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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFP90N20DPBF

Name: IRFP90N20DPBF
Brand: Infineon Technologies
SKU: IRFP90N20DPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFP90N20DPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-247-3

Datasheet:: IRFP90N20DPBF.pdf

Description:: MOSFET N-CH 200V 94A TO247AC

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFP90N20DPBF from Infineon Technologies is a 200V, 94A (T_C = 25°C), N-channel enhancement-mode power MOSFET in TO-247AC package, optimized for high-frequency DC-DC converters and hard-switched SMPS. It features R_DS(on) ≤ 0.023 Ω at V_GS = 10 V, 180–270 nC total gate charge, and fully characterized avalanche capability (E_AS = 1010 mJ).

For engineers reviewing the IRFP90N20DPBF datasheet, IRFP90N20DPBF pinout, IRFP90N20DPBF application, or IRFP90N20DPBF equivalent, key selection criteria include its low Q_gd/Q_gs ratio for reduced switching loss, effective C_oss of 870 pF for accurate soft-switching design, and validated unclamped inductive switching performance up to 56 A.

Technical Context

This HEXFET® power MOSFET employs planar stripe cell structure with optimized gate oxide and drift region doping to achieve simultaneous low R_DS(on) and high dV/dt immunity (6.7 V/ns). Its body diode exhibits trr = 230–340 ns and Q_rr = 1.9–2.8 µC under 100 A/µs di/dt, enabling efficient synchronous rectification in phase-shifted full-bridge topologies.

The device is rated for continuous operation up to T_J = 175°C with R_θJC = 0.26°C/W, and supports repetitive avalanche energy (E_AR) of 58 mJ - verified per JEDEC JESD24-11 using L = 0.64 mH, R_G = 25 Ω, I_AS = 56 A, starting at 25°C junction temperature.

Key Specifications

Parameter	Value and Actual Design Meaning
V_BRDSS	200 V - Withstands 200 V drain-source blocking voltage before avalanche onset, enabling use in 176 V_RMS AC-input PFC stages.
R_DS(on) max	0.023 Ω - Enables <1.3 W conduction loss at 75 A DC, critical for high-current output rails in telecom rectifiers.
Q_g typ/max	180–270 nC - Determines gate driver power requirement and switching speed; lower Q_gd/Q_gs ratio improves Miller immunity.
E_AS	1010 mJ - Single-pulse avalanche energy rating validates robustness against inductive turn-off transients in motor drives.
C_oss.eff	870 pF - Fixed capacitance modeling actual V_DS rise time from 0 to 160 V, essential for ZVS timing calculation in LLC resonant converters.
trr / Q_rr	230–340 ns / 1.9–2.8 µC - Body diode recovery metrics directly impact shoot-through risk and dead-time optimization in half-bridge configurations.
R_θJC	0.26°C/W - Enables 580 W dissipation with ≤150°C case-to-junction delta; requires ≥0.24°C/W case-to-sink thermal interface for full rating.

Pinout & Package

IRFP90N20DPBF uses the industry-standard TO-247AC package: isolated tab (drain), three leads - Gate (G), Drain (D), Source (S) - with mechanical mounting via M3 screw (1.1 N·m torque). Not suitable for surface-mount assembly.

Pin/Terminal	Circuit Role	Design Meaning
Lead 1 (left)	Source (S)	Low-side reference node; connects to PCB ground plane and source of synchronous FET in buck/phase-shifted topologies.
Lead 2 (center)	Gate (G)	High-impedance control input; requires 10 V drive for full enhancement; sensitive to ESD (±30 V absolute max rating).
Lead 3 (right)	Drain (D)	High-voltage power terminal; electrically connected to metal tab; must be isolated from heatsink unless referenced to same potential.
Metal Tab	Drain (D)	Primary thermal path to heatsink; electrically identical to Lead 3; requires insulating pad if heatsink is grounded.

Key Features

Feature	Design Value
Low Q_gd/Q_gs ratio	Typical 1.93 (87 nC / 45 nC) - Reduces Miller-induced false turn-on during high dV/dt switching, improving reliability in fast-switching converters.
Fully characterized C_oss.eff	870 pF across 0–160 V - Enables precise zero-voltage switching point prediction without iterative simulation or empirical tuning.
Lead-free TO-247AC	RoHS-compliant finish with SnAgCu plating - Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); no pre-bake required for assembly.
Validated avalanche performance	E_AR = 58 mJ (repetitive), E_AS = 1010 mJ (single-pulse) - Confirmed per JEDEC test conditions, supporting unclamped inductive load handling in UPS and servo amplifiers.
Body diode trr consistency	230–340 ns over 25–150°C - Enables stable dead-time setting across operating temperature range in bidirectional DC-DC applications.

Applications

Telecom Rectifier Modules

Industrial Motor Drives

Use Scenario: 48 V output, 1200 W telecom rectifier with active clamp forward topology operating at 250 kHz.

IC Role / Device Role / Timing Role: Primary-side high-side switch handling 94 A peak current; synchronized with secondary-side SiC Schottky rectifiers.

Use Value: Low R_DS(on) reduces conduction loss by 22% vs. legacy 30 mΩ devices; validated avalanche withstand prevents failure during output short-circuit events.

Use Scenario: 3-phase inverter stage in HVAC compressor drive rated for 5 kW continuous output.

IC Role / Device Role / Timing Role: Low-side IGBT replacement in 16 kHz PWM bridge leg; operated with 10 V gate drive and 1.2 Ω series resistor.

Use Value: 380 A pulsed drain current supports 3× overload peaks; trr < 340 ns enables 200 ns dead-time without shoot-through risk.

Server PSU (LLC Resonant)

EV Onboard Charger (OBC)

Use Scenario: Primary-side switching FET in 3.3 kW server power supply using asymmetric LLC topology.

IC Role / Device Role / Timing Role: ZVS-capable main switch; leverages C_oss.eff = 870 pF to tune resonant tank for 300–500 kHz operation.

Use Value: Effective C_oss matching simplifies resonant capacitor selection; 6.7 V/ns dv/dt rating ensures noise immunity in high-density layouts.

Use Scenario: Isolated DC-DC stage in 6.6 kW bidirectional OBC converting 400 V battery to 400 V HV bus.

IC Role / Device Role / Timing Role: High-side switch in dual-active-bridge (DAB) converter; subjected to 100 A/µs di/dt during reverse conduction.

Use Value: Q_rr = 1.9–2.8 µC minimizes reverse recovery loss; 58 mJ repetitive avalanche energy protects against transient overvoltage during grid fault conditions.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, high-voltage power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF20	R_DS(on) = 0.022 Ω (typ), Q_g = 220 nC (max), E_AS = 820 mJ	Lacks published C_oss.eff; trr = 290 ns (typ) but no Q_rr min/max spec	Preferred where lower R_DS(on) dominates and C_oss-based ZVS design is not required.
IXFH90N20X3	R_DS(on) = 0.020 Ω (typ), Q_g = 155 nC (max), E_AS = 950 mJ, TO-247-3L	Enhanced dv/dt immunity (10 V/ns), but no published repetitive avalanche data	Better for ultra-fast switching (>1 MHz) with strict Miller immunity needs; less suited for repetitive avalanche stress.

Compared with STW90NF20 and IXFH90N20X3, IRFP90N20DPBF uniquely provides both fully specified C_oss.eff and JEDEC-validated repetitive avalanche energy - making it optimal for designs requiring predictable ZVS behavior and field-reliable fault tolerance in industrial power systems.

Availability

IRFP90N20DPBF is available at Aetrix Electronics and suitable for telecom rectifiers, industrial motor drives, server PSUs, and EV onboard chargers requiring stable component supply, long-term lifecycle support, and traceable sourcing.

Supply support for IRFP90N20DPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability switching in demanding power conversion systems - particularly those requiring robust avalanche performance and precise dynamic parameter characterization.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The maximum continuous drain current for IRFP90N20DPBF at T_C = 100°C is 66 A when driven with V_GS = 10 V. This rating assumes proper heatsinking to maintain junction temperature ≤175°C and accounts for thermal derating of 3.8 W/°C beyond 25°C case temperature.

Is IRFP90N20DPBF suitable for synchronous rectification?

Yes - its body diode has trr = 230–340 ns and Q_rr = 1.9–2.8 µC at 100 A/µs di/dt, enabling reliable synchronous rectification in high-frequency DC-DC converters. However, dedicated SR controllers must account for V_SD = 1.5 V forward drop and temperature-dependent trr variation.

Does this MOSFET require a gate resistor for safe operation?

A gate resistor is mandatory to control dI/dt and prevent oscillation. The datasheet specifies t_d(off) and t_f measured with R_G = 1.2 Ω. For hard-switched applications, 5–15 Ω is typical; for ZVS topologies, higher values (22–47 Ω) may be used to reduce ringing while maintaining acceptable switching speed.

Can IRFP90N20DPBF be mounted directly to a grounded heatsink?

No - the metal tab is electrically connected to the drain terminal. Mounting to a grounded heatsink creates a short circuit unless an electrically isolating thermal pad (e.g., mica or ceramic) rated for ≥200 V isolation is used. TO-247AC does not provide internal isolation.

IRFP90N20DPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-247-3

Packaging:: Tube

Product Status:: Active

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 200 V

Current - Continuous Drain (Id) @ 25°C:: 94A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 23mOhm @ 56A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 270 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6040 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 580W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: TO-247AC

IRFP90N20DPBF FAQ

1.How can I place an order for IRFP90N20DPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFP90N20DPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFP90N20DPBF reliable?

The price and inventory of IRFP90N20DPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFP90N20DPBF is usually 5 days.

3.What payment methods are accepted for IRFP90N20DPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFP90N20DPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFP90N20DPBF?

IRFP90N20DPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFP90N20DPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFP90N20DPBF?

For technical support, including IRFP90N20DPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFP90N20DPBF requirements.

6.How does Aetrix verify that IRFP90N20DPBF is sourced from the original manufacturer or authorized distributors?

All IRFP90N20DPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFP90N20DPBF meets industry standards.

7.What is the process for return or replacement of IRFP90N20DPBF?

All IRFP90N20DPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFP90N20DPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFP90N20DPBF part is unused and in its original packaging.

Return procedure for IRFP90N20DPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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