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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFIB41N15DPBF

Name: IRFIB41N15DPBF
Brand: Infineon Technologies
SKU: IRFIB41N15DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIB41N15DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFIB41N15DPBF.pdf

Description:: MOSFET N-CH 150V 41A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFIB41N15DPBF from Infineon Technologies is a 150 V, 41 A, 45 mΩ N-channel enhancement-mode HEXFET® Power MOSFET in TO-220 Full-Pak package, optimized for high-frequency DC-DC converters and motor control stages where low R_DS(on), fast switching, and robust avalanche capability are critical. It delivers 29 A continuous drain current at T_C = 100°C and supports pulsed currents up to 164 A.

For engineers reviewing the IRFIB41N15DPBF datasheet, IRFIB41N15DPBF pinout, IRFIB41N15DPBF application, or IRFIB41N15DPBF equivalent, key selection criteria include its 72 nC total gate charge, 250 pF effective output capacitance (C_oss-eff), 170 ns diode reverse recovery time, ±30 V gate voltage rating, and 3.14 °C/W junction-to-case thermal resistance in TO-220 Full-Pak.

Technical Context

This device operates as a high-voltage, high-current unidirectional power switch with integrated body diode. Its 150 V V_(BR)DSS and 0.045 Ω R_DS(on) at V_GS = 10 V enable efficient operation in 48 V–100 V bus systems. The 1.32 W/°C linear derating factor and 3.14 °C/W R_θJC define thermal limits under sustained conduction.

Dynamic performance is characterized by 16 ns turn-on delay, 63 ns rise time, and 25 ns turn-off delay at V_DD = 75 V and R_G = 2.5 Ω. Avalanche energy rating of 470 mJ (single-pulse) and 20 mJ (repetitive) confirms ruggedness in inductive switching applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before avalanche onset; sets upper limit for DC bus voltage in buck, flyback, and half-bridge topologies.
R_DS(on) max	0.045 Ω @ V_GS = 10 V, I_D = 25 A - Directly determines conduction loss (P_cond = I² × R); enables <1.5 W loss at 25 A DC.
I_D @ T_C = 100°C	29 A - Real-world continuous current capability with heatsink; defines safe operating area at elevated ambient temperatures.
Q_g typ	72 nC - Total gate charge required for full enhancement; governs driver strength requirement and switching loss in hard-switched converters.
C_oss-eff	250 pF - Effective output capacitance during V_DS transition from 0 to 120 V; used to calculate turn-off energy loss E_off = ½ × C_oss-eff × V².
t_rr max	260 ns - Maximum reverse recovery time of intrinsic body diode; impacts shoot-through risk and EMI in synchronous rectification and LLC resonant circuits.
E_AS	470 mJ - Single-pulse avalanche energy rating; allows safe operation during unclamped inductive switching events without external snubbers.

Pinout & Package

IRFIB41N15DPBF uses the TO-220 Full-Pak package: insulated plastic case with electrically isolated tab, 3-pin through-hole mounting, and 1.1 N·m maximum mounting torque. Thermal interface requires greased flat surface between case and heatsink (R_θCS = 0.50 °C/W).

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control input	Receives 10 V logic-level signal to fully enhance channel; threshold voltage range 3.0–5.5 V ensures compatibility with standard 5 V/10 V drivers.
Drain (D)	High-side power terminal	Connected to positive DC bus or transformer primary; withstands 150 V and conducts up to 164 A pulsed current.
Source (S)	Power return / reference node	Serves as common return path for load current and gate drive reference; body diode anode is internally tied to source.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	35/72 nC = 49% - Reduces Miller effect, enabling stable high-speed switching with moderate gate resistance (R_G = 2.5 Ω).
Fully characterized C_oss-eff	250 pF over 0–120 V - Enables accurate calculation of turn-off losses and soft-switching design margin in ZVS/ZCS topologies.
Lead-free construction	RoHS-compliant, Pb-free plating and molding compound - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1) and reflow profile requirements.
Robust body diode	t_rr = 170–260 ns, Q_rr = 1.3–1.9 µC - Supports synchronous rectification in DC-DC converters without external Schottky replacement in many 48 V applications.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: Half-bridge leg in 3 kW BLDC inverter for HVAC compressors operating at 20 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side power switch controlling phase voltage; body diode handles freewheeling current during dead-time.

Use Value: 0.045 Ω R_DS(on) limits conduction loss to ≤2.8 W at 25 A RMS, while 260 ns t_rr prevents excessive diode recovery loss at 20 kHz.

Use Scenario: Primary-side switch in 80+ Titanium 3.3 kW telecom rectifier using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Main power switch clamping 100 V DC bus; subjected to repetitive unclamped inductive switching during fault conditions.

Use Value: 470 mJ single-pulse avalanche rating absorbs energy from leakage inductance spikes without failure, eliminating need for external clamping circuitry.

EV On-Board Charger (OBC) PFC Stage

Renewable Energy Inverter H-Bridge

Use Scenario: Boost switch in 6.6 kW interleaved PFC stage operating at 100 kHz with 400 V DC link.

IC Role / Device Role / Timing Role: Fast-switching power transistor requiring low C_oss-eff and minimal Q_g to reduce switching loss at high frequency.

Use Value: 250 pF C_oss-eff and 72 nC Q_g yield <120 µJ turn-off loss per cycle at 100 kHz, supporting >98.5% PFC efficiency.

Use Scenario: Low-side switch in 5 kW solar string inverter H-bridge handling 600 V DC input and grid-synchronized 50/60 Hz output.

IC Role / Device Role / Timing Role: Bidirectional current-handling switch; body diode conducts reverse current during modulation intervals.

Use Value: 164 A pulsed current rating and 29 A continuous current at 100°C allow 10× overload tolerance during anti-islanding test pulses without thermal runaway.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP40NF15	R_DS(on) = 0.042 Ω (typ), Q_g = 85 nC, TO-220AB (non-insulated tab)	Lacks TO-220 Full-Pak insulation; requires isolated mounting hardware for floating-source configurations.	Preferred when lower R_DS(on) is prioritized over thermal isolation and board space is constrained.
IXTH40N15L2	R_DS(on) = 0.040 Ω (typ), Q_g = 68 nC, TO-247AC package, higher I_D = 40 A @ 100°C	TO-247AC offers superior thermal dissipation (R_θJC = 0.45 °C/W) but larger footprint and higher cost.	Selected when thermal budget is tight and PCB real estate permits larger package; not drop-in compatible due to pin pitch and outline.

Compared with STP40NF15 and IXTH40N15L2, IRFIB41N15DPBF uniquely balances insulation, thermal resistance (3.14 °C/W), and gate charge (72 nC) for compact, self-isolated high-frequency switchers-making it optimal for space-constrained industrial SMPS where mounting simplicity and reliability outweigh marginal R_DS(on) gains.

Availability

IRFIB41N15DPBF is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, EV on-board chargers, and renewable energy inverters requiring stable component supply and long-term production continuity.

Supply support for IRFIB41N15DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems demanding ruggedness, low loss, and precise dynamic characterization.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFIB41N15DPBF supports 29 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This value assumes proper heatsinking and adherence to the 1.32 W/°C linear derating curve beyond 25°C case temperature.

Is the TO-220 Full-Pak tab electrically isolated from the drain?

Yes-the TO-220 Full-Pak package features an electrically insulated tab that is not internally connected to the drain. This allows direct mounting to a common heatsink without requiring insulating washers or pads, simplifying thermal design in multi-device layouts.

Can this MOSFET be driven directly from a 5 V microcontroller GPIO?

No-its gate threshold voltage ranges from 3.0 V to 5.5 V, and full enhancement (to achieve 0.045 Ω R_DS(on)) requires V_GS ≥ 10 V. A dedicated gate driver IC or level-shifting circuit is required to ensure reliable switching and minimize conduction loss.

What is the significance of the 250 pF effective output capacitance (C_oss-eff) value?

C_oss-eff = 250 pF represents the fixed capacitance that replicates the actual energy stored in C_oss during V_DS ramp from 0 to 120 V. It is used to compute turn-off switching loss (E_off = ½ × C_oss-eff × V²), critical for optimizing efficiency in hard-switched converters above 50 kHz.

IRFIB41N15DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 41A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 25A, 10V

Vgs(th) (Max) @ Id:: 5.5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2520 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 48W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFIB41N15DPBF FAQ

1.How can I place an order for IRFIB41N15DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIB41N15DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIB41N15DPBF reliable?

The price and inventory of IRFIB41N15DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIB41N15DPBF is usually 5 days.

3.What payment methods are accepted for IRFIB41N15DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIB41N15DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIB41N15DPBF?

IRFIB41N15DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIB41N15DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIB41N15DPBF?

For technical support, including IRFIB41N15DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIB41N15DPBF requirements.

6.How does Aetrix verify that IRFIB41N15DPBF is sourced from the original manufacturer or authorized distributors?

All IRFIB41N15DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIB41N15DPBF meets industry standards.

7.What is the process for return or replacement of IRFIB41N15DPBF?

All IRFIB41N15DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIB41N15DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIB41N15DPBF part is unused and in its original packaging.

Return procedure for IRFIB41N15DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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