Infineon Technologies IRFL024NPBF
- Part No.:
- IRFL024NPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRFL024NPBF.pdf
- Description:
- MOSFET N-CH 55V 2.8A SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:9,762
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Product details
Overview
IRFL024NPBF from Infineon (formerly International Rectifier) is a 55V, 2.8A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 0.075Ω RDS(on) at VGS = 10V, 100% avalanche-rated operation, and fast 13.4ns rise time. It serves as a low-side switching element in DC-DC converters, LED drivers, and load-switching circuits where thermal efficiency and ruggedness are critical.
For engineers reviewing the IRFL024NPBF datasheet, IRFL024NPBF pinout, IRFL024NPBF application, or IRFL024NPBF equivalent, key selection criteria include its 55V VDSS, 0.075Ω on-resistance, SOT-223 thermal performance (RθJA = 90°C/W on FR-4), 214mJ single-pulse avalanche energy, and gate charge profile (Qg = 18.3nC).
Technical Context
This HEXFET® fifth-generation device uses advanced silicon processing to minimize conduction loss per unit area while maintaining robust dv/dt immunity (5.0V/ns) and full unclamped inductive switching capability. Its body diode exhibits 35–53ns reverse recovery time and 50–75nC Qrr, enabling efficient synchronous rectification in medium-frequency SMPS topologies.
The MOSFET operates across –55°C to +150°C junction temperature range with ±20V gate voltage tolerance and 0.056V/°C breakdown voltage temperature coefficient. Its SOA is defined by RDS(on) limitation at low VDS and thermal constraints at high pulse widths, validated up to 10ms pulses at 150°C case temperature.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for input voltage in buck converters or motor drive half-bridges. |
| RDS(on) | 0.075Ω @ VGS = 10V, ID = 2.8A - Enables ≤210mW conduction loss at rated current, reducing heatsink requirements in space-constrained SMT designs. |
| ID (continuous) | 2.8A @ TA = 25°C - Sustained current capability on standard FR-4 PCB with minimum footprint; derates to 2.3A at 70°C ambient. |
| EAS | 214mJ - Single-pulse avalanche energy rating confirms reliability under inductive turn-off stress without external snubbers. |
| Qg | 18.3nC - Total gate charge determines driver strength requirement; enables <25ns switching transitions with 24Ω gate resistor. |
| RθJA | 90°C/W (FR-4) - Thermal resistance defines maximum power dissipation (1.0W) before exceeding 150°C junction temperature. |
| tr/tf | 13.4ns / 17.7ns - Fast edge rates support >500kHz switching frequencies while minimizing overlap loss in hard-switched topologies. |
Pinout & Package
SOT-223 package features three leads plus an exposed thermal tab (Drain-connected) for enhanced PCB heat spreading. The molded plastic body measures 7.55 × 6.90 × 1.85 mm and supports vapor-phase, infrared, and wave soldering.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (Source) | Source terminal of N-channel MOSFET | Reference node for gate drive; connects to ground or low-side return path; carries full load current. |
| Pin 2 (Gate) | Control electrode | High-impedance input requiring ≥2.0V threshold; driven by logic-level or dedicated gate driver ICs. |
| Pin 3 (Drain) | Power output terminal | Connected to load or supply rail; electrically tied to exposed thermal pad for improved thermal conduction. |
| Tab (Drain) | Thermal and electrical connection | Exposed copper pad soldered to large PCB copper area; provides primary heat path and reduces RθJA by ~40% vs. standard SOT-23. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 0.075Ω enables <210mW conduction loss at 2.8A, reducing thermal stress in compact power stages. |
| Fully avalanche-rated | 214mJ EAS ensures reliable operation during inductive switching transients without derating or snubber circuits. |
| Fast switching | 13.4ns rise time and 17.7ns fall time support high-frequency PWM control with minimal switching loss. |
| Lead-free SOT-223 | RoHS-compliant package with enlarged thermal tab improves thermal resistance by 30–40% over standard SOT-23 equivalents. |
| Dynamic dv/dt immunity | Rated for 5.0V/ns, preventing false turn-on in noisy high-speed switching environments like motor drives. |
Applications
| DC-DC Buck Converter | LED Constant-Current Driver |
|---|---|
Use Scenario: Step-down regulation from 12–48V input to 3.3–24V output in industrial IoT sensors and programmable logic controllers. IC Role / Device Role / Timing Role: Low-side synchronous rectifier controlled by PWM controller; switches at 200–500kHz with duty cycle modulation. Use Value: 0.075Ω RDS(on) minimizes conduction loss in high-duty-cycle operation, improving efficiency by ≥1.2% over 0.1Ω alternatives at 2A load. | Use Scenario: Constant-current dimming of high-brightness white LEDs in architectural lighting and signage systems. IC Role / Device Role / Timing Role: Current-sense switch in linear or PWM-controlled LED string drivers; handles pulsed currents up to 11.2A peak. Use Value: 214mJ avalanche rating absorbs inductive kickback from LED inductor during PWM off-time, eliminating need for external flyback diodes. |
| Load Switch for 24V Systems | Motor Control (Small DC Brushed) |
Use Scenario: Hot-swap protection and power sequencing in 24V industrial control modules and fieldbus interface cards. IC Role / Device Role / Timing Role: High-side or low-side load switch controlled by microcontroller GPIO; activated/deactivated on demand. Use Value: ±20V gate rating allows direct 3.3V/5V logic drive with series resistor; 2.8A continuous rating supports typical PLC I/O module loads. | Use Scenario: H-bridge half-bridge leg in battery-powered portable tools and small actuators (e.g., valve positioners). IC Role / Device Role / Timing Role: Low-side switch in dual-MOSFET bridge configuration; commutated at ≤20kHz with dead-time control. Use Value: 55V VDSS accommodates 24V nominal bus with 100% margin for back-EMF spikes; 13.4ns tr enables precise PWM timing resolution. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| DMN3020LSD-13 | RDS(on) = 0.03Ω @ 4.5V, but VDSS = 30V; smaller SOT-23 package limits thermal handling. | Better for 3.3V logic-driven 5V–12V systems; unsuitable for 24V+ bus voltages due to lower breakdown rating. | Select when gate drive is limited to 4.5V and VDS never exceeds 25V; avoid in 24V industrial environments. |
| IPD220N06N3G | RDS(on) = 0.0022Ω @ 10V, TO-252 package; higher current (60A) but larger footprint and cost. | Targeted at high-power motor drives; overqualified for sub-3A loads where SOT-223 size and cost matter. | Choose only if >5A continuous current or <2mΩ RDS(on) is required; otherwise IRFL024NPBF offers optimal size/performance balance. |
Compared with DMN3020LSD-13 and IPD220N06N3G, IRFL024NPBF uniquely balances 55V robustness, SOT-223 thermal performance, and 0.075Ω on-resistance in a cost-sensitive, space-limited 2–3A switching application.
Availability
IRFL024NPBF is available at Aetrix Electronics and suitable for DC-DC buck converters, LED constant-current drivers, and 24V load-switching applications requiring stable component supply and long-term industrial availability.
Supply support for IRFL024NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies acquired International Rectifier in 2015 and continues to develop and manufacture its HEXFET® power MOSFET portfolio with focus on efficiency, ruggedness, and automotive-grade reliability.
The IRFL024NPBF belongs to the fifth-generation HEXFET® family, engineered for high-efficiency, surface-mount power switching in industrial automation, lighting, and embedded power supplies where thermal density and transient robustness are critical.
FAQ
What is the maximum continuous drain current at 70°C ambient temperature?
The IRFL024NPBF delivers 2.3A continuous drain current at TA = 70°C with VGS = 10V, based on thermal derating from its 2.8A rating at 25°C ambient. This value assumes use of the minimum recommended FR-4 footprint and accounts for RθJA = 90°C/W and 150°C maximum junction temperature.
Is the SOT-223 thermal tab electrically isolated?
No, the exposed thermal tab on the IRFL024NPBF is internally connected to the Drain terminal. When soldered to a PCB copper pour, it must be routed to the same net as the Drain pin to avoid short circuits or unintended voltage coupling to other layers.
Can IRFL024NPBF be driven directly from a 3.3V microcontroller GPIO?
Driving the IRFL024NPBF directly from a 3.3V GPIO is not recommended: its VGS(th) ranges from 2.0–4.0V, and RDS(on) is specified at 10V. At 3.3V, the device operates in linear region with significantly higher on-resistance (>0.5Ω), causing excessive heating and unreliable switching.
What is the significance of the "PbF" suffix in the part number?
The "PbF" suffix indicates that the IRFL024NPBF is a lead-free, RoHS-compliant product. It confirms compliance with EU Directive 2011/65/EU and uses matte tin plating on terminals, with no lead content in die attach, mold compound, or finish-verified per JEDEC J-STD-020 moisture sensitivity level 1.
IRFL024NPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tube
- Product Status:
- Discontinued at Digi-Key
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 2.8A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 75mOhm @ 2.8A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 18.3 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 400 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRFL024NPBF FAQ
1.How can I place an order for IRFL024NPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFL024NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFL024NPBF reliable?
The price and inventory of IRFL024NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL024NPBF is usually 5 days.
3.What payment methods are accepted for IRFL024NPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL024NPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFL024NPBF?
IRFL024NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFL024NPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFL024NPBF?
For technical support, including IRFL024NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL024NPBF requirements.
6.How does Aetrix verify that IRFL024NPBF is sourced from the original manufacturer or authorized distributors?
All IRFL024NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL024NPBF meets industry standards.
7.What is the process for return or replacement of IRFL024NPBF?
All IRFL024NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL024NPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFL024NPBF part is unused and in its original packaging.
Return procedure for IRFL024NPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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