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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4137PBF

Name: IRFP4137PBF
Brand: Infineon Technologies
SKU: IRFP4137PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4137PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4137PBF.pdf

Description:: MOSFET N-CH 300V 38A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP4137PBF from Infineon is a 300V, 38A N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-frequency hard-switching and synchronous rectification. It delivers 56 mΩ typical R_DS(on) at V_GS = 10 V, supports 152 A pulsed drain current, and features 8.9 V/ns peak diode recovery dv/dt capability-used in UPS and high-efficiency SMPS primary-side switching.

For engineers reviewing the IRFP4137PBF datasheet, IRFP4137PBF pinout, IRFP4137PBF application, or IRFP4137PBF equivalent, key selection criteria include its 300 V V_DSS, 56 mΩ R_DS(on), 83 nC total gate charge, 302 ns reverse recovery time at 25°C, and avalanche-rated 541 mJ single-pulse energy-critical for rugged unclamped inductive switching.

Technical Context

This HEXFET® power MOSFET employs planar stripe cell structure with optimized gate oxide and body diode design to achieve enhanced dynamic dv/dt ruggedness and controlled reverse recovery. Its 0.44 °C/W junction-to-case thermal resistance enables high-power operation with active heatsinking.

The device is characterized for hard-switched topologies up to high frequencies, with fully specified C_iss (5168 pF), C_oss (300 pF), and C_rss (77 pF) at V_DS = 50 V, and effective output capacitance values (C_{oss eff. (TR)} = 265 pF, C_{oss eff. (ER)} = 196 pF) validated across 0–240 V transitions.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	300 V - Withstands 300 V drain-source blocking voltage before avalanche conduction.
R_DS(on) typ.	56 mΩ @ V_GS = 10 V, I_D = 24 A - Enables low conduction loss in 38 A continuous switching applications.
Q_g max.	125 nC - Determines gate drive power requirement and switching speed in hard-switched converters.
trr max.	379 ns @ T_J = 125°C - Defines minimum dead-time needed to prevent shoot-through in synchronous rectifiers.
E_AS	541 mJ - Specifies single-pulse unclamped inductive switching energy limit without failure.
dv/dt peak	8.9 V/ns - Confirmed diode recovery robustness under fast voltage transients in high-dv/dt circuits.
R_θJC max.	0.44 °C/W - Enables thermal design with ≤ 100°C temperature rise at 341 W dissipation under ideal heatsink coupling.

Pinout & Package

IRFP4137PBF uses the industry-standard TO-247AC package: insulated tab, through-hole mounting, non-surface-mount compatible. Pin 1 = Gate, Pin 2 = Drain (tab), Pin 3 = Source.

Pin/Terminal	Circuit Role	Design Meaning
Gate (G)	Control electrode	Receives 10 V logic-level signal to fully enhance channel; 1.3 Ω internal gate resistance limits ringing.
Drain (D)	High-side power terminal	Connected to heatsink via metal tab; carries full load current and withstands 300 V blocking.
Source (S)	Reference node / return path	Serves as common reference for gate drive and current sensing; tied to PCB ground plane in most topologies.

Key Features

Feature	Design Value
Fully characterized avalanche SOA	541 mJ single-pulse energy rating validated per JEDEC JESD24-11, enabling reliable unclamped inductive turn-off.
Enhanced body diode dV/dt & dI/dt	8.9 V/ns peak recovery dv/dt and 1771 A/µs di/dt capability-reduces risk of parasitic turn-on in bridge legs.
Low Crss / Miller charge	26–39 nC Q_gd minimizes Miller-induced switching delay and improves gate drive efficiency in high-frequency designs.
Lead-free & RoHS compliant	Meets EU Directive 2011/65/EU; no exemption required for lead content-supports green manufacturing and export compliance.

Applications

Uninterruptible Power Supply (UPS)

High-Frequency SMPS

Use Scenario: Online double-conversion UPS with bidirectional DC-DC stage and battery charging circuitry.

IC Role / Device Role / Timing Role: Primary-side high-side switch in 300 V input buck-boost or half-bridge topology operating at 50–100 kHz.

Use Value: 56 mΩ R_DS(on) reduces conduction loss during extended battery backup; 541 mJ E_AS ensures reliability during grid fault transients.

Use Scenario: Server PSU or telecom rectifier using phase-shifted full-bridge with synchronous rectification.

IC Role / Device Role / Timing Role: Secondary-side synchronous rectifier MOSFET in 12 V or 48 V output stage, driven by transformer-coupled gate signals.

Use Value: Fast 302 ns trr at 25°C enables tight dead-time control; low Q_gd/Q_g ratio improves ZVS transition margin.

Hard-Switched Motor Drive

Industrial HV DC-DC Converter

Use Scenario: 3-phase inverter for HVAC compressors or industrial pumps rated up to 5 kW.

IC Role / Device Role / Timing Role: Upper-leg IGBT replacement in 300 V bus inverter leg, operated in hard-switched 6–20 kHz PWM mode.

Use Value: 8.9 V/ns dv/dt ruggedness prevents false triggering during rapid bus voltage transitions; TO-247AC mechanical stability supports high-vibration environments.

Use Scenario: Isolated 400 V to 24 V DC-DC converter for factory automation controllers.

IC Role / Device Role / Timing Role: Primary-side switch in asymmetrical half-bridge or active-clamp forward topology with 100–250 kHz switching.

Use Value: 5168 pF C_iss and 265 pF C_{oss eff. (TR)} support predictable gate drive timing; 0.44 °C/W R_θJC allows compact heatsink integration.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW30NM60FD	600 V V_DSS, 30 A I_D, 110 mΩ R_DS(on), D²PAK package	Higher voltage rating but lower current and higher on-resistance; unsuitable for 300 V/38 A continuous duty.	Choose only if system requires >500 V blocking and can accept higher conduction loss.
IXFH30N60P	600 V V_DSS, 30 A I_D, 140 mΩ R_DS(on), TO-247 package	Lower current rating, significantly higher R_DS(on), no published trr or dv/dt data-less suitable for synchronous rectification.	Select only when 600 V isolation is mandatory and switching frequency is below 50 kHz.

Compared with STW30NM60FD and IXFH30N60P, IRFP4137PBF offers optimal balance of 300 V rating, 38 A current, 56 mΩ on-resistance, and verified 8.9 V/ns dv/dt performance-making it uniquely suited for high-efficiency, high-ruggedness 300 V-class hard-switched power stages.

Availability

IRFP4137PBF is available at Aetrix Electronics and suitable for uninterruptible power supply (UPS), high-frequency switched-mode power supplies (SMPS), and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRFP4137PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFP4137PBF belongs to Infineon's HEXFET® power MOSFET product line, engineered for high-reliability, high-ruggedness switching in hard-switched and high-frequency power conversion systems.

FAQ

What is the maximum continuous drain current for IRFP4137PBF at 100°C case temperature?

The maximum continuous drain current is 27 A at T_C = 100°C and V_GS = 10 V, derated from 38 A at 25°C per the linear derating factor of 2.3 W/°C and thermal resistance limits. This value assumes proper heatsinking and ambient conditions meeting datasheet mounting guidelines.

Does IRFP4137PBF support gate drive at 5 V logic levels?

No-IRFP4137PBF has a gate threshold voltage range of 3.0–5.0 V, but its R_DS(on) is specified only at V_GS = 10 V (56 mΩ typ.). At 5 V, the device operates in weak inversion with significantly higher on-resistance and unpredictable conduction, making it unsuitable for reliable 5 V gate drive without additional characterization.

Is IRFP4137PBF suitable for surface-mount assembly?

No-the TO-247AC package is explicitly not recommended for surface-mount applications per the datasheet (Rev. 2.1, p.7). It requires through-hole mounting with mechanical screw attachment (10 lbf·in torque) and thermal interface to an external heatsink; reflow soldering is not supported.

How does the body diode performance compare to discrete Schottky diodes in synchronous rectification?

The IRFP4137PBF body diode exhibits 1.3 V forward voltage at 24 A and 25°C, higher than typical Schottky diodes (0.4–0.6 V), but its 302 ns reverse recovery time and 1739 nC Q_rr are fully characterized and optimized for controlled commutation. In well-designed synchronous gate-drive schemes, it eliminates reverse recovery spikes seen with fast recovery diodes-offering trade-offs favoring ruggedness over ultra-low VF.

IRFP4137PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bulk

Product Status:: Last Time Buy

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 300 V

Current - Continuous Drain (Id) @ 25°C:: 38A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 69mOhm @ 24A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 125 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 5168 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 341W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4137PBF FAQ

1.How can I place an order for IRFP4137PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4137PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4137PBF reliable?

The price and inventory of IRFP4137PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4137PBF is usually 5 days.

3.What payment methods are accepted for IRFP4137PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4137PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4137PBF?

IRFP4137PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4137PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4137PBF?

For technical support, including IRFP4137PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4137PBF requirements.

6.How does Aetrix verify that IRFP4137PBF is sourced from the original manufacturer or authorized distributors?

All IRFP4137PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4137PBF meets industry standards.

7.What is the process for return or replacement of IRFP4137PBF?

All IRFP4137PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4137PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4137PBF part is unused and in its original packaging.

Return procedure for IRFP4137PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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