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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP4568PBFXKMA1

Name: IRFP4568PBFXKMA1
Brand: Infineon Technologies
SKU: IRFP4568PBFXKMA1
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP4568PBFXKMA1

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP4568PBFXKMA1.pdf

Description:: TRENCH >=100V PG-TO247-3

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP4568PBFXKMA1 from Infineon Technologies is a 150V, 171A N-channel enhancement-mode Power MOSFET in TO-247AC package, optimized for high-frequency hard-switched SMPS and synchronous rectification. It delivers 4.8 mΩ typ. R_DS(on) at V_GS = 10 V, 151 nC total gate charge, and 763 mJ single-pulse avalanche energy - enabling robust operation in UPS and telecom power stages.

For engineers reviewing the IRFP4568PBFXKMA1 datasheet, IRFP4568PBFXKMA1 pinout, IRFP4568PBFXKMA1 application, or IRFP4568PBFXKMA1 equivalent, key selection criteria include its 18.5 V/ns peak diode recovery dv/dt rating, fully characterized C_oss eff. (ER) of 897 pF, body diode t_rr of 110 ns at 25°C, and thermal resistance R_θJC of 0.29 °C/W for high-power thermal management.

Technical Context

This HEXFET® device uses planar stripe silicon technology with optimized cell pitch and trench-assisted edge termination to achieve high dV/dt ruggedness and low gate charge. Its dynamic parameters - including Q_gd = 55 nC and C_rss = 203 pF - support fast switching with reduced Miller-induced shoot-through risk in bridge configurations.

The body diode is fully rated for 171 A continuous source current and exhibits enhanced dI/dt capability up to 360 A/µs. Avalanche SOA is thermally bounded with validated E_AS curves across pulse width and temperature, supporting unclamped inductive switching in industrial motor drives and DC-DC converters.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	150 V - maximum blocking voltage before avalanche onset; supports 120 V bus designs with 25% margin
R_DS(on) typ.	4.8 mΩ at V_GS = 10 V, I_D = 103 A - enables <1.2 W conduction loss at 100 A in full-bridge phase-leg
Q_g	151 nC max - determines gate driver current requirement (~1.5 A avg. for 100 ns turn-on)
t_rr	110 ns at T_J = 25°C - defines minimum dead-time needed to prevent cross-conduction in synchronous rectifiers
E_AS	763 mJ single-pulse - allows safe energy absorption during unclamped inductive turn-off without junction overheating
R_θJC	0.29 °C/W - enables 517 W dissipation at ΔT = 150°C case-to-junction rise, critical for forced-air-cooled 3 kW PSUs
dv/dt (diode)	18.5 V/ns - ensures reliable commutation under fast voltage transients in ZVS/ZCS topologies

Pinout & Package

IRFP4568PBFXKMA1 is housed in a through-hole TO-247AC package with isolated tab (drain-connected), standard lead form, and 1.1 N·m mounting torque specification. The package is not suitable for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path and thermal interface	Electrically connected to metal tab; requires insulated mounting hardware when referenced to non-ground potentials
Source	Reference node for gate drive and current sensing	Low-inductance connection point for Kelvin source routing in high-di/dt applications
Gate	Control terminal for channel modulation	High-impedance input requiring low-ESR gate resistor (1–5 Ω typical) to damp ringing and control dV/dt

Key Features

Feature	Design Value
Fully characterized avalanche SOA	Validated E_AS vs. I_AS and T_J curves enable deterministic unclamped inductive switching design
Enhanced body diode dI/dt capability	Rated for 360 A/µs recovery di/dt - reduces risk of snap-off failure in hard-commutated PFC stages
Improved dynamic dV/dt ruggedness	18.5 V/ns peak diode recovery rating - supports stable operation in >500 kHz resonant LLC converters
Low C_oss eff. (ER)	897 pF - minimizes turn-off energy loss (E_off ∝ V² × C_oss) in high-voltage switching nodes
Lead-free construction	RoHS-compliant materials and finish - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1)

Applications

Telecom Rectifier Modules

Uninterruptible Power Supplies (UPS)

Use Scenario: 48 V input, 12 V output synchronous buck converter operating at 300 kHz in telecom shelf power.

IC Role / Device Role / Timing Role: High-side power switch with Kelvin source sensing for precise current regulation.

Use Value: 4.8 mΩ R_DS(on) reduces conduction loss by 35% vs. legacy 6.5 mΩ MOSFETs, improving full-load efficiency to >95.2%.

Use Scenario: Bidirectional DC-DC stage in online double-conversion UPS handling 3 kVA battery backup.

IC Role / Device Role / Timing Role: Low-side synchronous rectifier in interleaved phase-shifted full-bridge topology.

Use Value: 110 ns t_rr and 515 nC Q_rr minimize reverse recovery loss and EMI during battery discharge cycles.

Industrial Motor Drives

Server PSU Primary Switches

Use Scenario: 200 V DC link inverter driving 7.5 kW induction motor with field-oriented control.

IC Role / Device Role / Timing Role: Phase-leg high-side switch subjected to repetitive unclamped inductive switching.

Use Value: 763 mJ E_AS and validated avalanche SOA allow safe operation without snubbers in regenerative braking events.

Use Scenario: Primary-side switch in 3.3 kW server power supply using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: Hard-switched main power transistor with 150 V blocking requirement and 100 kHz+ operation.

Use Value: 151 nC Q_g and 55 nC Q_gd reduce gate drive losses and improve controllability under high dv/dt conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-ruggedness N-channel MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF20	200 V V_DSS, 90 A I_D, 12.5 mΩ R_DS(on), TO-247 package	Higher voltage rating but lower current and higher on-resistance - suited for 175 V bus systems with lower power density needs	Select when 200 V blocking is mandatory and 171 A current is not required; avoid in 150 V, >3 kW designs due to conduction loss penalty
IXFH180N15T2	150 V V_DSS, 180 A I_D, 3.8 mΩ R_DS(on), TO-247PLUS package	Lower R_DS(on) and higher current rating, but larger die size increases Q_g to 210 nC - demands stronger gate drivers	Prefer for ultra-low-loss 150 V primary switches where gate drive capability supports >2 A peak; verify layout for increased Miller charge

Compared with STW90NF20 and IXFH180N15T2, IRFP4568PBFXKMA1 offers optimal balance of 150 V rating, 4.8 mΩ conduction, 151 nC gate charge, and proven avalanche ruggedness - making it preferred for space-constrained, high-efficiency 1–5 kW SMPS where thermal margin and reliability under transient stress are critical.

Availability

IRFP4568PBFXKMA1 is available at Aetrix Electronics and suitable for telecom rectifier modules, uninterruptible power supplies, and industrial motor drives requiring stable component supply and long-term production continuity.

Supply support for IRFP4568PBFXKMA1 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with over 30 years of MOSFET innovation.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding industrial and infrastructure applications.

FAQ

Is IRFP4568PBFXKMA1 RoHS-compliant and halogen-free?

Yes. IRFP4568PBFXKMA1 is lead-free and RoHS-compliant per Directive 2011/65/EU, with halogen-free packaging meeting IEC 61249-2-21 standards. The TO-247AC package uses matte tin-plated leads and green molding compound, certified to JEDEC J-STD-020 MSL-1.

What is the maximum recommended gate voltage for reliable operation?

The absolute maximum V_GS is ±30 V, but Infineon specifies 10 V as the nominal drive voltage for full R_DS(on) characterization. Operation above 15 V increases gate oxide stress and accelerates wear-out; sustained use beyond 20 V voids warranty and risks premature failure.

Can IRFP4568PBFXKMA1 be used in parallel configurations?

Yes, but only with matched devices and symmetrical PCB layout. Its positive R_DS(on) temperature coefficient (0.17 V/°C) enables current sharing, provided gate drive impedance, source inductance, and thermal coupling are balanced. Derate total current by 15% versus single-device rating.

Does this MOSFET require a negative gate turn-off voltage?

No. IRFP4568PBFXKMA1 has no requirement for negative V_GS during turn-off. Its gate threshold voltage (3.0–5.0 V) and low gate leakage (<100 nA at –20 V) ensure clean turn-off with 0 V gate drive. Negative bias may improve noise immunity in EMI-heavy environments but is not necessary for functional reliability.

IRFP4568PBFXKMA1 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 150 V

Current - Continuous Drain (Id) @ 25°C:: 171A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 5.9mOhm @ 103A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 227 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 10470 pF @ 50 V

FET Feature:: -

Power Dissipation (Max):: 517W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP4568PBFXKMA1 FAQ

1.How can I place an order for IRFP4568PBFXKMA1 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP4568PBFXKMA1 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP4568PBFXKMA1 reliable?

The price and inventory of IRFP4568PBFXKMA1 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP4568PBFXKMA1 is usually 5 days.

3.What payment methods are accepted for IRFP4568PBFXKMA1?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP4568PBFXKMA1 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP4568PBFXKMA1?

IRFP4568PBFXKMA1 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP4568PBFXKMA1 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP4568PBFXKMA1?

For technical support, including IRFP4568PBFXKMA1 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP4568PBFXKMA1 requirements.

6.How does Aetrix verify that IRFP4568PBFXKMA1 is sourced from the original manufacturer or authorized distributors?

All IRFP4568PBFXKMA1 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP4568PBFXKMA1 meets industry standards.

7.What is the process for return or replacement of IRFP4568PBFXKMA1?

All IRFP4568PBFXKMA1 units undergo pre-shipment inspection (PSI). If there is an issue with IRFP4568PBFXKMA1, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP4568PBFXKMA1 part is unused and in its original packaging.

Return procedure for IRFP4568PBFXKMA1:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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