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Infineon Technologies IRFP150N

Part No.:
IRFP150N
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIRFP150N.pdf
Description:
MOSFET N-CH 100V 42A TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:4,774

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Product details

Overview

IRFP150N from Infineon Technologies (formerly International Rectifier) is a 100V, 42A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.036Ω RDS(on) at VGS = 10V, 175°C maximum junction temperature, and full unclamped avalanche rating. It delivers high-efficiency switching in DC-DC converters, motor drives, and UPS systems where robustness and thermal stability are critical.

For engineers reviewing the IRFP150N datasheet, IRFP150N pinout, IRFP150N application, or IRFP150N equivalent, key selection criteria include its 140A pulsed drain current capability, 110nC total gate charge, 5.0V/ns peak diode recovery dv/dt rating, and isolated mounting hole enabling reliable heatsinking in high-power industrial designs.

Technical Context

This fifth-generation HEXFET uses advanced silicon processing to minimize conduction loss while maintaining fast switching (tr = 56ns, tf = 40ns) and rugged transient performance. Its body diode exhibits 180–270ns reverse recovery time and 1.2–1.8µC Qrr, supporting hard-switched topologies with controlled commutation stress.

The device integrates low-inductance internal layout (LD = 5.0nH, LS = 5.0nH) and supports gate drive voltages up to ±20V. Its 0.95°C/W junction-to-case thermal resistance enables 160W continuous dissipation at TC = 25°C, with linear derating to zero at 175°C case temperature.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS100V - Withstands 100V drain-source blocking voltage before breakdown, suitable for 48V bus and 100V DC-link applications.
RDS(on)0.036Ω - Enables ≤1.7W conduction loss at 42A continuous drain current, reducing thermal load in high-current switches.
ID @ 25°C42A - Supports high steady-state current in power supplies and motor phase legs without forced air cooling.
EAS420mJ - Fully rated for single-pulse inductive energy absorption, eliminating need for external snubbers in relay or solenoid drive circuits.
Qg110nC - Determines gate driver strength requirement; necessitates ≥2A peak gate current for 100ns turn-on in 100kHz PWM designs.
dv/dt Rating5.0V/ns - Specifies maximum rate of voltage rise across drain-source during diode recovery, critical for EMI control in bridge configurations.
TJ Max175°C - Allows operation in sealed enclosures or high-ambient environments without derating below rated current.

Pinout & Package

IRFP150N is housed in a TO-247AC package with isolated mounting hole, enabling direct mechanical attachment to heatsinks without electrical isolation hardware. The package provides low thermal resistance (RθJC = 0.95°C/W) and high power handling in commercial-industrial applications.

Pin/TerminalCircuit RoleDesign Meaning
1 (Gate)Control electrodeReceives 10V logic-level gate drive to fully enhance channel; requires 110nC charge for full turn-on.
2 (Drain)Main current output terminalConnected to high-side switch node or DC-link; electrically tied to metal tab for thermal conduction.
3 (Source)Main current return pathServes as reference for gate drive and current sensing; internal source inductance (5.0nH) affects switching waveform fidelity.

Key Features

FeatureDesign Value
Fifth-generation HEXFET processDelivers 0.036Ω RDS(on) in TO-247AC, achieving 22% lower on-resistance than prior generation at same die size.
Full avalanche ratingGuarantees 420mJ single-pulse energy survival without degradation, enabling use in unclamped inductive loads like solenoids and relays.
Isolated mounting holeEliminates need for insulating washers when mounting to grounded heatsinks, reducing thermal interface resistance by ~0.2°C/W.
175°C junction ratingSupports operation in automotive under-hood or industrial control cabinets where ambient exceeds 85°C.

Applications

DC-DC Converter Primary SwitchBrushless DC Motor Phase Leg

Use Scenario: High-efficiency 48V-to-12V isolated forward converter operating at 100kHz.

IC Role / Device Role / Timing Role: High-side primary switch conducting 42A peak current with minimal conduction loss.

Use Value: 0.036Ω RDS(on) limits I²R loss to 1.7W at full load, enabling natural convection cooling instead of fan-assisted heatsinking.

Use Scenario: 3-phase BLDC inverter driving 1.5kW industrial pump motor.

IC Role / Device Role / Timing Role: Low-side switching element in each half-bridge leg, handling 30A continuous current at 100°C case temperature.

Use Value: 140A pulsed drain current rating accommodates motor startup surges without SOA violation or thermal runaway.

Uninterruptible Power Supply InverterSolenoid/Relay Driver

Use Scenario: 1kVA online UPS with 200V DC-link and 60Hz H-bridge output stage.

IC Role / Device Role / Timing Role: Output stage MOSFET switching bidirectionally with body diode conduction during dead-time.

Use Value: 180–270ns reverse recovery time and 1.2–1.8µC Qrr minimize cross-conduction losses and EMI during commutation.

Use Scenario: 24V/5A industrial solenoid actuator with inductive kick suppression.

IC Role / Device Role / Timing Role: Unclamped inductive switch absorbing stored energy via avalanche breakdown.

Use Value: 420mJ single-pulse avalanche energy rating allows repeated solenoid cycling without external clamping diodes or TVS devices.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP14NK100Z1000V VDSS, 14A ID, 0.75Ω RDS(on), TO-220 packageHigher voltage rating but lower current and higher on-resistance; unsuitable for 42A continuous conduction.Select only if system requires >600V blocking and space constraints prohibit TO-247 mounting.
IXTH30N50L500V VDSS, 30A ID, 0.18Ω RDS(on), TO-247 packageLower voltage rating and higher on-resistance; lacks full avalanche rating per datasheet.Acceptable only in 400V-class systems where 42A current is not required and avalanche robustness is secondary.

Compared with STP14NK100Z and IXTH30N50L, IRFP150N uniquely balances 100V blocking, 42A current, 0.036Ω on-resistance, and guaranteed 420mJ avalanche energy-making it irreplaceable in high-current, thermally constrained 48V industrial power stages.

Availability

IRFP150N is available at Aetrix Electronics and suitable for DC-DC converters, brushless motor drives, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP150N includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, sensor, and automotive ICs with emphasis on energy efficiency and reliability.

The IRFP150N belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered specifically for high-current, high-reliability industrial switching applications where thermal robustness and avalanche survivability are mandatory.

FAQ

What is the maximum gate-to-source voltage for safe operation?

The absolute maximum VGS is ±20V. Exceeding this risks permanent gate oxide damage. For reliable operation, gate drive should be limited to +10V to +15V for full enhancement and –5V to –10V for fast turn-off, avoiding Miller-induced false turn-on in high-dv/dt environments.

Can IRFP150N be used in synchronous rectification applications?

No-it is not optimized for synchronous rectification. Its body diode has relatively high VSD (1.3V) and slow reverse recovery (180–270ns), resulting in higher conduction and switching losses compared to dedicated SR MOSFETs with low Qrr and enhanced diode softness.

Does IRFP150N require a gate resistor for stability?

Yes-a series gate resistor (typically 3.6Ω to 22Ω) is required to dampen ringing caused by gate-drain capacitance (Crss = 230pF) interacting with PCB trace inductance. Without it, overshoot and oscillation can exceed VGS ratings and cause erratic switching behavior.

How does the TO-247AC package differ from standard TO-247?

TO-247AC features an electrically isolated mounting hole, unlike standard TO-247 where the tab is internally connected to the drain. This eliminates need for mica washers or silicone pads when mounting to grounded heatsinks, reducing thermal resistance by up to 0.25°C/W and simplifying mechanical assembly.

IRFP150N Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-247-3
Packaging:
Bag
Product Status:
Obsolete
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
100 V
Current - Continuous Drain (Id) @ 25°C:
42A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
36mOhm @ 23A, 10V
Vgs(th) (Max) @ Id:
4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
110 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
1900 pF @ 25 V
FET Feature:
-
Power Dissipation (Max):
160W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRFP150N FAQ

1.How can I place an order for IRFP150N through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP150N on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP150N reliable?

The price and inventory of IRFP150N are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP150N is usually 5 days.

3.What payment methods are accepted for IRFP150N?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP150N transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP150N?

IRFP150N orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP150N order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP150N?

For technical support, including IRFP150N datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP150N requirements.

6.How does Aetrix verify that IRFP150N is sourced from the original manufacturer or authorized distributors?

All IRFP150N products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP150N meets industry standards.

7.What is the process for return or replacement of IRFP150N?

All IRFP150N units undergo pre-shipment inspection (PSI). If there is an issue with IRFP150N, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP150N part is unused and in its original packaging.

Return procedure for IRFP150N:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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