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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4368PBF

Name: IRFP4368PBF
Brand: Infineon Technologies
SKU: IRFP4368PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4368PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4368PBF.pdf

Description:: MOSFET N-CH 75V 195A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP4368PBF from Infineon Technologies is a 75V, 195A (package-limited), N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 1.46 mΩ typ. R_DS(on) at V_GS = 10 V, supports 1280 A pulsed drain current, and features enhanced body diode dV/dt (13 V/ns) and dI/dt ruggedness for UPS and industrial power conversion.

For engineers reviewing the IRFP4368PBF datasheet, IRFP4368PBF pinout, IRFP4368PBF application, or IRFP4368PBF equivalent, key selection criteria include its 0.29 °C/W R_θJC, fully characterized avalanche SOA (430 mJ single-pulse), 380–570 nC total gate charge, and validated performance in >100 kHz synchronous rectifier topologies with low C_oss eff. (1410–1700 pF).

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve ultra-low on-resistance while maintaining robust unclamped inductive switching capability. Its gate charge profile (Q_gd = 105 nC, Q_gs = 79 nC) enables fast, controllable turn-on/turn-off transitions with minimal Miller effect-critical for ZVS/ZCS resonant converters.

The device integrates a co-packaged, low-V_SD (1.3 V @ 195 A) body diode with 130–200 ns reverse recovery time and 450–680 nC Q_rr, enabling reliable operation in bidirectional energy transfer circuits without external Schottky supplementation in many medium-power applications.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	75 V - Maximum blocking voltage before avalanche; suitable for 48 V bus systems with 50% margin.
R_DS(on) max	1.85 mΩ - Ensures ≤ 69 W conduction loss at 195 A, enabling high-efficiency thermal design.
I_D (pkg)	195 A - Package-limited continuous current; defines PCB trace and heatsink sizing baseline.
Q_g	380–570 nC - Determines gate driver power requirement and switching loss trade-off in 100–500 kHz designs.
E_AS	430 mJ - Single-pulse avalanche energy rating; validates safe operation under transient overvoltage events.
C_oss eff. (TR)	1410 pF - Time-related effective output capacitance; directly impacts dead-time losses in half-bridge configurations.
R_θJC	0.29 °C/W - Junction-to-case thermal resistance; enables direct mounting to heatsinks with predictable ΔT_J-C.

Pinout & Package

IRFP4368PBF uses the standard TO-247AC through-hole package with isolated tab (drain-connected). The case is electrically connected to the drain terminal, requiring insulated mounting hardware.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main high-current power path output	Electrically tied to metal tab; must be thermally coupled to heatsink and electrically isolated from chassis ground unless system topology requires drain-referenced sink.
Source	Power return and reference node	Serves as common return for gate drive and load current; defines local ground reference for gate driver supply and sensing.
Gate	Control input for channel modulation	High-impedance MOS control node; requires <10 Ω series resistance to damp ringing and limit peak dI/dt during switching.

Key Features

Feature	Design Value
Fully characterized avalanche SOA	Validated 430 mJ single-pulse energy and I_AR curves up to 195 A-enables reliable unclamped inductive switching without derating.
Enhanced body diode dV/dt capability	13 V/ns rated peak recovery dv/dt-reduces risk of false turn-on during commutation in synchronous rectifiers.
Low C_oss eff. (TR)	1410 pF-minimizes capacitive turn-off loss and improves zero-voltage switching margin in LLC and phase-shifted full-bridge converters.
Thermally optimized R_θJC	0.29 °C/W-supports compact heatsink designs with ≤ 50°C temperature rise at 520 W dissipation.
Lead-free construction	RoHS-compliant finish with Pb-free plating-meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1) requirements.

Applications

High-Efficiency Synchronous Rectification

Uninterruptible Power Supply (UPS)

Use Scenario: Secondary-side rectification in 1–3 kW telecom and server PSUs operating at 100–300 kHz.

IC Role / Device Role / Timing Role: High-side or low-side synchronous switch replacing Schottky diodes to reduce conduction loss and improve efficiency by ≥3%.

Use Value: 1.46 mΩ R_DS(on) cuts forward drop to <50 mV at 195 A, eliminating 100+ W of diode heat and enabling smaller heatsinks.

Use Scenario: Inverter stage and battery charging circuitry in line-interactive and online double-conversion UPS systems.

IC Role / Device Role / Timing Role: Bidirectional power switch handling both AC→DC charging and DC→AC inversion with fast body diode recovery.

Use Value: 130–200 ns t_rr and 450–680 nC Q_rr minimize reverse recovery loss during polarity reversal, improving inverter efficiency and reducing EMI.

Hard-Switched Industrial SMPS

High-Speed Motor Drive Half-Bridge

Use Scenario: Primary-side switching in 2–5 kW industrial welders, plasma cutters, and induction heating supplies.

IC Role / Device Role / Timing Role: Main switching element in hard-switched full-bridge or phase-shifted topologies with 20–100 kHz operation.

Use Value: 0.29 °C/W R_θJC and 520 W P_D allow stable operation at 100% duty cycle with forced-air cooling, avoiding thermal runaway.

Use Scenario: Low-side switch in 3–10 kW servo and spindle drives using 60–120 kHz PWM with regenerative braking.

IC Role / Device Role / Timing Role: Fast-turning power switch managing motor current direction and energy recirculation via body diode.

Use Value: 1280 A I_DM and 13 V/ns dv/dt rating support high di/dt transients during braking without parasitic turn-on or latch-up.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-ruggedness N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW75N75F6	75 V V_DSS, 180 A I_D, 1.7 mΩ R_DS(on), TO-247 long leads; lower Q_g (320 nC) but higher C_oss (2100 pF).	Better gate drive efficiency but higher switching loss in hard-switched apps above 150 kHz due to C_oss.	Prefer for lower-frequency (<100 kHz), gate-drive-limited designs where conduction loss dominates.
IXFH75N75X3	75 V V_DSS, 190 A I_D, 1.55 mΩ R_DS(on), TO-247; higher Q_gd (125 nC) and 175°C T_J rating.	Superior high-temperature reliability but increased Miller-induced switching delay in high-dV/dt environments.	Prefer for extended ambient (>105°C) or mission-critical industrial environments requiring wider thermal margin.

Compared with STW75N75F6 and IXFH75N75X3, IRFP4368PBF offers the lowest R_DS(on) (1.46 mΩ) and best balance of Q_g/C_oss for 100–300 kHz synchronous rectification, while maintaining industry-leading avalanche ruggedness (430 mJ) and body diode dV/dt immunity (13 V/ns).

Availability

IRFP4368PBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification, uninterruptible power supply, and hard-switched industrial SMPS requiring stable component supply and long-term production continuity.

Supply support for IRFP4368PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-current, high-ruggedness switching in demanding power conversion systems where thermal stability, avalanche tolerance, and body diode performance are critical.

FAQ

Is IRFP4368PBF suitable for surface-mount assembly?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per Infineon's datasheet (Rev. 2.1, p.8). It requires through-hole mounting with mechanical screw torque (1.1 N·m) and thermal interface material for heatsink attachment. Reflow soldering is not supported.

What is the maximum allowable case temperature for continuous 195 A operation?

At 195 A continuous drain current, the maximum allowable case temperature is 100°C per the "ID @ TC = 100°C" rating (250 A silicon-limited, 195 A wire-bond limited). Exceeding 100°C risks bond-wire fusing; thermal design must ensure T_C ≤ 100°C under worst-case ambient and airflow conditions.

Does IRFP4368PBF require a negative gate voltage for reliable turn-off?

No. The gate threshold voltage (V_GS(th)) ranges from 2.0 to 4.0 V, and the device fully turns off at V_GS = 0 V. However, applying –5 V to –10 V improves noise immunity in high-dV/dt environments and reduces leakage during high-temperature standby, though it is not mandatory for functional operation.

Can IRFP4368PBF replace IRFP4668 in an existing design?

Yes, with verification. IRFP4668 has identical V_DSS (75 V) and package (TO-247AC), but higher R_DS(on) (2.0 mΩ max) and lower I_D (180 A). IRFP4368PBF offers lower conduction loss and higher current capability, but its higher Q_g (570 nC vs. 480 nC) may increase gate drive demand-layout and driver strength should be rechecked.

IRFP4368PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 75 V

Current - Continuous Drain (Id) @ 25°C:: 195A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 1.85mOhm @ 195A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 570 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 19230 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 520W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4368PBF FAQ

1.How can I place an order for IRFP4368PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4368PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4368PBF reliable?

The price and inventory of IRFP4368PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4368PBF is usually 5 days.

3.What payment methods are accepted for IRFP4368PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4368PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4368PBF?

IRFP4368PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4368PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4368PBF?

For technical support, including IRFP4368PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4368PBF requirements.

6.How does Aetrix verify that IRFP4368PBF is sourced from the original manufacturer or authorized distributors?

All IRFP4368PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4368PBF meets industry standards.

7.What is the process for return or replacement of IRFP4368PBF?

All IRFP4368PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4368PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4368PBF part is unused and in its original packaging.

Return procedure for IRFP4368PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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