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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFIZ24NPBF

Name: IRFIZ24NPBF
Brand: Infineon Technologies
SKU: IRFIZ24NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ24NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFIZ24NPBF.pdf

Description:: MOSFET N-CH 55V 14A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFIZ24NPBF from Infineon (formerly International Rectifier) is a 55V, 14A N-channel enhancement-mode power MOSFET in TO-220 FullPAK package, featuring R_DS(on) = 0.07 Ω at V_GS = 10 V, 100% avalanche-rated operation, and 2.5 kV_RMS high-voltage isolation between drain tab and leads-designed for DC-DC converters, motor drives, and industrial power switches where thermal reliability and creepage safety are critical.

For engineers reviewing the IRFIZ24NPBF datasheet, IRFIZ24NPBF pinout, IRFIZ24NPBF application, or IRFIZ24NPBF equivalent, key selection criteria include its isolated TO-220 FullPAK mechanical design, 71 mJ single-pulse avalanche energy rating, gate charge profile (Q_g = 20 nC), body diode recovery performance (t_rr = 56–83 ns), and thermal resistance (R_θJC = 5.2 °C/W).

Technical Context

This HEXFET device uses fifth-generation silicon processing to achieve low on-resistance per die area while maintaining fast switching (t_r = 34 ns, t_f = 27 ns) and robust unclamped inductive switching capability. Its isolated TO-220 FullPAK construction integrates high-voltage insulation (2.5 kV_RMS) directly into the package mold compound, eliminating external insulators in commercial-industrial heatsink mounting.

The MOSFET's body diode exhibits V_SD = 1.3 V at I_S = 7.8 A and controlled reverse recovery (Q_rr = 120–180 µC, di/dt = 100 A/µs), enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Gate threshold voltage (2.0–4.0 V) and transconductance (g_fs = 4.5 S) support standard 10 V gate drive with margin for noise immunity.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche onset; enables use in 48 V nominal bus systems with 20% overvoltage margin.
R_DS(on)	0.07 Ω @ V_GS = 10 V, I_D = 7.8 A - Low conduction loss supports >95% efficiency in 10–15 A continuous switch applications.
I_D (T_C = 25°C)	14 A - Continuous drain current rating at case temperature 25°C; derates linearly by 0.19 W/°C above 25°C.
E_AS	71 mJ - Single-pulse avalanche energy; ensures ruggedness during inductive load turn-off without external snubbers.
Q_g	20 nC - Total gate charge; determines gate driver power requirement and switching loss trade-off in PWM operation.
t_rr	56–83 ns - Body diode reverse recovery time; impacts commutation loss and EMI in bridge configurations.
R_θJC	5.2 °C/W - Junction-to-case thermal resistance; enables direct heatsink mounting with predictable thermal rise under full load.

Pinout & Package

IRFIZ24NPBF is housed in an isolated TO-220 FullPAK package with integral high-voltage insulation (2.5 kV_RMS) and 4.8 mm creepage distance. The drain tab is electrically isolated from leads, allowing direct heatsink mounting without mica washers or insulating hardware.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (Left)	Source (S)	Main current return path; connected to PCB ground plane or low-side reference; lowest impedance source terminal.
Lead 2 (Center)	Gate (G)	Control input; requires <±20 V absolute rating; 20 nC total charge demands robust gate driver with ≥1 A peak sourcing/sinking.
Lead 3 (Right)	Drain (D)	High-side power node; internally bonded to isolated metal tab; carries full load current and withstands 55 V blocking.

Key Features

Feature	Design Value
Fully isolated TO-220 FullPAK	2.5 kV_RMS isolation and 4.8 mm creepage eliminate need for insulating hardware in 230 VAC-connected industrial controls.
100% avalanche rated	Guaranteed 71 mJ single-pulse avalanche energy enables reliable operation under unclamped inductive switching without derating.
Low Q_g/Q_gd ratio	Q_gd = 7.6 nC of 20 nC total gate charge reduces Miller effect, improving dv/dt immunity and enabling faster turn-off.
Optimized body diode	t_rr = 56–83 ns and Q_rr = 120–180 µC support efficient freewheeling in half-bridge and synchronous buck topologies.

Applications

Motor Drive Inverter

Industrial DC-DC Converter

Use Scenario: Half-bridge leg in 24–48 V BLDC motor controllers driving fans, pumps, or conveyors.

IC Role / Device Role / Timing Role: High-side and low-side switching element; handles 10–14 A continuous current with 55 V bus headroom.

Use Value: Isolated FullPAK allows direct heatsink mounting on shared chassis ground, reducing BOM count and thermal interface resistance.

Use Scenario: Primary-side switch in non-isolated buck or buck-boost converters for PLC I/O modules and sensor power supplies.

IC Role / Device Role / Timing Role: Main power switch operating at 100–500 kHz with 14 A peak current capability.

Use Value: 0.07 Ω R_DS(on) minimizes conduction loss at 12–15 A loads, supporting >94% efficiency at 48 V input.

UPS Output Stage

LED Driver Power Switch

Use Scenario: Inverter output stage in line-interactive UPS systems delivering clean 230 VAC sine wave to critical loads.

IC Role / Device Role / Timing Role: Final-stage switching device in H-bridge topology; subjected to repetitive unclamped inductive stress during transfer switching.

Use Value: 71 mJ E_AS and 2.9 mJ E_AR ensure long-term reliability without snubber circuits during grid-to-battery transition events.

Use Scenario: Constant-current switch in high-power LED drivers for street lighting and industrial area lighting.

IC Role / Device Role / Timing Role: PWM-controlled current regulator handling 10–12 A average LED string current at up to 55 V forward voltage.

Use Value: Low R_DS(on) and 5.2 °C/W R_θJC enable compact heatsink design while maintaining junction temperature below 125°C at full load.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP16NF55	V_DSS = 55 V, R_DS(on) = 0.08 Ω, Q_g = 22 nC, non-isolated TO-220	Lacks 2.5 kV_RMS isolation; requires external insulator for heatsink mounting.	Select when isolation is handled at board level and lower gate charge is not required.
IRFZ24N	Same die but non-lead-free, non-FullPAK TO-220; R_DS(on) = 0.07 Ω, no isolation, 1.6 mm creepage	Requires mica washer and mounting hardware; higher thermal resistance (R_θJC = 6.2 °C/W).	Select only for legacy designs where lead-free compliance and isolation are not mandated.

Compared with STP16NF55 and IRFZ24N, IRFIZ24NPBF uniquely delivers integrated high-voltage isolation, reduced thermal resistance, and lead-free compliance-making it optimal for new industrial designs requiring simplified assembly, enhanced safety certification, and thermal performance.

Availability

IRFIZ24NPBF is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, UPS output stages, and high-power LED drivers requiring stable component supply across multi-year production cycles.

Supply support for IRFIZ24NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio, a leader in high-reliability power MOSFETs since the 1980s.

The IRFIZ24NPBF belongs to the fifth-generation HEXFET family, engineered specifically for industrial power conversion where isolation, avalanche ruggedness, and thermal efficiency are non-negotiable.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFIZ24NPBF supports 10 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 14 A rating at 25°C, with a linear derating factor of 0.19 W/°C applied to its 29 W power dissipation limit.

Does the TO-220 FullPAK package require insulating hardware when mounted to a heatsink?

No. The TO-220 FullPAK package incorporates molded-in insulation providing 2.5 kV_RMS isolation between the drain tab and leads, and 4.8 mm creepage distance-eliminating the need for mica washers, silicone pads, or other insulating hardware in standard commercial-industrial mounting.

What is the typical gate threshold voltage range, and how does it affect drive requirements?

V_GS(th) is specified from 2.0 V to 4.0 V at I_D = 250 µA. This range confirms logic-compatible operation with 5 V microcontrollers, but full enhancement (R_DS(on) ≤ 0.07 Ω) requires ≥10 V gate drive to ensure low conduction loss and thermal stability under load.

How is avalanche ruggedness verified for this MOSFET?

Avalanche ruggedness is validated per JEDEC JESD24-11: the IRFIZ24NPBF is 100% tested for single-pulse avalanche energy (E_AS = 71 mJ) and repetitive avalanche energy (E_AR = 2.9 mJ) under defined conditions (I_AS = 10 A, L = 1.0 mH, V_DD = 25 V), ensuring reliability in inductive switching applications without external protection.

IRFIZ24NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 14A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 70mOhm @ 7.8A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 20 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 370 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 29W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFIZ24NPBF FAQ

1.How can I place an order for IRFIZ24NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ24NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ24NPBF reliable?

The price and inventory of IRFIZ24NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ24NPBF is usually 5 days.

3.What payment methods are accepted for IRFIZ24NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ24NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ24NPBF?

IRFIZ24NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ24NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ24NPBF?

For technical support, including IRFIZ24NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ24NPBF requirements.

6.How does Aetrix verify that IRFIZ24NPBF is sourced from the original manufacturer or authorized distributors?

All IRFIZ24NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ24NPBF meets industry standards.

7.What is the process for return or replacement of IRFIZ24NPBF?

All IRFIZ24NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ24NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ24NPBF part is unused and in its original packaging.

Return procedure for IRFIZ24NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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