Infineon Technologies IRFI530N

Overview

IRFI530N from Infineon Technologies (formerly International Rectifier) is a 100V, 12A N-channel enhancement-mode Power MOSFET in TO-220 Full-Pak isolated package, featuring R_DS(on) = 0.11 Ω at V_GS = 10 V, 150 mJ single-pulse avalanche energy rating, and 2.5 kV_RMS isolation - used in industrial AC/DC power supplies, motor control H-bridges, and DC-DC synchronous rectification stages.

For engineers reviewing the IRFI530N datasheet, IRFI530N pinout, IRFI530N application, or IRFI530N equivalent, key selection criteria include its isolated TO-220 Full-Pak thermal performance (R_θJC = 3.7 °C/W), fast switching (t_r = 27 ns, t_f = 25 ns), body diode recovery (t_rr = 130–190 ns), and rugged unclamped inductive switching capability.

Technical Context

This HEXFET® device employs fifth-generation silicon processing to minimize conduction loss while maintaining high dv/dt immunity (5.0 V/ns) and full avalanche ruggedness. Its isolated TO-220 Full-Pak construction integrates high-voltage insulation (2.5 kV_RMS) and low thermal resistance without external insulators.

The MOSFET operates with gate threshold voltage of 2.0–4.0 V, exhibits 6.4 S transconductance at V_DS = 50 V, and supports pulsed drain current up to 60 A. Its internal source/drain inductances (L_S = 7.5 nH, L_D = 4.5 nH) and capacitance profile (C_iss = 640 pF, C_oss = 160 pF) are optimized for hard-switched SMPS topologies.

Key Specifications

Pinout & Package

IRFI530N uses the TO-220 Full-Pak package: electrically isolated metal tab (drain-connected), screw-mountable with 1.1 N·m torque, 2.5 kV_RMS isolation, and 4.8 mm creepage distance between sink and leads.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with STP12NK100Z and IRF530NPbF, IRFI530N uniquely delivers 100 V/12 A performance with built-in 2.5 kV_RMS isolation and avalanche ruggedness - making it optimal for cost-sensitive, safety-critical industrial power stages where heatsink grounding and transient robustness are mandatory.

Availability

IRFI530N is available at Aetrix Electronics and suitable for industrial motor drives, AC/DC power supplies, DC-DC synchronous rectifiers, and uninterruptible power systems requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFI530N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The HEXFET® Power MOSFET product line was developed for high-efficiency, high-reliability switching in industrial power conversion - emphasizing low R_DS(on), fast switching, and rugged avalanche performance.

FAQ

Is IRFI530N compatible with standard TO-220 heatsinks?

Yes - the TO-220 Full-Pak package mounts directly to standard TO-220 heatsinks using a single M3 screw or clip, with no insulating hardware required due to its 2.5 kV_RMS isolation and 4.8 mm creepage distance. Mounting torque must be limited to 1.1 N·m to avoid package damage.

What is the maximum safe operating frequency for IRFI530N in hard-switched converters?

IRFI530N supports hard-switched operation up to 200 kHz in well-designed layouts, based on its 27 ns rise time, 25 ns fall time, and 44 nC gate charge. At 100 kHz, typical total switching loss is <0.5 W with 12 Ω gate resistor and 10 V drive; layout parasitics and gate drive strength critically affect upper limit.

Does IRFI530N require a gate resistor, and what value is recommended?

Yes - a gate resistor is required to control dV/dt and prevent oscillation. For 12 A switching with 10 V drive, a 12 Ω resistor is recommended per datasheet test conditions (Fig. 10). Lower values (5–10 Ω) improve switching speed but increase EMI; higher values (22–47 Ω) reduce ringing at the cost of increased switching loss.

Can IRFI530N replace IRF530N in existing designs without modification?

No - although electrically identical, IRFI530N uses an isolated TO-220 Full-Pak package versus the non-isolated TO-220AB of IRF530N. Direct replacement requires verifying heatsink grounding, clearance, and mechanical fit; insulation hardware may be removed, but thermal interface and mounting torque must be requalified.