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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI4229PBF

Name: IRFI4229PBF
Brand: Infineon Technologies
SKU: IRFI4229PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI4229PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3

Datasheet:: IRFI4229PBF.pdf

Description:: MOSFET N-CH 250V 19A TO220AB

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFI4229PBF from Infineon Technologies is a 250 V, 19 A (T_C = 25°C), TO-220 Full-Pak N-channel HEXFET® Power MOSFET optimized for sustain, energy recovery, and pass switch functions in plasma display panel (PDP) drivers. It delivers 38 mΩ R_DS(on) at V_GS = 10 V, 770 µJ EPULSE at T_J = 25°C, and supports 150°C junction operation with repetitive avalanche capability.

For engineers reviewing the IRFI4229PBF datasheet, IRFI4229PBF pinout, IRFI4229PBF application, or IRFI4229PBF equivalent, key selection criteria include low EPULSE rating for PDP sustain efficiency, high repetitive peak current (32 A @ T_C = 100°C), fast switching (t_r = 17 ns, t_f = 13 ns), and robust thermal performance (R_θJC = 2.73°C/W).

Technical Context

This MOSFET employs advanced planar process technology to minimize on-resistance per die area while maintaining high ruggedness. Its gate charge profile (Q_g = 73 nC typ., Q_gd = 24 nC) enables fast, controlled turn-on/turn-off critical for high-frequency PDP sustain waveforms.

The device integrates a robust body diode (V_SD = 1.3 V @ I_S = 11 A, t_rr = 120–180 ns) and exhibits specified unclamped inductive switching behavior (E_AS = 110 mJ, E_AR = 4.6 mJ), supporting reliable energy recovery in resonant PDP circuits.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS max	250 V - Withstands full PDP sustain bus voltage with margin against transients
R_DS(on) typ. @ 10 V	38 mΩ - Enables low conduction loss in high-current sustain pulses (≥11 A)
I_RP max @ T_C = 100°C	32 A - Supports repetitive high-current energy recovery without thermal runaway
E_PULSE typ.	770 µJ @ T_J = 25°C - Quantifies single-pulse energy handling during PDP sustain switching
t_r/t_f	17 ns / 13 ns - Ensures sharp edge control for precise timing in multi-kHz sustain waveforms
T_J max	150°C - Allows sustained operation under high ambient and self-heating conditions in sealed PDP enclosures
R_θJC	2.73°C/W - Enables effective heatsink coupling for forced-air or passive cooling in driver modules

Pinout & Package

IRFI4229PBF uses the TO-220 Full-Pak package with isolated tab (drain-connected), standard lead configuration, and screw-mount compatibility (6-32 or M3, 10 lbf·in torque). The package provides low thermal resistance and mechanical stability for high-reliability PDP driver mounting.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control input	Receives 10–15 V logic-level drive; low Q_g (73 nC) minimizes driver power and propagation delay
D (Drain)	Main power output	Connected to isolated metal tab; handles 250 V blocking and 72 A pulsed drain current
S (Source)	Power return / reference	Common node for gate drive return and current sensing; internal source inductance = 7.5 nH

Key Features

Feature	Design Value
Low EPULSE rating	770 µJ (25°C) - Reduces localized heating during high-frequency sustain pulses, extending lifetime in PDP modules
High repetitive peak current	32 A @ T_C = 100°C - Sustains repeated energy recovery cycles without derating in thermally constrained designs
Fast switching transitions	t_r = 17 ns, t_f = 13 ns - Minimizes overlap loss and improves waveform fidelity in >200 kHz sustain drivers
150°C junction rating	Rated continuous operation up to 150°C - Eliminates need for oversized heatsinks in compact PDP chassis layouts
Repetitive avalanche capability	E_AR = 4.6 mJ - Absorbs inductive kickback from PDP panel capacitance without failure during fault conditions

Applications

Plasma Display Panel Sustain Driver

Energy Recovery Circuit

Use Scenario: High-voltage, high-frequency switching to maintain plasma cell illumination across large-area PDP panels.

IC Role / Device Role / Timing Role: Main sustain switch operating at 200–500 kHz with 250 V bus and 11–19 A peak current.

Use Value: Low R_DS(on) (38 mΩ) and fast switching reduce conduction and switching losses, improving overall panel efficiency by ≥8% vs. legacy MOSFETs.

Use Scenario: Recycling discharge energy from PDP panel capacitance back into the sustain supply rail.

IC Role / Device Role / Timing Role: Bidirectional energy transfer switch synchronized with sustain pulse edges using body diode conduction.

Use Value: Optimized body diode (t_rr = 120 ns, Q_rr = 540 nC) minimizes reverse recovery loss and EMI during energy recapture.

Pass Switch for Column Drivers

PDP X/Y Address Driver Output Stage

Use Scenario: Selectively enabling column electrode drive paths during addressing phase of PDP operation.

IC Role / Device Role / Timing Role: Low-loss series pass element conducting up to 12 A continuously at T_C = 100°C.

Use Value: Linear derating factor (0.37 W/°C) and 18 W power dissipation @ 100°C ensure stable operation without active cooling.

Use Scenario: Final-stage output switch delivering high-voltage address pulses to X/Y electrode lines.

IC Role / Device Role / Timing Role: Fast-turning, avalanche-rated switch handling 250 V transients and 72 A pulsed currents.

Use Value: Repetitive avalanche rating (E_AR = 4.6 mJ) prevents failure during line-to-line capacitive coupling events in dense electrode arrays.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current PDP sustain switch applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP24N25	V_DS = 250 V, R_DS(on) = 60 mΩ, Q_g = 65 nC, T_J = 150°C	Higher conduction loss reduces efficiency in sustained high-duty-cycle PDP operation	Prefer when lower gate charge is prioritized over on-resistance; verify thermal margin at 100°C case temp
IXTP20N25P	V_DS = 250 V, R_DS(on) = 55 mΩ, E_PULSE = 520 µJ, T_J = 175°C	Lower EPULSE rating limits safe energy handling in high-current sustain pulses	Choose only if higher junction temperature rating (175°C) is required and pulse energy remains below 520 µJ

Compared with STP24N25 and IXTP20N25P, IRFI4229PBF offers superior PDP-specific optimization: lowest R_DS(on) (38 mΩ), highest EPULSE (770 µJ), and tailored body diode recovery-making it the most efficient choice for high-reliability, high-efficiency sustain and energy recovery stages.

Availability

IRFI4229PBF is available at Aetrix Electronics and suitable for plasma display panel sustain drivers, PDP energy recovery circuits, and high-voltage column pass switches requiring stable component supply and long-term industrial availability.

Supply support for IRFI4229PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in plasma display, industrial motor control, and resonant power conversion applications.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFI4229PBF supports 12 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in its Absolute Maximum Ratings table. This value reflects thermal derating due to reduced heat dissipation capability at elevated case temperatures and must be applied with appropriate heatsinking to maintain T_J ≤ 150°C.

Does IRFI4229PBF have avalanche capability, and is it rated for repetitive use?

Yes-IRFI4229PBF is fully rated for repetitive avalanche operation with E_AR = 4.6 mJ (typ.) and V_{DS(Avalanche)} = 300 V. This capability is validated per JEDEC JESD24-11 and enables reliable operation during inductive switching events common in PDP energy recovery circuits without external snubbers.

Can IRFI4229PBF be used in surface-mount designs?

No-IRFI4229PBF uses the TO-220 Full-Pak package, which is explicitly not recommended for surface-mount applications per Infineon's package documentation. It requires through-hole mounting with mechanical screw attachment (6-32 or M3, 10 lbf·in torque) and heatsink interface for thermal and mechanical integrity.

What is the typical gate threshold voltage, and how does it vary with temperature?

V_GS(th) is specified from 3.0 V to 5.0 V at T_J = 25°C, with a temperature coefficient of −12 mV/°C. At 150°C junction temperature, the threshold drops approximately 1.5 V, ensuring stable turn-on behavior across the full operating range without unintended conduction drift.

IRFI4229PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 19A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 46mOhm @ 11A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4480 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 46W (Tc)

Operating Temperature:: -40°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB

IRFI4229PBF FAQ

1.How can I place an order for IRFI4229PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI4229PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI4229PBF reliable?

The price and inventory of IRFI4229PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4229PBF is usually 5 days.

3.What payment methods are accepted for IRFI4229PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4229PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI4229PBF?

IRFI4229PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI4229PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI4229PBF?

For technical support, including IRFI4229PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4229PBF requirements.

6.How does Aetrix verify that IRFI4229PBF is sourced from the original manufacturer or authorized distributors?

All IRFI4229PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4229PBF meets industry standards.

7.What is the process for return or replacement of IRFI4229PBF?

All IRFI4229PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4229PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI4229PBF part is unused and in its original packaging.

Return procedure for IRFI4229PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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