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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP054N

Name: IRFP054N
Brand: Infineon Technologies
SKU: IRFP054N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP054N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP054N.pdf

Description:: MOSFET N-CH 55V 81A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:3,165

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Product details

Overview

IRFP054N from Infineon Technologies is a 55V, 81A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring R_DS(on) ≤ 12 mΩ at V_GS = 10 V, 175°C max junction temperature, and fully avalanche-rated operation. It serves as a high-current switching element in DC-DC converters, motor drives, and UPS systems requiring robust conduction and fast turn-on/turn-off.

For engineers reviewing the IRFP054N datasheet, IRFP054N pinout, IRFP054N application, or IRFP054N equivalent, key selection criteria include its 0.012 Ω on-resistance, 290 A pulsed drain current capability, 360 mJ single-pulse avalanche energy rating, and TO-247AC thermal performance with R_θJC = 0.90 °C/W.

Technical Context

This HEXFET device employs fifth-generation silicon process technology to minimize conduction loss while maintaining high dv/dt immunity (5.0 V/ns) and rugged unclamped inductive switching behavior. Its gate charge profile (Q_g = 130 nC, Q_gd = 33 nC) supports efficient hard-switching up to 100 kHz in synchronous rectification and half-bridge topologies.

The integrated body diode exhibits t_rr = 81–120 ns and Q_rr = 240–370 nC under 100 A/µs di/dt, enabling use in freewheeling paths where reverse recovery softness and speed are critical-such as in LLC resonant converters and high-frequency inverters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	55 V - Withstands 55 V drain-source blocking voltage before avalanche onset; suitable for 48 V bus systems with margin.
R_DS(on) max	0.012 Ω - Enables <1 W conduction loss at 81 A DC, reducing heatsink requirements in high-current switch nodes.
I_D @ T_C = 25°C	81 A - Continuous current rating at case temperature 25°C; derates linearly above 25°C per 1.1 W/°C thermal slope.
E_AS	360 mJ - Single-pulse avalanche energy rating confirms reliability during inductive load switching transients without external snubbers.
Q_g	130 nC - Total gate charge determines driver strength requirement; compatible with standard 1–2 A peak gate drivers.
t_r/t_f	66 ns / 46 ns - Fast rise/fall times support high-frequency PWM operation while limiting switching losses in SMPS designs.
R_θJC	0.90 °C/W - Low junction-to-case thermal resistance enables direct mounting to heatsinks for >100 W continuous dissipation.

Pinout & Package

TO-247AC package with isolated mounting hole, non-surface-mountable, designed for high-power through-hole PCB mounting and mechanical heatsink attachment using M3 or 6-32 screws (torque: 1.1 N·m).

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current-carrying terminal connected to die backside	Electrically tied to metal tab; must be electrically isolated from heatsink unless referenced to system ground.
Source (S)	Reference node for gate drive and current return path	Low-inductance source connection critical for stable gate control; LS = 13 nH impacts high-speed switching stability.
Gate (G)	Control electrode modulating channel conductivity	High-impedance input requiring low-impedance gate driver; threshold V_GS(th) = 2.0–4.0 V ensures TTL/CMOS compatibility.

Key Features

Feature	Design Value
Fully avalanche rated	Guarantees safe operation under unclamped inductive switching up to 360 mJ single-pulse energy without failure.
175°C maximum junction temperature	Enables operation in high-ambient environments (e.g., industrial motor drives) without derating below full current capability.
Dynamic dv/dt rating of 5.0 V/ns	Prevents false turn-on during high-speed voltage transients in bridge-leg configurations with shared source nodes.
Advanced fifth-generation HEXFET process	Delivers 12 mΩ R_DS(on) in TO-247AC - 20% lower than prior-gen equivalents at same voltage class and package.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; no lead contamination risk in reflow or wave soldering processes.

Applications

DC-DC Converters

Motor Drives

Use Scenario: High-efficiency 48 V input to 12 V output buck converter in telecom power shelves.

IC Role / Device Role / Timing Role: Primary high-side switching FET operating at 200 kHz with synchronous rectification.

Use Value: 0.012 Ω R_DS(on) reduces conduction loss by >30% vs. legacy 20 mΩ devices, improving full-load efficiency to >95%.

Use Scenario: Three-phase inverter stage for 1–3 kW BLDC motor control in HVAC compressors.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter leg with active freewheeling.

Use Value: 290 A pulsed current rating and 175°C T_J allow short-term overload handling during motor startup without thermal shutdown.

Uninterruptible Power Supplies

Industrial Welding Equipment

Use Scenario: Bidirectional DC link switch in online double-conversion UPS with battery backup.

IC Role / Device Role / Timing Role: Main inverter switch conducting 81 A continuous during mains failure mode.

Use Value: Fully avalanche-rated design eliminates need for external clamping circuits during grid fault transitions.

Use Scenario: Primary switching device in IGBT-gated resonant inverter for arc welding power supplies.

IC Role / Device Role / Timing Role: High-current, high-dv/dt switch controlling 50–100 kHz resonant tank current.

Use Value: 5.0 V/ns dv/dt immunity prevents spurious turn-on during rapid voltage reversal across transformer leakage inductance.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP80NF55-08	R_DS(on) = 8.5 mΩ (lower), V_BRDSS = 55 V, Q_g = 140 nC (higher), TO-220FP package	Limited to 80 A continuous; lower thermal mass and higher R_θJA restrict use in >60 W ambient-constrained designs	Prefer when board space is constrained and heatsinking is passive; avoid in forced-air or high-T_A environments.
IXTH80N50L2	V_BRDSS = 500 V (higher), R_DS(on) = 0.022 Ω (higher), 175°C rating, TO-247 package	Designed for 400 V DC bus systems; higher on-resistance increases conduction loss in 48 V applications	Select only when higher breakdown voltage is mandatory; not recommended for 55 V-class systems due to efficiency penalty.

Compared with STP80NF55-08 and IXTH80N50L2, the IRFP054N uniquely balances ultra-low R_DS(on), industry-standard 55 V rating, and TO-247AC thermal performance-making it optimal for high-current, medium-voltage industrial switching where both efficiency and ruggedness are required.

Availability

IRFP054N is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP054N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRFP054N belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability switching in industrial power conversion and motor control applications.

FAQ

What is the maximum continuous drain current for IRFP054N at 100°C case temperature?

The IRFP054N supports 57 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating from the 81 A rating at 25°C, governed by the 1.1 W/°C linear derating factor and R_θJC = 0.90 °C/W.

Can IRFP054N be used in synchronous rectification topologies?

Yes-the IRFP054N is suitable for synchronous rectification due to its low R_DS(on) (0.012 Ω), fast switching (t_r = 66 ns, t_f = 46 ns), and low Q_gd/Q_g ratio (33/130 nC). Its body diode t_rr = 81–120 ns allows controlled commutation when properly driven with adaptive gate timing.

Is the TO-247AC package electrically isolated between drain and mounting tab?

No-the TO-247AC package has the drain terminal electrically connected to the metal tab. The mounting hole is mechanically isolated but does not provide electrical isolation; therefore, an insulating washer and shoulder washer must be used when mounting to a grounded heatsink.

Does IRFP054N require gate resistors for reliable operation?

Yes-a series gate resistor (typically 3.3–10 Ω) is recommended to dampen ringing caused by gate loop inductance (L_S = 13 nH) and prevent oscillation during fast edge transitions. Values are selected based on desired dV/dt control and driver capability, with 3.6 Ω used in the official switching time test circuit.

IRFP054N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 81A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 12mOhm @ 43A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 130 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2900 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP054N FAQ

1.How can I place an order for IRFP054N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP054N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP054N reliable?

The price and inventory of IRFP054N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP054N is usually 5 days.

3.What payment methods are accepted for IRFP054N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP054N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP054N?

IRFP054N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP054N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP054N?

For technical support, including IRFP054N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP054N requirements.

6.How does Aetrix verify that IRFP054N is sourced from the original manufacturer or authorized distributors?

All IRFP054N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP054N meets industry standards.

7.What is the process for return or replacement of IRFP054N?

All IRFP054N units undergo pre-shipment inspection (PSI). If there is an issue with IRFP054N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP054N part is unused and in its original packaging.

Return procedure for IRFP054N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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