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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP3077PBFXKMA1

Name: IRFP3077PBFXKMA1
Brand: Infineon Technologies
SKU: IRFP3077PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP3077PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP3077PBFXKMA1.pdf

Description:: MOSFET N-CH 75V 90A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP3077PBFXKMA1 from Infineon Technologies is a 75V, 2.8mΩ typ. N-channel enhancement-mode power MOSFET in TO-247AC package, rated for 120A continuous drain current (package-limited) and 200A silicon-limited operation. It delivers ultra-low R_DS(on), high avalanche energy (200mJ single-pulse), and enhanced body diode dV/dt (2.5V/ns) and dI/dt capability-optimized for synchronous rectification in high-frequency SMPS and UPS systems.

For engineers reviewing the IRFP3077PBFXKMA1 datasheet, IRFP3077PBFXKMA1 pinout, IRFP3077PBFXKMA1 application, or IRFP3077PBFXKMA1 equivalent, key selection criteria include its 3.3mΩ max. R_DS(on) at V_GS = 10V, 160nC total gate charge, 9400pF input capacitance, 850A pulsed drain rating, and validated unclamped inductive switching performance up to 175°C junction temperature.

Technical Context

This HEXFET® power MOSFET employs planar stripe cell structure with optimized gate oxide and trench-assisted source metallization to achieve industry-leading conduction loss and dynamic ruggedness. Its fully characterized SOA includes thermal-limited avalanche (E_AS = 200mJ), hard-switching safe operating area up to 10ms, and body diode recovery parameters (Q_rr = 59–89nC, t_rr = 42–75ns) validated across 25°C–125°C.

The device features low C_{oss eff.}(ER) = 1090pF and C_{oss eff.}(TR) = 1260pF-critical for ZVS/ZCS resonant converter design-and exhibits +0.091V/°C V_(BR)DSS temperature coefficient, enabling stable voltage blocking in wide-temperature industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75V - Maximum drain-source blocking voltage; defines maximum DC bus or flyback voltage in hard-switched topologies
R_DS(on) typ.	2.8mΩ @ V_GS = 10V, I_D = 75A - Enables <1.5W conduction loss at 120A, reducing heatsink requirements in high-current SMPS
I_D (Package)	120A @ T_C = 25°C - Wire-bond current limit; sets practical continuous output capability in TO-247AC mounting configurations
Q_g	160–220nC - Gate drive energy requirement; determines driver IC selection and switching loss in 100kHz+ applications
E_AS	200mJ (single-pulse) - Avalanche robustness metric; supports reliable operation under transient overvoltage in UPS and motor drive fault conditions
t_rr	42–75ns - Body diode reverse recovery time; enables efficient synchronous rectification without excessive shoot-through risk
C_iss	9400pF - Input capacitance; impacts gate drive loop stability and Miller effect during high-dV/dt switching

Pinout & Package

IRFP3077PBFXKMA1 uses the standard TO-247AC package: isolated tab (drain-connected), 3-pin through-hole configuration with 2.54mm lead pitch, 15.8mm height, and 20.3mm length. Mounting torque: 1.1N·m (10 lbf·in).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current path collector / heat sink interface	Electrically connected to metal tab; requires insulating washer when mounted to grounded heatsink
Source	Reference node for gate control and current return path	Low-inductance connection critical for minimizing ground bounce in high-di/dt switching
Gate	Control electrode for channel formation	High-impedance input requiring low-ESR gate resistor (typically 2.1Ω) to damp oscillation and control dv/dt

Key Features

Feature	Design Value
Worldwide best R_DS(on) in TO-247	2.8mΩ typ. at 75A - Delivers lowest conduction loss among 75V TO-247 MOSFETs, directly reducing system power loss
Enhanced body diode dV/dt capability	2.5V/ns - Prevents spurious turn-on during fast voltage transients in bridge-leg configurations
Fully characterized avalanche SOA	200mJ single-pulse E_AS - Enables robust unclamped inductive switching without external snubbers in UPS hold-up circuits
Improved dynamic dV/dt ruggedness	Validated per Fig. 21 test circuit - Ensures reliable operation under high-speed commutation with minimal gate oscillation

Applications

High-Efficiency Synchronous Rectification

Uninterruptible Power Supply (UPS)

Use Scenario: Secondary-side rectification in 100–500kHz LLC resonant converters for server PSUs.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes; conducts during transformer secondary voltage polarity reversal.

Use Value: Reduces conduction loss by >40% vs. 40V Schottky, enabling >96% full-load efficiency at 1.5kW output.

Use Scenario: Inverter stage in line-interactive UPS delivering 1–3kVA backup power.

IC Role / Device Role / Timing Role: High-current half-bridge switch handling battery-to-AC inversion with bidirectional energy flow.

Use Value: Withstands 850A pulsed current during overload events and sustains 200mJ avalanche energy during grid-fail transitions.

Hard-Switched Industrial Motor Drives

High-Frequency DC-DC Converters

Use Scenario: 3-phase inverter output stage in HVAC compressors switching at 8–16kHz.

IC Role / Device Role / Timing Role: Main power switch in IGBT/MOSFET hybrid topology; handles PWM-controlled phase current.

Use Value: 120A continuous rating and 0.44°C/W R_θJC enable compact heatsinking while maintaining <125°C junction temp under 100% load.

Use Scenario: Primary-side switch in 300–600kHz isolated forward or active-clamp forward converters.

IC Role / Device Role / Timing Role: High-efficiency main switch managing high di/dt (>400A/µs) during hard commutation.

Use Value: 42–63ns t_rr and 59–89nC Q_rr minimize dead-time losses and reduce EMI generation in multi-MHz gate drive circuits.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 75V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N75F7	R_DS(on) = 3.0mΩ typ., Q_g = 145nC, TO-247 long leads	Slightly lower gate charge reduces driver loss but higher R_DS(on) increases conduction loss at >100A	Preferable where gate drive power is constrained and peak current ≤100A
IXFH120N75X3	R_DS(on) = 2.7mΩ typ., Q_g = 200nC, HiPerFET™ Gen. 3	Lower on-resistance improves efficiency at full load but higher Q_g demands stronger gate driver	Better for ultra-high-efficiency designs with robust gate drive capability

Compared with STP120N75F7 and IXFH120N75X3, IRFP3077PBFXKMA1 offers the optimal balance of ultra-low R_DS(on), moderate Q_g, and proven avalanche ruggedness-making it preferred for high-reliability, high-current SMPS and UPS where thermal margin and fault tolerance are critical.

Availability

IRFP3077PBFXKMA1 is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply, hard-switched motor drives, and high-frequency DC-DC converters requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFP3077PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in mission-critical industrial and telecom infrastructure applications.

FAQ

What is the maximum continuous drain current rating for IRFP3077PBFXKMA1?

The continuous drain current is 120A at T_C = 25°C (package-limited by wire bond capacity), and 200A at T_C = 25°C under silicon-limited conditions. Derating applies above 25°C case temperature per the 2.3W/°C linear derating factor and R_θJC = 0.44°C/W thermal resistance.

Does IRFP3077PBFXKMA1 support avalanche operation, and what is its rated energy?

Yes-it is fully characterized for unclamped inductive switching with a thermally limited single-pulse avalanche energy (E_AS) of 200mJ, tested per JEDEC JESD24-11 using L = 0.028mH, R_G = 50Ω, and I_AS = 120A. Repetitive avalanche is not recommended beyond specified duty-cycle limits.

How does the body diode performance compare to standard power MOSFETs?

Its body diode offers enhanced dV/dt immunity (2.5V/ns), reduced Q_rr (59–89nC), and faster t_rr (42–75ns) versus legacy 75V MOSFETs-enabling reliable synchronous rectification without external diodes in high-frequency SMPS and reducing reverse recovery losses by up to 35%.

Is IRFP3077PBFXKMA1 compatible with surface-mount assembly processes?

No-the TO-247AC package is explicitly not recommended for surface-mount applications per Infineon documentation. It is designed for through-hole mounting with mechanical screw attachment (1.1N·m torque) and requires a flat, greased heatsink interface for optimal thermal performance.

IRFP3077PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 120A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 3.3mOhm @ 75A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 220 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 9400 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 340W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP3077PBFXKMA1 FAQ

1.How can I place an order for IRFP3077PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP3077PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP3077PBFXKMA1 reliable?

The price and inventory of IRFP3077PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP3077PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP3077PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP3077PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP3077PBFXKMA1?

IRFP3077PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP3077PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP3077PBFXKMA1?

For technical support, including IRFP3077PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP3077PBFXKMA1 requirements.

6.How does Aetrix verify that IRFP3077PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP3077PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP3077PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP3077PBFXKMA1?

All IRFP3077PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP3077PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP3077PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP3077PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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