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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP140N

Name: IRFP140N
Brand: Infineon Technologies
SKU: IRFP140N
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP140N

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP140N.pdf

Description:: MOSFET N-CH 100V 33A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP140N from Infineon Technologies is a 100V, 33A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.052Ω R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and full unclamped inductive avalanche rating (E_AS = 300 mJ). It serves as a high-efficiency main switch in DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFP140N datasheet, IRFP140N pinout, IRFP140N application, or IRFP140N equivalent, key selection criteria include its 5.0 V/ns di/dt-rated body diode recovery, 94 nC total gate charge for PWM switching optimization, and thermal resistance R_θJC = 1.1°C/W enabling high-power conduction with forced-air heatsinking.

Technical Context

This MOSFET employs Infineon's fifth-generation HEXFET process to minimize on-resistance per die area while maintaining ruggedness against repetitive avalanche stress (I_AR = 16 A, E_AR = 14 mJ). Its gate threshold voltage (2.0–4.0 V) ensures stable turn-on under wide supply tolerances.

The device integrates a fast-recovery body diode (t_rr = 170–250 ns, Q_rr = 1.1–1.6 µC) with controlled dv/dt capability (5.0 V/ns), making it suitable for hard-switched topologies where diode reverse recovery induces voltage overshoot.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	100 V - Withstands up to 100 V drain-source blocking voltage before avalanche onset.
R_DS(on) max	0.052 Ω - Enables ≤1.3 W conduction loss at 16 A DC current with 10 V gate drive.
I_D @ T_C = 25°C	33 A - Continuous drain current rating under ideal heatsink conditions (T_C = 25°C).
E_AS	300 mJ - Single-pulse avalanche energy tolerance supports robustness during inductive load switching faults.
Q_g	94 nC - Total gate charge determines required driver peak current and switching transition time in PWM circuits.
t_r/t_f	39 ns / 33 ns - Fast rise/fall times reduce switching losses in high-frequency SMPS designs (e.g., >100 kHz).
R_θJC	1.1 °C/W - Junction-to-case thermal resistance enables direct mounting to heatsinks for high-power operation.

Pinout & Package

TO-247AC package with isolated mounting hole, optimized for high-power commercial-industrial applications requiring mechanical stability and low thermal impedance. Not suitable for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
G	Gate	Control terminal accepting 10 V logic-level drive; requires ≥±20 V absolute rating for safe operation.
D	Drain	Main high-side power path connection; electrically tied to metal tab for low-inductance heat transfer.
S	Source	Power return node and reference for gate drive; internal source inductance (L_S = 13 nH) affects switching waveform fidelity.

Key Features

Feature	Design Value
Fully avalanche rated	Withstands single-pulse E_AS = 300 mJ and repetitive E_AR = 14 mJ without degradation-critical for motor drive fault tolerance.
Dynamic dv/dt rating	5.0 V/ns peak diode recovery dv/dt prevents false turn-on during high-speed commutation in bridge configurations.
175°C operating temperature	Enables reliable operation in sealed enclosures or high-ambient environments (e.g., industrial inverters, UPS systems).
Fast switching	Combined t_r + t_f < 75 ns reduces switching losses in 100–500 kHz DC-DC converters.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; Pb-free plating on TO-247AC leads and die attach.

Applications

Motor Drive Half-Bridge

DC-DC Boost Converter

Use Scenario: High-current H-bridge for 24–48 V BLDC motor control in automated machinery.

IC Role / Device Role / Timing Role: Main high-side and low-side switching element handling bidirectional 33 A continuous current.

Use Value: Low R_DS(on) minimizes I²R losses during PWM conduction; avalanche rating absorbs inductive kickback during freewheeling.

Use Scenario: 400 W isolated boost stage in telecom power supplies stepping 48 V input to 380 V bus.

IC Role / Device Role / Timing Role: Primary switch operating at 200 kHz with 50% duty cycle and 16 A peak current.

Use Value: 94 nC Q_g allows efficient gate driving with low-power IC drivers; fast t_r/t_f reduces transition losses.

Uninterruptible Power Supply (UPS)

Industrial Inverter Output Stage

Use Scenario: Bidirectional buck-boost converter in online double-conversion UPS managing battery charge/discharge cycles.

IC Role / Device Role / Timing Role: Synchronous rectifier and active switch in 1–3 kVA output stage.

Use Value: 175°C T_J rating supports sustained operation under overload; body diode t_rr < 250 ns limits reverse recovery spikes.

Use Scenario: Three-phase 220 V AC output stage for HVAC variable-frequency drives.

IC Role / Device Role / Timing Role: Final-stage power switch in IGBT/MOSFET hybrid inverter leg.

Use Value: TO-247AC mechanical stability withstands vibration; R_θJC = 1.1°C/W enables compact heatsink design at 23 A continuous (T_C = 100°C).

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP14NK100Z	Higher R_DS(on) (0.075 Ω), lower I_D (14 A), Zener-protected gate	Lower power density; suited for lower-current, higher-voltage flyback snubbers	Select when gate robustness against overvoltage transients outweighs conduction loss priority.
IXTH16N100L	Lower Q_g (65 nC), same V_BRDSS (100 V), higher R_DS(on) (0.085 Ω)	Better high-frequency efficiency but higher conduction loss at >10 A DC	Prefer for >300 kHz resonant converters where switching loss dominates.

Compared with STP14NK100Z and IXTH16N100L, the IRFP140N delivers optimal balance of low R_DS(on), high current capability, and proven avalanche ruggedness-making it preferred for medium-frequency, high-current industrial switching where both conduction and transient reliability matter.

Availability

IRFP140N is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply across multi-year production cycles.

Supply support for IRFP140N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

The IRFP140N belongs to Infineon's HEXFET® power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, power conversion, and renewable energy systems.

FAQ

What is the maximum gate-to-source voltage rating for IRFP140N?

The IRFP140N has a maximum gate-to-source voltage rating of ±20 V. Exceeding this limit risks permanent gate oxide damage. Designers must ensure gate drive circuits include clamping (e.g., Zener diodes) or rail-limited supplies, especially in noisy industrial environments where ringing or coupling may induce transient overvoltage.

Can IRFP140N be used in synchronous rectification applications?

Yes-the IRFP140N's low R_DS(on) (0.052 Ω) and fast body diode (t_rr = 170–250 ns) support synchronous rectification in LLC and phase-shifted full-bridge topologies. However, its 94 nC Q_g demands careful gate driver sizing to avoid shoot-through during dead-time transitions.

Is IRFP140N suitable for surface-mount assembly?

No-the TO-247AC package is explicitly not recommended for surface-mount applications due to mechanical instability, thermal stress risk during reflow, and lack of solder pad compatibility. It requires through-hole mounting with a mechanically secured heatsink and torque-controlled screw (1.1 N·m).

How does the 175°C junction temperature rating impact thermal design?

The 175°C T_J(max) allows operation in ambient temperatures up to 85°C with appropriate heatsinking (R_θJA ≤ 40°C/W). Designers must use R_θJC = 1.1°C/W and case temperature monitoring to avoid exceeding 175°C under worst-case load and airflow conditions.

IRFP140N Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 33A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 52mOhm @ 16A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 94 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP140N FAQ

1.How can I place an order for IRFP140N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP140N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP140N reliable?

The price and inventory of IRFP140N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP140N is usually 5 days.

3.What payment methods are accepted for IRFP140N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP140N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP140N?

IRFP140N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP140N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP140N?

For technical support, including IRFP140N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP140N requirements.

6.How does Aetrix verify that IRFP140N is sourced from the original manufacturer or authorized distributors?

All IRFP140N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP140N meets industry standards.

7.What is the process for return or replacement of IRFP140N?

All IRFP140N units undergo pre-shipment inspection (PSI). If there is an issue with IRFP140N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP140N part is unused and in its original packaging.

Return procedure for IRFP140N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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