Send an Inquiry

To receive a quote for your project, please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Part Number*
Quantity*
Message
Submit Inventory List

Please fill in the following information, and we’ll get back to you promptly.

Name*
Company*
Email Address*
Phone/WhatsApp
Upload My List
Message

Infineon Technologies IRFL4310PBF

Part No.:
IRFL4310PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-261-4, TO-261AA
Datasheet:
AetrixIRFL4310PBF.pdf
Description:
MOSFET N-CH 100V SOT223
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:2,205

Please send an inquiry. Send us your inquiry, and we will respond immediately.

Part Number
Quantity*
Price
Name*
Company
Email*
Comments

Product details

Overview

IRFL4310PBF from Infineon Technologies (formerly International Rectifier) is a surface-mount N-channel enhancement-mode Power MOSFET in SOT-223 package, rated for 100V VDSS, 0.20Ω RDS(on) at VGS = 10V and ID = 1.6A, with fast switching (tr = 18ns, tf = 20ns) and 47mJ single-pulse avalanche energy. It serves as a low-power load switch or DC-DC synchronous rectifier in compact power supplies.

For engineers reviewing the IRFL4310PBF datasheet, IRFL4310PBF pinout, IRFL4310PBF application, or IRFL4310PBF equivalent, key selection criteria include its 1.0W PCB-mount power dissipation, 93°C/W junction-to-ambient thermal resistance on FR-4, 2.2A continuous drain rating at 25°C, and body diode reverse recovery time of 72–110ns under defined test conditions.

Technical Context

This HEXFET® device uses fifth-generation silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged avalanche capability (EAS = 47mJ). Its gate charge profile (Qg = 17–25nC, Qgd = 7.8–12nC) supports efficient high-frequency switching up to several hundred kHz in non-isolated converters.

The integrated body diode exhibits VSD = 1.3V at IS = 1.6A and TJ = 25°C, with reverse recovery charge Qrr = 210–320nC and trr = 72–110ns at di/dt = 100A/µs - critical for minimizing commutation losses in synchronous buck topologies.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - maximum blocking voltage before avalanche conduction begins
RDS(on)0.20Ω @ VGS = 10V, ID = 1.6A - determines conduction loss in linear or saturated operation
ID (continuous)1.6A @ TA = 25°C on FR-4 - usable current limit without heatsink in standard layout
tr/tf18ns/20ns - enables <500kHz PWM operation with minimal switching loss
EAS47mJ - quantifies single-event avalanche robustness during inductive turn-off
Qg17–25nC - defines gate drive energy required for full enhancement
RθJA93°C/W (FR-4), 48°C/W (1″ Cu) - sets thermal headroom for ambient temperature derating

Pinout & Package

SOT-223 (TO-261AA) package with exposed drain tab for enhanced thermal conduction; lead-free (PbF) compliant; compatible with vapor-phase, infrared, and wave soldering.

Pin/TerminalCircuit RoleDesign Meaning
Pin 1 (Source)Source terminal (S)Reference node for gate drive; connects to ground or low-side return path
Pin 2 (Gate)Control input (G)High-impedance MOSFET control node requiring ~17nC total charge for full turn-on
Pin 3 (Drain)Power output (D)Connected to high-side rail or inductive load; electrically tied to exposed metal tab
Tab (Drain)Thermal & electrical drain connectionPrimary heat path to PCB copper; must be routed to power plane or heatsink area

Key Features

FeatureDesign Value
Ultra-low RDS(on)0.20Ω enables <0.5W conduction loss at 1.6A, reducing need for external heatsinking
Fast dv/dt rating5.0V/ns - ensures immunity to false triggering during high-slew-rate transients
Easy parallelingPositive temperature coefficient of RDS(on) allows stable current sharing across multiple devices
Lead-free SOT-223RoHS-compliant packaging with improved thermal performance vs. standard SOT-23

Applications

LED Constant-Current DriverUSB-C Power Delivery Switch

Use Scenario: Regulating current through high-brightness LED strings in portable lighting systems.

IC Role / Device Role / Timing Role: Low-side constant-current switch controlled by analog or PWM signal.

Use Value: 0.20Ω RDS(on) minimizes voltage drop and thermal rise at 1–1.6A, enabling compact board layout without forced air cooling.

Use Scenario: Enabling/disabling 5–20V power paths in USB-C PD sink applications.

IC Role / Device Role / Timing Role: Load switch for VBUS control with fast turn-on/off timing (td(on) = 7.8ns).

Use Value: 47mJ avalanche rating protects against inductive kickback during hot-plug events without external clamping.

DC-DC Synchronous RectifierIndustrial Sensor Power Switch

Use Scenario: Replacing Schottky diodes in 12V-input buck converters for IoT edge nodes.

IC Role / Device Role / Timing Role: Synchronous rectifier driven by controller's complementary gate signal.

Use Value: Body diode trr = 72–110ns and Qrr = 210–320nC reduce reverse recovery loss versus discrete diodes.

Use Scenario: Isolating 24V sensor supply rails in programmable logic controllers.

IC Role / Device Role / Timing Role: High-reliability, low-leakage (IDSS ≤ 25µA) power switch with overtemperature margin.

Use Value: -55°C to +150°C operating range and 1.3V VSD ensure stable startup and fault tolerance in harsh environments.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel low-voltage power switching applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
DMN2016LFG-7RDS(on) = 0.18Ω @ 4.5V, lower VGS(th) (1.0–2.5V), SOT-23 packageHigher gate sensitivity enables direct microcontroller drive; lower thermal mass limits power handlingSelect when gate drive voltage is ≤5V and power dissipation remains <0.5W
SI2302DS-T1-E3RDS(on) = 0.095Ω @ 4.5V, higher ID (2.6A), same SOT-23 footprintSuperior conduction efficiency but reduced avalanche robustness (EAS = 12mJ)Prefer for battery-powered systems where efficiency dominates reliability requirements

Compared with DMN2016LFG-7 and SI2302DS-T1-E3, the IRFL4310PBF trades slightly higher RDS(on) for significantly greater avalanche energy (47mJ vs. ≤12mJ), making it more suitable for inductive load switching where voltage transients cannot be fully clamped.

Availability

IRFL4310PBF is available at Aetrix Electronics and suitable for LED drivers, USB-C power switches, DC-DC synchronous rectifiers, and industrial sensor power management requiring stable component supply and long-term manufacturability.

Supply support for IRFL4310PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues its legacy of high-performance power semiconductors, emphasizing reliability, thermal efficiency, and automotive-grade qualification.

The HEXFET® Power MOSFET product line targets cost-sensitive, space-constrained power conversion applications - especially those demanding ruggedness, fast switching, and ease of PCB thermal design.

FAQ

What is the maximum safe operating temperature for IRFL4310PBF?

The junction temperature must not exceed +150°C under any condition. With RθJA = 93°C/W on FR-4, ambient temperature must stay below +57°C at full 1.6A continuous current to maintain 25°C safety margin. Derating begins at 8.3mW/°C above 25°C ambient.

Can IRFL4310PBF be driven directly from a 3.3V microcontroller GPIO?

No - its gate threshold voltage ranges from 2.0V to 4.0V, and full enhancement requires ≥10V for specified RDS(on). At 3.3V, RDS(on) exceeds 1.5Ω, causing excessive conduction loss. A gate driver or level-shifter is required for reliable switching.

Does IRFL4310PBF have built-in ESD protection?

No integrated ESD protection diode is specified in the datasheet. Gate oxide is rated for ±20V VGS, but real-world handling requires external 10kΩ series resistor and/or TVS clamp to prevent damage from human-body-model discharges exceeding 2kV.

How does the SOT-223 package improve thermal performance over SOT-23?

The SOT-223 exposes the drain as a large copper tab soldered directly to PCB copper, reducing RθJA to 48°C/W on 1″² copper - nearly half that of typical SOT-23 devices. This allows 2.1W power dissipation in optimized layouts versus ~0.5W for SOT-23 equivalents.

IRFL4310PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
-
Package/Case:
TO-261-4, TO-261AA
Packaging:
Tape & Reel (TR)
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
2.2A (Ta)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
-
Vgs(th) (Max) @ Id:
-
Gate Charge (Qg) (Max) @ Vgs:
25 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
330 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
1W (Ta)
Operating Temperature:
-55°C ~ 150°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Surface Mount
Supplier Device Package:
-

IRFL4310PBF FAQ

1.How can I place an order for IRFL4310PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL4310PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL4310PBF reliable?

The price and inventory of IRFL4310PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL4310PBF is usually 5 days.

3.What payment methods are accepted for IRFL4310PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL4310PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL4310PBF?

IRFL4310PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL4310PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL4310PBF?

For technical support, including IRFL4310PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL4310PBF requirements.

6.How does Aetrix verify that IRFL4310PBF is sourced from the original manufacturer or authorized distributors?

All IRFL4310PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL4310PBF meets industry standards.

7.What is the process for return or replacement of IRFL4310PBF?

All IRFL4310PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL4310PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL4310PBF part is unused and in its original packaging.

Return procedure for IRFL4310PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

IRFL4310PBF Tags

  • IRFL4310PBF
  • IRFL4310PBF PDF
  • IRFL4310PBF Datasheet
  • IRFL4310PBF Specifications
  • IRFL4310PBF Images
  • Infineon Technologies
  • Infineon Technologies IRFL4310PBF
  • Buy IRFL4310PBF
  • IRFL4310PBF Price
  • IRFL4310PBF Distributor
  • IRFL4310PBF Supplier
  • IRFL4310PBF Wholesale
Related Products
BSZ180P03NS3EGATMA1
BSZ180P03NS3EGATMA1

Infineon Technologies

SIRA14DP-T1-GE3
SIRA14DP-T1-GE3

Vishay Siliconix

AO4419
AO4419

Alpha & Omega Semiconductor Inc.

SISA14BDN-T1-GE3
SISA14BDN-T1-GE3

Vishay Siliconix

PSMN9R5-30YLC,115
PSMN9R5-30YLC,115

Nexperia USA Inc.

BUK9Y21-40E,115
BUK9Y21-40E,115

Nexperia USA Inc.

RTQ035N03HZGTR
RTQ035N03HZGTR

Rohm Semiconductor

FDMS7680
FDMS7680

onsemi

RQ3E180BNTB
RQ3E180BNTB

Rohm Semiconductor

STL6N2VH5
STL6N2VH5

STMicroelectronics

DMPH4029LFGQ-7
DMPH4029LFGQ-7

Diodes Incorporated

DMT6015LSS-13
DMT6015LSS-13

Diodes Incorporated

Tech Hub

Search

Search

PRODUCT

PRODUCT

PHONE

PHONE

USER

USER