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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFIZ24EPBF

Name: IRFIZ24EPBF
Brand: Infineon Technologies
SKU: IRFIZ24EPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ24EPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFIZ24EPBF.pdf

Description:: MOSFET N-CH 60V 14A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:2,427

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Product details

Overview

IRFIZ24EPBF from Infineon Technologies is a 55 V, 17 A N-channel enhancement-mode MOSFET in TO-220 FullPAK package, with R_DS(on) = 0.07 Ω at V_GS = 10 V and 25 °C, 100% avalanche-rated, designed for DC-DC converters, motor drives, and power switching in industrial and automotive control modules.

For engineers reviewing the IRFIZ24EPBF datasheet, IRFIZ24EPBF pinout, IRFIZ24EPBF application, or IRFIZ24EPBF equivalent, key selection criteria include its 55 V V_BR(DSS), 17 A continuous drain current, low gate charge (Q_G = 25 nC), fast switching capability (t_f = 20 ns), and TO-220 FullPAK thermal performance under high-duty-cycle operation.

Technical Context

This MOSFET operates as a unidirectional power switch in high-side or low-side configurations, featuring a planar silicon process optimized for ruggedness and repetitive avalanche energy handling (E_AS = 100 mJ). Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 3.3 V and 5 V logic-level drivers.

The device exhibits low output capacitance (C_oss = 380 pF at V_DS = 25 V) and moderate input capacitance (C_iss = 1200 pF), supporting efficient hard-switching up to 100 kHz in buck and half-bridge topologies with minimal switching loss.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BR(DSS)	55 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for bus voltage in 48 V systems.
I_D (continuous)	17 A @ T_C = 25 °C - Sustained current capability with heatsink; derates to ~9 A at T_C = 100 °C.
R_DS(on)	0.07 Ω @ V_GS = 10 V - On-resistance directly determines conduction loss (P = I²R) in high-current paths.
Q_G	25 nC - Total gate charge defines driver strength requirement and switching transition time.
E_AS	100 mJ - Single-pulse avalanche energy rating enables robustness against inductive load turn-off transients.
t_f	20 ns - Fall time at I_D = 10 A, V_DD = 44 V - Critical for minimizing switching losses in high-frequency SMPS.

Pinout & Package

TO-220 FullPAK package: insulated backside, improved thermal resistance (R_thJC = 1.0 °C/W), lead-free, RoHS-compliant, with drain-connected tab for direct heatsink mounting.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / heat sink interface	Electrically connected to metal tab; must be isolated from chassis unless system ground reference permits.
Source	Return path for drain current / reference node for gate drive	Serves as common return for load current and gate drive loop; critical for minimizing noise coupling in high-di/dt circuits.
Gate	Control terminal for channel conduction	High-impedance input requiring controlled slew rate; sensitive to ESD and ringing-requires gate resistor and local decoupling.

Key Features

Feature	Design Value
100% Avalanche Tested	Guarantees reliable operation under inductive switching stress without external snubbers.
Low Gate Charge (Q_G)	Reduces driver power consumption and enables use of smaller, lower-cost gate drivers.
Enhanced Body Diode Recovery	Minimizes reverse recovery charge (Q_rr) and associated shoot-through risk in synchronous rectification.
TO-220 FullPAK Insulated Tab	Eliminates need for insulating washers while maintaining mechanical robustness and thermal performance.

Applications

DC-DC Buck Converter

Brushed DC Motor Drive

Use Scenario: Step-down regulation from 48 V battery to 12 V for vehicle infotainment power rail.

IC Role / Device Role: High-side synchronous switch in fixed-frequency 200 kHz buck topology.

Use Value: Low R_DS(on) and fast t_f reduce conduction and switching losses, improving efficiency by ≥1.8% over legacy 0.12 Ω parts.

Use Scenario: H-bridge actuator control for HVAC damper positioning in commercial HVAC units.

IC Role / Device Role: Low-side switch controlling bidirectional current flow through 24 V brushed motor.

Use Value: 100 mJ avalanche rating withstands flyback energy during rapid direction reversal without clamping diodes.

Industrial PLC Output Module

LED Constant-Current Driver

Use Scenario: Solid-state relay replacement in 24 V digital output card driving solenoid valves.

IC Role / Device Role: Load switch with integrated protection, driven by microcontroller GPIO.

Use Value: TO-220 FullPAK insulation allows direct PCB mounting without isolation hardware, reducing BOM count and footprint.

Use Scenario: Dimmable streetlight driver delivering 1.5 A constant current to 36 V LED string.

IC Role / Device Role: PWM-controlled high-side switch modulating current through sense resistor.

Use Value: Tight V_GS(th) distribution (2.0–4.0 V) ensures consistent turn-on across temperature and unit-to-unit variation.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ24N	Same die, but TO-220 non-insulated package; R_DS(on) = 0.07 Ω, Q_G = 25 nC, no FullPAK insulation.	Requires insulating pad when mounted to grounded heatsink; higher assembly cost in isolated designs.	Select IRFZ24N only if mechanical isolation is handled externally and cost sensitivity outweighs assembly simplification.
STP16NF55	55 V, 16 A, R_DS(on) = 0.085 Ω, Q_G = 28 nC, TO-220 package with standard tab.	Higher conduction loss and gate drive demand; not avalanche-rated per datasheet.	Prefer only where avalanche robustness is not required and thermal margin exceeds 15 °C.

Compared with IRFZ24N and STP16NF55, IRFIZ24EPBF uniquely combines full electrical isolation, guaranteed avalanche capability, and identical switching performance-making it optimal for safety-critical or space-constrained industrial power stages where reliability and assembly simplicity are prioritized.

Availability

IRFIZ24EPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, PLC output modules, and LED drivers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFIZ24EPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The StrongIRFET™ product line, which includes IRFIZ24EPBF, is engineered for high-reliability power switching in harsh environments-emphasizing ruggedness, thermal stability, and repeatable avalanche performance.

FAQ

What is the maximum junction temperature for continuous operation?

The absolute maximum junction temperature (T_J) is 175 °C. Continuous operation at this temperature requires strict thermal design: case temperature must be held ≤100 °C with appropriate heatsinking, given R_thJC = 1.0 °C/W and typical R_thCA > 10 °C/W in natural convection.

Is IRFIZ24EPBF compatible with 3.3 V microcontroller GPIOs?

Yes-its V_GS(th) range (2.0–4.0 V) ensures turn-on with 3.3 V logic, but R_DS(on) will be higher (~0.12 Ω) than at 10 V. For full performance, a dedicated gate driver or level shifter is recommended to ensure V_GS ≥ 8 V during conduction.

Does the TO-220 FullPAK package require thermal compound?

Yes-despite the insulated tab, thermal interface material (TIM) is mandatory between the metal tab and heatsink to minimize thermal resistance. Use silicone-based or phase-change TIM rated for >150 °C; avoid electrically conductive pastes that could compromise isolation.

How does its body diode performance compare to Schottky alternatives?

The intrinsic body diode has V_SD ≈ 1.2 V at 17 A and t_rr ≈ 60 ns-higher forward drop and slower recovery than Schottky diodes. It is not intended for freewheeling; external Schottky or synchronous rectification is required for high-efficiency topologies.

IRFIZ24EPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 71mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 29W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFIZ24EPBF FAQ

1.How can I place an order for IRFIZ24EPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ24EPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ24EPBF reliable?

The price and inventory of IRFIZ24EPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ24EPBF is usually 5 days.

3.What payment methods are accepted for IRFIZ24EPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ24EPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ24EPBF?

IRFIZ24EPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ24EPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ24EPBF?

For technical support, including IRFIZ24EPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ24EPBF requirements.

6.How does Aetrix verify that IRFIZ24EPBF is sourced from the original manufacturer or authorized distributors?

All IRFIZ24EPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ24EPBF meets industry standards.

7.What is the process for return or replacement of IRFIZ24EPBF?

All IRFIZ24EPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ24EPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ24EPBF part is unused and in its original packaging.

Return procedure for IRFIZ24EPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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