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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1010ZPBF

Name: IRFR1010ZPBF
Brand: Infineon Technologies
SKU: IRFR1010ZPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1010ZPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1010ZPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRFR1010ZPBF from Infineon Technologies is a 55V, 42A N-channel D-Pak power MOSFET with 7.5mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 91mJ - designed for high-efficiency DC-DC converters and motor drive half-bridges.

For engineers reviewing the IRFR1010ZPBF datasheet, IRFR1010ZPBF pinout, IRFR1010ZPBF application, or IRFR1010ZPBF equivalent, key selection criteria include its low conduction loss (5.8mΩ typical), fast switching (t_r = 76ns, t_f = 48ns), body diode recovery performance (t_rr = 24–36ns), and thermal robustness in surface-mount power stages.

Technical Context

This HEXFET® device uses advanced silicon processing to minimize on-resistance per die area while maintaining rugged unclamped inductive switching capability. Its gate charge profile (Q_g = 63–95nC, Q_gd = 23nC) supports efficient PWM control in synchronous buck topologies operating up to 500kHz.

The integrated body diode exhibits V_SD = 1.3V at 42A and Q_rr = 20–30nC, enabling reliable freewheeling in brushed DC motor drives and OR-ing circuits without external Schottky supplementation.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - supports 48V nominal bus systems with 15% overvoltage margin
R_DS(on) max	7.5mΩ at V_GS = 10V, T_J = 175°C - ensures <1.3W conduction loss at 42A
I_D continuous	42A at T_C = 25°C - enables high-current single-device solutions in compact layouts
E_AS tested	91mJ - allows safe operation under unclamped inductive switching at full rated current
Q_g	63–95nC - determines gate driver power requirement and switching loss trade-off
t_r/t_f	76ns/48ns - supports high-frequency switching with minimal overlap loss
T_J max	175°C - permits sustained operation in thermally constrained industrial enclosures

Pinout & Package

IRFR1010ZPBF is housed in a surface-mount D-Pak (TO-252AA) package with exposed drain pad for enhanced thermal dissipation. The three-terminal configuration supports standard PCB layout practices for high-current power switches.

Pin/Terminal	Circuit Role	Design Meaning
Drain (D)	Main current path output	Connected to exposed copper pad - must be soldered to large thermal plane for R_θJC = 1.11°C/W performance
Source (S)	Reference node for gate drive and current sensing	Low-inductance connection critical for stable switching; internal source inductance L_S = 7.5nH
Gate (G)	Control input for channel modulation	High-impedance terminal requiring <95nC charge; Miller charge Q_gd = 23nC dominates turn-off timing

Key Features

Feature	Design Value
Ultra-low R_DS(on)	5.8mΩ typical at 10V gate drive - reduces I²R losses by >30% vs. legacy 55V MOSFETs
Repetitive avalanche rating	Rated for repeated unclamped inductive switching up to T_Jmax - eliminates need for external snubbers in relay drivers
Fast body diode	t_rr = 24–36ns, Q_rr = 20–30nC - minimizes reverse recovery loss in synchronous rectification
High-temperature operation	175°C junction rating - enables derating-free design in sealed industrial motor controllers
Lead-free construction	RoHS-compliant D-Pak package - meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1)

Applications

Brushed DC Motor Drive

48V DC-DC Buck Converter

Use Scenario: H-bridge control of 24–48V permanent magnet motors in warehouse automation conveyors.

IC Role / Device Role / Timing Role: Low-side switch handling 42A peak current during acceleration; body diode provides freewheeling path.

Use Value: 7.5mΩ R_DS(on) limits conduction loss to ≤1.3W at full load, reducing heatsink volume by 40% versus 12mΩ alternatives.

Use Scenario: Primary switch in 48V-to-12V isolated buck converter powering vehicle infotainment systems.

IC Role / Device Role / Timing Role: High-frequency (300kHz) synchronous rectifier with fast t_r/t_f minimizing dead-time losses.

Use Value: Q_gd/Q_g ratio of 0.24 enables clean zero-voltage switching transition, cutting switching loss by 22% vs. comparable devices.

Industrial Power OR-ing

UPS Inverter Stage

Use Scenario: Redundant 48V power supply combining using ideal diode architecture in telecom rectifier shelves.

IC Role / Device Role / Timing Role: Forward conduction path with V_SD = 1.3V at 42A; gate driven to emulate low-loss diode behavior.

Use Value: 175°C rating allows continuous operation at 85°C ambient without derating, improving system uptime in enclosed cabinets.

Use Scenario: Half-bridge leg in 1kVA online UPS inverter delivering pure sine wave output.

IC Role / Device Role / Timing Role: Hard-switched power switch subjected to repetitive avalanche during short-circuit fault clearing.

Use Value: 91mJ E_AS tested rating ensures survival of ≥5000 fault cycles at 42A, meeting UL 1741 fault tolerance requirements.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	55V, 110A, R_DS(on) = 5.2mΩ, TO-220 package	Higher current rating but through-hole mounting; lacks D-Pak thermal interface	Prefer when board space allows through-hole and higher peak current is required
IXTP110N10T	100V, 110A, R_DS(on) = 7.2mΩ, TO-220 package	Higher voltage rating sacrifices conduction efficiency at 48V; not drop-in compatible	Select only if system requires 100V breakdown margin and thermal design accommodates TO-220

Compared with STP110N55F7 and IXTP110N10T, IRFR1010ZPBF offers superior thermal resistance (R_θJC = 1.11°C/W) and surface-mount compatibility for automated assembly, making it optimal for space-constrained 48V power stages where 55V rating is sufficient.

Availability

IRFR1010ZPBF is available at Aetrix Electronics and suitable for brushed DC motor drives, 48V DC-DC buck converters, and industrial power OR-ing applications requiring stable component supply across multi-year production cycles.

Supply support for IRFR1010ZPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.

This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial motor control, renewable energy inverters, and server power supplies.

FAQ

What is the maximum allowable gate-source voltage for IRFR1010ZPBF?

The absolute maximum V_GS rating is ±20V. Operation beyond ±15V risks irreversible gate oxide damage. Recommended gate drive is +10V to ensure full enhancement while maintaining margin against transients. Gate threshold voltage ranges from 2.0V to 4.0V at 25°C, with negative temperature coefficient confirmed down to −55°C.

Does IRFR1010ZPBF require a gate resistor for stability?

Yes - a series gate resistor (typically 5–15Ω) is required to dampen ringing caused by gate-drain capacitance (C_rss = 250pF) interacting with PCB trace inductance. Without it, overshoot exceeding ±20V can occur during fast switching, risking gate failure. Layout best practice mandates shortest possible gate loop and local 100nF decoupling at the source pad.

Can IRFR1010ZPBF be used in parallel configurations?

Yes - its positive temperature coefficient of R_DS(on) (normalized to 2.5× at 175°C) enables inherent current sharing. Parallel operation requires matched gate drive impedance, symmetrical PCB layout, and thermal coupling via shared copper pour. Derating to 80% of total rated current per device is recommended for reliability.

Is the body diode suitable for continuous conduction mode (CCM) in synchronous rectification?

Yes - the body diode is rated for continuous source current of 42A and pulsed current up to 360A. Its 1.3V forward drop and 24–36ns reverse recovery time make it viable for CCM in 100–500kHz buck converters, though external Schottky may still be preferred for <100ns t_r targets.

IRFR1010ZPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Discontinued at Digi-Key

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1010ZPBF FAQ

1.How can I place an order for IRFR1010ZPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1010ZPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1010ZPBF reliable?

The price and inventory of IRFR1010ZPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1010ZPBF is usually 5 days.

3.What payment methods are accepted for IRFR1010ZPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1010ZPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1010ZPBF?

IRFR1010ZPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1010ZPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1010ZPBF?

For technical support, including IRFR1010ZPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1010ZPBF requirements.

6.How does Aetrix verify that IRFR1010ZPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1010ZPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1010ZPBF meets industry standards.

7.What is the process for return or replacement of IRFR1010ZPBF?

All IRFR1010ZPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1010ZPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1010ZPBF part is unused and in its original packaging.

Return procedure for IRFR1010ZPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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