Infineon Technologies IRFP4410ZPBF

Overview

IRFP4410ZPBF from Infineon Technologies (formerly International Rectifier) is a 100V, 97A N-channel enhancement-mode HEXFET Power MOSFET in TO-247AC package, optimized for high-efficiency synchronous rectification and hard-switched SMPS topologies. It features 7.2 mΩ typical R_DS(on), 83 nC total gate charge, and enhanced body diode dV/dt and dI/dt capability for robust unclamped inductive switching in UPS and telecom power systems.

For engineers reviewing the IRFP4410ZPBF datasheet, IRFP4410ZPBF pinout, IRFP4410ZPBF application, or IRFP4410ZPBF equivalent, key selection criteria include its 100V V_DSS, 97A continuous drain current at T_C = 25°C, 0.65°C/W junction-to-case thermal resistance, avalanche-rated operation up to 300 mJ, and validated performance in high-frequency (>100 kHz), high-current DC-DC converters.

Technical Context

This MOSFET employs planar silicon-gate technology with optimized cell layout to deliver low conduction loss and fast switching dynamics. Its 4820 pF input capacitance (C_iss) and 27 nC Miller charge (Q_gd) support stable gate drive in high-side configurations with moderate gate resistance (R_G = 2.7 Ω recommended).

The integrated body diode exhibits 38–57 ns reverse recovery time (t_rr) and 53–80 nC reverse recovery charge (Q_rr) at 58 A, enabling reliable synchronous rectification without external Schottky assistance in 48 V–65 V output stages.

Key Specifications

Pinout & Package

IRFP4410ZPBF is housed in a TO-247AC package with isolated tab (drain-connected), standard lead spacing, and through-hole mounting. The case is electrically connected to the drain terminal and must be thermally coupled to heatsink via insulating washer or thermal pad when isolation is required.

Key Features

Applications

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 100V power MOSFET applications.

Compared with STW90NF10 and IXFH110N10P, IRFP4410ZPBF delivers optimal balance of low R_DS(on), moderate Q_g, and guaranteed avalanche ruggedness-making it the preferred choice for industrial SMPS where reliability under transient overloads is non-negotiable.

Availability

IRFP4410ZPBF is available at Aetrix Electronics and suitable for high-efficiency synchronous rectification in SMPS, uninterruptible power supply (UPS) inverters, and hard-switched high-frequency power conversion requiring stable component supply across multi-year production cycles.

Supply support for IRFP4410ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and qualification infrastructure.

This device belongs to Infineon's HEXFET Power MOSFET product line, engineered specifically for high-reliability industrial power conversion where thermal stability, avalanche tolerance, and body diode robustness are critical design requirements.

FAQ

Is IRFP4410ZPBF suitable for surface-mount assembly?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per Infineon's datasheet (03/08 revision). It requires through-hole mounting with mechanical screw torque of 10 lb·in (1.1 N·m) and flat greased interface to ensure thermal and electrical integrity. Reflow soldering risks die attach delamination and voiding.

What is the maximum allowable gate voltage for reliable operation?

The absolute maximum gate-to-source voltage is ±20 V. Operation above +20 V risks irreversible oxide breakdown, while sustained negative gate bias below –20 V can cause threshold shift. For robust switching, gate drive should be limited to +10 V to +15 V with fast fall time (<50 ns) to minimize Miller-induced shoot-through.

Does IRFP4410ZPBF require a gate resistor for stability?

Yes. A 2.7 Ω gate resistor is recommended per Figure 23a test circuit to dampen ringing and limit peak gate current during 83 nC charge/discharge. Lower values increase switching speed but risk oscillation; higher values degrade turn-on/turn-off times and raise switching losses disproportionately.

Can IRFP4410ZPBF replace IRFP440ZPBF in existing designs?

Yes, with verification. IRFP4410ZPBF offers identical pinout, package, and voltage rating but improves R_DS(on) from 9.0 mΩ (IRFP440ZPBF max) to 7.2 mΩ (typ), reduces Q_g from 105 nC to 83 nC, and adds enhanced avalanche characterization. Thermal and layout compatibility is maintained, but gate drive timing may require minor adjustment.