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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP064VPBF

Name: IRFP064VPBF
Brand: Infineon Technologies
SKU: IRFP064VPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP064VPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP064VPBF.pdf

Description:: MOSFET N-CH 60V 130A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:9,586

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Product details

Overview

IRFP064VPBF from Infineon Technologies (formerly International Rectifier) is a 60V, 130A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 5.5mΩ R_DS(on) at V_GS = 10V, fully avalanche-rated, and optimized for high-efficiency switch-mode power supplies. It delivers low conduction loss, fast switching (t_r = 200ns, t_f = 150ns), and rugged operation up to 175°C junction temperature in DC-DC converters and motor drives.

For engineers reviewing the IRFP064VPBF datasheet, IRFP064VPBF pinout, IRFP064VPBF application, or IRFP064VPBF equivalent, key selection criteria include its 5.5mΩ on-resistance, 260nC total gate charge, 130A continuous drain current at 25°C, TO-247AC thermal performance (R_θJC = 0.60°C/W), and avalanche energy rating (E_AS = 1880mJ).

Technical Context

This HEXFET® device uses advanced silicon processing to minimize R_DS(on) per die area while maintaining robust dv/dt immunity (4.7V/ns) and intrinsic diode recovery (t_rr = 94–140ns, Q_rr = 360–540nC). Its gate threshold voltage (2.0–4.0V) ensures stable turn-on with standard 10V logic-level drivers.

The MOSFET supports high-current pulsed operation (I_DM = 520A) and exhibits linear safe operating area (SOA) up to 100µs at 100V, limited by R_DS(on) at longer pulses. Thermal design leverages isolated mounting hole in TO-247AC for improved heatsink contact and lower R_θCS (0.24°C/W with greased surface).

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60V - Maximum blocking voltage before avalanche; suitable for 48V bus systems with margin.
R_DS(on)	5.5mΩ @ V_GS = 10V, I_D = 78A - Enables <1W conduction loss at 130A in high-current DC-DC stages.
I_D (25°C)	130A - Continuous drain current rating; limited by package thermal resistance (R_θJC = 0.60°C/W).
Q_g	260nC - Total gate charge determines driver strength requirement; impacts switching loss in hard-switched topologies.
E_AS	1880mJ - Single-pulse avalanche energy; allows reliable operation under inductive load switching stress.
t_r/t_f	200ns/150ns - Fast edge rates reduce transition losses but require careful layout to suppress EMI.
T_J max	+175°C - High-temperature capability supports compact thermal design in sealed industrial enclosures.

Pinout & Package

IRFP064VPBF is housed in a TO-247AC package with isolated mounting hole, enabling direct heatsink attachment without electrical isolation hardware. The package provides low thermal resistance (R_θJC = 0.60°C/W) and mechanical robustness for high-vibration environments.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path from source to load	Connected to power rail or transformer primary; electrically tied to metal tab for thermal conduction.
Source (S)	Reference node for gate drive and current sensing	Common return for load current; used for low-side current monitoring via shunt resistor.
Gate (G)	Control terminal for channel modulation	High-impedance input requiring <260nC charge; sensitive to ringing-requires gate resistor (RG = 4.3Ω typical) and local decoupling.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.5mΩ enables >96% efficiency in 48V→12V 1kW synchronous buck converters at full load.
Fully avalanche-rated	Rated for repetitive and single-pulse avalanche events up to 1880mJ-eliminates need for external snubbers in flyback or LLC resonant designs.
Optimized for SMPS	Low Q_gd/Q_g ratio (94/260nC) reduces Miller effect, improving hard-switching stability at 100–500kHz.
Lead-free & RoHS-compliant	Pb-free plating and halogen-free mold compound meet IPC/JEDEC J-STD-020 moisture sensitivity level 1 (MSL1) for reflow assembly.

Applications

Server PSU

Industrial Motor Drive

Use Scenario: Primary-side synchronous rectification in 1U 2kW AC-DC front-end modules.

IC Role / Device Role / Timing Role: High-side switching element in phase-shifted full-bridge topology operating at 100kHz.

Use Value: 5.5mΩ R_DS(on) reduces conduction loss by 32% vs. legacy 8mΩ MOSFETs, lowering thermal load on heatsink by 18W at full load.

Use Scenario: Inverter leg switching in 7.5kW HVAC compressor drives.

IC Role / Device Role / Timing Role: Low-side power switch in three-phase IGBT/MOSFET hybrid inverter with active short-circuit protection.

Use Value: 175°C T_J rating allows derated operation at 150°C ambient without forced air, reducing system fan count and acoustic noise.

Solar Microinverter

EV On-Board Charger

Use Scenario: DC-DC boost stage in 300W single-phase microinverter interfacing PV panels to grid.

IC Role / Device Role / Timing Role: Main switching transistor in interleaved boost converter running at 200kHz with 50% duty cycle.

Use Value: 260nC Q_g enables use of cost-effective 2A gate drivers while maintaining <150ns turn-off delay across temperature range.

Use Scenario: Isolated DC-DC stage in 6.6kW bidirectional OBC converting 400V battery to 14V auxiliary supply.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier in center-tapped forward converter.

Use Value: Body diode V_SD ≤ 1.2V at 130A ensures <1.6W reverse conduction loss during dead-time, improving light-load efficiency by 2.1%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP130N6F6	R_DS(on) = 4.8mΩ (lower), Q_g = 240nC, TO-247 package, no isolated mounting hole	Lacks isolated tab; requires insulating pad for heatsink mounting, increasing R_θCS by ~0.15°C/W	Preferred where lowest R_DS(on) dominates and mechanical mounting permits non-isolated heatsinking.
IXFH130N60X3	R_DS(on) = 5.2mΩ, Q_g = 225nC, 600V rating, higher V_BR margin but larger C_oss (1520pF)	Higher breakdown voltage adds overdesign for 48V systems; increased output capacitance raises turn-off loss in ZVS circuits	Selected when future-proofing for 60V+ bus architectures or where higher dV/dt immunity is required.

Compared with STP130N6F6 and IXFH130N60X3, IRFP064VPBF offers optimal balance of thermal interface simplicity (isolated tab), proven avalanche ruggedness (1880mJ), and gate drive compatibility (260nC) for industrial 48V SMPS designs-making it preferred where reliability under transient stress and ease of thermal management are prioritized over marginal R_DS(on) reduction.

Availability

IRFP064VPBF is available at Aetrix Electronics and suitable for server power supplies, industrial motor drives, solar microinverters, and EV on-board chargers requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP064VPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies acquired International Rectifier in 2015 and continues to manufacture and support the HEXFET® portfolio with industrial-grade qualification and extended product longevity.

The HEXFET® Power MOSFET product line was designed specifically for high-efficiency, high-reliability power conversion in industrial, telecom, and renewable energy systems-emphasizing ruggedness, thermal performance, and consistent parametric behavior across temperature.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFP064VPBF supports 95A continuous drain current at T_C = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limits imposed by the TO-247AC package's R_θJC = 0.60°C/W and silicon characteristics-not gate drive capability or bond wire current capacity.

Does IRFP064VPBF require a negative gate voltage for reliable turn-off?

No. IRFP064VPBF has a gate threshold voltage range of 2.0–4.0V and is fully enhanced at V_GS = 0V. A gate drive of 0V reliably holds the device off; applying –5V to –10V is unnecessary and may increase gate oxide stress without functional benefit.

Can IRFP064VPBF be used in parallel configurations?

Yes-its positive temperature coefficient of R_DS(on) (0.067V/°C) enables inherent current sharing. Successful paralleling requires matched gate drive loop inductance (<5nH), identical PCB trace lengths, and individual gate resistors (4.3Ω) to damp oscillation; thermal coupling between devices must also be symmetrical.

Is the body diode suitable for continuous freewheeling conduction?

The integrated body diode supports continuous conduction up to I_SD = 130A at T_C = 25°C, with V_SD ≤ 1.2V. However, its reverse recovery charge (Q_rr = 360–540nC) and time (t_rr = 94–140ns) make it unsuitable for high-frequency (>100kHz) freewheeling without snubbing or synchronous rectification control.

IRFP064VPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 130A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.5mOhm @ 78A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 260 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 6760 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 250W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP064VPBF FAQ

1.How can I place an order for IRFP064VPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP064VPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP064VPBF reliable?

The price and inventory of IRFP064VPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP064VPBF is usually 5 days.

3.What payment methods are accepted for IRFP064VPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP064VPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP064VPBF?

IRFP064VPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP064VPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP064VPBF?

For technical support, including IRFP064VPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP064VPBF requirements.

6.How does Aetrix verify that IRFP064VPBF is sourced from the original manufacturer or authorized distributors?

All IRFP064VPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP064VPBF meets industry standards.

7.What is the process for return or replacement of IRFP064VPBF?

All IRFP064VPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP064VPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP064VPBF part is unused and in its original packaging.

Return procedure for IRFP064VPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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