Infineon Technologies IRFL024Z
- Part No.:
- IRFL024Z
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-261-4, TO-261AA
- Datasheet:
-
IRFL024Z.pdf
- Description:
- MOSFET N-CH 55V 5.1A SOT223
- Quantity:
- Payment:

- Shipping:

Inventory:7,797
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Product details
Overview
IRFL024Z from Infineon Technologies is an N-channel automotive-grade HEXFET® Power MOSFET in SOT-223 package, rated for 55V VDSS, 5.1A continuous drain current at 25°C, and 57.5mΩ RDS(on) at VGS = 10V. It features 150°C maximum junction temperature, fast switching (tr = 21ns, tf = 23ns), and tested repetitive avalanche capability up to Tjmax, making it suitable for automotive load switching and DC-DC converter high-side applications.
For engineers reviewing the IRFL024Z datasheet, IRFL024Z pinout, IRFL024Z application, or IRFL024Z equivalent, key selection criteria include its low on-resistance per silicon area, thermal robustness under pulsed loads, body diode recovery performance (trr = 15–23ns, Qrr = 9.8–15nC), and validated avalanche energy rating (EAS = 32mJ, tested).
Technical Context
This MOSFET employs advanced planar processing to minimize RDS(on) while maintaining ruggedness. Its gate threshold voltage (2.0–4.0V) enables reliable turn-on with standard 3.3V/5V logic-level drivers when used with appropriate gate drive strength.
The device integrates a monolithic body diode with VSD ≤ 1.3V at 3.1A and exhibits controlled reverse recovery (Qrr = 9.8–15nC), supporting efficient synchronous rectification and inductive load switching in automotive power distribution modules.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche; supports 24V automotive systems with 2× transient margin. |
| RDS(on) | 57.5mΩ max @ VGS = 10V - Enables <150mW conduction loss at 5.1A, critical for thermally constrained PCB layouts. |
| ID (25°C) | 5.1A continuous - Rated for sustained current in ambient temperatures up to 70°C with derating. |
| TJ max | 150°C - Allows operation in engine bay environments without forced cooling. |
| EAS | 32mJ (tested) - Confirmed single-pulse avalanche energy; supports unclamped inductive switching in relay drivers. |
| tr/tf | 21ns/23ns - Fast edge rates reduce switching losses in PWM frequencies up to 500kHz. |
| Qg | 14nC max - Determines gate driver current requirement (~14mA avg. for 1MHz switching with 10V swing). |
Pinout & Package
SOT-223 package: surface-mount, 4-pin (3 active + tab), with exposed drain pad for thermal conduction to PCB copper. Tab is electrically connected to Drain (Pin 2).
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Pin 1 (G) | Gate | Control terminal; requires ≥10V for full enhancement; threshold range 2.0–4.0V ensures compatibility with 3.3V microcontrollers when driven via buffer. |
| Pin 2 (D) | Drain | Main power output terminal; internally connected to metal tab for enhanced thermal dissipation and high-current routing. |
| Pin 3 (S) | Source | Reference node for gate drive; ties to ground or low-side return path; body diode anode is internal to Source. |
| Tab (D) | Drain (thermal & electrical) | Exposed copper pad soldered to PCB pour; provides primary thermal path (RθJA = 45°C/W on 1″² Cu). |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 46.2mΩ typical at 10V - Reduces I²R losses in battery-powered and start-stop automotive circuits. |
| 150°C operating temperature | Rated junction limit - Eliminates need for external thermal sensors in under-hood modules. |
| Fast switching speed | ton/toff < 40ns combined - Minimizes overlap loss in half-bridge configurations. |
| Repetitive avalanche rated | Tested to EAS = 32mJ - Enables robustness against inductive kickback in solenoid and motor control without snubbers. |
| Body diode with low Qrr | 9.8–15nC reverse recovery charge - Limits voltage overshoot during freewheeling in buck converters. |
Applications
| Automotive Door Lock Actuator | 12V Battery Protection Circuit |
|---|---|
Use Scenario: Driving 5A resistive-inductive door lock solenoid with 100ms pulses and 10% duty cycle. IC Role / Device Role / Timing Role: High-side switch controlling solenoid energization; handles inductive flyback via intrinsic avalanche rating. Use Value: Eliminates external flyback diode due to tested 32mJ avalanche energy and 150°C Tj rating. | Use Scenario: Reverse polarity and overcurrent protection between car battery and infotainment ECU. IC Role / Device Role / Timing Role: Low-loss series pass element in ideal diode configuration; body diode blocks reverse current. Use Value: 57.5mΩ RDS(on) limits forward drop to <300mV at 5A, reducing heat generation vs. Schottky alternatives. |
| Engine Control Unit (ECU) Fuel Injector Driver | Automotive HVAC Blower Motor Control |
Use Scenario: Switching 4A fuel injector coil at 10–20Hz with precise pulse-width modulation. IC Role / Device Role / Timing Role: Low-side switch with fast turn-off (tf = 23ns) to minimize coil de-energization delay. Use Value: Controlled Qrr (9.8–15nC) prevents voltage spikes >60V during coil collapse, protecting MCU GPIOs. | Use Scenario: PWM-controlled blower motor (3–5A, 24V) with variable speed and thermal overload conditions. IC Role / Device Role / Timing Role: High-side power switch with integrated thermal margin; operates continuously at 70°C ambient. Use Value: 150°C Tj rating allows full 5.1A current without derating in sealed HVAC enclosures. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP55NF06L | 60V VDSS, 55mΩ RDS(on), TO-220 package, 175°C Tj | Larger footprint; higher thermal mass; not SOT-223 compatible | Preferred where board space permits and higher surge current is needed. |
| DMN3028LSD-13 | 30V VDSS, 28mΩ RDS(on), SOT-223, 150°C Tj | Lower voltage rating; unsuitable for 24V transients or 42V systems | Only viable in 12V-only subsystems with strict RDS(on) targets. |
Compared with STP55NF06L and DMN3028LSD-13, IRFL024Z uniquely balances 55V rating, SOT-223 form factor, and automotive-qualified avalanche performance-making it optimal for space-constrained 24V load switches where reliability under transient stress is non-negotiable.
Availability
IRFL024Z is available at Aetrix Electronics and suitable for automotive body electronics, battery management systems, and industrial power supplies requiring stable component supply across extended temperature ranges and long production lifecycles.
Supply support for IRFL024Z includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification standards aligned to AEC-Q101.
The IRFL024Z belongs to Infineon's automotive-qualified HEXFET® Power MOSFET product line, engineered specifically for high-reliability 12V/24V vehicle subsystems including lighting, actuation, and power distribution.
FAQ
Is IRFL024Z AEC-Q101 qualified?
Yes, IRFL024Z is explicitly qualified to AEC-Q101 Rev D for automotive applications. The datasheet states "Specifically designed for Automotive applications" and lists 150°C Tj operation, tested avalanche energy, and thermal derating curves consistent with AEC-Q101 stress test requirements.
What is the recommended PCB layout for thermal performance?
Mount the SOT-223 tab directly to ≥1 inch² of 2oz copper pour using multiple thermal vias (≥6× 0.3mm diameter) to inner ground planes. This achieves the specified RθJA = 45°C/W. Avoid narrow traces on drain/source paths to prevent localized heating above 150°C.
Can IRFL024Z be driven directly by a 3.3V microcontroller GPIO?
No-its VGS(th) max is 4.0V, but full enhancement (RDS(on) ≤ 57.5mΩ) requires VGS ≥ 10V. A 3.3V GPIO cannot reliably achieve this; a gate driver (e.g., TC4427) or level-shifting buffer is required for low-loss operation.
Does IRFL024Z include integrated ESD protection?
No-IRFL024Z has no built-in ESD protection circuitry. Gate oxide withstands ±20V per Absolute Maximum Ratings. External TVS diodes (e.g., SMAJ5.0A) and series gate resistors (≥10Ω) are required in automotive harness-connected designs to suppress ISO 10605 transients.
IRFL024Z Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-261-4, TO-261AA
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 5.1A (Ta)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 57.5mOhm @ 3.1A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 14 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 340 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 1W (Ta)
- Operating Temperature:
- -55°C ~ 150°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- SOT-223
IRFL024Z FAQ
1.How can I place an order for IRFL024Z through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFL024Z on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFL024Z reliable?
The price and inventory of IRFL024Z are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL024Z is usually 5 days.
3.What payment methods are accepted for IRFL024Z?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL024Z transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFL024Z?
IRFL024Z orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFL024Z order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFL024Z?
For technical support, including IRFL024Z datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL024Z requirements.
6.How does Aetrix verify that IRFL024Z is sourced from the original manufacturer or authorized distributors?
All IRFL024Z products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL024Z meets industry standards.
7.What is the process for return or replacement of IRFL024Z?
All IRFL024Z units undergo pre-shipment inspection (PSI). If there is an issue with IRFL024Z, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFL024Z part is unused and in its original packaging.
Return procedure for IRFL024Z:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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