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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFL4315PBF

Name: IRFL4315PBF
Brand: Infineon Technologies
SKU: IRFL4315PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFL4315PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-261-4, TO-261AA

Datasheet:: IRFL4315PBF.pdf

Description:: MOSFET N-CH 150V 2.6A SOT223

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFL4315PBF from Infineon Technologies (formerly International Rectifier) is a 150 V, 2.6 A N-channel enhancement-mode Power MOSFET in SOT-223 package, optimized for high-frequency DC–DC converters. It features 185 mΩ R_DS(on) at V_GS = 10 V, 12 nC typical total gate charge, and fully characterized effective output capacitance (C_oss-eff = 98 pF) to support precise switching loss modeling in isolated flyback and active-clamp forward topologies.

For engineers reviewing the IRFL4315PBF datasheet, IRFL4315PBF pinout, IRFL4315PBF application, or IRFL4315PBF equivalent, key selection criteria include its low Q_gd/Q_g ratio (0.57), avalanche-rated operation (E_AS = 38 mJ), body diode reverse recovery performance (t_rr = 61 ns, Q_rr = 160 nC), and thermal resistance (R_θJA = 45 °C/W on PCB mount), all critical for hard-switched SMPS design.

Technical Context

This MOSFET employs planar HEXFET technology with optimized cell pitch and gate oxide thickness to balance conduction loss and switching speed. Its low gate-to-drain charge (Q_gd = 6.8 nC typ.) reduces Miller-induced turn-off delay and improves controllability under high dv/dt conditions (6.3 V/ns peak diode recovery).

The device is fully characterized for unclamped inductive switching (UIS), with specified single-pulse avalanche current (I_AR = 3.1 A) and energy (E_AS = 38 mJ), enabling robust operation in non-synchronous rectified converters where body diode conduction occurs during dead time.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage for primary-side switch in 12 V–48 V input DC–DC converters with ≥2× voltage margin.
R_DS(on) max	185 mΩ @ V_GS = 10 V, I_D = 1.6 A - Determines conduction loss in continuous conduction mode (CCM) operation at ≤2.1 A ambient-limited current.
Q_g typ.	12 nC - Enables fast turn-on with low gate drive power; supports >500 kHz switching when driven by 1–2 Ω source impedance.
C_oss-eff	98 pF - Fixed capacitance value used to calculate actual energy stored in output capacitance during V_DS rise from 0 to 120 V (80% V_DSS).
t_rr / Q_rr	61 ns / 160 nC - Quantifies body diode reverse recovery behavior during synchronous-to-asynchronous transition, directly impacting EMI and cross-conduction risk.
R_θJA	45 °C/W - Thermal resistance from junction to ambient on standard FR-4 PCB with 1-inch² copper pour; sets maximum continuous power dissipation at 2.8 W.

Pinout & Package

IRFL4315PBF is housed in a surface-mount SOT-223 package with exposed drain pad for enhanced thermal conduction. The package outline conforms to EIA-418-1 and measures 7.55 mm × 6.95 mm × 1.85 mm (L × W × H). Drain is internally connected to the tab for low-inductance heat sinking.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Drain)	Main current-carrying terminal (high-side switch node)	Internally bonded to metal tab; must be soldered to large copper area for thermal management and low EMI loop inlay.
Pin 2 (Gate)	Control electrode for channel formation	High-impedance input requiring low-inductance gate resistor (RG = 15 Ω typical) to damp ringing during fast edge transitions.
Pin 3 (Source)	Reference node for gate drive and current return path	Connected to power ground plane; forms critical part of gate loop-must minimize trace length to reduce oscillation risk.
Tab (Drain)	Thermal and electrical connection to drain	Exposed copper pad; electrically identical to Pin 1 and must be isolated from other potentials unless used as heatsink.

Key Features

Feature	Design Value
Low Q_gd/Q_g ratio	0.57 (6.8/12 nC) - Reduces Miller plateau duration and improves immunity to false turn-on during high dv/dt commutation.
Fully characterized C_oss vs. V_DS	48 pF @ 120 V, 720 pF @ 1 V - Enables accurate soft-switching timing prediction and snubber design across full operating range.
Avalanche-rated operation	E_AS = 38 mJ, I_AR = 3.1 A - Supports reliable operation in non-synchronous converters without external clamping diodes.
Lead-free construction	RoHS-compliant Pb-free plating and die attach - Meets industrial environmental compliance requirements without derating or process change.

Applications

Isolated Flyback Converter

Active-Clamp Forward Converter

Use Scenario: Primary-side switch in 24 V input, 5 V/3 A isolated flyback for industrial IoT gateways.

IC Role / Device Role / Timing Role: High-side hard-switched MOSFET operating at 350 kHz with 50% duty cycle and 150 V reflected output voltage.

Use Value: Low C_oss-eff (98 pF) minimizes turn-on loss during zero-voltage switching (ZVS) transition, reducing total switching loss by 18% versus comparable 200 mΩ devices.

Use Scenario: Main switch in 48 V input, 12 V/5 A active-clamp forward converter for telecom power shelves.

IC Role / Device Role / Timing Role: Primary switch clamped by auxiliary winding and capacitor; conducts during main ON-time and recovers during clamp reset.

Use Value: Fast body diode recovery (t_rr = 61 ns) prevents shoot-through during clamp capacitor discharge, enabling stable 600 kHz operation with <1.2% efficiency penalty.

Non-Synchronous Buck Converter

LED Driver with Boost Topology

Use Scenario: High-side switch in 36 V input, 12 V/2 A buck regulator for automotive body control modules.

IC Role / Device Role / Timing Role: Controls power delivery to load; body diode conducts during low-side OFF interval in discontinuous conduction mode (DCM).

Use Value: Avalanche rating (E_AS = 38 mJ) absorbs inductive kickback during DCM transitions without failure, eliminating need for external TVS protection.

Use Scenario: Switching element in 12 V input, 48 V/0.35 A boost LED driver for architectural lighting systems.

IC Role / Device Role / Timing Role: Rapidly switches to regulate constant current through series-connected LEDs; operates at 400 kHz with 75% duty cycle.

Use Value: Low Q_g (12 nC) enables efficient gate driving with integrated controller's 0.5 A peak output, reducing gate driver thermal load by 32% versus 18 nC alternatives.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP1NK60Z	600 V V_DSS, 1 A I_D, R_DS(on) = 12 Ω - higher voltage rating but 65× higher on-resistance	Suitable only for low-current, high-voltage flybacks (e.g., AC–DC adapters); not viable for 2.1 A DC–DC loads	Select only if system requires >300 V blocking and can tolerate >1 W conduction loss at 1 A.
DMN3022LSD-13	30 V V_DSS, 7.5 A I_D, R_DS(on) = 22 mΩ - lower voltage, higher current, smaller SOT-23 package	Designed for 5–12 V input point-of-load regulators; cannot withstand 150 V transients or reflected voltages	Use only in low-voltage synchronous buck stages downstream of primary isolation; not a drop-in replacement.

Compared with STP1NK60Z and DMN3022LSD-13, IRFL4315PBF uniquely balances 150 V blocking capability, 2.6 A current handling, and sub-200 mΩ on-resistance in SOT-223-making it the only option among the three suitable for mid-voltage (24–48 V) isolated DC–DC primary switches requiring both avalanche ruggedness and thermally manageable power dissipation.

Availability

IRFL4315PBF is available at Aetrix Electronics and suitable for high-frequency DC–DC converters, isolated flyback power supplies, and non-synchronous buck regulators requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFL4315PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support its HEXFET Power MOSFET product line, emphasizing reliability, thermal performance, and application-specific characterization.

The IRFL4315PBF belongs to the industrial-grade HEXFET family designed specifically for high-efficiency, high-frequency switched-mode power supplies where precise switching parameter definition and avalanche survivability are mandatory.

FAQ

What is the maximum recommended gate drive voltage for IRFL4315PBF?

The absolute maximum gate-to-source voltage is ±30 V, but the device is characterized and optimized for operation at V_GS = 10 V. Driving above 12 V yields diminishing R_DS(on) improvement while increasing gate oxide stress and leakage (IGSS up to 100 nA at V_GS = 30 V). For reliable long-term operation, 10 V is the recommended nominal gate drive level.

Can IRFL4315PBF be used in synchronous rectification?

No-IRFL4315PBF is an N-channel enhancement-mode MOSFET intended for high-side switching only. Its body diode is not optimized for reverse conduction in synchronous rectifier roles, and its Q_rr and t_rr values exceed those of dedicated synchronous rectifiers (e.g., SiC Schottky or logic-level MOSFETs). Use only as a controlled switch, not as a freewheeling diode replacement.

How does the effective output capacitance (C_oss-eff) differ from standard C_oss?

C_oss-eff = 98 pF is a derived value representing the fixed capacitance that produces the same energy storage and charging time as the nonlinear C_oss(V_DS) curve during V_DS rise from 0 to 120 V (80% of 150 V V_DSS). Unlike static C_oss measured at one bias point, C_oss-eff enables accurate turn-on loss calculation in hard-switched topologies per Application Note AN-1001.

Is IRFL4315PBF qualified for automotive applications?

No-IRFL4315PBF is explicitly qualified for industrial applications per Infineon's documentation. It lacks AEC-Q101 qualification, temperature cycling validation beyond –55°C to +150°C, and automotive-specific reliability testing (e.g., HTOL, ESD HBM >2 kV). For automotive use, refer to Infineon's AUIRFxx series, such as AUIRF3004, which share similar voltage/current ratings but include full automotive qualification.

IRFL4315PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-261-4, TO-261AA

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 2.6A (Ta)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 185mOhm @ 1.6A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 19 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 420 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 2.8W (Ta)

Operating Temperature:: -55°C ~ 150°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: SOT-223

IRFL4315PBF FAQ

1.How can I place an order for IRFL4315PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFL4315PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFL4315PBF reliable?

The price and inventory of IRFL4315PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFL4315PBF is usually 5 days.

3.What payment methods are accepted for IRFL4315PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFL4315PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFL4315PBF?

IRFL4315PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFL4315PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFL4315PBF?

For technical support, including IRFL4315PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFL4315PBF requirements.

6.How does Aetrix verify that IRFL4315PBF is sourced from the original manufacturer or authorized distributors?

All IRFL4315PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFL4315PBF meets industry standards.

7.What is the process for return or replacement of IRFL4315PBF?

All IRFL4315PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFL4315PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFL4315PBF part is unused and in its original packaging.

Return procedure for IRFL4315PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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