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Infineon Technologies IRFP4127PBF

Part No.:
IRFP4127PBF
Manufacturer:
Infineon Technologies
Category:
FETs, MOSFETs
Package:
TO-247-3
Datasheet:
AetrixIRFP4127PBF.pdf
Description:
MOSFET N-CH 200V 75A TO247AC
Quantity:
Payment:
Payment
Shipping:
Shipping

Inventory:604

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Product details

Overview

IRFP4127PBF from Infineon Technologies is a 200V, 75A N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 17mΩ typical RDS(on) at VGS = 10V, supports 300A pulsed drain current, and features enhanced body diode dV/dt (5.7 V/ns) and dI/dt capability for robust unclamped inductive switching in UPS and industrial power systems.

For engineers reviewing the IRFP4127PBF datasheet, IRFP4127PBF pinout, IRFP4127PBF application, or IRFP4127PBF equivalent, key selection criteria include its 244mJ single-pulse avalanche energy rating, 100nC total gate charge, 5380pF input capacitance, and validated performance in >100kHz hard-switched topologies with thermal resistance RθJC = 0.4°C/W.

Technical Context

This HEXFET® power MOSFET employs planar stripe cell structure with optimized gate oxide and source metallization to achieve low RDS(on) while maintaining high dv/dt immunity and controlled reverse recovery. Its dynamic parameters-including 31nC Miller charge, 136ns reverse recovery time at 25°C, and 458nC Qrr-are fully characterized across temperature for accurate loss modeling in synchronous buck and LLC resonant converters.

The device's avalanche SOA is thermally limited and validated per JEDEC JESD24-11, with safe operation defined by junction temperature ≤175°C under repetitive unclamped inductive switching. Its Coss eff.(ER) = 360pF enables precise snubberless design in high-voltage flyback and forward converters.

Key Specifications

ParameterValue and Actual Design Meaning
VDSS200V - Withstands up to 200V drain-source blocking voltage before avalanche conduction.
RDS(on) max21mΩ - Maximum on-resistance at 10V gate drive and 44A current ensures <1W conduction loss at 44A.
ID @ TC=25°C75A - Continuous drain current rating at case temperature 25°C defines maximum steady-state power handling.
EAS244mJ - Single-pulse avalanche energy rating enables reliable operation during transient overvoltage events.
Qg max150nC - Total gate charge determines required driver peak current and switching loss in hard-switched circuits.
trr136ns - Reverse recovery time at 25°C directly impacts body diode conduction loss and EMI in synchronous rectification.
RθJC0.4°C/W - Junction-to-case thermal resistance enables accurate heatsink sizing for 341W maximum power dissipation.

Pinout & Package

IRFP4127PBF uses the TO-247AC through-hole package with isolated tab (drain-connected), standard three-terminal configuration, and 1.1N·m mounting torque specification. The package is not suitable for surface-mount assembly.

Pin/TerminalCircuit RoleDesign Meaning
D (Drain)Main high-side power terminalConnected to internal die backside; electrically tied to metal tab-requires insulated mounting in most applications.
G (Gate)Control electrodeReceives 10V logic-level drive; 3.0Ω gate resistance limits ringing and simplifies driver design.
S (Source)Reference and return pathCommon node for gate drive reference and load current return; forms body diode anode with drain.

Key Features

FeatureDesign Value
Enhanced body diode dV/dt capability5.7 V/ns - Enables stable operation during fast voltage transients without parasitic turn-on in synchronous rectifiers.
Fully characterized avalanche SOA244mJ single-pulse rating - Allows predictable design margin for unclamped inductive switching in UPS and motor drives.
Low Coss eff.(ER)360pF - Reduces capacitive turn-off loss and improves efficiency in high-frequency ZVS/ZCS topologies.
Lead-free, RoHS-compliant constructionMeets IPC-J-STD-020 moisture sensitivity level 1 - Eliminates reflow concerns and supports lead-free manufacturing without derating.

Applications

High-Efficiency Synchronous RectificationUninterruptible Power Supply (UPS)

Use Scenario: Secondary-side rectification in 100–500kHz LLC resonant DC-DC converters for server PSUs.

IC Role / Device Role / Timing Role: Low-loss replacement for Schottky diodes; body diode conducts during dead-time, MOSFET channel conducts during active period.

Use Value: 17mΩ RDS(on) cuts conduction loss by >40% vs. 45V Schottky, enabling >96% full-load efficiency at 48V output.

Use Scenario: Inverter stage in online double-conversion UPS delivering clean 230VAC during grid failure.

IC Role / Device Role / Timing Role: High-current switching element in H-bridge inverter; handles bidirectional 75A peak load current.

Use Value: 300A pulsed drain rating and 244mJ avalanche energy ensure reliability during battery surge and short-circuit events.

Hard-Switched Industrial SMPSHigh-Frequency AC-DC Adapters

Use Scenario: Primary-side switch in 65–130kHz phase-shifted full-bridge for telecom rectifiers.

IC Role / Device Role / Timing Role: Main power switch subjected to 200V bus, 44A RMS current, and repetitive 50ns dv/dt stress.

Use Value: 5.7 V/ns peak diode recovery dv/dt rating prevents false triggering during rapid commutation.

Use Scenario: Active clamp forward converter in compact 120W laptop adapters operating at 250kHz.

IC Role / Device Role / Timing Role: Clamp switch managing transformer reset energy; experiences high dv/dt and moderate average current.

Use Value: 100nC total gate charge enables efficient driving with low-power gate drivers, reducing standby consumption.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative PartTechnical DifferenceApplication DifferenceSelection Advice
STP75NF20RDS(on) = 22mΩ (max), Qg = 120nC, EAS = 220mJLower avalanche ruggedness and higher gate charge increase switching loss in hard-switched UPS inverters.Preferable only when cost sensitivity outweighs efficiency and reliability requirements.
IXFH75N20X3RDS(on) = 15.5mΩ (typ), Qg = 92nC, EAS = 270mJ, trench-gate processSuperior conduction and switching performance, but higher price and different gate threshold (2.5–4.5V).Recommended for new designs targeting highest efficiency in >200kHz SMPS where gate drive compatibility is verified.

Compared with STP75NF20 and IXFH75N20X3, IRFP4127PBF offers balanced trade-offs: lower cost than IXFH75N20X3 with better avalanche margin than STP75NF20, making it optimal for established industrial UPS and SMPS platforms requiring proven ruggedness and supply stability.

Availability

IRFP4127PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply, and hard-switched industrial SMPS requiring stable component supply and long-term production continuity.

Supply support for IRFP4127PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

IRFP4127PBF belongs to the HEXFET® power MOSFET product line, engineered for high-reliability, high-frequency power conversion in mission-critical infrastructure and industrial equipment.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFP4127PBF supports 53A continuous drain current at TC = 100°C, as specified in its Absolute Maximum Ratings table. This derating reflects thermal limitations of the TO-247AC package and must be applied when heatsink temperature exceeds 25°C to maintain junction temperature below 175°C.

Is IRFP4127PBF suitable for surface-mount assembly?

No. The TO-247AC package used by IRFP4127PBF is explicitly not recommended for surface-mount applications per the datasheet. It requires through-hole mounting with mechanical screw attachment and thermal interface material to a heatsink for proper thermal management.

How does the body diode's reverse recovery performance compare at elevated temperature?

At 125°C junction temperature, reverse recovery time increases to 139ns and Qrr rises to 688nC-both 2–3% higher than room-temperature values. This modest thermal drift enables consistent synchronous rectifier timing across industrial temperature ranges without control loop recalibration.

What is the gate threshold voltage range and its impact on drive circuit design?

VGS(th) ranges from 3.0V to 5.0V at ID = 250µA. This wide spread necessitates gate drive voltages ≥10V to ensure full enhancement across process variation, and confirms compatibility with standard 12V logic-level drivers without requiring negative turn-off bias.

IRFP4127PBF Specifications

Product attributes
Attribute value
Manufacturer:
Infineon Technologies
Series:
HEXFET®
Package/Case:
TO-247-3
Packaging:
Tube
Product Status:
Last Time Buy
FET Type:
N-Channel
Technology:
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss):
200 V
Current - Continuous Drain (Id) @ 25°C:
75A (Tc)
Drive Voltage (Max Rds On, Min Rds On):
10V
Rds On (Max) @ Id, Vgs:
21mOhm @ 44A, 10V
Vgs(th) (Max) @ Id:
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs:
150 nC @ 10 V
Vgs (Max):
±20V
Input Capacitance (Ciss) (Max) @ Vds:
5380 pF @ 50 V
FET Feature:
-
Power Dissipation (Max):
341W (Tc)
Operating Temperature:
-55°C ~ 175°C (TJ)
Grade:
-
Qualification:
-
Mounting Type:
Through Hole
Supplier Device Package:
TO-247AC

IRFP4127PBF FAQ

1.How can I place an order for IRFP4127PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4127PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4127PBF reliable?

The price and inventory of IRFP4127PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4127PBF is usually 5 days.

3.What payment methods are accepted for IRFP4127PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4127PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4127PBF?

IRFP4127PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4127PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4127PBF?

For technical support, including IRFP4127PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4127PBF requirements.

6.How does Aetrix verify that IRFP4127PBF is sourced from the original manufacturer or authorized distributors?

All IRFP4127PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4127PBF meets industry standards.

7.What is the process for return or replacement of IRFP4127PBF?

All IRFP4127PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4127PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4127PBF part is unused and in its original packaging.

Return procedure for IRFP4127PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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