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Infineon Technologies IRFI4110GPBF
- Part No.:
- IRFI4110GPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-220-3 Full Pack
- Datasheet:
-
IRFI4110GPBF.pdf
- Description:
- MOSFET N-CH 100V 72A TO220AB FP
- Quantity:
- Payment:
- Shipping:
Inventory:6,944
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Product details
Overview
IRFI4110GPBF from Infineon is a 100V, 72A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220 Full-Pak package, optimized for high-efficiency synchronous rectification and hard-switched SMPS. It delivers typ. RDS(on) of 3.7 mΩ at VGS = 10 V, 43 A, supports 290 A pulsed drain current, and features 71 mJ single-pulse avalanche energy - enabling robust operation in UPS and high-frequency DC-DC converters.
For engineers reviewing the IRFI4110GPBF datasheet, IRFI4110GPBF pinout, IRFI4110GPBF application, or IRFI4110GPBF equivalent, key selection criteria include its 2.46 °C/W junction-to-case thermal resistance, 50 ns typical reverse recovery time at 25°C, enhanced body diode dV/dt capability (27 V/ns), and lead-free/halogen-free compliance for industrial power designs.
Technical Context
This MOSFET employs planar silicon process with optimized cell layout to achieve low conduction loss and high avalanche ruggedness. Its gate charge profile shows Qgd = 49 nC and Qgs = 40 nC at VDS = 50 V, supporting fast switching with controlled dv/dt in hard-switched topologies.
The integrated body diode exhibits typ. VSD = 1.3 V at IS = 43 A and TJ = 25°C, with trr = 50–75 ns and Qrr = 100–150 nC - critical for minimizing commutation losses in synchronous rectifier stages.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V input DC-DC and 100 V bus systems. |
| RDS(on) typ. | 3.7 mΩ @ VGS = 10 V, ID = 43 A - Delivers <1.7 W conduction loss at 43 A, reducing heatsink requirements. |
| ID cont. @ TC = 25°C | 72 A - Sustains full-load current with case temperature held at 25°C; derates linearly above 25°C. |
| EAS | 71 mJ - Single-pulse avalanche energy limit; allows safe unclamped inductive switching up to defined IAR and tav. |
| trr | 50 ns typ. @ TJ = 25°C - Enables >1 MHz switching in resonant or ZVS circuits without excessive diode recovery loss. |
| RθJC | 2.46 °C/W - Confirmed junction-to-case thermal resistance; permits accurate thermal modeling when mounted on heatsink. |
| Qg | 190–290 nC - Total gate charge range determines driver strength requirement for 10–100 ns switching transitions. |
Pinout & Package
IRFI4110GPBF uses the TO-220 Full-Pak package: insulated plastic housing with metal tab (drain-connected) and three leads - Gate (G), Drain (D), Source (S). Mounting torque: 10 lbf·in (1.1 N·m); soldering temp: 300°C for 10 s at 1.6 mm from case.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control terminal | Receives 10 V drive to fully enhance; threshold VGS(th) = 2.0–4.0 V; requires ≥2.6 Ω gate resistor to damp ringing. |
| D (Drain) | High-side power terminal | Internally connected to metal tab; must be electrically isolated from heatsink unless system ground referenced. |
| S (Source) | Power return / reference node | Serves as local ground for gate drive; carries full load current (72 A continuous); connects to PCB ground plane. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | 27 V/ns - Prevents spurious turn-on during high-speed voltage transients in bridge-leg configurations. |
| Full avalanche rating | 71 mJ EAS, 43 A IAR - Enables reliable operation under unclamped inductive switching without external snubbers. |
| Lead-free and halogen-free | RoHS-compliant construction - Meets IPC/JEDEC J-STD-020 moisture sensitivity level 1; no post-process reflow restrictions. |
| Characterized SOA and capacitance | Ciss = 9540 pF, Coss = 680 pF, Crss = 300 pF - Supports precise gate drive design and EMI prediction in hard-switched converters. |
Applications
| Server VRM Synchronous Rectification | Industrial UPS Inverter Stage |
|---|---|
|
Use Scenario: High-current, high-efficiency 12 V → 1 V conversion in CPU/GPU VRMs using multiphase buck topology. IC Role / Device Role / Timing Role: Low-side synchronous rectifier switch replacing Schottky diodes; switched at 300–1000 kHz with precise dead-time control. Use Value: Reduces conduction loss by >60% vs. 1.2 V Schottky, lowering output stage temperature rise and improving full-load efficiency to >95%. |
Use Scenario: Bidirectional DC link switching in online double-conversion UPS inverters handling 3–10 kVA loads. IC Role / Device Role / Timing Role: Hard-switched power switch in H-bridge output stage; operates at 5–20 kHz with active clamping or snubber networks. Use Value: Withstands repetitive 43 A avalanche events and 290 A pulsed currents, ensuring reliability during battery discharge surges and grid faults. |
| Telecom DC-DC Brick | Motor Drive Half-Bridge |
|
Use Scenario: 48 V input, 12/24 V isolated DC-DC modules for 5G base station power distribution. IC Role / Device Role / Timing Role: Primary-side MOSFET in phase-shifted full-bridge or LLC resonant converter; driven with zero-voltage switching. Use Value: Low Coss (680 pF) and Crss (300 pF) minimize capacitive turn-off loss and improve ZVS margin across wide load range. |
Use Scenario: 24–48 V BLDC motor drives for industrial automation requiring regenerative braking and high peak torque. IC Role / Device Role / Timing Role: High-side or low-side switch in half-bridge configuration; commutated at ≤20 kHz with body-diode freewheeling. Use Value: 1.3 V typ. VSD and 50 ns trr reduce freewheeling loss and electromagnetic noise during PWM decay phases. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current, 100 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N10F7 | RDS(on) = 4.2 mΩ (typ.), Qg = 160 nC, TO-220FP package, no avalanche rating published | Lacks specified EAS; not validated for unclamped inductive switching | Prefer where gate drive is limited and avalanche stress is absent; verify SOA in hard-switched layouts. |
| IXTH72N10L2 | RDS(on) = 3.8 mΩ (typ.), Qg = 220 nC, TO-247 package, 100 V, 72 A, EAS = 110 mJ | Larger footprint, higher gate charge, superior avalanche margin but higher cost | Choose for higher-reliability industrial inverters needing extended avalanche endurance beyond 71 mJ. |
Compared with STP110N10F7 and IXTH72N10L2, IRFI4110GPBF offers balanced trade-offs: lower Qg than IXTH72N10L2 for faster switching, and verified avalanche ruggedness absent in STP110N10F7 - making it optimal for cost-sensitive, high-frequency SMPS with moderate surge demands.
Availability
IRFI4110GPBF is available at Aetrix Electronics and suitable for server VRMs, industrial UPS systems, and telecom DC-DC bricks requiring stable component supply, long-lifecycle support, and RoHS-compliant power semiconductors.
Supply support for IRFI4110GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.
This device belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in switching-mode power supplies, UPS, and motor control applications.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFI4110GPBF supports 51 A continuous drain current at TC = 100°C, per Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 Full-Pak package and ensures junction temperature remains ≤175°C under steady-state conditions with appropriate heatsinking.
Is the body diode suitable for synchronous rectification without external Schottky diodes?
Yes - the integrated body diode has characterized trr = 50–75 ns and Qrr = 100–150 nC, enabling efficient synchronous rectification in buck and LLC converters up to ~1 MHz. Its low VSD (1.3 V typ.) and high dV/dt ruggedness (27 V/ns) reduce recovery loss and prevent false triggering.
Does IRFI4110GPBF require a gate resistor, and what value is recommended?
A gate resistor is required to control switching speed and suppress oscillation. Infineon recommends RG = 2.6 Ω for standard switching waveforms (per dynamic test conditions). Lower values increase dv/dt stress; higher values slow transitions and raise switching loss - optimize based on EMI and thermal constraints.
Can IRFI4110GPBF be used in surface-mount designs?
No - the TO-220 Full-Pak package is explicitly not recommended for surface-mount applications per Infineon's package documentation. It requires through-hole mounting with mechanical screw attachment (6-32 or M3) and heatsink interface; SMT alternatives would require different package types like D²PAK or LFPAK.
IRFI4110GPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-220-3 Full Pack
- Packaging:
- Bulk
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 100 V
- Current - Continuous Drain (Id) @ 25°C:
- 72A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 43A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 290 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 9540 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 61W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-220AB Full-Pak
IRFI4110GPBF FAQ
1.How can I place an order for IRFI4110GPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFI4110GPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFI4110GPBF reliable?
The price and inventory of IRFI4110GPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4110GPBF is usually 5 days.
3.What payment methods are accepted for IRFI4110GPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4110GPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFI4110GPBF?
IRFI4110GPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFI4110GPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFI4110GPBF?
For technical support, including IRFI4110GPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4110GPBF requirements.
6.How does Aetrix verify that IRFI4110GPBF is sourced from the original manufacturer or authorized distributors?
All IRFI4110GPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4110GPBF meets industry standards.
7.What is the process for return or replacement of IRFI4110GPBF?
All IRFI4110GPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4110GPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFI4110GPBF part is unused and in its original packaging.
Return procedure for IRFI4110GPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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