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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFPS3810

Name: IRFPS3810
Brand: Infineon Technologies
SKU: IRFPS3810
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS3810

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS3810.pdf

Description:: MOSFET N-CH 100V 170A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS3810 from Infineon Technologies (formerly International Rectifier) is a 100 V, 170 A N-channel enhancement-mode Power MOSFET in Super-247™ package, optimized for high-current DC-DC converters, motor drives, and UPS systems. It delivers R_DS(on) = 9 mΩ at V_GS = 10 V, supports 670 A pulsed drain current, and is fully avalanche-rated with E_AS = 1350 mJ.

For engineers reviewing the IRFPS3810 datasheet, IRFPS3810 pinout, IRFPS3810 application, or IRFPS3810 equivalent, key selection criteria include its low conduction loss at high ID, fast switching (t_r = 270 ns, t_f = 140 ns), rugged unclamped inductive switching capability, and thermal resistance R_θJC = 0.26 °C/W - critical for high-power industrial power stages.

Technical Context

This device employs advanced HEXFET® silicon processing to achieve ultra-low on-resistance per die area while maintaining robust safe operating area (SOA) up to 100 V and 170 A at T_C = 25°C. Its gate charge profile (Q_g = 260–390 nC, Q_gd = 160–250 nC) enables efficient hard-switching in synchronous rectifiers and half-bridge topologies.

The integrated body diode exhibits t_rr = 220–330 ns and Q_rr = 1640–2460 nC at I_F = 100 A, supporting moderate-frequency freewheeling in buck and LLC converters. Its dv/dt immunity of 2.3 V/ns and rated operation to T_J = +175°C ensure reliability in demanding industrial environments.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche; defines use in ≤48 V input bus systems with 2× safety margin.
R_DS(on)	9 mΩ @ V_GS = 10 V, I_D = 100 A - Enables <1.7 W conduction loss at 170 A continuous, reducing heatsink requirements.
I_D (T_C = 25°C)	170 A - Continuous current rating at case temperature 25°C; limited by package thermal capacity, not silicon.
E_AS	1350 mJ - Single-pulse avalanche energy; allows reliable operation under inductive turn-off transients without external snubbers.
Q_g	260–390 nC - Total gate charge determines driver power and switching loss; requires ≥2 A peak gate driver for 100 kHz+ operation.
R_θJC	0.26 °C/W - Junction-to-case thermal resistance; enables direct mounting to cold plates for >500 W dissipation with ΔT < 150°C.
t_r/t_f	270 ns / 140 ns - Rise/fall times at V_DD = 50 V, I_D = 100 A, R_G = 1.03 Ω; sets practical upper limit for hard-switching frequency.

Pinout & Package

IRFPS3810 uses the Super-247™ (JEDEC TO-274AA) package - a high-current variant of TO-247 with dual drain leads and enhanced thermal path. The package features isolated metal tab (drain-connected), flat mounting surface, and 3.8 mm creepage distance.

Pin/Terminal	Circuit Role	Design Meaning
1 – Gate	Control terminal	High-impedance MOS gate requiring low-inductance drive; sensitive to ESD (±30 V max); connects to PWM controller output.
2 – Drain	Power output node	Internally connected to metal tab; primary high-side or low-side switching node; must be electrically isolated from heatsink unless referenced to system ground.
3 – Source	Reference node	Common return for gate drive and load current; establishes local ground reference for gate driver; carries full load current (170 A).
4 – Drain (second lead)	Parallel drain connection	Reduces source inductance and improves current sharing; used with Pin 2 to minimize loop inductance in high-di/dt applications.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9 mΩ enables <1.7 W conduction loss at 170 A, reducing thermal stress in compact power modules.
Full avalanche rating	1350 mJ single-pulse energy allows reliable operation during unclamped inductive switching without derating.
Enhanced SOA	Rated for 170 A at 100 V in linear region (Fig 8); supports active current limiting and soft-start in motor control.
Optimized gate charge ratio	Q_gd/Q_g ≈ 60% minimizes Miller-induced shoot-through risk in bridge configurations.
High-temperature operation	Rated to T_J = +175°C with stable R_DS(on) drift (0.11 V/°C coefficient); suitable for sealed industrial enclosures.

Applications

Industrial Motor Drives

Server PSU Primary Switch

Use Scenario: 3-phase inverter stage in 5–15 kW servo drives operating at 8–20 kHz PWM frequency.

IC Role / Device Role / Timing Role: Low-side switching element in IGBT/MOSFET hybrid inverter; handles 120 A RMS phase current with forced air cooling.

Use Value: 9 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 12 mΩ devices, enabling 20% higher power density at same thermal budget.

Use Scenario: Primary-side switch in 1.5 kW server AC-DC front-end using asymmetric half-bridge topology.

IC Role / Device Role / Timing Role: High-current, high-voltage switching transistor handling 100 A peak drain current at 400 V bus.

Use Value: 1350 mJ avalanche rating eliminates need for external clamping circuits during line surge events, simplifying BOM.

Uninterruptible Power Supply (UPS)

EV Onboard Charger (OBC) DC-DC Stage

Use Scenario: Bidirectional DC-DC converter in 3 kVA double-conversion UPS with 48 V battery bank and 380 V DC bus.

IC Role / Device Role / Timing Role: Synchronous rectifier in isolated LLC resonant stage; conducts 170 A continuous in forward direction.

Use Value: Body diode t_rr = 220 ns and Q_rr = 1640 nC reduce reverse recovery loss by 40% vs. standard MOSFETs, improving efficiency at 200 kHz.

Use Scenario: High-efficiency 3.3 kW bidirectional DC-DC converter in 400 V/48 V OBC architecture.

IC Role / Device Role / Timing Role: Primary-side switch in phase-shifted full-bridge; operates with ZVS at 100 kHz, handling 150 A peak current.

Use Value: R_θJC = 0.26 °C/W enables direct cold-plate mounting, achieving junction temperature <125°C at full load without forced liquid cooling.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	R_DS(on) = 10.5 mΩ, Q_g = 220 nC, TO-247 package (single drain lead)	Lower gate charge reduces driver loss but higher R_DS(on) increases conduction loss at >100 A	Preferred where gate drive power is constrained and peak current <130 A
IXFH180N10P	R_DS(on) = 8.5 mΩ, Q_g = 420 nC, TO-264 package, higher C_iss (8500 pF)	Lower on-resistance improves efficiency but higher Q_g demands stronger gate driver and increases switching loss	Better for low-frequency, high-current applications (>150 A DC) where switching loss is secondary

Compared with STW90NF10 and IXFH180N10P, IRFPS3810 strikes a balance: its 9 mΩ R_DS(on) and 260–390 nC Q_g deliver optimal trade-off between conduction and switching loss across 50–200 kHz industrial power converters, while the dual-drain Super-247™ package ensures superior thermal and EMI performance.

Availability

IRFPS3810 is available at Aetrix Electronics and suitable for industrial motor drives, server power supplies, uninterruptible power systems, and EV onboard charger DC-DC stages requiring stable component supply and long-term production continuity.

Supply support for IRFPS3810 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader headquartered in Munich, Germany, specializing in power management, automotive, and industrial control ICs and discrete devices.

This device belongs to Infineon's legacy HEXFET® Power MOSFET product line, originally developed by International Rectifier and designed for high-efficiency, high-reliability power conversion in industrial, computing, and renewable energy systems.

FAQ

Is IRFPS3810 suitable for synchronous rectification in LLC resonant converters?

Yes. With R_DS(on) = 9 mΩ and body diode t_rr = 220–330 ns, it reduces both conduction and reverse recovery losses in 100–300 kHz LLC secondaries. Its low Q_gd/Q_g ratio also minimizes risk of false turn-on during high dv/dt transitions.

What is the maximum recommended gate resistor for hard-switching at 150 kHz?

For 150 kHz operation with 100 A load, R_G ≤ 1.2 Ω is recommended to maintain t_r/t_f < 200 ns and limit switching loss. At R_G = 1.03 Ω (datasheet test condition), t_r = 270 ns and t_f = 140 ns - acceptable for ≤100 kHz; lower R_G required for higher frequencies.

Does IRFPS3810 require a negative gate turn-off voltage?

No. The device specifies ±30 V gate-to-source voltage rating but is designed for 0 V to +10 V (or +12 V) gate drive. Negative turn-off is not required; however, a small negative bias (−2 V to −5 V) may improve noise immunity in high-dv/dt environments.

Can IRFPS3810 replace IRFP4668 in existing designs?

Yes, with verification. Both are 100 V Super-247™ MOSFETs, but IRFPS3810 has lower R_DS(on) (9 mΩ vs. 11 mΩ) and higher I_D (170 A vs. 150 A). Gate charge is similar (390 nC vs. 370 nC), so driver compatibility is maintained; thermal design must account for higher power density.

IRFPS3810 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-274AA

Packaging:: Bag

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 390 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 580W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS3810 FAQ

1.How can I place an order for IRFPS3810 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS3810 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS3810 reliable?

The price and inventory of IRFPS3810 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS3810 is usually 5 days.

3.What payment methods are accepted for IRFPS3810?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS3810 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS3810?

IRFPS3810 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS3810 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS3810?

For technical support, including IRFPS3810 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS3810 requirements.

6.How does Aetrix verify that IRFPS3810 is sourced from the original manufacturer or authorized distributors?

All IRFPS3810 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS3810 meets industry standards.

7.What is the process for return or replacement of IRFPS3810?

All IRFPS3810 units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS3810, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS3810 part is unused and in its original packaging.

Return procedure for IRFPS3810:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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