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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP1405

Name: IRFP1405
Brand: Infineon Technologies
SKU: IRFP1405
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP1405

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP1405.pdf

Description:: MOSFET N-CH 55V 95A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:7,346

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Product details

Overview

IRFP1405 from Infineon Technologies is a 55V, 95A (continuous, package-limited), N-channel enhancement-mode Power MOSFET in TO-247AC package with 4.2 mΩ typical R_DS(on) at V_GS = 10 V, 175°C maximum junction temperature, and rated for repetitive avalanche operation up to T_jmax. It serves as a high-current, low-loss main switch in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRFP1405 datasheet, IRFP1405 pinout, IRFP1405 application, or IRFP1405 equivalent, key selection criteria include its 5.3 mΩ max R_DS(on), 640 A pulsed drain current capability, 1060 mJ tested single-pulse avalanche energy, thermal resistance of 0.49°C/W (junction-to-case), and fast switching performance with 12 ns turn-on delay and 150 ns fall time.

Technical Context

This device employs Infineon's HEXFET process to achieve ultra-low conduction loss while maintaining robust unclamped inductive switching capability. Its gate threshold voltage (2.0–4.0 V) enables compatibility with standard 10 V gate drivers, and its 120–180 nC total gate charge supports efficient high-frequency PWM control in hard-switched topologies.

The integrated body diode exhibits 1.3 V forward voltage at 95 A and 70–110 ns reverse recovery time, enabling synchronous rectification and freewheeling in buck and half-bridge configurations. Repetitive avalanche is thermally validated per Fig. 12a/12b and Fig. 15–16, with energy limits dependent on pulse width and junction temperature rise.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	55 V - Maximum blocking voltage before avalanche onset; defines DC bus rating in 48 V systems.
R_DS(on) max	5.3 mΩ - Conduction loss of ≤ 48 W at 95 A; enables >98% efficiency in high-current power stages.
I_D continuous	95 A - Package-limited current at T_C = 25°C; requires heatsink with ≤ 0.73°C/W total thermal resistance.
E_AS tested	1060 mJ - Single-pulse avalanche energy verified 100% in production; supports robustness against inductive kickback.
Q_g max	180 nC - Total gate charge determining driver strength requirement; ~2.6 Ω gate resistor needed for 100 kHz switching.
t_f	150 ns - Fall time at I_D = 95 A, RG = 2.6 Ω; sets minimum off-time and EMI profile in hard-switched converters.
R_θJC	0.49°C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates without interface material degradation.

Pinout & Package

IRFP1405 is housed in a TO-247AC package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulating hardware when mounted to grounded heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path output / Heat sink interface	Electrically tied to metal tab; carries full load current and dissipates heat directly to heatsink.
Gate	Control input for channel modulation	High-impedance MOS gate requiring <200 nA leakage drive; sensitive to ESD and ringing above ±20 V.
Source	Reference node for gate drive and current return	Low-inductance source connection critical for stable switching; internal LS = 13 nH impacts gate-source loop stability.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	4.2 mΩ typ. at 10 V drive reduces conduction loss by >30% vs. legacy 55 V MOSFETs in same package.
175°C operating temperature	Enables sustained operation in sealed enclosures or high-ambient environments without derating below 100°C case temp.
Repetitive avalanche rated	Validated per Fig. 12a/12b and Fig. 15–16; allows safe operation under unclamped inductive switching without external snubbers.
Fast switching with low Q_gd/Q_gs	53 nC gate-drain charge and 30 nC gate-source charge minimize Miller plateau duration and improve dV/dt immunity.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; Pb-free plating ensures solderability and long-term reliability in reflow processes.

Applications

Motor Drive Inverter

Server PSU Primary Switch

Use Scenario: Three-phase BLDC motor control in industrial automation with 48 V DC bus and 60 A peak phase current.

IC Role / Device Role / Timing Role: High-side and low-side main switching element in 6-pack inverter bridge; switched at 20 kHz with dead-time control.

Use Value: 5.3 mΩ R_DS(on) limits conduction loss to <30 W per device; 175°C rating avoids thermal shutdown during burst-load acceleration.

Use Scenario: Primary-side synchronous rectifier in 1 kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: Main power switch in half-bridge configuration; driven by transformer-isolated gate driver with 100 ns propagation delay.

Use Value: 180 nC Q_g enables clean 300 kHz switching; 1060 mJ E_AS absorbs leakage inductance spikes without clamping circuits.

UPS Output Stage

Solar Microinverter DC-DC Boost

Use Scenario: Bidirectional 48 V/200 V DC-AC inverter stage in line-interactive UPS with 1.5 kVA rating.

IC Role / Device Role / Timing Role: Low-side switch in full-bridge output stage; operated in hard-switched PWM mode with 10 kHz fundamental frequency.

Use Value: 640 A pulsed drain current handles 3× overload surges; 0.49°C/W R_θJC supports forced-air cooling at 50°C ambient.

Use Scenario: DC-DC boost switch in 300 W solar microinverter interfacing 36–60 V PV string to 400 V DC link.

IC Role / Device Role / Timing Role: High-efficiency unidirectional switch in interleaved boost converter; gated at 100 kHz with zero-voltage switching assist.

Use Value: 1310 pF C_oss at 25 V enables low capacitive turn-on loss; body diode trr < 110 ns minimizes reverse recovery loss during ZVS transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP90NF55-12	55 V, 90 A, 5.5 mΩ R_DS(on), TO-220FP package, lower I_DM (480 A)	Limited to lower-power (<800 W) designs due to higher R_DS(on) and smaller package thermal capacity	Preferred where board space constraints preclude TO-247 and peak current stays below 480 A
IXTH120N55L2	55 V, 120 A, 4.0 mΩ R_DS(on), TO-247 package, higher Q_g (220 nC), no avalanche rating	Requires stronger gate driver; unsuitable for unclamped inductive loads without external protection	Chosen when lowest conduction loss is critical and avalanche stress is absent or externally managed

Compared with STP90NF55-12 and IXTH120N55L2, IRFP1405 delivers superior avalanche ruggedness and thermal margin in TO-247 form factor, balancing conduction loss, switching speed, and fault tolerance for industrial-grade 1–2 kW power stages.

Availability

IRFP1405 is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and solar microinverters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP1405 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFP1405 belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding industrial and renewable energy applications.

FAQ

Is IRFP1405 suitable for synchronous rectification?

Yes - its body diode has 1.3 V forward voltage at 95 A and 70–110 ns reverse recovery time, making it viable for low-frequency synchronous rectification in DC-DC converters. However, dedicated synchronous rectifier MOSFETs offer lower Q_rr and optimized gate charge for high-frequency operation.

What is the maximum recommended gate resistor value for 100 kHz switching?

A 2.6 Ω gate resistor is specified in the datasheet for 100 kHz operation with 95 A drain current. Using >5 Ω increases switching time and losses; <1.5 Ω risks gate driver overstress and ringing due to 13 nH internal source inductance.

Can IRFP1405 be used without a heatsink in low-duty-cycle applications?

No - even at 10% duty cycle, its 0.49°C/W R_θJC and 310 W P_D rating require active or passive heatsinking. At 95 A and 5.3 mΩ, conduction loss alone exceeds 48 W, raising junction temperature >100°C above ambient without thermal management.

Does IRFP1405 have a built-in ESD protection diode on the gate?

No - the gate oxide is unprotected against ESD per standard HEXFET design. Gate-source voltage must remain within ±20 V, and handling requires grounded wrist straps, anti-static mats, and series gate resistors (≥10 Ω) to limit transient current during PCB assembly and operation.

IRFP1405 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 95A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.3mOhm @ 95A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 180 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5600 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 310W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP1405 FAQ

1.How can I place an order for IRFP1405 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP1405 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP1405 reliable?

The price and inventory of IRFP1405 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP1405 is usually 5 days.

3.What payment methods are accepted for IRFP1405?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP1405 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP1405?

IRFP1405 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP1405 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP1405?

For technical support, including IRFP1405 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP1405 requirements.

6.How does Aetrix verify that IRFP1405 is sourced from the original manufacturer or authorized distributors?

All IRFP1405 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP1405 meets industry standards.

7.What is the process for return or replacement of IRFP1405?

All IRFP1405 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP1405, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP1405 part is unused and in its original packaging.

Return procedure for IRFP1405:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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