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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFIZ48VPBF

Name: IRFIZ48VPBF
Brand: Infineon Technologies
SKU: IRFIZ48VPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFIZ48VPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-220-3 Full Pack

Datasheet:: IRFIZ48VPBF.pdf

Description:: MOSFET N-CH 60V 39A TO220AB FP

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFIZ48VPBF from Infineon Technologies (formerly International Rectifier) is a 60 V, 39 A, 12 mΩ N-channel enhancement-mode HEXFET® Power MOSFET in TO-220 Fullpak package, optimized for high-efficiency switch-mode power supplies and DC-DC converters. It features fully avalanche-rated operation, isolated tab design rated at 2.5 kVRMS, and fast switching with 7.6 ns turn-on delay and 166 ns fall time.

For engineers reviewing the IRFIZ48VPBF datasheet, IRFIZ48VPBF pinout, IRFIZ48VPBF application, or IRFIZ48VPBF equivalent, key selection criteria include its 12 mΩ R_DS(on) at V_GS = 10 V, 290 A pulsed drain current capability, 2.5 kVRMS isolation rating, and suitability for industrial-grade SMPS designs requiring robust thermal performance and body-diode recovery (t_rr = 70–100 ns).

Technical Context

This MOSFET employs advanced planar HEXFET processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching (UIS) capability. Its isolated TO-220 Fullpak package integrates high-voltage insulation equivalent to a 100 µm mica barrier, eliminating external insulators in commercial-industrial heatsink mounting.

The device is characterized for operation across –55°C to +175°C junction temperature, with gate threshold voltage (2.0–4.0 V), transconductance (35 S), and total gate charge (110 nC) specified at 25°C and 175°C. Body diode forward voltage is 2.0 V at 72 A and 25°C, supporting synchronous rectification and freewheeling roles in buck and flyback topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage before avalanche breakdown; sets upper limit for input/output rail voltage in SMPS designs
R_DS(on)	12 mΩ @ V_GS = 10 V, I_D = 43 A - Directly determines conduction loss (P_cond ≈ I² × R_DS(on)) in high-current paths
I_D (T_C = 25°C)	39 A - Continuous safe operating current with case heatsink at 25°C; derates linearly by 0.29 W/°C above 25°C
Q_g	110 nC - Total gate charge required for full turn-on; impacts driver sizing and switching loss in hard-switched converters
t_rr	70–100 ns - Reverse recovery time of integrated body diode; critical for minimizing shoot-through and EMI in synchronous topologies
E_AS	780 mJ - Single-pulse avalanche energy rating; enables reliable operation under transient overvoltage or inductive load switching
R_θJC	3.5 °C/W - Junction-to-case thermal resistance; defines minimum heatsink requirement for thermal management

Pinout & Package

IRFIZ48VPBF uses the TO-220 Fullpak package: isolated metal tab (Drain-connected), 3-pin through-hole outline with integral insulation enabling direct heatsink mounting without additional hardware. Tab isolation rating is 2.5 kVRMS.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Left)	Gate (G)	Control terminal; requires ≤ ±20 V gate drive; 100 nA leakage at ±20 V ensures low standby power
Pin 2 (Center)	Drain (D)	Main power output terminal; electrically connected to isolated metal tab; carries full load current and heat
Pin 3 (Right)	Source (S)	Power return/reference node; forms common reference for gate drive and current sensing; internal source inductance LS = 7.5 nH

Key Features

Feature	Design Value
Fully avalanche-rated	72 A I_AS, 780 mJ E_AS - Enables reliable operation during inductive switching transients without external snubbers
Isolated TO-220 Fullpak	2.5 kVRMS tab isolation - Eliminates need for mica washers or insulating sleeves in industrial heatsink assemblies
Optimized for SMPS	12 mΩ R_DS(on), 110 nC Q_g, 166 ns t_f - Balances conduction and switching losses in 100–500 kHz DC-DC converters
Fast body diode	t_rr = 70–100 ns, Q_rr = 155–233 nC - Reduces reverse recovery losses and improves efficiency in non-synchronous flyback and buck converters
High-temperature operation	T_J = –55°C to +175°C - Supports extended life and reliability in enclosed industrial environments without derating

Applications

Server VRM

Industrial Motor Drive

Use Scenario: High-current point-of-load regulation in 1U server power supplies delivering up to 120 A per phase.

IC Role / Device Role / Timing Role: Synchronous rectifier in multiphase buck converter; switches at 300–500 kHz with precise gate timing control.

Use Value: 12 mΩ R_DS(on) minimizes conduction loss at 40+ A DC, while 110 nC Q_g enables efficient drive with standard gate drivers.

Use Scenario: Half-bridge output stage in 0.5–2 kW variable-frequency drives for HVAC blowers and pumps.

IC Role / Device Role / Timing Role: Low-side switching element handling continuous 27 A (T_C = 100°C) with repetitive inductive loads.

Use Value: Fully avalanche-rated operation withstands motor back-EMF spikes; 2.5 kVRMS isolation simplifies heatsink grounding in grounded-cabinet systems.

Telecom DC-DC Converter

LED Driver Power Stage

Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf power.

IC Role / Device Role / Timing Role: Main power switch operating at 200 kHz with 50% duty cycle; subjected to 60 V bus and 290 A pulsed currents.

Use Value: 290 A I_DM supports peak current demands during startup and overload; 3.5 °C/W R_θJC enables compact heatsinking.

Use Scenario: Constant-current switching regulator for high-brightness LED arrays in street lighting fixtures.

IC Role / Device Role / Timing Role: PWM-controlled high-side switch regulating 3–5 A LED strings at 100–200 kHz.

Use Value: Fast 166 ns t_f and low Q_gd/Q_gs ratio reduce switching loss and improve dimming linearity at high frequencies.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP60NF06	R_DS(on) = 14 mΩ, Q_g = 95 nC, TO-220 non-isolated	Lacks 2.5 kVRMS isolation; requires external insulator for heatsink mounting	Select when cost sensitivity outweighs isolation requirement and board space allows insulator integration
IXTP30N10D2	R_DS(on) = 30 mΩ, V_DSS = 100 V, D2PAK package	Higher voltage rating but double R_DS(on); larger footprint and higher thermal resistance (R_θJC = 4.5 °C/W)	Prefer only if system requires >60 V blocking or D2PAK mechanical compatibility is mandatory

Compared with STP60NF06 and IXTP30N10D2, IRFIZ48VPBF delivers lower conduction loss and integrated isolation in the same TO-220 footprint-critical for space-constrained industrial SMPS where thermal and safety margins are prioritized over minimal BOM cost.

Availability

IRFIZ48VPBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom DC-DC converters, and LED driver power stages requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFIZ48VPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, automotive, and industrial control solutions, with deep heritage in power MOSFET innovation via its acquisition of International Rectifier.

The HEXFET® Power MOSFET product line was engineered specifically for high-efficiency, high-reliability switch-mode power conversion-targeting industrial, telecom, and computing applications demanding ruggedness, low R_DS(on), and proven avalanche performance.

FAQ

What is the maximum gate-to-source voltage rating for IRFIZ48VPBF?

The absolute maximum V_GS rating is ±20 V. Operation beyond this range risks permanent gate oxide damage. Gate drive circuits must clamp voltage within this window using Zener diodes or active clamping, especially during fast dv/dt events or negative ringing caused by stray inductance.

Can IRFIZ48VPBF be used in avalanche mode continuously?

No-avalanche operation is rated for single-pulse conditions only (E_AS = 780 mJ). Repetitive avalanche is not characterized or guaranteed. Designers must ensure circuit conditions (L × di/dt, V_DD, pulse width) stay within the UIS Safe Operating Area shown in Figure 11 of the datasheet.

Does the TO-220 Fullpak tab require electrical isolation from the heatsink?

No-the tab is internally insulated and rated for 2.5 kVRMS isolation. It may be mounted directly to an earthed heatsink without mica, silicone pads, or insulating hardware, provided mechanical torque does not exceed 1.1 N·m (10 lbf·in) to avoid compromising the molding compound seal.

How does the body diode performance compare to discrete Schottky diodes in high-frequency applications?

The integrated body diode has t_rr = 70–100 ns and V_SD = 2.0 V at 72 A-higher forward drop and slower recovery than typical Schottky diodes. For >200 kHz operation, external Schottky or SiC diodes are recommended to reduce recovery loss and EMI; the body diode is best suited for lower-frequency freewheeling or fault protection.

IRFIZ48VPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-220-3 Full Pack

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 39A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 110 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1985 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 43W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-220AB Full-Pak

IRFIZ48VPBF FAQ

1.How can I place an order for IRFIZ48VPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFIZ48VPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFIZ48VPBF reliable?

The price and inventory of IRFIZ48VPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFIZ48VPBF is usually 5 days.

3.What payment methods are accepted for IRFIZ48VPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFIZ48VPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFIZ48VPBF?

IRFIZ48VPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFIZ48VPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFIZ48VPBF?

For technical support, including IRFIZ48VPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFIZ48VPBF requirements.

6.How does Aetrix verify that IRFIZ48VPBF is sourced from the original manufacturer or authorized distributors?

All IRFIZ48VPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFIZ48VPBF meets industry standards.

7.What is the process for return or replacement of IRFIZ48VPBF?

All IRFIZ48VPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFIZ48VPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFIZ48VPBF part is unused and in its original packaging.

Return procedure for IRFIZ48VPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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