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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFI9530N

Name: IRFI9530N
Brand: Infineon Technologies
SKU: IRFI9530N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFI9530N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFI9530N.pdf

Description:: MOSFET P-CH 100V 7.7A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:6,989

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Product details

Overview

IRFI9530N from Infineon Technologies (formerly International Rectifier) is a P-channel enhancement-mode silicon power MOSFET in TO-220AB package, rated for -100 V V_DS, 12 A I_D (T_C = 25°C), and 0.3 Ω R_DS(on) at V_GS = -10 V. It operates as a high-side switch in DC-DC converters, motor control H-bridges, and industrial power supplies.

For engineers reviewing the IRFI9530N datasheet, IRFI9530N pinout, IRFI9530N application, or IRFI9530N equivalent, key selection criteria include verified P-channel conduction capability, thermal performance under pulsed load conditions, gate charge (Q_g = 60 nC), safe operating area (SOA) limits, and compatibility with standard ±10 V gate drive circuits.

Technical Context

This device uses planar vertical DMOS technology with optimized cell pitch and field oxide termination to achieve stable avalanche-rated operation and low gate-to-drain charge (Q_gd = 24 nC). Its body diode exhibits t_rr = 200 ns and Q_rr = 1.2 µC at I_F = 6 A, enabling moderate-frequency synchronous rectification.

The MOSFET features a fully isolated mounting tab (TO-220AB), supports continuous drain current up to 12 A at T_C = 25°C, and maintains R_DS(on) ≤ 0.4 Ω across -55°C to +175°C junction temperature range per JEDEC JESD22-A108.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	–100 V: Maximum reverse-biased drain-source voltage before avalanche breakdown.
R_DS(on)	0.3 Ω @ V_GS = –10 V: On-resistance determines conduction loss in high-side switching applications.
I_D (continuous)	12 A @ T_C = 25°C: Continuous drain current rating under heatsink-cooled conditions.
Q_g	60 nC: Total gate charge required to fully turn on; impacts switching speed and driver sizing.
t_rr	200 ns: Body diode reverse recovery time; critical for hard-switched topologies with freewheeling paths.
P_D	100 W @ T_C = 25°C: Maximum power dissipation achievable with adequate heatsinking.

Pinout & Package

IRFI9530N is housed in a TO-220AB package with electrically isolated tab. The case is connected to source potential, enabling direct heatsink mounting without insulation.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal	Mounted to heatsink; must be electrically isolated from chassis unless referenced to source.
Gate	Control input	Receives negative voltage relative to source to turn on; threshold V_GS(th) = –2.0 to –4.0 V.
Source	Reference node for gate drive and current return	Connected to system ground or high-side rail reference; defines V_GS polarity.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees ruggedness in inductive switching events without external snubbers.
Fast body diode	200 ns t_rr enables use in non-synchronous buck or flyback topologies without added Schottky.
Isolated mounting tab	Allows direct mechanical attachment to grounded heatsinks without thermal interface isolation.
JEDEC qualified	Meets JESD22-A108 reliability standards for temperature cycling and humidity exposure.

Applications

Industrial Motor Control

DC-DC Converter High-Side Switch

Use Scenario: Bidirectional brushed DC motor drive using half-bridge configuration with P-channel high-side and N-channel low-side switches.

IC Role / Device Role / Timing Role: High-side P-channel MOSFET providing controlled current path during forward rotation phase.

Use Value: Eliminates need for high-side gate driver IC due to negative V_GS compatibility with common-ground logic controllers.

Use Scenario: Non-isolated buck converter supplying 24 V output from 48 V bus in factory automation PLC modules.

IC Role / Device Role / Timing Role: Synchronous rectifier replacement for high-side switch in discontinuous conduction mode (DCM).

Use Value: Enables simple gate drive with optocoupler-isolated PWM signal referenced to source, reducing component count vs. bootstrap solutions.

Power Supply OR-ing

Overvoltage Protection Circuit

Use Scenario: Redundant 12 V power inputs in telecom shelf systems where two supplies feed a common bus.

IC Role / Device Role / Timing Role: Reverse-polarity blocking element preventing backfeed between sources during fault or hot-swap events.

Use Value: Low R_DS(on) minimizes insertion loss (< 360 mW at 12 A), preserving efficiency while supporting automatic failover.

Use Scenario: Crowbar-style overvoltage protection for sensitive analog front-end circuitry in test equipment.

IC Role / Device Role / Timing Role: Fast-acting shunt switch triggered by comparator when input exceeds 15 V threshold.

Use Value: Avalanche-rated SOA allows single-pulse clamping of >100 V transients without destruction, extending system uptime.

Equivalent & Alternatives

The following parts are listed as comparable options for similar P-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP9NK90ZFP	900 V V_DS, 9 A I_D, R_DS(on) = 1.2 Ω - higher voltage rating but lower current and higher on-resistance.	Suitable for universal-input offline SMPS where 900 V rating is mandatory; not optimal for 100 V bus systems.	Select only if primary requirement is extended voltage margin over conduction efficiency.
IXTP12P10P	100 V V_DS, 12 A I_D, R_DS(on) = 0.28 Ω, Q_g = 52 nC - slightly lower R_DS(on) and gate charge.	Offers marginally improved switching and conduction loss in high-frequency (>100 kHz) DC-DC designs.	Prefer for new designs targeting < 150 kHz operation with minimal gate drive power.

Compared with IRFI9530N, STP9NK90ZFP trades conduction efficiency for ultra-high voltage robustness, while IXTP12P10P delivers modest improvements in both R_DS(on) and Q_g within identical voltage/current class-making it a drop-in upgrade for thermally constrained layouts.

Availability

IRFI9530N is available at Aetrix Electronics and suitable for industrial motor control, DC-DC converter high-side switching, power supply OR-ing, and overvoltage protection circuits requiring stable component supply and long-term manufacturability.

Supply support for IRFI9530N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power semiconductors, microcontrollers, and sensor solutions for automotive, industrial, and renewable energy markets.

The IRFI9530N belongs to Infineon's legacy HEXFET® Generation 3 P-channel power MOSFET product line, designed specifically for high-reliability, medium-voltage industrial power switching where simplicity of gate drive and avalanche ruggedness are prioritized over ultra-low Q_g.

FAQ

What is the maximum junction temperature for IRFI9530N?

The absolute maximum junction temperature is +175°C per the official Infineon datasheet. Operation above this limit risks permanent parametric shift or catastrophic failure. Derating curves show that continuous I_D drops to 7.2 A at T_C = 100°C, requiring thermal design that maintains case temperature below 85°C for full-rated current.

Can IRFI9530N be used in linear (analog) mode?

Yes, but with strict SOA compliance. The device supports linear operation up to 100 V × 12 A = 1200 W only for < 10 ms pulses. For sustained analog use, power must be limited to ≤ 10 W with active cooling, as its Safe Operating Area restricts simultaneous V_DS and I_D beyond 10 V/10 A in DC mode.

Does IRFI9530N require a gate resistor?

Yes-a series gate resistor (typically 10–47 Ω) is required to dampen ringing caused by gate loop inductance and prevent spurious turn-on from dv/dt coupling. Without it, parasitic oscillation can exceed V_GS(th) during fast drain transitions, leading to shoot-through in bridge configurations.

Is the TO-220AB tab electrically isolated from all pins?

Yes-the TO-220AB package provides full electrical isolation between the drain-connected metal tab and the Gate and Source leads. This allows direct mounting to a grounded heatsink without shorting the drain to system ground, unlike standard TO-220 variants where the tab is internally connected to drain and not isolated.

IRFI9530N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: P-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 7.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 300mOhm @ 4.6A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 38 nC @ 10 V

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: -

Operating Temperature:: -

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFI9530N FAQ

1.How can I place an order for IRFI9530N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFI9530N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFI9530N reliable?

The price and inventory of IRFI9530N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFI9530N is usually 5 days.

3.What payment methods are accepted for IRFI9530N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFI9530N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFI9530N?

IRFI9530N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFI9530N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFI9530N?

For technical support, including IRFI9530N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFI9530N requirements.

6.How does Aetrix verify that IRFI9530N is sourced from the original manufacturer or authorized distributors?

All IRFI9530N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFI9530N meets industry standards.

7.What is the process for return or replacement of IRFI9530N?

All IRFI9530N units undergo pre-shipment inspection (PSI). If there is an issue with IRFI9530N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFI9530N part is unused and in its original packaging.

Return procedure for IRFI9530N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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