Infineon Technologies IRFI4228PBF

Overview

IRFI4228PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode HEXFET® Power MOSFET in TO-220AB Full-Pak package, rated for 150 V V_DS, 34 A continuous drain current at T_C = 25°C, and 12.2 mΩ R_DS(on) @ 10 V_GS. It is optimized for plasma display panel (PDP) sustain, energy recovery, and pass switch circuits requiring fast switching, low gate charge (73 nC typ.), and robust repetitive avalanche capability.

For engineers reviewing the IRFI4228PBF datasheet, IRFI4228PBF pinout, IRFI4228PBF application, or IRFI4228PBF equivalent, key selection criteria include its 150°C maximum junction temperature, 61 A repetitive peak current rating at T_C = 100°C, low EPULSE energy per pulse (e.g., 110 µJ @ 100 A), and body diode reverse recovery charge (Q_rr = 230–350 nC) critical for high-frequency PDP sustain stage design.

Technical Context

This MOSFET employs advanced planar process technology to achieve low R_DS(on) and high dV/dt immunity while maintaining tight threshold voltage distribution (V_GS(th) = 3.0–5.0 V). Its internal structure integrates a fast, low-loss body diode with t_rr = 74–110 ns and Q_rr = 230–350 nC, enabling efficient unclamped inductive switching in energy recovery topologies.

The device supports high-speed gate drive via low total gate charge (Q_g = 73–110 nC) and low gate-to-drain charge (Q_gd = 20 nC typ.), resulting in short rise/fall times and reduced shoot-through risk. Thermal performance is defined by R_θJC = 2.73°C/W, allowing reliable operation up to 150°C junction temperature under forced-air or heatsink-cooled conditions.

Key Specifications

Pinout & Package

IRFI4228PBF uses the TO-220AB Full-Pak package - a through-hole, insulated-mount variant of TO-220 with electrically isolated tab (drain-connected) and enhanced thermal path to heatsink. The package features three leads: Gate (G), Drain (D), and Source (S), with pin 1 = Gate, pin 2 = Drain, pin 3 = Source when viewed from front (label side) with leads down and tab facing away.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current power switching applications.

Compared with STP16NF15 and IXTP120N15T, IRFI4228PBF delivers optimal balance of current capability (34 A), low R_DS(on) (12.2 mΩ), and proven PDP-specific ruggedness - making it the most cost-effective and thermally matched solution for production-grade plasma display sustain modules.

Availability

IRFI4228PBF is available at Aetrix Electronics and suitable for plasma display panel (PDP) sustain circuits, energy recovery switches, and industrial 150 V DC bus pass applications requiring stable component supply and long-term lifecycle support.

Supply support for IRFI4228PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power semiconductors, microcontrollers, and sensor solutions for industrial, automotive, and power conversion markets.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-efficiency switching in demanding plasma display, UPS, and industrial power systems where ruggedness, thermal stability, and fast recovery are essential.

FAQ

What is the maximum gate-to-source voltage rating for IRFI4228PBF?

The absolute maximum V_GS rating is ±30 V. Exceeding this value risks permanent gate oxide damage. Recommended gate drive is 10–15 V for full enhancement with margin; gate resistors should limit dv/dt-induced coupling during fast switching to avoid unintended turn-on.

Does IRFI4228PBF have a built-in body diode, and what are its key parameters?

Yes - it integrates a monolithic N-channel MOSFET body diode with V_SD = 1.3 V max at 20 A, t_rr = 74–110 ns, and Q_rr = 230–350 nC at T_J = 25°C. These values are measured under standardized conditions (I_S = 20 A, di/dt = 100 A/µs) and define its suitability for freewheeling and resonant recovery roles.

Can IRFI4228PBF be used in surface-mount designs?

No - the TO-220AB Full-Pak package is explicitly not recommended for surface-mount applications per the datasheet. It requires through-hole mounting with mechanical screw attachment to a heatsink; the insulated tab must be electrically isolated unless intentionally tied to drain potential.

What thermal resistance values apply to IRFI4228PBF in typical mounting configurations?

R_θJC = 2.73°C/W (junction-to-case) is fixed by package construction. Actual R_θJA depends on PCB copper area, heatsink size, and airflow; typical values range from 18°C/W (with large heatsink) to 65°C/W (no heatsink, still air). Derating curves in Fig 11 confirm 34 A maximum at T_C = 25°C, dropping to ~15 A at T_C = 100°C.