Infineon Technologies IRFIZ48NPBF

Overview

IRFIZ48NPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 40 A, N-channel enhancement-mode power MOSFET in TO-220 Full-Pak package, featuring 16 mΩ R_DS(on) at V_GS = 10 V, 270 mJ single-pulse avalanche energy rating, and isolated tab design enabling direct heatsink mounting without insulating hardware - used in DC-DC converters, motor drives, and industrial power supplies.

For engineers reviewing the IRFIZ48NPBF datasheet, IRFIZ48NPBF pinout, IRFIZ48NPBF application, or IRFIZ48NPBF equivalent, key selection criteria include its 2.8 °C/W junction-to-case thermal resistance, 89 nC total gate charge, 5.0 V/ns peak diode recovery dv/dt capability, and full avalanche rating - critical for high-reliability switching in 24–48 V systems.

Technical Context

This HEXFET® device employs fifth-generation silicon processing to achieve low on-resistance per die area while maintaining rugged unclamped inductive switching performance. Its isolated TO-220 Full-Pak package provides 2.5 kV_RMS voltage isolation between drain (tab) and leads, with 4.8 mm creepage distance and thermal resistance of 2.8 °C/W from junction to case.

The MOSFET integrates a fast, low-loss body diode (t_rr = 94–140 ns, Q_rr = 360–540 nC) and supports hard-switching topologies up to 100 kHz. Gate threshold voltage (2.0–4.0 V) and transconductance (22 S) ensure stable drive compatibility with standard 5 V and 10 V logic-level controllers.

Key Specifications

Pinout & Package

IRFIZ48NPBF uses the TO-220 Full-Pak package: an insulated, through-hole power package with electrically isolated metal tab (drain), three leads (gate, drain, source), and 2.5 kV_RMS isolation between tab and leads. Mounting requires only one screw or clip; no mica washer needed.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Compared with IRFZ48N, IRFIZ48NPBF offers mechanical and thermal advantages via isolation, while STP55NF06L trades higher current rating and logic-level drive for increased gate charge - choice depends on mounting constraints, drive architecture, and thermal budget.

Availability

IRFIZ48NPBF is available at Aetrix Electronics and suitable for motor drives, industrial DC-DC converters, and UPS output stages requiring stable component supply and long-term manufacturability.

Supply support for IRFIZ48NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with heritage from International Rectifier's HEXFET® innovation.

This part belongs to the HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in commercial and industrial power conversion - emphasizing ruggedness, thermal performance, and ease of heatsink integration.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFIZ48NPBF supports 29 A continuous drain current at T_C = 100°C, per its Absolute Maximum Ratings table. This derating reflects thermal limits of the TO-220 Full-Pak package and ensures junction temperature remains within the −55°C to +175°C operating range under sustained load.

Does the TO-220 Full-Pak package require electrical isolation hardware when mounted to a heatsink?

No. The TO-220 Full-Pak package features a molded isolating compound that provides 2.5 kV_RMS isolation between the drain-connected metal tab and the leads, eliminating the need for mica washers or silicone pads - enabling direct mechanical attachment with a single screw or clip.

What is the significance of the 5.0 V/ns peak diode recovery dv/dt rating?

This rating specifies the maximum rate of voltage rise across the body diode during reverse recovery before parasitic turn-on occurs. At 5.0 V/ns, the device resists false triggering in high-dv/dt environments like motor drives or PFC circuits, ensuring reliable commutation without requiring external gate resistors or snubbers.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The integrated body diode has t_rr = 94–140 ns and V_SD = 1.3 V at 22 A, making it slower and higher forward-drop than most Schottky diodes. It is suitable for freewheeling and moderate-frequency synchronous rectification but not optimal for >300 kHz designs where ultrafast recovery and <0.5 V drop are critical.