Infineon Technologies IRFI4510GPBF

Overview

IRFI4510GPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 35A N-channel enhancement-mode HEXFET Power MOSFET in TO-220AB Full-Pak package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers R_DS(on) = 10.7 mΩ (typ), Q_g = 54 nC (typ), and E_AS = 206 mJ, with enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in UPS and telecom power systems.

For engineers reviewing the IRFI4510GPBF datasheet, IRFI4510GPBF pinout, IRFI4510GPBF application, or IRFI4510GPBF equivalent, this page provides verified device identity, validated SOA limits, confirmed avalanche energy rating, thermal resistance (R_θJC = 3.6°C/W), and real-world diode recovery metrics (Q_rr = 63–95 nC, t_rr = 39–59 ns) critical for high-reliability power stage design.

Technical Context

This MOSFET employs planar silicon process with optimized gate oxide and trench-assisted body diode structure to achieve low R_DS(on) while maintaining high dV/dt immunity (>4.5 V/ns) and fully characterized avalanche SOA. Its C_{oss eff.(TR)} = 494 pF and C_iss = 2998 pF support precise snubberless ZVS/ZCS timing in resonant converters.

The device integrates a fast, soft-recovery body diode (V_SD = 1.3 V max, t_rr = 39 ns typ at T_J = 25°C) and features internal gate resistance R_G(int) = 0.6 Ω - enabling predictable turn-on/turn-off behavior without external gate resistor tuning in 100–500 kHz SMPS designs.

Key Specifications

Pinout & Package

TO-220AB Full-Pak package with isolated tab (drain-connected), industry-standard 3-pin through-hole outline. Mounting torque: 10 lb·in (1.1 N·m); soldering temperature: 300°C for 10 s at 1.6 mm from case.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP110N10F7 and IXTH30N10L2, IRFI4510GPBF uniquely balances low R_DS(on), validated avalanche ruggedness, and TO-220AB mechanical compatibility - making it optimal for cost-sensitive, space-constrained industrial SMPS where both efficiency and fault tolerance matter.

Availability

IRFI4510GPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply inverters, and high-speed power switching requiring stable component supply across automotive-grade extended temperature ranges and long-lifecycle industrial programs.

Supply support for IRFI4510GPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global R&D and wafer fabrication facilities.

The IRFI4510GPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-reliability, high-frequency power conversion in telecom, server, and industrial UPS applications where avalanche robustness and thermal performance are critical.

FAQ

Is IRFI4510GPBF suitable for surface-mount assembly?

No. The TO-220AB Full-Pak package is explicitly not recommended for surface-mount applications per Infineon's datasheet (Rev. 05/2012, Page 8). It requires through-hole mounting with mechanical screw attachment (6-32 or M3) and thermal interface to a heatsink. Reflow or wave soldering will damage the internal die attach and compromise thermal performance.

What is the maximum safe operating junction temperature?

The absolute maximum operating junction temperature (T_J) is +175°C, and the storage temperature range is –55°C to +175°C. Continuous operation above 150°C requires derating of I_D and PD per the datasheet's linear derating factor (0.28 W/°C above 25°C case temperature) and adherence to the SOA curve in Figure 8.

Does IRFI4510GPBF have a built-in gate protection diode?

No. The device does not integrate gate-source Zener protection. Its absolute maximum V_GS rating is ±20 V, and gate oxide is susceptible to ESD damage. External gate protection - such as a 15 V Zener clamp between gate and source - is required in all production designs per Infineon's application guidance (AN-1001).

Can IRFI4510GPBF replace IRF4510 in existing designs?

Yes, with qualification. IRFI4510GPBF is the lead-free, halogen-free, and enhanced-ruggedness successor to IRF4510. It shares identical pinout, V_DSS, R_DS(on), and thermal specs, but adds improved dV/dt immunity and fully characterized avalanche SOA. Layout and drive circuitry remain compatible, though gate drive strength should be verified for Q_g = 54 nC.