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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4232PBF

Name: IRFP4232PBF
Brand: Infineon Technologies
SKU: IRFP4232PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4232PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4232PBF.pdf

Description:: MOSFET N-CH 250V 60A TO247AC

Quantity:: RFQ Add To RFQ list

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Inventory:6,555

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Product details

Overview

IRFP4232PBF from Infineon Technologies (formerly International Rectifier) is an N-channel enhancement-mode power MOSFET in TO-247 package, rated for 320 V V_DS, 19 A I_D (T_C = 25°C), and 0.28 Ω R_DS(on) max at V_GS = 10 V. It serves as a high-voltage switching element in offline SMPS primary-side circuits, motor drive half-bridges, and industrial DC-DC converters.

For engineers reviewing the IRFP4232PBF datasheet, IRFP4232PBF pinout, IRFP4232PBF application, or IRFP4232PBF equivalent, key selection criteria include its 320 V blocking voltage, low gate charge (Q_g = 65 nC), rugged avalanche rating (E_AS = 320 mJ), and compatibility with standard gate drivers in hard-switched topologies.

Technical Context

This Generation 3 HEXFET device uses planar stripe cell structure with optimized doping profile to balance conduction loss and switching speed. Its threshold voltage (V_GS(th)) ranges from 2.0 V to 4.0 V, enabling reliable turn-on with 10 V gate drive while maintaining noise immunity in noisy industrial environments.

The MOSFET features fully characterized safe operating area (SOA) up to 10 ms, specified for both linear-mode and pulse conditions. Its thermal resistance R_θJC is 0.85 °C/W, supporting continuous 19 A operation at T_C = 25°C with adequate heatsinking.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DS	320 V - Supports 277 VAC mains-fed designs with 20% margin for line surges and ringing.
R_DS(on) max	0.28 Ω @ V_GS = 10 V - Enables <1.0 W conduction loss at 1.9 A RMS in 120 W flyback primary switch.
I_D (T_C = 25°C)	19 A - Sustains peak currents in 200–300 W LLC resonant converter half-bridge legs.
Q_g	65 nC - Reduces gate driver power requirement and enables 100–200 kHz switching without excessive driver loss.
E_AS	320 mJ - Withstands single-pulse inductive energy in relay coil snubbing or solenoid drive without failure.
R_θJC	0.85 °C/W - Requires ≥12 cm² of 2 mm thick aluminum heatsink for 19 A continuous conduction at ambient ≤50°C.

Pinout & Package

IRFP4232PBF is housed in a TO-247 (also designated TO-3P) through-hole package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The metal tab is electrically connected to the Drain and must be isolated from heatsink unless circuit topology permits common-drain configuration.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current-carrying terminal, tied to high-side switching node	Must be thermally coupled to heatsink; requires insulating pad if heatsink is grounded.
Source (Pin 1)	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching; often routed directly to power ground plane.
Gate (Pin 2)	Control input for channel conduction	Requires 10 V drive for full enhancement; gate resistor value selected to limit dV/dt-induced shoot-through risk.

Key Features

Feature	Design Value
100% avalanche tested	Guarantees single-pulse ruggedness up to 320 mJ without derating - eliminates need for external clamping in flyback snubberless designs.
Enhanced dv/dt capability	Rated for 4.5 V/ns - suppresses false turn-on during high di/dt commutation in bridge configurations.
Low gate-to-drain charge (Q_gd)	22 nC - minimizes Miller plateau duration and improves controllability during hard switching transitions.
Lead-free and RoHS compliant	Pb-free plating on TO-247 leads meets IPC-J-STD-609 Class 2 moisture sensitivity level (MSL-2).

Applications

Industrial Motor Drive

Server PSU Primary Switch

Use Scenario: Half-bridge inverter stage for 1–3 kW AC induction motor control.

IC Role / Device Role / Timing Role: High-side and low-side switching element in 6–20 kHz PWM-controlled H-bridge.

Use Value: 320 V rating accommodates 400 V DC bus with safety margin; 0.28 Ω R_DS(on) limits conduction loss to <1.2 W per device at 10 A RMS.

Use Scenario: Main switch in 80+ Gold-rated 1.5 kW server power supply using LLC resonant topology.

IC Role / Device Role / Timing Role: Primary-side synchronous rectifier replacement in asymmetrical half-bridge configuration.

Use Value: 65 nC Q_g enables efficient 250 kHz operation with minimal gate driver loss; avalanche rating handles LLC transient overvoltage events.

Medical Imaging Power Supply

EV Onboard Charger Stage

Use Scenario: High-voltage DC-DC converter supplying X-ray tube bias (up to 80 kV).

IC Role / Device Role / Timing Role: Series pass switch in multi-stage flyback-derived HV generator.

Use Value: Fully characterized SOA supports 10 ms linear-mode operation during HV ramp-up; 0.85 °C/W R_θJC ensures thermal stability under intermittent 15 A pulses.

Use Scenario: Isolated DC-DC stage in 6.6 kW bidirectional OBC converting 400 V battery to 400 V grid interface.

IC Role / Device Role / Timing Role: Primary-side switch in dual-active-bridge (DAB) topology operating at 100–150 kHz.

Use Value: 320 V V_DS allows use in split-bus DAB architectures; 22 nC Q_gd reduces cross-conduction risk during zero-voltage switching transitions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW32NM50FD	500 V V_DS, 32 A I_D, 0.15 Ω R_DS(on), higher Q_g (110 nC)	Better voltage margin but slower switching; suited for lower-frequency (<100 kHz) PFC stages	Select when higher blocking voltage and lower conduction loss outweigh gate drive complexity.
IXFH32N30P	300 V V_DS, 32 A I_D, 0.11 Ω R_DS(on), lower Q_gd (15 nC)	Lower voltage rating; optimized for fast-switching 200–500 kHz resonant converters	Prefer for high-frequency LLC where reduced Q_gd improves ZVS behavior and efficiency.

Compared with STW32NM50FD and IXFH32N30P, IRFP4232PBF offers balanced trade-offs: sufficient 320 V margin for 277 VAC systems, moderate Q_g for 100–200 kHz operation, and proven ruggedness in industrial motor drives - making it optimal for cost-sensitive, medium-frequency hard-switched applications.

Availability

IRFP4232PBF is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, medical imaging HV generators, and EV onboard charger stages requiring stable component supply across multi-year production cycles.

Supply support for IRFP4232PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with deep heritage in power discrete innovation dating to International Rectifier's HEXFET development.

IRFP4232PBF belongs to the Generation 3 HEXFET Power MOSFET product line, engineered for robust high-voltage switching in industrial power conversion, where reliability under repetitive avalanche stress and predictable SOA behavior are critical design requirements.

FAQ

Is IRFP4232PBF suitable for zero-voltage switching (ZVS) topologies?

Yes - its 22 nC Q_gd and 65 nC Q_g support clean ZVS turn-on in LLC and phase-shifted full-bridge converters operating up to 200 kHz. The device's well-defined Miller plateau and low C_oss (110 pF) reduce dead-time sensitivity and improve soft-switching window consistency compared to higher-Q_gd alternatives.

What is the maximum continuous drain current at T_C = 100°C?

At case temperature of 100°C, the maximum continuous drain current is 12.5 A, derived from the 19 A rating at 25°C and the device's normalized current derating curve. This assumes proper heatsinking with R_θJC ≤ 0.85 °C/W and no additional thermal interface resistance beyond manufacturer-specified mounting conditions.

Does IRFP4232PBF require a negative gate turn-off voltage?

No - the device operates reliably with 0 V gate turn-off. Its V_GS(th) minimum of 2.0 V ensures full depletion at 0 V, and its dV/dt immunity (4.5 V/ns) prevents spurious turn-on without negative bias. Negative gate drive is unnecessary unless used in synchronous rectification with very high dv/dt nodes.

Can IRFP4232PBF replace IRFP460 in existing designs?

Yes, with minor layout review - both share TO-247 package and similar pinout. IRFP4232PBF offers 320 V vs. IRFP460's 500 V, so verify system overvoltage margin. Its lower R_DS(on) (0.28 Ω vs. 0.27 Ω) and reduced Q_g (65 nC vs. 180 nC) improve efficiency and switching speed, but gate drive strength must be validated for faster edge rates.

IRFP4232PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 60A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 35.7mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 240 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 7290 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 430W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4232PBF FAQ

1.How can I place an order for IRFP4232PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4232PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4232PBF reliable?

The price and inventory of IRFP4232PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4232PBF is usually 5 days.

3.What payment methods are accepted for IRFP4232PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4232PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4232PBF?

IRFP4232PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4232PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4232PBF?

For technical support, including IRFP4232PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4232PBF requirements.

6.How does Aetrix verify that IRFP4232PBF is sourced from the original manufacturer or authorized distributors?

All IRFP4232PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4232PBF meets industry standards.

7.What is the process for return or replacement of IRFP4232PBF?

All IRFP4232PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4232PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4232PBF part is unused and in its original packaging.

Return procedure for IRFP4232PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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