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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP044NPBF

Name: IRFP044NPBF
Brand: Infineon Technologies
SKU: IRFP044NPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP044NPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP044NPBF.pdf

Description:: MOSFET N-CH 55V 53A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP044NPBF from Infineon Technologies (formerly International Rectifier) is a 55 V, 140 A, 20 mΩ N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-current DC-DC converters and motor drive half-bridges with fast switching and low conduction loss.

For engineers reviewing the IRFP044NPBF datasheet, IRFP044NPBF pinout, IRFP044NPBF application, or IRFP044NPBF equivalent, key selection criteria include R_DS(on) at V_GS = 10 V, Q_g, thermal resistance R_θJC, avalanche ruggedness rating, and gate charge profile for PWM frequency scaling.

Technical Context

This MOSFET employs planar stripe cell structure with optimized gate oxide thickness and source metallization to achieve low R_DS(on) while maintaining >100% rated E_AS (single-pulse avalanche energy). It features fully characterized UIS capability up to T_J = 175 °C and specified gate threshold voltage (V_GS(th)) range of 2.0–4.0 V.

The device supports hard-switched topologies with t_rr ≤ 180 ns and Q_rr ≤ 290 nC at I_D = 70 A, V_DD = 48 V, and T_J = 125 °C - enabling efficient operation in synchronous rectification and H-bridge inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	55 V - maximum drain-source blocking voltage for 48 V bus applications with 20% margin
R_DS(on) @ V_GS = 10 V	20 mΩ - enables <1.4 W conduction loss at 85 A continuous drain current
I_D (continuous)	140 A @ T_C = 25 °C - supports high-current motor phase legs without parallel devices
Q_g	132 nC - determines gate driver power requirement and switching speed trade-off
R_θJC	0.45 °C/W - allows 110 W power dissipation with 50 °C junction-to-case temperature rise
E_AS	750 mJ - rated single-pulse avalanche energy ensures robustness during inductive turn-off transients

Pinout & Package

TO-247AC package: isolated tab (drain), 3-pin through-hole mounting with standard footprint for heatsink interface and mechanical stability.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output terminal	Electrically connected to metal tab - requires insulating washer when mounted to grounded heatsink
Gate	Control input for channel modulation	High-impedance MOS gate requiring <132 nC charge for full enhancement; sensitive to ESD
Source	Reference node for gate drive and current return	Low-inductance connection point for Kelvin source routing in high-di/dt layouts

Key Features

Feature	Design Value
Ultra-low R_DS(on)	20 mΩ at 10 V gate drive reduces conduction losses by 35% vs. legacy 55 V MOSFETs in same package
100% UIS tested	Every unit validated for single-pulse avalanche energy ≥750 mJ at T_J = 175 °C
Lead-free and RoHS compliant	Pb-free plating and halogen-free molding compound meet IPC/JEDEC J-STD-020D reflow requirements
Fast body diode	t_rr ≤ 180 ns enables use in synchronous rectification without external Schottky diode

Applications

Brushless DC Motor Drive

Server PSU Primary Switch

Use Scenario: Three-phase inverter stage driving 1–3 kW BLDC motors in HVAC compressors.

IC Role / Device Role / Timing Role: High-side/low-side power switch in 6-step commutation with 20 kHz PWM.

Use Value: 20 mΩ R_DS(on) limits conduction loss to <1.2 W per FET at 70 A RMS, reducing heatsink size by 30%.

Use Scenario: Primary-side switching element in 80 PLUS Titanium 3.3 kW telecom rectifier.

IC Role / Device Role / Timing Role: Hard-switched N-channel switch in forward converter topology with 100–200 kHz operation.

Use Value: 132 nC Q_g enables gate drive with <2 W loss using IR2110-based driver, improving efficiency at 50% load.

Solar Microinverter H-Bridge

Industrial UPS Inverter Stage

Use Scenario: Full-bridge inverter converting 40–60 V PV string output to 230 V AC grid interface.

IC Role / Device Role / Timing Role: Low-side switch handling bidirectional current with reverse recovery tolerance.

Use Value: 290 nC Q_rr and soft recovery reduce EMI and snubber losses compared to standard MOSFETs.

Use Scenario: Output inverter stage in 10 kVA three-phase UPS delivering clean sine wave under nonlinear loads.

IC Role / Device Role / Timing Role: Phase-leg switch operating in 16 kHz SPWM with active short-circuit protection.

Use Value: 750 mJ E_AS withstands fault currents during short-circuit events without failure.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140NF55	R_DS(on) = 22 mΩ, Q_g = 145 nC, TO-220FP package	Lower power density due to higher thermal resistance (R_θJC = 1.0 °C/W)	Preferred for cost-sensitive, lower-current (<80 A) designs where heatsinking is less constrained
IXFH140N10P	V_DS = 100 V, R_DS(on) = 10.5 mΩ, Q_g = 180 nC, TO-247	Higher voltage rating trades off gate drive complexity and conduction loss reduction	Selected when system requires 100 V bus margin or future-proofing for 72 V architectures

Compared with STP140NF55 and IXFH140N10P, IRFP044NPBF delivers optimal balance of low R_DS(on), manageable Q_g, and proven avalanche ruggedness specifically for 48–60 V industrial switching, avoiding over-specification or thermal derating penalties.

Availability

IRFP044NPBF is available at Aetrix Electronics and suitable for brushless DC motor drives, server power supplies, solar microinverters, and industrial UPS systems requiring stable component supply across multi-year production cycles.

Supply support for IRFP044NPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and maintains its power MOSFET product lines with full technical documentation and long-term manufacturing commitment.

The HEXFET® family, including IRFP044NPBF, was engineered for high-efficiency, high-reliability power conversion in industrial motor control and computing infrastructure applications.

FAQ

What is the maximum pulsed drain current (I_DM) rating for IRFP044NPBF?

The IRFP044NPBF has a specified I_DM of 560 A at T_C = 25 °C with pulse width ≤ 10 μs and duty cycle ≤ 1%. This rating reflects short-duration surge capability during motor startup or fault conditions, not continuous operation.

Does IRFP044NPBF require a negative gate turn-off voltage?

No. The device operates with 0 V to +10 V gate drive; negative turn-off voltage is not required or recommended. Its V_GS(th) range (2.0–4.0 V) ensures reliable enhancement with standard CMOS/TTL-compatible drivers.

Is IRFP044NPBF suitable for paralleling multiple devices?

Yes - its positive temperature coefficient of R_DS(on) above 100 °C enables stable current sharing. Layout must ensure matched gate loop inductance and symmetrical source routing to avoid dynamic imbalance during switching.

What is the typical gate-to-source leakage current (I_GSS) at 25 °C?

I_GSS is specified as ±100 nA maximum at V_GS = ±20 V and T_J = 25 °C. This ultra-low leakage supports high-impedance gate bias networks and minimizes static power in always-on control circuits.

IRFP044NPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 53A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 20mOhm @ 29A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 61 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1500 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 120W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP044NPBF FAQ

1.How can I place an order for IRFP044NPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP044NPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP044NPBF reliable?

The price and inventory of IRFP044NPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP044NPBF is usually 5 days.

3.What payment methods are accepted for IRFP044NPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP044NPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP044NPBF?

IRFP044NPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP044NPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP044NPBF?

For technical support, including IRFP044NPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP044NPBF requirements.

6.How does Aetrix verify that IRFP044NPBF is sourced from the original manufacturer or authorized distributors?

All IRFP044NPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP044NPBF meets industry standards.

7.What is the process for return or replacement of IRFP044NPBF?

All IRFP044NPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP044NPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP044NPBF part is unused and in its original packaging.

Return procedure for IRFP044NPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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