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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4332-203PBF

Name: IRFP4332-203PBF
Brand: Infineon Technologies
SKU: IRFP4332-203PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4332-203PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4332-203PBF.pdf

Description:: MOSFET N-CH 250V 57A TO247AC

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Product details

Overview

IRFP4332-203PBF from Infineon Technologies is a 250V, 57A N-channel enhancement-mode Power MOSFET in TO-247AC package, featuring 29mΩ R_DS(on) at V_GS = 10V, 175°C max junction temperature, and 300V repetitive avalanche rating. It is engineered for high-reliability sustain, energy recovery, and pass-switch functions in plasma display panel (PDP) driver circuits.

For engineers reviewing the IRFP4332-203PBF datasheet, IRFP4332-203PBF pinout, IRFP4332-203PBF application, or IRFP4332-203PBF equivalent, key selection criteria include its low EPULSE (520 µJ @ 25°C), fast switching (t_st = 100 ns), high repetitive peak current (120 A), robust avalanche capability (E_AR = 36 V), and optimized gate charge (Q_g = 99 nC).

Technical Context

This MOSFET employs advanced silicon process technology to minimize conduction and switching losses in high-frequency, high-current PDP sustain stages. Its low Q_gd/Q_g ratio (35/99 nC) and short rise/fall times support precise timing control in bidirectional energy recovery paths.

The device integrates a robust body diode with 190–290 ns reverse recovery time and 820–1230 nC Q_rr, enabling reliable commutation in unclamped inductive switching. Thermal design is supported by R_θJC = 0.42°C/W and 175°C rated operation under sustained thermal stress.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	250 V - Maximum blocking voltage before avalanche onset; enables use in 200V-class PDP sustain rails with margin.
R_DS(on)	29 mΩ typ. @ V_GS = 10V, I_D = 35A - Low conduction loss supports >95% efficiency in high-current sustain switches.
I_D (T_C = 25°C)	57 A - Continuous drain current rating at case temperature 25°C; defines maximum steady-state load handling.
E_PULSE	520 µJ @ T_J = 25°C - Energy dissipated per pulse during unclamped inductive turn-off; critical for PDP energy recovery reliability.
Q_g	99 nC typ. - Total gate charge required for full enhancement; determines gate driver power and switching speed trade-offs.
t_st	100 ns - Shoot-through blocking time; ensures safe dead-time management in half-bridge PDP drive stages.
T_J max	175°C - Maximum operating junction temperature; allows extended thermal headroom in sealed PDP enclosures.

Pinout & Package

IRFP4332-203PBF uses the industry-standard TO-247AC package: isolated metal tab (Drain), three leads (Gate, Drain, Source), non-surface-mount compatible, with mechanical mounting via M3/6-32 screw (1.1 N·m torque).

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-side current path / Heat sink interface	Electrically connected to package tab; must be electrically isolated from heatsink unless circuit topology requires common-drain configuration.
Gate	Control terminal for channel modulation	Receives 0–10V logic-level signal; low input capacitance (C_iss = 5860 pF) demands careful gate resistor selection to limit ringing.
Source	Reference node for gate drive and current return	Serves as local ground reference for gate driver; internal source inductance (L_S = 13 nH) affects di/dt-induced voltage spikes during turn-off.

Key Features

Feature	Design Value
Low EPULSE rating	520 µJ @ 25°C - Reduces localized thermal stress during repetitive unclamped inductive switching in PDP sustain circuits.
High repetitive peak current	120 A @ T_C = 100°C - Enables reliable operation in high-dI/dt energy recovery phases without bond-wire fusing.
Fast switching transition	t_st = 100 ns - Minimizes overlap conduction loss in bridge configurations used for PDP segment driving.
Robust avalanche capability	E_AR = 36 V - Sustains repeated avalanche events during transient overvoltage conditions without parameter degradation.
High-temperature operation	T_J = 175°C - Extends usable lifetime in thermally constrained PDP chassis environments with limited airflow.

Applications

Plasma Display Panel Sustain Stage

PDP Energy Recovery Circuit

Use Scenario: Driving row/column electrodes in AC plasma display panels requiring rapid, high-current bipolar sustain pulses.

IC Role / Device Role / Timing Role: High-side switch in half-bridge sustain driver; handles 200V, 50A pulsed currents at 200 kHz.

Use Value: Low R_DS(on) and high I_DM ensure minimal conduction loss and thermal runaway resistance during continuous pulsing.

Use Scenario: Recovering inductive energy stored in sustain transformer windings during polarity reversal.

IC Role / Device Role / Timing Role: Pass-switch in resonant recovery loop; conducts bidirectionally with controlled body diode recovery.

Use Value: Optimized Q_rr (820–1230 nC) and t_rr (190–290 ns) reduce switching loss and EMI during high-dI/dt commutation.

PDP Pass-Switch Module

Industrial High-Voltage Switching

Use Scenario: Selectively enabling/disabling sustain voltage paths across multiple PDP sub-panels.

IC Role / Device Role / Timing Role: Unidirectional pass element controlled by logic-level gate drive; operates in linear and saturated regions.

Use Value: 175°C T_J rating and low ΔV_GS(th)/ΔT_J (-14 mV/°C) maintain stable threshold behavior across wide ambient ranges.

Use Scenario: Solid-state relay replacement in industrial 200–250V DC bus switching applications.

IC Role / Device Role / Timing Role: Main power switch in high-reliability DC contactor or battery disconnect module.

Use Value: Repetitive avalanche rating (300V) and E_AS = 210 mJ provide fault tolerance against inductive kickback and load dump transients.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-voltage, high-current MOSFET switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW48N60M2	600V V_DSS, 48A I_D, 55mΩ R_DS(on), TO-247 package	Higher voltage rating but lower current and higher on-resistance; suited for 400–600V systems, not PDP-specific	Choose when system bus voltage exceeds 250V and avalanche robustness is secondary to voltage margin.
IXFH50N20X3	200V V_DSS, 50A I_D, 32mΩ R_DS(on), TO-247 package, 150°C T_J	Lower voltage rating and reduced thermal capability; lacks specified EPULSE and PDP-optimized timing specs	Acceptable only in non-critical 200V applications where 175°C operation and 300V avalanche are not required.

Compared with STW48N60M2 and IXFH50N20X3, IRFP4332-203PBF uniquely balances 250V blocking, 57A current, 175°C operation, and PDP-validated EPULSE/avalanche performance-making it irreplaceable in legacy and new-design plasma display sustain modules.

Availability

IRFP4332-203PBF is available at Aetrix Electronics and suitable for plasma display panel sustain stages, energy recovery circuits, pass-switch modules, and industrial high-voltage DC switching requiring stable component supply and long-term lifecycle continuity.

Supply support for IRFP4332-203PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, developed specifically for high-efficiency, high-reliability switching in plasma display panel driver systems and related high-dI/dt, high-temperature applications.

FAQ

Is IRFP4332-203PBF RoHS-compliant and lead-free?

Yes. The "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and lead-free soldering compatibility. The device uses matte tin-plated leads and meets JEDEC J-STD-020 moisture sensitivity level (MSL) 1 requirements for unlimited floor life at ≤30°C/85% RH.

What is the recommended gate resistor value for optimal switching in PDP sustain applications?

A 4.7 Ω gate resistor is validated per datasheet test conditions (V_DD = 200V, I_D = 35A) to achieve t_st = 100 ns while limiting gate current surge. For 50A+ operation, increase to 6.8 Ω to reduce ringing and overshoot without compromising turn-on speed.

Does IRFP4332-203PBF require external snubbers in energy recovery circuits?

Not inherently-the device's low C_oss (530 pF) and controlled E_PULSE enable snubberless operation in properly damped resonant recovery topologies. However, a 100 pF/100 Ω RC snubber across Drain–Source is recommended if measured dv/dt exceeds 5 V/ns during turn-off.

Can IRFP4332-203PBF be paralleled for higher current capacity?

Yes-its positive R_DS(on) temperature coefficient (dR_DS(on)/dT ≈ +0.4%/°C) ensures inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical layout, and individual source resistors (0.01 Ω) for dynamic balancing per datasheet guidelines.

IRFP4332-203PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 250 V

Current - Continuous Drain (Id) @ 25°C:: 57A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 33mOhm @ 35A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 150 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 5860 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 360W (Tc)

Operating Temperature:: -40°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4332-203PBF FAQ

1.How can I place an order for IRFP4332-203PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4332-203PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4332-203PBF reliable?

The price and inventory of IRFP4332-203PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4332-203PBF is usually 5 days.

3.What payment methods are accepted for IRFP4332-203PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4332-203PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4332-203PBF?

IRFP4332-203PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4332-203PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4332-203PBF?

For technical support, including IRFP4332-203PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4332-203PBF requirements.

6.How does Aetrix verify that IRFP4332-203PBF is sourced from the original manufacturer or authorized distributors?

All IRFP4332-203PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4332-203PBF meets industry standards.

7.What is the process for return or replacement of IRFP4332-203PBF?

All IRFP4332-203PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4332-203PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4332-203PBF part is unused and in its original packaging.

Return procedure for IRFP4332-203PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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