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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFPS3810PBF

Name: IRFPS3810PBF
Brand: Infineon Technologies
SKU: IRFPS3810PBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFPS3810PBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-274AA

Datasheet:: IRFPS3810PBF.pdf

Description:: MOSFET N-CH 100V 170A SUPER247

Quantity:: RFQ Add To RFQ list

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Product details

Overview

IRFPS3810PBF from Infineon Technologies (formerly International Rectifier) is a 100 V, 170 A, N-channel enhancement-mode Power MOSFET in Super-247 (TO-274AA) package, featuring R_DS(on) = 9 mΩ at V_GS = 10 V, fully avalanche-rated, and optimized for high-efficiency DC-DC converters and motor drives.

For engineers reviewing the IRFPS3810PBF datasheet, IRFPS3810PBF pinout, IRFPS3810PBF application, or IRFPS3810PBF equivalent, key selection criteria include continuous drain current at elevated case temperature, unclamped inductive switching robustness, gate charge profile for hard-switched topologies, and thermal resistance to heatsink under forced convection.

Technical Context

This device employs advanced HEXFET® silicon processing to achieve ultra-low on-resistance per die area while maintaining rugged unclamped inductive switching capability (E_AS = 1350 mJ). Its dynamic dv/dt rating of 2.3 V/ns supports reliable operation in fast-switching half-bridge configurations.

The MOSFET integrates a low-Q_gd/Q_g ratio (≈61% Miller charge), enabling reduced voltage overshoot during turn-off in high-di/dt applications. Body diode parameters-V_SD = 1.3 V at 100 A, t_rr = 220–330 ns-are specified for synchronous rectification and freewheeling roles in buck and LLC topologies.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	100 V - Maximum blocking voltage before avalanche onset; enables use in 48 V bus systems with 2× safety margin.
R_DS(on)	9 mΩ @ V_GS = 10 V, I_D = 100 A - Directly determines conduction loss in high-current power stages (e.g., 1.53 W loss at 130 A).
I_D (T_C = 25°C)	170 A - Continuous current rating at cold heatsink; limited by package thermal interface, not silicon.
E_AS	1350 mJ - Single-pulse avalanche energy; supports reliable operation during transient overvoltage events without external clamping.
Q_g	260–390 nC - Total gate charge defines driver power requirement and switching speed trade-off in 100–500 kHz converters.
R_θJC	0.26 °C/W - Junction-to-case thermal resistance; enables accurate junction temperature estimation when mounted on a flat, greased heatsink.
t_r/t_f	270 ns / 140 ns - Rise/fall times at V_DD = 50 V, I_D = 100 A, R_G = 1.03 Ω; defines minimum practical dead-time in bridge circuits.

Pinout & Package

IRFPS3810PBF uses the Super-247 (TO-274AA) package: isolated metal tab (drain), 3-pin through-hole outline with 6 mm lead spacing. The drain connects directly to the case for low-inductance thermal and electrical path.

Pin/Terminal	Circuit Role	Design Meaning
Drain (Tab)	Main current return path and thermal interface	Electrically connected to internal die substrate; must be electrically isolated from heatsink unless system design permits common-drain topology.
Source	Reference node for gate drive and current sensing	Low-inductance source bond wires enable accurate shunt-based current monitoring; shared with body diode cathode.
Gate	Control terminal for channel modulation	High-impedance input requiring <100 nA leakage; sensitive to ESD; requires gate resistor to damp ringing in hard-switched layouts.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	9 mΩ enables <2 W conduction loss at 150 A in 48 V battery-fed inverters and server VRMs.
Fully avalanche-rated	1350 mJ single-pulse E_AS eliminates need for external snubbers in UPS and motor control fault conditions.
Dynamic dv/dt immunity	2.3 V/ns rating ensures robustness against parasitic turn-on in high-speed half-bridges with >100 V/ns slew rates.
175°C max junction temperature	Supports operation in sealed industrial enclosures with ambient up to 85°C and 90°C case rise under full load.
Lead-free construction	Complies with RoHS Directive 2011/65/EU; compatible with standard SnAgCu reflow profiles (peak 300°C, 10 s).

Applications

Server Voltage Regulator Module (VRM)

Industrial DC Motor Drive

Use Scenario: High-current, multi-phase buck converter supplying CPU core voltage (0.8–1.2 V) from 12 V input.

IC Role / Device Role / Timing Role: Synchronous high-side switch operating at 300–600 kHz with precise gate timing to minimize shoot-through risk.

Use Value: 9 mΩ R_DS(on) reduces conduction loss by 35% vs. comparable 12 mΩ devices, improving VRM efficiency from 92% to 93.8% at 200 A.

Use Scenario: H-bridge inverter driving 3 kW permanent magnet motor in CNC spindle controller.

IC Role / Device Role / Timing Role: Low-side switching element handling 170 A peak current with fast fall time (140 ns) to limit switching losses during PWM commutation.

Use Value: 1350 mJ E_AS withstands regenerative energy spikes during emergency stop, eliminating need for external avalanche diodes.

Telecom 48 V Intermediate Bus Converter

EV Onboard Charger (OBC) PFC Stage

Use Scenario: Isolated forward or phase-shifted full-bridge primary-side switch converting 48 V to 12 V for base station subsystems.

IC Role / Device Role / Timing Role: Primary-side MOSFET subjected to repetitive 100 V drain stress and 150 A pulsed current at 200 kHz.

Use Value: 0.26 °C/W R_θJC allows direct mounting to aluminum chassis, reducing thermal solution cost by 40% vs. TO-247 alternatives.

Use Scenario: Boost switch in 3.3 kW two-stage OBC PFC front-end operating at 100 kHz with 400 V DC-link.

IC Role / Device Role / Timing Role: Hard-switched boost transistor requiring low Q_gd to suppress voltage oscillation during turn-off.

Use Value: 160–250 nC Q_gd limits Miller-induced voltage spike to <110 V, avoiding secondary breakdown in 650 V-rated systems.

Equivalent & Alternatives

The following parts are listed as comparable options for similar high-current, 100 V power switching applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STW90NF10	R_DS(on) = 10.5 mΩ; lower E_AS (800 mJ); TO-247 package	Limited to lower-energy fault conditions; higher thermal resistance (R_θJC = 0.45 °C/W)	Prefer when cost sensitivity outweighs avalanche robustness and thermal performance.
IXFH180N10P	R_DS(on) = 8.5 mΩ; higher Q_g (420 nC); TO-247 package	Requires stronger gate driver; better conduction but worse switching loss trade-off	Choose when minimizing conduction loss dominates, and gate drive capability supports 420 nC charge.

Compared with STW90NF10 and IXFH180N10P, IRFPS3810PBF delivers superior avalanche ruggedness and lower thermal resistance in the same current class, making it optimal for mission-critical industrial and telecom power where reliability under transient stress is non-negotiable.

Availability

IRFPS3810PBF is available at Aetrix Electronics and suitable for server VRMs, industrial motor drives, telecom intermediate bus converters, and EV onboard charger PFC stages requiring stable component supply across multi-year production cycles.

Supply support for IRFPS3810PBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies AG is a German semiconductor manufacturer specializing in power management, automotive, and industrial control ICs and discrete devices.

The IRFPS3810PBF belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in demanding industrial and infrastructure applications.

FAQ

What is the maximum allowable case temperature for continuous operation?

The datasheet specifies I_D derating begins at T_C = 25°C, with linear reduction to 120 A at T_C = 100°C. Full 170 A rating is only valid at T_C ≤ 25°C. Operation above 100°C case temperature is prohibited due to thermal runaway risk and package mechanical limits.

Is IRFPS3810PBF suitable for synchronous rectification in LLC resonant converters?

Yes - its low R_DS(on) (9 mΩ), fast body diode (t_rr = 220–330 ns), and low Q_rr (1640–2460 nC) make it viable for secondary-side synchronous rectification in 300–500 kHz LLC designs, provided gate drive timing avoids cross-conduction and layout minimizes source inductance.

Does the Super-247 package require special PCB layout considerations?

Yes - the exposed drain tab demands isolation from ground planes via ≥0.5 mm clearance and dielectric coating. Thermal vias under the tab must be filled or capped to prevent solder wicking. Lead spacing (6 mm) mandates wider trace routing than TO-220 or TO-247, affecting high-frequency loop area control.

Can IRFPS3810PBF replace older IRFP4668 in existing designs?

No - although both are 100 V Super-247 MOSFETs, IRFP4668 has R_DS(on) = 7.5 mΩ and higher Q_g (450 nC). Substituting IRFPS3810PBF would increase conduction loss by ~20% and reduce gate drive burden, but may cause instability in gate-drive-limited circuits due to lower capacitance.

IRFPS3810PBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-274AA

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 100 V

Current - Continuous Drain (Id) @ 25°C:: 170A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 9mOhm @ 100A, 10V

Vgs(th) (Max) @ Id:: 5V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 390 nC @ 10 V

Vgs (Max):: ±30V

Input Capacitance (Ciss) (Max) @ Vds:: 6790 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 580W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Through Hole

Supplier Device Package:: SUPER-247™ (TO-274AA)

IRFPS3810PBF FAQ

1.How can I place an order for IRFPS3810PBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFPS3810PBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFPS3810PBF reliable?

The price and inventory of IRFPS3810PBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFPS3810PBF is usually 5 days.

3.What payment methods are accepted for IRFPS3810PBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFPS3810PBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFPS3810PBF?

IRFPS3810PBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFPS3810PBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFPS3810PBF?

For technical support, including IRFPS3810PBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFPS3810PBF requirements.

6.How does Aetrix verify that IRFPS3810PBF is sourced from the original manufacturer or authorized distributors?

All IRFPS3810PBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFPS3810PBF meets industry standards.

7.What is the process for return or replacement of IRFPS3810PBF?

All IRFPS3810PBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFPS3810PBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFPS3810PBF part is unused and in its original packaging.

Return procedure for IRFPS3810PBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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