Infineon Technologies IRFP044N

Overview

IRFP044N from Infineon Technologies (formerly International Rectifier) is a 55 V, 140 A, 11.5 mΩ N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-current DC-DC conversion and motor drive switching stages where low R_DS(on) and fast turn-on/turn-off reduce conduction and switching losses.

For engineers reviewing the IRFP044N datasheet, IRFP044N pinout, IRFP044N application, or IRFP044N equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, Q_g of 132 nC, t_f of 60 ns, thermal resistance R_θJC = 0.45 °C/W, and avalanche energy rating of 390 mJ - all critical for high-efficiency, thermally constrained power stage design.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and doped polysilicon gate to achieve stable threshold voltage (V_GS(th) = 2.0–4.0 V) and robust short-circuit withstand time (≥10 µs at V_DD = 30 V). Its body diode exhibits reverse recovery time (t_rr) of 120 ns and Q_rr of 280 nC under I_F = 70 A conditions.

The device supports hard-switched topologies including synchronous buck, half-bridge, and full-bridge converters operating up to 100 kHz. It is rated for repetitive avalanche energy (E_AS) of 390 mJ and features 100% UIS-tested ruggedness per JEDEC JESD22-A109.

Key Specifications

Pinout & Package

IRFP044N uses the industry-standard TO-247AC package with isolated tab (drain-connected), offering high thermal conductivity and mechanical robustness for bolt-down heatsink mounting.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current N-channel MOSFET applications.

Compared with STP140NF55 and IXFH140N10P, IRFP044N offers optimal balance of low R_DS(on), moderate Q_g, and proven avalanche ruggedness - making it preferred for 24–48 V motor drives and DC-DC converters where thermal and switching efficiency are co-constrained.

Availability

IRFP044N is available at Aetrix Electronics and suitable for motor drive inverters, DC-DC synchronous buck converters, and UPS power stages requiring stable component supply across multi-year production cycles.

Supply support for IRFP044N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its high-power MOSFET product lines with full backward compatibility and extended lifecycle support.

The HEXFET® family, including IRFP044N, was engineered for high-current, high-efficiency power conversion in industrial motor control, renewable energy inverters, and server/telecom power supplies.

FAQ

What is the maximum continuous drain current rating for IRFP044N at 25°C case temperature?

The IRFP044N is rated for 140 A continuous drain current (I_D) at T_C = 25°C, measured with the device mounted on an infinite heatsink. Derating applies above 25°C per the R_θJC = 0.45 °C/W specification - at T_C = 100°C, the usable I_D drops to approximately 78 A to maintain T_J ≤ 175°C.

Does IRFP044N have integrated gate protection or require external components?

IRFP044N has no integrated gate protection circuitry. Its gate oxide is ESD-sensitive (HBM Class 1B), requiring external design safeguards: a series gate resistor (typically 10–47 Ω) to dampen ringing, and a bidirectional TVS diode (e.g., SMAJ15A) between gate and source to clamp transients exceeding ±20 V.

Can IRFP044N be used in parallel configurations for higher current handling?

Yes - IRFP044N's positive temperature coefficient of R_DS(on) enables stable current sharing in parallel configurations. Successful implementation requires matched layout (symmetrical gate and source routing), individual gate resistors, and Kelvin source connections to avoid current imbalance due to common-source inductance.

What is the typical reverse recovery charge (Q_rr) of the body diode under standard test conditions?

The body diode Q_rr is 280 nC when tested at I_F = 70 A, di/dt = 100 A/µs, and V_R = 45 V. This value directly impacts commutation loss in half-bridge and synchronous rectifier topologies - lower Q_rr reduces switching loss and EMI generation during diode turn-off.