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Infineon Technologies IRFP2907ZPBF
- Part No.:
- IRFP2907ZPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-247-3
- Datasheet:
-
IRFP2907ZPBF.pdf
- Description:
- MOSFET N-CH 75V 90A TO247AC
- Quantity:
- Payment:
- Shipping:
Inventory:1
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Product details
Overview
IRFP2907ZPBF from Infineon Technologies (formerly International Rectifier) is a 75V, 90A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 4.5 mΩ RDS(on), 175°C junction rating, and 680A pulsed drain current. It delivers ultra-low conduction loss and robust repetitive avalanche capability for high-efficiency DC-DC converters and motor drive half-bridges.
For engineers reviewing the IRFP2907ZPBF datasheet, IRFP2907ZPBF pinout, IRFP2907ZPBF application, or IRFP2907ZPBF equivalent, key selection criteria include its 3.5–4.5 mΩ on-resistance at VGS = 10 V, 270 nC total gate charge, 1020 pF effective output capacitance, and 520 mJ single-pulse avalanche energy rating.
Technical Context
This HEXFET® device uses advanced silicon processing to minimize RDS(on) per die area while maintaining ruggedness. Its 175°C maximum junction temperature enables operation in thermally constrained industrial inverters and UPS systems without derating below 100°C case temperature.
The MOSFET supports fast switching with 19 ns turn-on delay, 140 ns rise time, and 97 ns turn-off delay under standard test conditions (VDD = 38 V, ID = 90 A, RG = 2.5 Ω), and integrates a body diode with 41–61 ns reverse recovery time and 59–89 nC Qrr.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 75 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with 50% safety margin |
| RDS(on) | 3.5–4.5 mΩ @ VGS = 10 V - Enables ≤4.05 W conduction loss at 90 A continuous drain current |
| ID (25°C) | 90 A - Continuous current rating limited by package thermal resistance (0.49 °C/W) |
| EAS | 520 mJ - Single-pulse avalanche energy tested 100%; supports unclamped inductive switching in motor drives |
| Qg | 180–270 nC - Gate drive power requirement dictates minimum driver peak current ≥2.7 A for 100 ns switching |
| Coss(eff) | 1020 pF - Effective output capacitance determines hard-switching loss and resonant behavior in LLC topologies |
| TJ(max) | 175°C - Allows sustained operation in sealed enclosures or high-ambient environments up to 100°C case temperature |
Pinout & Package
TO-247AC package with isolated tab (drain-connected), standard three-terminal configuration: Drain (tab and lead 2), Source (lead 1), Gate (lead 3). Thermal path optimized via direct metal-to-case interface.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Lead 1 (Source) | Source terminal | Low-side reference node; connects to PCB ground plane or source return path with minimal inductance |
| Lead 2 (Drain) | Drain terminal | High-current power output node; electrically and thermally connected to metal tab for heatsink mounting |
| Lead 3 (Gate) | Control input | High-impedance MOS gate requiring <200 nA leakage control; sensitive to ESD and ringing |
Key Features
| Feature | Design Value |
|---|---|
| Ultra Low RDS(on) | 3.5 mΩ typ. at 10 V gate drive reduces conduction losses by >30% vs. legacy 75 V MOSFETs in 48 V telecom rectifiers |
| 175°C Junction Rating | Enables full 90 A current delivery at 100°C case temperature without derating-critical for fanless industrial HMIs |
| Repetitive Avalanche Capability | Rated for repeated unclamped inductive switching up to TJmax; eliminates need for external snubbers in BLDC gate drivers |
| Fast Switching Speed | 19 ns td(on), 140 ns tr, 97 ns td(off) support >200 kHz PWM in high-density server VRMs |
Applications
| Motor Drive Half-Bridge | Telecom DC-DC Converter |
|---|---|
Use Scenario: High-current H-bridge for 48 V brushless DC motors in automated guided vehicles. IC Role / Device Role / Timing Role: Low-side switching element handling 90 A continuous phase current with synchronous rectification. Use Value: 4.5 mΩ RDS(on) limits conduction loss to 36.45 W at full load, enabling compact heatsink design. | Use Scenario: Primary-side switch in 48 V input, 12 V output isolated forward converter for telecom shelf power. IC Role / Device Role / Timing Role: Main power switch operating at 250 kHz with zero-voltage switching assistance. Use Value: 1020 pF Coss(eff) and 270 nC Qg enable efficient ZVS transition and low driver power dissipation. |
| Uninterruptible Power Supply | Industrial Inverter Output Stage |
Use Scenario: Battery-fed inverter stage converting 48 V DC to 120 V AC for critical medical equipment backup. IC Role / Device Role / Timing Role: High-current switching device in full-bridge topology with bidirectional current capability via body diode. Use Value: 680 A pulsed drain current and 520 mJ EAS withstand short-circuit events during grid failure transitions. | Use Scenario: Output stage of 3-phase 400 V industrial inverter driving 7.5 kW induction motor. IC Role / Device Role / Timing Role: 75 V-rated device used in 2-level inverter leg with active clamp protection. Use Value: 175°C TJ(max) allows operation at 95°C ambient without forced air, reducing system cooling cost. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar high-current 75 V power switching applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STW90NF70 | RDS(on) = 5.2 mΩ (typ), Qg = 220 nC, TJ(max) = 175°C | Higher conduction loss at 90 A; lower gate charge eases driver design | Prefer when gate drive capability is limited but thermal margin exists |
| IXTH90N75L2 | RDS(on) = 4.8 mΩ (typ), EAS = 380 mJ, TO-247 long leads | Lower avalanche robustness; identical package footprint but higher inductance | Choose only if existing layout uses L2 variant and avalanche stress is minimal |
Compared with STW90NF70 and IXTH90N75L2, IRFP2907ZPBF offers the lowest RDS(on) and highest EAS, making it optimal for high-reliability, high-current applications where thermal and transient robustness are prioritized over gate drive simplicity.
Availability
IRFP2907ZPBF is available at Aetrix Electronics and suitable for motor drives, telecom DC-DC converters, and uninterruptible power supplies requiring stable component supply and long-term industrial lifecycle support.
Supply support for IRFP2907ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.
The IRFP2907ZPBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in industrial motor control, power conversion, and renewable energy systems.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFP2907ZPBF supports 120 A continuous drain current at TC = 100°C per Figure 9 in the datasheet. This rating is determined by thermal limits-not silicon current density-and assumes proper heatsinking with RθJC = 0.49 °C/W and no additional interface resistance.
Does this MOSFET require a negative gate voltage for reliable turn-off?
No. The IRFP2907ZPBF has a gate threshold voltage range of 2.0–4.0 V and is fully enhanced at VGS = 10 V. A gate drive of 0 V ensures safe turn-off; applying –5 V is unnecessary and not specified in the Absolute Maximum Ratings.
Can the body diode be used for synchronous rectification in a buck converter?
Yes-the integrated body diode has a typical forward voltage of 1.3 V at 90 A and reverse recovery charge of 59–89 nC. However, its Qrr and trr (41–61 ns) are higher than discrete Schottky diodes, so efficiency gains depend on switching frequency and load profile.
Is the TO-247AC package lead-free and RoHS compliant?
Yes. The "PbF" suffix confirms lead-free termination, and the device meets RoHS Directive 2011/65/EU requirements. The "PD-95480B" package drawing specifies SnAgCu solder finish and halogen-free molding compound.
IRFP2907ZPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-247-3
- Packaging:
- Tube
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 75 V
- Current - Continuous Drain (Id) @ 25°C:
- 90A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 4.5mOhm @ 90A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs:
- 270 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 7500 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 310W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Through Hole
- Supplier Device Package:
- TO-247AC
IRFP2907ZPBF FAQ
1.How can I place an order for IRFP2907ZPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFP2907ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFP2907ZPBF reliable?
The price and inventory of IRFP2907ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP2907ZPBF is usually 5 days.
3.What payment methods are accepted for IRFP2907ZPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP2907ZPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFP2907ZPBF?
IRFP2907ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFP2907ZPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFP2907ZPBF?
For technical support, including IRFP2907ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP2907ZPBF requirements.
6.How does Aetrix verify that IRFP2907ZPBF is sourced from the original manufacturer or authorized distributors?
All IRFP2907ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP2907ZPBF meets industry standards.
7.What is the process for return or replacement of IRFP2907ZPBF?
All IRFP2907ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP2907ZPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFP2907ZPBF part is unused and in its original packaging.
Return procedure for IRFP2907ZPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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