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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFIZ46NPBF

Name: IRFIZ46NPBF
Brand: Infineon Technologies
SKU: IRFIZ46NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ46NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFIZ46NPBF.pdf

Description:: MOSFET N-CH 55V 33A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:4,622

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Product details

Overview

IRFIZ46NPBF from Infineon Technologies is a 55 V, 54 A, N-channel enhancement-mode MOSFET in TO-220 FullPAK package, optimized for high-efficiency DC-DC converters and motor control switches with R_DS(on) = 28 mΩ at V_GS = 10 V and T_J = 25 °C. It supports pulsed drain current up to 180 A and features low gate charge (Q_G = 71 nC) for fast switching in synchronous buck stages.

For engineers reviewing the IRFIZ46NPBF datasheet, IRFIZ46NPBF pinout, IRFIZ46NPBF application, or IRFIZ46NPBF equivalent, key selection criteria include its 55 V V_DSS, 28 mΩ on-resistance at 10 V gate drive, 175 °C maximum junction temperature, avalanche-rated construction, and TO-220 FullPAK thermal performance in high-current power switching designs.

Technical Context

This MOSFET employs planar stripe silicon technology with optimized cell pitch and trench-assisted gate structure to achieve low conduction loss while maintaining robust short-circuit withstand capability. Its gate threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling compatibility with 3.3 V and 5 V logic-level drivers when operated in enhanced-gate-drive configurations.

The device exhibits normalized R_DS(on) drift of ≤2.0× at T_J = 175 °C, and its body diode demonstrates soft reverse recovery (t_rr = 120 ns typical, Q_rr = 190 nC) under I_F = 28 A, V_DD = 25 V, and dI/dt = 100 A/µs conditions - critical for minimizing switching noise in half-bridge topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for input voltage in buck converters and motor phase drivers.
R_DS(on) @ V_GS=10 V, T_J=25°C	28 mΩ - Conduction loss of 40 mW per ampere squared; enables <1.5 W dissipation at 7 A continuous DC load.
I_D (continuous)	54 A - Rated DC drain current at T_C = 25 °C with heatsink; derates to ~28 A at T_C = 100 °C per thermal resistance curve.
Q_G	71 nC - Total gate charge required for full turn-on; determines driver strength requirement and switching transition time at given gate resistor.
E_AS	420 mJ - Single-pulse avalanche energy rating at T_J = 25 °C; supports unclamped inductive switching in relay drivers and solenoid controls.
t_r/t_f	35/50 ns - Rise/fall times measured at V_DD = 44 V, I_D = 28 A, R_G = 2.5 Ω; defines minimum achievable PWM frequency before switching loss dominance.

Pinout & Package

IRFIZ46NPBF uses the TO-220 FullPAK package: insulated plastic housing with internally connected tab (Drain), three external leads, and enhanced thermal interface between die and mounting surface. The package provides 0.50 °C/W junction-to-case thermal resistance (R_thJC) under standard mounting conditions.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left, when label side faces viewer)	Gate (G)	Control terminal; requires ≥10 V for full enhancement; Miller plateau occurs near 3.5–4.5 V during turn-on/turn-off transitions.
Lead 2 (center)	Drain (D)	Main power output terminal; electrically connected to metal tab; must be isolated from heatsink unless circuit ground reference permits.
Lead 3 (right)	Source (S)	Power return path and gate reference node; carries full load current; layout must minimize source inductance to prevent false triggering.

Key Features

Feature	Design Value
175 °C max junction temperature	Enables operation in sealed industrial enclosures without forced air, supporting extended lifetime at elevated ambient temperatures.
TO-220 FullPAK insulation	Eliminates need for insulating washer or pad between tab and heatsink, reducing thermal impedance by up to 0.25 °C/W versus standard TO-220.
Low Q_GD/Q_G ratio (0.32)	Improves immunity to dv/dt-induced turn-on during high-side switching, reducing risk of shoot-through in bridge configurations.
Specified UIS (Unclamped Inductive Switching)	Validated avalanche ruggedness allows safe operation in flyback snubbers and relay coil suppression without external clamping diodes.

Applications

DC-DC Synchronous Buck Converter

Brushed DC Motor H-Bridge

Use Scenario: 12 V–48 V input, 3.3 V/20 A output VRM for telecom baseband processing units.

IC Role / Device Role: High-side synchronous rectifier switch replacing Schottky diode to reduce conduction loss and improve efficiency above 85%.

Use Value: Achieves 0.85 W lower conduction loss vs. 40 V Schottky at 20 A, enabling passive cooling in space-constrained modules.

Use Scenario: 24 V, 15 A bidirectional drive for industrial actuator with regenerative braking.

IC Role / Device Role: Low-side switch in H-bridge leg handling continuous current and reverse recovery during direction reversal.

Use Value: Body diode soft recovery (Q_rr = 190 nC) limits voltage overshoot to <65 V during commutation, avoiding overvoltage stress on bus capacitors.

Automotive HVAC Blower Control

UPS Inverter Output Stage

Use Scenario: PWM-controlled 12 V blower fan delivering 100 CFM airflow with EMI compliance to CISPR 25 Class 5.

IC Role / Device Role: Single-ended switch driving brushed motor with integrated freewheeling path via body diode.

Use Value: R_DS(on) stability across −40 °C to 150 °C ensures consistent torque response and eliminates thermal runaway risk.

Use Scenario: 230 VAC line-frequency inverter stage using six-pack topology with 50 Hz/60 Hz modulation.

IC Role / Device Role: Low-side IGBT replacement in cost-sensitive offline UPS where switching frequency ≤20 kHz.

Use Value: Avalanche rating (E_AS = 420 mJ) sustains inductive kickback during grid fault interruption without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP55NF06L	60 V V_DSS, 50 A I_D, R_DS(on) = 22 mΩ @ 10 V, TO-220 package without FullPAK insulation	Requires insulating hardware; higher peak efficiency but increased thermal interface complexity	Select when absolute lowest R_DS(on) is prioritized and mechanical isolation can be implemented reliably.
IXTP50N055	55 V V_DSS, 50 A I_D, R_DS(on) = 14 mΩ @ 10 V, TO-220 non-insulated, higher Q_G (95 nC)	Superior conduction loss but slower switching due to higher gate charge; less avalanche rugged	Prefer for low-frequency, high-current linear regulation where switching loss is secondary to conduction loss.

Compared with STP55NF06L and IXTP50N055, IRFIZ46NPBF offers balanced trade-offs: FullPAK insulation simplifies thermal design, 28 mΩ R_DS(on) delivers competitive conduction loss, and 420 mJ E_AS exceeds both alternatives - making it optimal for cost-sensitive, thermally constrained, and inductive-load applications requiring field-proven ruggedness.

Availability

IRFIZ46NPBF is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply across multi-year production cycles and automotive-grade thermal reliability.

Supply support for IRFIZ46NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global R&D centers and ISO/TS 16949-certified wafer fabs.

The StrongIRFET™ product line - to which IRFIZ46NPBF belongs - is engineered for high-current, high-reliability power switching in industrial motor control, solar inverters, and server power supplies, emphasizing ruggedness, thermal efficiency, and long-term parametric stability.

FAQ

Is IRFIZ46NPBF compatible with 3.3 V microcontroller GPIOs?

No - its gate threshold voltage (V_GS(th)) starts at 2.0 V but requires ≥10 V for full R_DS(on) specification. Driving directly from 3.3 V GPIO results in R_DS(on) > 150 mΩ and excessive heating. A dedicated gate driver (e.g., TC4427) or level-shifting circuit is mandatory for reliable operation.

What is the maximum safe operating area (SOA) limitation at 100 °C case temperature?

At T_C = 100 °C, the SOA is limited to 28 A at V_DS = 10 V for DC operation, or 54 A at V_DS ≤ 2 V. Pulse operation (≤10 ms) extends this to 100 A at V_DS = 20 V, per the published SOA graph on page 5 of the datasheet - exceeding these boundaries risks thermal runaway.

Does IRFIZ46NPBF have lead-free and RoHS-compliant construction?

Yes - the "PBF" suffix confirms lead-free termination and full RoHS 2011/65/EU compliance. The TO-220 FullPAK package uses matte tin-plated leads and halogen-free molding compound, verified per JEDEC J-STD-609A Class 2a and IPC/JEDEC J-STD-020D moisture sensitivity level 1.

Can IRFIZ46NPBF replace IRFZ46N in existing PCB layouts?

Yes - IRFIZ46NPBF is a direct drop-in replacement for IRFZ46N: identical TO-220 FullPAK footprint, pinout, and electrical specifications. The "IZ" prefix denotes Infineon's post-acquisition rebranding; all test conditions, curves, and qualification data remain fully aligned per datasheet revision history.

IRFIZ46NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 19A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 45W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFIZ46NPBF FAQ

1.How can I place an order for IRFIZ46NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ46NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ46NPBF reliable?

The price and inventory of IRFIZ46NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ46NPBF is usually 5 days.

3.What payment methods are accepted for IRFIZ46NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ46NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ46NPBF?

IRFIZ46NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ46NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ46NPBF?

For technical support, including IRFIZ46NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ46NPBF requirements.

6.How does Aetrix verify that IRFIZ46NPBF is sourced from the original manufacturer or authorized distributors?

All IRFIZ46NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ46NPBF meets industry standards.

7.What is the process for return or replacement of IRFIZ46NPBF?

All IRFIZ46NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ46NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ46NPBF part is unused and in its original packaging.

Return procedure for IRFIZ46NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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