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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI4410ZPBF

Name: IRFI4410ZPBF
Brand: Infineon Technologies
SKU: IRFI4410ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI4410ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFI4410ZPBF.pdf

Description:: MOSFET N-CH 100V 43A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFI4410ZPBF from Infineon is a 100V, 43A N-channel enhancement-mode HEXFET® Power MOSFET in TO-220 Full-Pak package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 7.9 mΩ typical R_DS(on) at V_GS = 10 V, 310 mJ single-pulse avalanche energy, and features enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching.

For engineers reviewing the IRFI4410ZPBF datasheet, IRFI4410ZPBF pinout, IRFI4410ZPBF application, or IRFI4410ZPBF equivalent, key selection criteria include its 3.2°C/W junction-to-case thermal resistance, 47 W maximum power dissipation at T_C = 25°C, and validated 170 A pulsed drain current - critical for UPS, telecom DC/DC, and motor drive half-bridge designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized gate oxide and body diode design to achieve low gate charge (81 nC typ.) and fast switching: 15 ns turn-on delay, 27 ns rise time, and 43 ns turn-off delay under standard test conditions (V_DD = 65 V, R_G = 2.7 Ω, I_D = 26 A). Its C_iss = 4910 pF and C_oss = 330 pF support stable operation up to several hundred kHz.

The device integrates a co-packaged, optimized intrinsic body diode with 1.3 V forward voltage at 26 A and 47–71 ns reverse recovery time (T_J = 25°C), enabling reliable bidirectional conduction in synchronous rectifier topologies without external Schottky diodes.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; supports 48 V and 60 V bus systems with margin.
R_DS(on) typ.	7.9 mΩ @ V_GS = 10 V, I_D = 26 A - Enables <1.5 W conduction loss at 43 A continuous, reducing heatsink requirements.
Q_g	81 nC typ. - Low gate drive energy enables efficient operation with standard gate drivers (e.g., IR2110) at >200 kHz.
E_AS	310 mJ - Thermally limited single-pulse avalanche rating allows safe operation during inductive load transients in UPS and motor drives.
R_θJC	3.2 °C/W - Enables direct mounting to heatsinks with predictable thermal path; supports 47 W continuous dissipation at T_C = 25°C.
trr / Q_rr	47 ns / 110 nC @ T_J = 25°C - Fast, low-charge body diode recovery minimizes switching losses in synchronous rectification.

Pinout & Package

IRFI4410ZPBF uses the TO-220 Full-Pak package: insulated plastic case with metal tab electrically connected to the Drain terminal, designed for through-hole mounting and direct heatsink attachment via M3 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main power output / heat sink interface	Electrically connected to metal tab; must be isolated from chassis unless circuit topology requires common-drain configuration.
Gate	Control input	Receives 10 V logic-level signal; internal R_G = 0.9 Ω limits ringing but requires careful PCB layout to avoid shoot-through.
Source	Power return / reference node	Serves as local ground for gate drive; source inductance directly impacts switching speed and dV/dt stress.

Key Features

Feature	Design Value
Enhanced body diode dV/dt and dI/dt capability	Validated 100 A/µs di/dt and >50 V/ns dV/dt immunity - prevents parasitic turn-on and latch-up in high-di/dt synchronous rectifiers.
Fully characterized avalanche SOA	Single-pulse E_AS = 310 mJ with defined L = 0.91 mH, R_G = 25 Ω test conditions - enables deterministic overvoltage transient design.
Lead-free and RoHS-compliant	Meets JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes without derating.
Improved dynamic dV/dt ruggedness	Rated for >50 V/ns across full temperature range - reduces need for external snubbers in hard-switched PFC stages.

Applications

High-Efficiency Synchronous Rectification

Uninterruptible Power Supply (UPS)

Use Scenario: Secondary-side rectification in 48 V–60 V output LLC resonant converters for server PSUs.

IC Role / Device Role / Timing Role: N-channel power switch replacing Schottky diodes; driven by transformer-coupled gate signals synchronized to primary-side switching.

Use Value: Reduces conduction loss by >40% vs. 60 V Schottky, improving full-load efficiency from 94.2% to 95.8% in 1 kW designs.

Use Scenario: Inverter stage H-bridge in line-interactive UPS with 24 V or 48 V battery input.

IC Role / Device Role / Timing Role: High-current, low-R_DS(on) switching element handling 30 A continuous and 170 A surge loads during transfer events.

Use Value: 7.9 mΩ R_DS(on) limits on-state loss to <7 W per device at 30 A, enabling compact thermal design without forced air.

Hard-Switched DC/DC Converters

Industrial Motor Drive Half-Bridge

Use Scenario: Primary-side switch in 100–200 kHz flyback or forward converters for industrial control power supplies.

IC Role / Device Role / Timing Role: Main power switch operating in hard-switched mode with clamped inductive loads and moderate dv/dt stress.

Use Value: 310 mJ E_AS withstands leakage inductance spikes without failure, eliminating need for active clamping circuits.

Use Scenario: Low-side switch in 24–48 V BLDC motor drives for automated guided vehicles (AGVs).

IC Role / Device Role / Timing Role: PWM-controlled power stage element conducting 43 A continuous with 170 A peak during acceleration bursts.

Use Value: TO-220 Full-Pak's 3.2°C/W R_θJC enables 43 A operation with ≤65°C case rise using passive heatsinking only.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF10	R_DS(on) = 10.5 mΩ (higher), Q_g = 95 nC (higher), E_AS = 250 mJ (lower)	Limited to lower-frequency (<100 kHz) hard-switched applications due to higher switching losses	Prefer when cost sensitivity outweighs efficiency and avalanche margin requirements
IPP040N10N5	R_DS(on) = 4.0 mΩ (lower), Q_g = 62 nC (lower), TO-220FP package with same pinout	Better suited for high-density, high-efficiency designs where <5 mΩ conduction loss is mandatory	Select when upgrading from IRFI4410ZPBF for improved thermal performance and reduced gate drive burden

Compared with STP40NF10 and IPP040N10N5, IRFI4410ZPBF offers balanced trade-offs: superior avalanche ruggedness versus STP40NF10 and better body diode recovery than IPP040N10N5 - making it optimal for synchronous rectification where diode quality and transient robustness are decisive.

Availability

IRFI4410ZPBF is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS), high-frequency DC/DC converter, and industrial motor drive applications requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFI4410ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to the HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in telecom, computing, and industrial systems where ruggedness and repeatable avalanche performance are essential.

FAQ

Is IRFI4410ZPBF suitable for surface-mount assembly?

No. The TO-220 Full-Pak package is explicitly not recommended for surface-mount applications per Infineon's package documentation. It requires through-hole mounting with mechanical screw attachment to a heatsink. Surface-mount alternatives like the IPB40N10N5 (TO-263) should be considered for SMT designs.

What is the maximum allowable gate-to-source voltage for reliable operation?

The absolute maximum V_GS is ±30 V. Operation above ±20 V risks gate oxide degradation; recommended drive is 10 V for full R_DS(on) specification and 12–15 V for margin in high-noise environments. Gate voltage exceeding +20 V or below −20 V must be avoided even transiently.

Does IRFI4410ZPBF have a specified maximum di/dt rating for body diode conduction?

Yes. The device is characterized for di/dt up to 100 A/µs at T_J = 25°C and 125°C, with measured reverse recovery current (I_RRM) capped at 2.5 A under those conditions. This rating is validated in Fig. 18–19 of the datasheet and confirms suitability for high-di/dt synchronous rectification.

Can IRFI4410ZPBF replace IRF4410 in existing designs?

Yes, with qualification. IRFI4410ZPBF is the lead-free, RoHS-compliant successor to IRF4410, sharing identical electrical specs, pinout, and package. Key differences include updated process control for tighter R_DS(on) distribution and enhanced avalanche testing - no layout or drive circuit changes are required for drop-in replacement.

IRFI4410ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9.3mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4V @ 150µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 4910 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 47W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFI4410ZPBF FAQ

1.How can I place an order for IRFI4410ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI4410ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI4410ZPBF reliable?

The price and inventory of IRFI4410ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI4410ZPBF is usually 5 days.

3.What payment methods are accepted for IRFI4410ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI4410ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI4410ZPBF?

IRFI4410ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI4410ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI4410ZPBF?

For technical support, including IRFI4410ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI4410ZPBF requirements.

6.How does Aetrix verify that IRFI4410ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFI4410ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI4410ZPBF meets industry standards.

7.What is the process for return or replacement of IRFI4410ZPBF?

All IRFI4410ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFI4410ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI4410ZPBF part is unused and in its original packaging.

Return procedure for IRFI4410ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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