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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4568PBF

Name: IRFP4568PBF
Brand: Infineon Technologies
SKU: IRFP4568PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4568PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4568PBF.pdf

Description:: MOSFET N-CH 150V 171A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP4568PBF from Infineon Technologies is a 150V, 171A N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-frequency hard-switching and synchronous rectification. It delivers 4.8 mΩ typical R_DS(on) at V_GS = 10 V, 151 nC total gate charge, and 763 mJ single-pulse avalanche energy-enabling robust operation in UPS and high-efficiency SMPS primary/secondary side switching.

For engineers reviewing the IRFP4568PBF datasheet, IRFP4568PBF pinout, IRFP4568PBF application, or IRFP4568PBF equivalent, key selection criteria include its 18.5 V/ns peak diode recovery dv/dt rating, fully characterized C_oss eff. (ER) of 897 pF, enhanced body diode dI/dt capability, and thermal resistance R_θJC of 0.29 °C/W for high-power thermal management.

Technical Context

This MOSFET employs planar silicon technology with optimized cell layout to achieve low conduction loss and high dynamic ruggedness. Its gate charge profile (Q_g = 151–227 nC, Q_gd = 55 nC) supports fast, controllable switching in hard-switched topologies while maintaining low Miller-induced oscillation risk.

The device features fully characterized unclamped inductive switching (UIS) behavior, with thermally limited E_AS = 763 mJ and I_AR = 103 A under defined test conditions. Its body diode exhibits t_rr = 110 ns (T_J = 25°C) and Q_rr = 515 nC, enabling reliable reverse recovery in synchronous rectifier configurations.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - Maximum blocking voltage before avalanche onset; defines usable bus voltage headroom in 120 VAC-derived DC-link designs.
R_DS(on) typ.	4.8 mΩ @ V_GS = 10 V, I_D = 103 A - Directly determines conduction loss (P_cond ≈ I² × R) in high-current output stages.
Q_g	151–227 nC - Governs gate drive power and switching speed; impacts driver IC selection and dead-time optimization.
t_rr	110 ns @ T_J = 25°C - Critical for minimizing reverse recovery losses and EMI in synchronous rectifiers.
E_AS	763 mJ - Single-pulse avalanche energy limit; sets safe operating margin during transient overvoltage events.
R_θJC	0.29 °C/W - Enables precise junction temperature estimation under 517 W max power dissipation at T_C = 25°C.
dv/dt (diode)	18.5 V/ns - Minimum rate of voltage rise the body diode can sustain without spurious turn-on; essential for ZVS/ZCS circuit stability.

Pinout & Package

IRFP4568PBF uses the industry-standard TO-247AC package: isolated tab (drain), three leads in line (G–D–S), with drain electrically connected to the metal tab for direct heatsink mounting. Not recommended for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
G (Gate)	Control electrode	Receives 10 V logic-level drive to fully enhance channel; internal R_G = 1.0 Ω affects gate ringing susceptibility.
D (Drain)	High-side current path terminal	Connected to metal tab; must be electrically isolated from heatsink unless system design permits common-drain configuration.
S (Source)	Reference node for gate drive and current sensing	Provides return path for load current and gate drive loop; low-inductance layout critical for dI/dt stability.

Key Features

Feature	Design Value
Enhanced body diode dI/dt capability	Supports >360 A/µs di/dt without parasitic turn-on-critical for high-frequency synchronous rectification in LLC resonant converters.
Fully characterized avalanche SOA	Thermally validated UIS performance up to 763 mJ enables reliable operation under inductive fault transients without derating.
Low C_oss eff. (ER)	897 pF - Reduces turn-off energy loss (E_off ∝ V² × C_oss) in hard-switched PFC and DC-DC stages.
Improved dynamic dV/dt ruggedness	18.5 V/ns rated diode recovery dv/dt prevents false triggering during rapid voltage transitions in high-side switch applications.

Applications

UPS Inverter Stage

Server PSU Primary Switch

Use Scenario: Bidirectional 150 V DC bus switching in double-conversion online UPS with 5–10 kHz PWM frequency.

IC Role / Device Role / Timing Role: High-side power switch handling 100+ A continuous current and 684 A pulsed surge during battery backup transition.

Use Value: 4.8 mΩ R_DS(on) minimizes conduction loss at full load; 763 mJ E_AS ensures survivability during grid-fault-induced inductive kickback.

Use Scenario: Active clamp forward or phase-shifted full-bridge primary-side switch in 3 kW server power supply.

IC Role / Device Role / Timing Role: Main switching element operating at 100–300 kHz with hard-switched gate drive and high dI/dt demands.

Use Value: Low Q_gd/Q_g ratio (55/151 nC) improves controllability; 18.5 V/ns dv/dt rating suppresses Miller-induced shoot-through during voltage transitions.

Industrial SMPS Output Rectifier

Motor Drive Half-Bridge Leg

Use Scenario: Synchronous rectification in 48 V/100 A telecom rectifier module with forced-air cooling.

IC Role / Device Role / Timing Role: Low-side synchronous FET replacing Schottky diode; commutated at 200–500 kHz with zero-voltage switching assist.

Use Value: 110 ns t_rr and 515 nC Q_rr reduce reverse recovery loss and EMI; low R_DS(on) cuts conduction loss by >60% vs. 40 V Schottky alternatives.

Use Scenario: 150 V bus motor drive for HVAC compressors or industrial pumps with 10–20 kHz PWM.

IC Role / Device Role / Timing Role: Upper/lower leg switch in half-bridge topology; subjected to repetitive inductive switching and body diode commutation.

Use Value: Fully characterized avalanche SOA allows safe operation during motor stall or short-circuit events; 0.29 °C/W R_θJC enables compact heatsink design at 121 A @ T_C = 100°C.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current 150 V power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW100N150F7	150 V, 100 A, R_DS(on) = 5.2 mΩ, Q_g = 134 nC, TO-247 long leads	Lower current rating; optimized for higher-frequency switching with lower Q_gd	Preferred where gate drive loss dominates and peak current ≤100 A.
IXFH180N15X5	150 V, 180 A, R_DS(on) = 4.0 mΩ, Q_g = 240 nC, TO-247 non-isolated	Higher current and lower R_DS(on), but larger gate charge increases drive complexity	Chosen when conduction loss is critical and gate drive capability supports 240 nC.

Compared with STW100N150F7 and IXFH180N15X5, IRFP4568PBF offers balanced trade-offs: superior current rating versus ST's part and lower Q_g than IXYS's device-making it optimal for 120–170 A hard-switched SMPS where thermal and drive constraints coexist.

Availability

IRFP4568PBF is available at Aetrix Electronics and suitable for uninterruptible power supplies, high-efficiency server PSUs, and industrial motor drives requiring stable component supply across multi-year production cycles.

Supply support for IRFP4568PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFP4568PBF belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-reliability, high-power-density switching in mission-critical AC-DC and DC-DC conversion systems.

FAQ

Is IRFP4568PBF suitable for surface-mount assembly?

No. The TO-247AC package is explicitly not recommended for surface-mount applications per Infineon's datasheet (Rev. 2.1, p.8). It requires through-hole mounting with mechanical screw attachment and thermal interface material to a heatsink for reliable thermal performance.

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current at T_C = 100°C is 121 A, as specified in the Absolute Maximum Ratings table (ID @ TC = 100°C, V_GS = 10 V). This value reflects silicon-limited current with linear derating applied above 25°C.

Does IRFP4568PBF have a built-in gate protection diode?

No. IRFP4568PBF does not integrate a gate protection Zener or clamp diode. External gate-source TVS (e.g., 18 V) is recommended to prevent damage from V_GS exceeding ±30 V, especially in high-noise industrial environments.

Can IRFP4568PBF replace IRFP4668 in existing designs?

Not directly. While both are 150 V TO-247 MOSFETs, IRFP4668 has R_DS(on) = 3.8 mΩ and Q_g = 200 nC-lower on-resistance but higher gate charge. Layout, gate drive strength, and thermal design must be revalidated; no pin-to-pin or electrical drop-in compatibility is guaranteed.

IRFP4568PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 171A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 103A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 227 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 10470 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 517W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4568PBF FAQ

1.How can I place an order for IRFP4568PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4568PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4568PBF reliable?

The price and inventory of IRFP4568PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4568PBF is usually 5 days.

3.What payment methods are accepted for IRFP4568PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4568PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4568PBF?

IRFP4568PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4568PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4568PBF?

For technical support, including IRFP4568PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4568PBF requirements.

6.How does Aetrix verify that IRFP4568PBF is sourced from the original manufacturer or authorized distributors?

All IRFP4568PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4568PBF meets industry standards.

7.What is the process for return or replacement of IRFP4568PBF?

All IRFP4568PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4568PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4568PBF part is unused and in its original packaging.

Return procedure for IRFP4568PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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