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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP3415PBF

Name: IRFP3415PBF
Brand: Infineon Technologies
SKU: IRFP3415PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP3415PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP3415PBF.pdf

Description:: MOSFET N-CH 150V 43A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP3415PBF from Infineon Technologies is a 150V, 43A N-channel enhancement-mode power MOSFET in TO-247AC package, featuring 0.042Ω R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and full unclamped inductive avalanche rating (E_AS = 590 mJ). It serves as a high-efficiency main switch in DC-DC converters, motor drives, and UPS inverters.

For engineers reviewing the IRFP3415PBF datasheet, IRFP3415PBF pinout, IRFP3415PBF application, or IRFP3415PBF equivalent, key selection criteria include its 150V V_(BR)DSS, 0.042Ω on-resistance, 200W P_D at T_C = 25°C, fast switching (t_r = 55 ns), and rugged dv/dt capability (5.0 V/ns).

Technical Context

This N-channel MOSFET employs Infineon's fifth-generation HEXFET process to achieve low conduction loss and high thermal robustness. Its gate charge profile (Q_g = 200 nC, Q_gd = 98 nC) supports efficient hard-switching in 100–200 kHz power stages.

The device integrates a fast, low-loss body diode (t_rr = 260–390 ns, Q_rr = 2.2–3.3 µC) and exhibits stable R_DS(on) temperature coefficient (0.17 V/°C), enabling predictable performance across –55°C to +175°C operation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_(BR)DSS	150 V - Withstands up to 150 V drain-source voltage before breakdown, suitable for 120 VAC rectified bus and 48 V industrial systems.
R_DS(on) max	0.042 Ω - Delivers ≤1.9 W conduction loss at 22 A, reducing heatsink requirements in high-current switching nodes.
I_D @ T_C = 25°C	43 A - Supports continuous 43 A drain current with adequate case cooling, enabling compact 1–2 kW power stage designs.
E_AS	590 mJ - Fully rated for single-pulse unclamped inductive switching events, eliminating need for external snubbers in flyback or buck-boost topologies.
t_r/t_f	55 ns / 69 ns - Enables clean, low-loss transitions in hard-switched SMPS operating up to 200 kHz without excessive gate drive power.
dv/dt rating	5.0 V/ns - Resists false turn-on during high-slew-rate transients in bridge configurations, improving system reliability under noisy conditions.
T_J max	+175°C - Allows operation in sealed enclosures or high-ambient environments without derating, supporting automotive under-hood and industrial motor control use.

Pinout & Package

Supplied in TO-247AC package with isolated mounting hole, optimized for high-power commercial-industrial applications requiring >100 W dissipation. Thermal resistance R_θJC = 0.75°C/W enables efficient heat transfer to heatsinks.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Accepts 10 V logic-level gate drive; total gate charge Q_g = 200 nC requires ~2 W average drive power at 100 kHz.
D (Drain)	High-side power terminal	Connected to input bus or transformer primary; handles full load current and avalanche energy during switching transitions.
S (Source)	Power return and reference node	Serves as local ground reference for gate driver; internal source inductance L_S = 13 nH affects switching waveform fidelity.

Key Features

Feature	Design Value
Fully avalanche rated	590 mJ single-pulse E_AS ensures reliable operation under inductive fault conditions without external protection.
Dynamic dv/dt immunity	5.0 V/ns peak recovery dv/dt prevents spurious turn-on in half-bridge and synchronous rectifier configurations.
High-temperature operation	Rated for continuous operation up to +175°C junction temperature, supporting sealed or high-ambient deployments.
Low gate charge ratio	Q_gd/Q_gs = 5.8 supports stable Miller plateau control and reduces risk of shoot-through in bridge circuits.
Lead-free construction	RoHS-compliant Pb-free plating meets IPC-J-STD-020 reflow profiles and industrial environmental requirements.

Applications

Motor Drive Inverter

UPS DC-AC Inverter

Use Scenario: Three-phase 48 V BLDC motor controller delivering 1.5 kW mechanical output with field-oriented control.

IC Role / Device Role / Timing Role: High-side and low-side switching element in IGBT/MOSFET half-bridge leg, handling 43 A peak phase current.

Use Value: Low R_DS(on) minimizes conduction loss (<2 W per device), while 175°C rating allows operation in enclosed motor housing without forced air.

Use Scenario: Online double-conversion UPS converting 48 V battery bank to 230 VAC output using full-bridge topology.

IC Role / Device Role / Timing Role: Primary-side switching FET in push-pull or full-bridge DC-AC stage, switching at 50 kHz with 50% duty cycle.

Use Value: 590 mJ E_AS withstands transformer leakage inductance spikes during load transients, eliminating need for clamping diodes.

Industrial DC-DC Converter

EV Onboard Charger Stage

Use Scenario: 1.2 kW isolated LLC resonant converter stepping 400 VDC down to 12 VDC for industrial PLC power supplies.

IC Role / Device Role / Timing Role: Synchronous rectifier in secondary-side center-tapped configuration, operating in ZVS mode.

Use Value: Fast body diode (t_rr = 260 ns) and low Q_rr reduce reverse recovery loss, improving efficiency by 0.8% over legacy MOSFETs.

Use Scenario: AC-DC front-end PFC boost stage in 6.6 kW EV onboard charger, operating at 65 kHz with interleaved dual phases.

IC Role / Device Role / Timing Role: Main boost switch handling 22 A RMS current and 150 V blocking voltage in continuous conduction mode.

Use Value: 0.042 Ω R_DS(on) limits conduction loss to <1.1 W at full load, enabling natural convection cooling in space-constrained vehicle modules.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP140N10F7	100 V V_(BR)DSS, 0.0075 Ω R_DS(on), 140 A I_D, SuperFET III technology	Limited to ≤100 V bus; superior conduction loss but lower voltage margin	Select when operating below 80 V DC bus and prioritizing ultra-low R_DS(on) over avalanche robustness.
IXFH32N15	150 V V_(BR)DSS, 0.055 Ω R_DS(on), 32 A I_D, HiPerFET with 520 mJ E_AS	Lower current rating and slightly higher on-resistance; comparable dv/dt immunity	Choose for legacy design continuity where footprint compatibility with older IXYS devices is required.

Compared with STP140N10F7 and IXFH32N15, IRFP3415PBF uniquely balances 150 V rating, 43 A current, and industry-leading 590 mJ avalanche energy-making it optimal for ruggedized 48–120 V industrial inverters where fault tolerance outweighs marginal conduction loss reduction.

Availability

IRFP3415PBF is available at Aetrix Electronics and suitable for motor drives, uninterruptible power supplies, and industrial DC-DC converters requiring stable component supply and long-term manufacturability.

Supply support for IRFP3415PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive microcontrollers, and industrial sensors, with global manufacturing and quality certification to ISO/TS 16949 and IATF 16949.

The IRFP3415PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-reliability switching in industrial motor control, renewable energy inverters, and telecom power systems demanding ruggedness and thermal stability.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFP3415PBF supports 30 A continuous drain current at T_C = 100°C with V_GS = 10 V, as specified in the Absolute Maximum Ratings table. This reflects thermal derating due to reduced channel mobility and increased R_DS(on) at elevated temperatures, requiring appropriate heatsinking for sustained operation.

Is the TO-247AC package compatible with surface-mount assembly?

No-the TO-247AC package is explicitly not recommended for surface-mount applications per the manufacturer's package outline documentation. It is designed for through-hole mounting with mechanical screw attachment and thermal interface to heatsinks, requiring wave soldering or hand-soldering processes.

Does IRFP3415PBF require a gate resistor for safe operation?

Yes-a gate resistor (typically 2.5–10 Ω) is required to control dV/dt during turn-on and suppress oscillation caused by gate loop inductance. The datasheet specifies switching time test conditions using R_G = 2.5 Ω, and omitting it risks overshoot, ringing, and potential gate oxide damage during fast transitions.

How does the body diode performance compare to discrete Schottky diodes?

The integrated body diode has t_rr = 260–390 ns and V_SD = 1.3 V at 22 A, making it slower and higher forward-drop than most Schottky diodes. It is suitable for non-critical freewheeling but not for high-frequency synchronous rectification where <50 ns recovery and <0.5 V drop are needed.

IRFP3415PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 43A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 42mOhm @ 22A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 200 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2400 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 200W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP3415PBF FAQ

1.How can I place an order for IRFP3415PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP3415PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP3415PBF reliable?

The price and inventory of IRFP3415PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP3415PBF is usually 5 days.

3.What payment methods are accepted for IRFP3415PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP3415PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP3415PBF?

IRFP3415PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP3415PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP3415PBF?

For technical support, including IRFP3415PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP3415PBF requirements.

6.How does Aetrix verify that IRFP3415PBF is sourced from the original manufacturer or authorized distributors?

All IRFP3415PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP3415PBF meets industry standards.

7.What is the process for return or replacement of IRFP3415PBF?

All IRFP3415PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP3415PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP3415PBF part is unused and in its original packaging.

Return procedure for IRFP3415PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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