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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP3006PBFXKMA1

Name: IRFP3006PBFXKMA1
Brand: Infineon Technologies
SKU: IRFP3006PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP3006PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP3006PBFXKMA1.pdf

Description:: TRENCH 40<-<100V

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP3006PBFXKMA1 from Infineon Technologies is a 60 V, 2.1 mΩ (typ), 195 A (package-limited) N-channel enhancement-mode Power MOSFET in TO-247AC package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 375 W maximum power dissipation at 25°C case temperature, features 200 nC typical total gate charge, and supports 1080 A pulsed drain current.

For engineers reviewing the IRFP3006PBFXKMA1 datasheet, IRFP3006PBFXKMA1 pinout, IRFP3006PBFXKMA1 application, or IRFP3006PBFXKMA1 equivalent, key selection criteria include its 2.5 mΩ max R_DS(on), 10 V/ns peak diode recovery dv/dt rating, 320 mJ single-pulse avalanche energy, and enhanced body diode dI/dt capability for robust unclamped inductive switching.

Technical Context

This device implements a trench-gated HEXFET® structure with optimized cell pitch and deep-trench shielding to achieve ultra-low on-resistance while maintaining high avalanche ruggedness. Its dynamic parameters-including 60 nC Miller charge and 140 nC sync gate charge-are calibrated for fast, low-loss switching in 100–500 kHz DC-DC converters.

The body diode exhibits 44 ns reverse recovery time at 25°C and 63 nC Q_rr, enabling efficient synchronous rectification without external Schottky assist. Thermal design is supported by 0.4 °C/W junction-to-case resistance and validated SOA curves up to 175°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	60 V - Maximum blocking voltage for primary-side switch or synchronous rectifier in ≤48 V bus systems.
R_DS(on) (typ)	2.1 mΩ @ V_GS = 10 V, I_D = 170 A - Enables <1.8 W conduction loss at 195 A continuous operation with proper heatsinking.
I_D (package)	195 A @ T_C = 25°C - Determined by wire-bond current limit, not silicon; defines practical continuous current in TO-247AC mounting.
Q_g (typ)	200 nC - Dictates gate driver power requirement and switching speed; requires ≥2 A peak drive for sub-100 ns turn-on.
E_AS	320 mJ - Thermally limited single-pulse avalanche energy; supports reliable operation under unclamped inductive load faults.
trr / Q_rr	44 ns / 63 nC @ T_J = 25°C - Low reverse recovery burden enables high-efficiency synchronous rectification without cross-conduction risk.
R_θJC	0.4 °C/W - Enables direct thermal interface to heatsink; allows 135°C ΔT rise at 375 W dissipation for precise thermal margining.

Pinout & Package

IRFP3006PBFXKMA1 uses the industry-standard TO-247AC package (3-lead, isolated tab), with drain connected to the metal tab for low-inductance, high-current path routing. The package is through-hole mounted and not recommended for surface-mount applications.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current output terminal	Electrically connected to metal tab; must be electrically isolated from heatsink unless system ground reference permits.
Gate	Control input for channel modulation	High-impedance node requiring low-inductance gate loop; sensitive to ringing due to 2.0 Ω internal gate resistance.
Source	Reference node for gate drive and current sensing	Low-side return path; critical for Kelvin-source layout to avoid gate threshold shift during high dI/dt events.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Supports >1360 A/µs di/dt without snap-off, enabling robust operation in hard-switched LLC and phase-shifted full-bridge topologies.
Fully characterized avalanche SOA	Validated up to 170 A avalanche current and 320 mJ single-pulse energy-enables reliable overvoltage fault handling without derating.
Improved dynamic dV/dt ruggedness	Rated for 10 V/ns peak diode recovery dv/dt-reduces risk of false turn-on during high-speed commutation in multi-phase converters.
Lead-free construction	Complies with RoHS Directive 2011/65/EU and JEDEC J-STD-020 reflow profile; compatible with standard Pb-free assembly processes.
Thermally optimized die attach	Enables 0.4 °C/W R_θJC and stable R_DS(on) performance across -55°C to +175°C junction range.

Applications

Server VRM Power Stage

UPS Inverter Output Stage

Use Scenario: High-density 48 V input, 1 V/300 A output buck converter in AI accelerator server power supplies.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in multiphase interleaved topology operating at 400–600 kHz.

Use Value: 2.1 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 3.5 mΩ devices, directly improving 12 V to 1 V conversion efficiency.

Use Scenario: 3-phase, 10 kVA online UPS with bidirectional IGBT/MOSFET hybrid inverter stage.

IC Role / Device Role / Timing Role: High-speed freewheeling switch in active clamp circuit, handling 195 A continuous and 1080 A surge currents.

Use Value: 320 mJ E_AS and 10 V/ns dv/dt rating eliminate need for external snubbers during line-spike transients.

Industrial Motor Drive Half-Bridge

EV Onboard Charger PFC Stage

Use Scenario: 7.5 kW servo drive with 20 kHz PWM and regenerative braking.

IC Role / Device Role / Timing Role: Upper-leg switching device in half-bridge configuration, subject to high dV/dt stress during shoot-through prevention.

Use Value: Enhanced gate ruggedness and 200 nC Q_g enable clean 50 ns turn-off with minimal Miller-induced oscillation.

Use Scenario: 6.6 kW two-stage OBC with boost PFC front-end operating at 100 kHz.

IC Role / Device Role / Timing Role: Synchronous rectifier in interleaved boost diode-replacement stage.

Use Value: 44 ns trr and 63 nC Q_rr reduce body-diode conduction loss by >60% versus standard Si diodes, raising PFC efficiency from 96.2% to 97.5%.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-frequency power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STL220N6F7AG	60 V, 1.8 mΩ (typ), TO-247-4L package with Kelvin source; 185 nC Q_g; no specified E_AS rating.	Requires 4-pin PCB layout; superior gate control but lacks validated avalanche SOA data for fault-prone industrial environments.	Prefer when precise gate control and lower Q_g outweigh need for documented avalanche robustness.
IXFH300N075	75 V, 0.75 mΩ (typ), TO-247 package; 320 nC Q_g; 450 mJ E_AS; higher voltage rating increases cost and capacitance.	Over-spec'd V_DSS adds C_iss (12.5 nF vs. 8.97 nF), reducing switching speed in 48 V systems.	Choose only if system requires 75 V headroom or higher avalanche margin than 320 mJ.

Compared with STL220N6F7AG and IXFH300N075, IRFP3006PBFXKMA1 offers optimal balance of low R_DS(on), moderate Q_g, and fully characterized avalanche performance-making it preferred for cost-sensitive, thermally constrained 48 V SMPS where reliability under transient overload is mandatory.

Availability

IRFP3006PBFXKMA1 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply inverters, and high-speed power switching applications requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP3006PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-frequency, high-current power conversion in server, telecom, and industrial UPS systems where conduction loss, switching loss, and ruggedness must be simultaneously optimized.

FAQ

What is the maximum continuous drain current for IRFP3006PBFXKMA1 at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 190 A (silicon-limited), as specified in the Absolute Maximum Ratings table. This value reflects thermal derating from the 270 A rating at 25°C, based on the device's 0.4 °C/W R_θJC and 175°C maximum junction temperature.

Does IRFP3006PBFXKMA1 support Kelvin-source gate drive?

No-IRFP3006PBFXKMA1 uses a standard 3-pin TO-247AC package without a dedicated Kelvin source terminal. Gate drive must reference the main source pin, requiring careful PCB layout to minimize source inductance and prevent gate oscillation during high dI/dt switching.

Can this MOSFET replace IRFP3006PbF in existing designs?

Yes-IRFP3006PBFXKMA1 is a drop-in replacement for IRFP3006PbF, sharing identical TO-247AC package, pinout, absolute maximum ratings, and electrical specifications. The "XKMA1" suffix denotes Infineon's internal tape-and-reel packaging variant and does not affect parametric performance.

What is the recommended gate resistor value for hard-switched 200 kHz operation?

A 2.7 Ω gate resistor is validated in the datasheet for 200 kHz hard-switched operation (see td(off)/tf test conditions). This value balances switching speed (118 ns t_d(off), 189 ns t_f) against gate drive loss and ringing suppression, assuming a 12 V gate drive with ≥2 A peak current capability.

IRFP3006PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: -

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 60 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 2.5mOhm @ 170A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 300 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 8970 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 375W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP3006PBFXKMA1 FAQ

1.How can I place an order for IRFP3006PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP3006PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP3006PBFXKMA1 reliable?

The price and inventory of IRFP3006PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP3006PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP3006PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP3006PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP3006PBFXKMA1?

IRFP3006PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP3006PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP3006PBFXKMA1?

For technical support, including IRFP3006PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP3006PBFXKMA1 requirements.

6.How does Aetrix verify that IRFP3006PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP3006PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP3006PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP3006PBFXKMA1?

All IRFP3006PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP3006PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP3006PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP3006PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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