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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFL4105TR

Name: IRFL4105TR
Brand: Infineon Technologies
SKU: IRFL4105TR
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL4105TR

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL4105TR.pdf

Description:: MOSFET N-CH 55V 3.7A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL4105TR from International Rectifier is a 55V, 3.7A N-channel enhancement-mode power MOSFET in SOT-223 package, featuring 0.045Ω R_DS(on) at V_GS = 10V, 1.0W PCB-mount power dissipation, and fully avalanche-rated ruggedness. It serves as a high-efficiency, surface-mount switching device in DC-DC converters, motor drivers, and load-switching circuits operating up to 150°C junction temperature.

For engineers reviewing the IRFL4105TR datasheet, IRFL4105TR pinout, IRFL4105TR application, or IRFL4105TR equivalent, key selection criteria include verified R_DS(on), thermal resistance (90°C/W on FR-4), gate charge (23 nC typ), body diode recovery (55 ns trr), and unclamped inductive switching capability (110 mJ E_AS).

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining fast switching (t_r = 12 ns, t_f = 12 ns) and robust dv/dt immunity (5.0 V/ns). Its integrated body diode supports synchronous rectification and inductive load commutation.

The SOT-223 package features an enlarged copper tab for enhanced heatsinking-enabling 2.1W power dissipation on 1-inch² copper board-while remaining compatible with standard SMT pick-and-place equipment and vapor-phase reflow profiles.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum drain-source blocking voltage before avalanche onset; defines safe operation in 24–48V bus systems.
R_DS(on)	0.045Ω @ V_GS = 10V, I_D = 3.7A - Enables <165mW conduction loss at full rated current, critical for thermally constrained SMT designs.
Q_g	23 nC typ - Determines gate drive energy requirement; enables efficient switching with low-power drivers in battery-powered applications.
t_r/t_f	12 ns / 12 ns - Supports >1 MHz switching frequencies with minimal overlap loss in hard-switched topologies.
E_AS	110 mJ - Quantifies single-pulse avalanche energy handling; allows reliable operation under inductive turn-off stress without external snubbers.
R_θJA	90°C/W (FR-4) - Defines thermal rise per watt on standard PCB; sets maximum continuous power at ambient (e.g., 0.89W at T_A = 70°C).
trr	55 ns typ - Body diode reverse recovery time; impacts efficiency and EMI in freewheeling paths of buck or half-bridge converters.

Pinout & Package

SOT-223 (TO-261AA) surface-mount package with exposed drain tab for thermal conduction. Three-terminal configuration: Drain (Tab), Source (Pin 1), Gate (Pin 2); Pin 3 is internally connected to Drain (Tab) for mechanical reinforcement and thermal enhancement.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal	Reference node for gate drive; connects to low-side return path; carries full load current in low-side switch configurations.
Pin 2 (Gate)	Control input	High-impedance MOSFET control node requiring ≤±20V rating; 23 nC total charge dictates driver strength requirements.
Pin 3 (Drain)	Drain terminal	Internally bonded to exposed copper tab; primary heat transfer path to PCB copper; must be routed to high-current/high-voltage nodes.
Tab (Drain)	Drain terminal & thermal pad	Electrically and thermally identical to Pin 3; requires solder mask opening and thermal via array for optimal PCB heat extraction.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	0.045Ω enables <165mW conduction loss at 3.7A, reducing thermal footprint in space-constrained SMT layouts.
Fully avalanche-rated	110 mJ single-pulse energy rating eliminates need for external clamping in inductive switching applications like solenoid drivers.
Fast body diode recovery	55 ns trr minimizes reverse recovery losses and associated EMI in synchronous rectifier and freewheeling roles.
Enhanced thermal performance	SOT-223 tab design achieves 50°C/W R_θJA on 1-inch² copper-nearly 2× better than standard SO-8 equivalents.
Dynamic dv/dt immunity	5.0 V/ns rated diode recovery dv/dt prevents false turn-on during high-slew-rate transients in noisy industrial environments.

Applications

DC-DC Buck Converter

Brushed DC Motor Driver

Use Scenario: High-efficiency 12V-to-5V/3.3V point-of-load conversion in embedded controllers and IoT edge nodes.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier MOSFET, switching at 500 kHz–1 MHz with gate-driven timing controlled by PWM controller.

Use Value: 0.045Ω R_DS(on) reduces conduction loss by >30% vs. comparable 0.065Ω devices, enabling higher efficiency at 2A–3A loads without heatsinking.

Use Scenario: H-bridge or half-bridge control of 12V/24V brushed motors in portable tools and robotics.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology, handling bidirectional current during PWM-driven direction reversal.

Use Value: Fully avalanche-rated operation withstands inductive kickback during rapid PWM shutdown, eliminating need for external flyback diodes.

LED Load Switch

Power Supply OR-ing

Use Scenario: On/off control of high-brightness LED strings in automotive interior lighting and signage.

IC Role / Device Role / Timing Role: High-side or low-side load switch activated by microcontroller GPIO, operating in linear or saturated mode.

Use Value: 55V V_DSS accommodates 48V transient surges per ISO 7637-2; 150°C max T_J ensures reliability in sealed enclosures.

Use Scenario: Redundant 12V supply OR-ing in industrial PLC backplanes and telecom power distribution units.

IC Role / Device Role / Timing Role: Ideal diode replacement in active OR-ing circuit, driven by dedicated controller to minimize forward drop.

Use Value: 0.045Ω R_DS(on) yields <180mV forward drop at 4A-lower than Schottky diodes-reducing heat generation and improving system efficiency.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
DMN3026LSD-13	R_DS(on) = 0.032Ω @ 4.5V, but V_DSS = 30V only; SOT-23-3 package limits power handling.	Not suitable for 48V bus or avalanche-prone inductive loads; limited to low-voltage logic-level switching.	Select only when gate drive is 3.3V/5V and V_DD ≤ 24V; avoid where 55V rating or avalanche robustness is required.
SI2305DS-T1-E3	R_DS(on) = 0.042Ω @ 4.5V, V_DSS = 30V, Q_g = 11 nC; SOT-23 package with 0.5W max power.	Lacks avalanche rating and thermal capacity; unsuitable for motor drives or unclamped inductive switching.	Prefer for ultra-low-power, low-voltage logic-level switching only; not a functional substitute for IRFL4105TR's 55V/avalanche capability.

Compared with DMN3026LSD-13 and SI2305DS-T1-E3, the IRFL4105TR uniquely combines 55V rating, 110 mJ avalanche energy, and SOT-223 thermal performance-making it the only viable choice for 24–48V industrial switching where reliability under electrical stress is non-negotiable.

Availability

IRFL4105TR is available at Aetrix Electronics and suitable for DC-DC converters, brushed motor drivers, LED load switches, and power supply OR-ing applications requiring stable component supply across extended production lifecycles.

Supply support for IRFL4105TR includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

International Rectifier (now part of Infineon Technologies) was a pioneer in power semiconductor innovation, specializing in high-performance MOSFETs, IGBTs, and driver ICs for industrial, automotive, and computing markets.

The HEXFET® Power MOSFET product line-including the IRFL4105TR-was engineered for high-efficiency, ruggedized switching in surface-mount power conversion and motor control, emphasizing low R_DS(on), fast switching, and intrinsic avalanche tolerance.

FAQ

Is IRFL4105TR logic-level compatible?

No. The IRFL4105TR has a gate threshold voltage range of 2.0–4.0V and is specified for R_DS(on) at V_GS = 10V. While it may partially turn on at 5V, its 0.045Ω on-resistance is only guaranteed at 10V drive-making it unsuitable for direct 3.3V or 5V microcontroller GPIO control without level-shifting or gate boosting.

What is the maximum continuous drain current at 70°C ambient?

At T_A = 70°C with standard FR-4 mounting, the IRFL4105TR supports 3.0A continuous drain current. This derating follows its 1.0W power dissipation limit and 90°C/W junction-to-ambient thermal resistance, ensuring T_J remains below 150°C under steady-state conditions.

Can IRFL4105TR replace IRFL014 in existing designs?

Yes, with verification. Both are SOT-223 N-channel MOSFETs, but the IRFL4105TR offers lower R_DS(on) (0.045Ω vs. 0.11Ω), higher V_DSS (55V vs. 60V), and improved thermal resistance. Layout compatibility is confirmed, though gate drive energy increases slightly due to higher Q_g (23 nC vs. ~12 nC).

Does IRFL4105TR require a heatsink on standard PCB?

Not for typical operation. With 1.0W power dissipation on FR-4 and 90°C/W thermal resistance, the junction temperature rises ~90°C above ambient at full load-keeping T_J within 150°C limit at T_A ≤ 60°C. For sustained 3.7A operation above 60°C ambient, thermal vias under the drain tab are recommended.

IRFL4105TR Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 3.7A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 45mOhm @ 3.7A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 35 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 660 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 1W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL4105TR FAQ

1.How can I place an order for IRFL4105TR through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL4105TR on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL4105TR reliable?

The price and inventory of IRFL4105TR are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL4105TR is usually 5 days.

3.What payment methods are accepted for IRFL4105TR?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL4105TR transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL4105TR?

IRFL4105TR orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL4105TR order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL4105TR?

For technical support, including IRFL4105TR datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL4105TR requirements.

6.How does Aetrix verify that IRFL4105TR is sourced from the original manufacturer or authorized distributors?

All IRFL4105TR products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL4105TR meets industry standards.

7.What is the process for return or replacement of IRFL4105TR?

All IRFL4105TR units undergo pre-shipment inspection (PSI). If there is an issue with IRFL4105TR, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL4105TR part is unused and in its original packaging.

Return procedure for IRFL4105TR:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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