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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFIZ48N

Name: IRFIZ48N
Brand: Infineon Technologies
SKU: IRFIZ48N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ48N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFIZ48N.pdf

Description:: MOSFET N-CH 55V 36A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Inventory:3,570

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Product details

Overview

IRFIZ48N from Infineon Technologies (formerly International Rectifier) is a 55 V, 40 A, 16 mΩ N-channel enhancement-mode power MOSFET in TO-220 Full-Pak package, designed for high-efficiency DC-DC conversion, motor control, and industrial switching applications where low conduction loss and rugged avalanche capability are critical.

For engineers reviewing the IRFIZ48N datasheet, IRFIZ48N pinout, IRFIZ48N application, or IRFIZ48N equivalent, key selection criteria include its 2.8 °C/W junction-to-case thermal resistance, 270 mJ single-pulse avalanche energy rating, 89 nC total gate charge, and isolated TO-220 Full-Pak construction enabling direct heatsink mounting without additional insulation.

Technical Context

This HEXFET® device employs fifth-generation silicon processing to achieve ultra-low R_DS(on) while maintaining fast switching (t_r = 78 ns, t_f = 48 ns) and robust unclamped inductive switching performance. Its integrated body diode supports synchronous rectification with 1.3 V forward voltage at 22 A and 94–140 ns reverse recovery time.

The TO-220 Full-Pak package provides 2.5 kV_RMS isolation between drain tab and leads, 4.8 mm creepage distance, and thermal performance equivalent to a standard TO-220 with 100 µm mica insulator - enabling simplified mechanical mounting via single screw or clip.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum blocking voltage before avalanche; defines upper limit for DC bus or flyback clamp voltage
R_DS(on)	0.016 Ω @ V_GS = 10 V, I_D = 22 A - Enables <1 W conduction loss at 22 A, critical for thermal management in high-current SMPS
I_D (T_C = 25°C)	40 A - Continuous drain current rating under ideal heatsinking; derates to 29 A at 100°C case temperature
E_AS	270 mJ - Single-pulse avalanche energy; allows reliable operation during inductive turn-off transients without external snubbers
Q_g	89 nC - Total gate charge determines driver strength requirement; impacts switching loss and gate drive IC selection
R_θJC	2.8 °C/W - Junction-to-case thermal resistance; enables precise heatsink sizing when tab is directly mounted to heatsink
V_SD	1.3 V @ I_S = 22 A - Body diode forward voltage; affects freewheeling loss and dead-time optimization in half-bridge topologies

Pinout & Package

IRFIZ48N is housed in a TO-220 Full-Pak package with isolated drain tab. The package eliminates need for insulating washers or mica pads in commercial-industrial mounting, offering 2.5 kV_RMS isolation and 4.8 mm creepage between drain and leads.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; threshold 2.0–4.0 V ensures compatibility with 5 V and 3.3 V controllers
D (Drain)	High-side power terminal	Internally connected to isolated metal tab; serves as primary heat path and high-voltage node in buck/boost/flyback topologies
S (Source)	Reference and return path	Provides common reference for gate drive and current sensing; ties to power ground or low-side switch source in bridge configurations

Key Features

Feature	Design Value
Fifth-generation HEXFET® silicon	Delivers 16 mΩ R_DS(on) in TO-220 footprint - reduces conduction loss by ~25% vs. prior-gen equivalents at same current
TO-220 Full-Pak isolation	2.5 kV_RMS dielectric strength and 4.8 mm creepage - eliminates insulating hardware and simplifies UL/IEC compliance in AC-input designs
Full avalanche rating	270 mJ E_AS and 32 A I_AR - guarantees survivability during unclamped inductive switching without derating or external protection
Low gate charge	89 nC Q_g with 39 nC Q_gd - enables efficient 100–500 kHz switching with moderate gate drivers (e.g., IR2110, UCC27531)

Applications

DC-DC Power Supplies

Brushed DC Motor Drives

Use Scenario: Primary-side switch in 12–48 V input, 100–500 W isolated flyback or forward converters.

IC Role / Device Role: High-side power switch handling full load current with minimal conduction loss and controlled dv/dt.

Use Value: 16 mΩ R_DS(on) and 2.8 °C/W R_θJC enable >94% efficiency at 40 A and reduce heatsink volume by 35% vs. 25 mΩ alternatives.

Use Scenario: H-bridge low-side switch in 24–48 V battery-powered industrial actuators and robotic joints.

IC Role / Device Role: Synchronous rectifier and PWM-controlled current path with integrated body diode for freewheeling.

Use Value: 1.3 V V_SD and 94 ns trr minimize freewheeling loss and allow shorter dead-time, increasing torque density and reducing audible noise.

Uninterruptible Power Systems

Industrial PLC Output Modules

Use Scenario: Inverter leg switch in 48 V DC backup systems delivering clean 120/230 VAC output.

IC Role / Device Role: Fast-switching, avalanche-rugged power stage managing bidirectional energy flow during transfer switching.

Use Value: 270 mJ E_AS withstands line surges and load dump events without failure; 5.0 V/ns dv/dt rating prevents spurious turn-on in noisy environments.

Use Scenario: Solid-state relay replacement in DIN-rail mounted I/O modules controlling solenoids, valves, and indicator lamps.

IC Role / Device Role: Load switch with galvanic isolation, overcurrent protection, and diagnostic feedback capability.

Use Value: TO-220 Full-Pak's 2.5 kV_RMS isolation meets IEC 61000-4-5 surge immunity requirements; 49 A I_S supports 3× inrush current of 16 A resistive loads.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
IRFZ48N	Non-isolated TO-220AB; R_DS(on) = 0.015 Ω; no drain-tab isolation; requires mica insulator	Requires additional insulation hardware; unsuitable for safety-critical isolation zones	Select only when cost sensitivity outweighs isolation and thermal assembly complexity
STP55NF06L	60 V, 55 A, 0.014 Ω; logic-level gate (V_GS(th) = 1–2.5 V); non-isolated TO-220	Better gate drive compatibility with 3.3 V microcontrollers; lacks avalanche rating and isolation	Prefer for low-voltage logic-driven systems where avalanche stress is absent and isolation is handled externally

Compared with IRFZ48N and STP55NF06L, IRFIZ48N uniquely combines certified isolation, full avalanche ruggedness, and industry-standard thermal performance - making it the only choice for safety-compliant, high-reliability industrial switching where mechanical simplicity and transient robustness are mandatory.

Availability

IRFIZ48N is available at Aetrix Electronics and suitable for DC-DC power supplies, brushed DC motor drives, uninterruptible power systems, and industrial PLC output modules requiring stable component supply across multi-year production cycles.

Supply support for IRFIZ48N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with core expertise in silicon and wide-bandgap power devices.

The HEXFET® Power MOSFET product line was engineered for high-efficiency, high-reliability switching in industrial power conversion, motor control, and renewable energy systems - emphasizing ruggedness, thermal performance, and system-level simplification.

FAQ

Is IRFIZ48N pin-compatible with IRFZ48N?

No. While both share identical pinout (G-D-S), IRFIZ48N uses a TO-220 Full-Pak package with electrically isolated drain tab, whereas IRFZ48N uses standard TO-220AB with conductive tab. Mounting hardware, insulation requirements, and thermal interface design differ fundamentally.

What is the maximum continuous drain current at 100°C case temperature?

The datasheet specifies 29 A continuous drain current at T_C = 100°C with V_GS = 10 V. This reflects thermal derating due to reduced channel conductivity and increased R_DS(on) at elevated junction temperatures.

Does IRFIZ48N require a gate resistor for safe operation?

A gate resistor is required to control switching speed and suppress ringing. Typical values range from 5.1 Ω to 22 Ω depending on driver capability and EMI constraints. The datasheet uses 5.1 Ω in switching time tests to balance speed and oscillation damping.

Can IRFIZ48N be used in synchronous rectification topologies?

Yes. Its body diode has V_SD = 1.3 V at 22 A and trr = 94–140 ns, supporting synchronous rectification in LLC and phase-shifted full-bridge converters up to ~300 kHz, provided gate timing accounts for diode conduction delay and reverse recovery.

IRFIZ48N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 36A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 16mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 89 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 42W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: PG-TO220-FP

IRFIZ48N FAQ

1.How can I place an order for IRFIZ48N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ48N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ48N reliable?

The price and inventory of IRFIZ48N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ48N is usually 5 days.

3.What payment methods are accepted for IRFIZ48N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ48N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ48N?

IRFIZ48N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ48N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ48N?

For technical support, including IRFIZ48N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ48N requirements.

6.How does Aetrix verify that IRFIZ48N is sourced from the original manufacturer or authorized distributors?

All IRFIZ48N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ48N meets industry standards.

7.What is the process for return or replacement of IRFIZ48N?

All IRFIZ48N units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ48N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ48N part is unused and in its original packaging.

Return procedure for IRFIZ48N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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