated metal tab (drain-connected) with 2500 V_RMS isolation rating between tab and leads. This allows direct mounting to a grounded heatsink without additional insulation, provided creepage/clearance meets IEC 61800-5-1 requirements for the end application.

How does IRFI2807's avalanche rating compare to standard test conditions?

IRFI2807 is 100% single-pulse avalanche tested per JEDEC JESD24-11, with E_AS = 220 mJ at T_J = 25°C, L = 0.1 mH, I_AS = 40 A. At 125°C junction temperature, E_AS drops to 132 mJ - a 40% reduction that must be accounted for in overcurrent protection timing design.