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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1010ZTRLPBF

Name: IRFR1010ZTRLPBF
Brand: Infineon Technologies
SKU: IRFR1010ZTRLPBF
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1010ZTRLPBF

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1010ZTRLPBF.pdf

Description:: MOSFET N-CH 55V 42A DPAK

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Product details

Overview

IRFR1010ZTRLPBF from Infineon Technologies is a 55V, 42A N-channel DPAK-packaged Power MOSFET with 7.5mΩ R_DS(on) at V_GS = 10V, 175°C maximum junction temperature, and rated for repetitive avalanche operation up to T_jmax. It delivers ultra-low conduction loss and fast switching (t_r = 76ns, t_f = 48ns) in DC-DC converters, motor drives, and power supply synchronous rectification.

For engineers reviewing the IRFR1010ZTRLPBF datasheet, IRFR1010ZTRLPBF pinout, IRFR1010ZTRLPBF application, or IRFR1010ZTRLPBF equivalent, key selection criteria include its 7.5mΩ on-resistance at 10V gate drive, 95nC total gate charge, 1.3V body diode forward voltage, 24–36ns reverse recovery time, and DPAK thermal resistance of 1.11°C/W junction-to-case.

Technical Context

This HEXFET® Power MOSFET employs advanced silicon processing to minimize R_DS(on) per die area while maintaining robust safe operating area (SOA) and unclamped inductive switching capability. Its design integrates a low-inductance source-drain path (L_S = 7.5nH, L_D = 4.5nH) and optimized gate charge profile (Q_gd/Q_gs = 23/17 nC) for high-efficiency hard-switching topologies.

The device features a thermally robust construction enabling continuous operation at 175°C junction temperature, with validated repetitive avalanche energy (E_AR) up to 120mJ at T_j = 25°C and linear derating to zero at 175°C. Its body diode exhibits controlled reverse recovery (Q_rr = 20–30nC, t_rr = 24–36ns), supporting synchronous rectifier use without external Schottky supplementation in medium-frequency designs.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55V - Maximum drain-source blocking voltage; defines upper limit for bus voltage in buck, half-bridge, or flyback primary-side switches.
R_DS(on)	7.5mΩ @ V_GS = 10V - Conduction loss of 13.2W at 42A; enables high-current, low-drop applications like 12V input motor drivers.
I_D	42A @ T_C = 25°C - Continuous current rating under ideal heatsinking; derates to ~25A at T_C = 100°C per Fig.9.
Q_g	95nC - Total gate charge determines driver strength requirement; 7.6Ω gate resistor yields ~17ns turn-on delay in typical test setup.
t_r/t_f	76ns / 48ns - Fast edge rates support >200kHz switching in SMPS; limited by Q_gd = 23nC and C_iss = 2840pF.
T_jmax	175°C - Enables operation in sealed enclosures or high-ambient industrial environments without forced cooling.
E_AS	360mJ - Single-pulse avalanche energy at T_j = 25°C; supports robustness against inductive load transients in relay/motor control.

Pinout & Package

IRFR1010ZTRLPBF is housed in a surface-mount DPAK (TO-252AA) package with exposed drain pad for thermal enhancement. The package measures 6.73 × 6.22 × 2.39 mm and features gull-wing leads compatible with standard reflow profiles.

Pin/Terminal	Circuit Role	Design Meaning
Pin 1 (Source)	Source terminal (S)	Low-side reference node; connects to ground or low-side switch node; carries full load current and body diode return path.
Pin 2 (Gate)	Control input (G)	High-impedance MOS gate; requires 2.0–4.0V threshold and 10V nominal drive for full enhancement; sensitive to ESD.
Pin 3 (Drain)	Power output (D)	High-side power node; electrically connected to exposed copper pad on bottom; must be thermally coupled to PCB copper pour.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	7.5mΩ at 10V gate drive reduces I²R losses by >30% vs. legacy 55V MOSFETs in 42A applications.
Repetitive avalanche rating	Validated for repeated unclamped inductive switching up to T_jmax, eliminating need for external snubbers in solenoid/motor gate drivers.
175°C junction rating	Enables operation in automotive under-hood or industrial control cabinets without derating or active cooling.
Fast body diode	24–36ns t_rr and 20–30nC Q_rr allow reliable synchronous rectification in 100–300kHz DC-DC converters.

Applications

Motor Drive Half-Bridge

DC-DC Synchronous Rectifier

Use Scenario: High-current 24V brushed DC motor control in industrial actuators with PWM frequencies up to 20kHz.

IC Role / Device Role / Timing Role: Low-side switch in half-bridge topology; handles bidirectional current during braking via body diode conduction.

Use Value: 7.5mΩ R_DS(on) limits conduction loss to <1.5W at 20A, while 175°C rating ensures reliability in enclosed motor housings.

Use Scenario: Secondary-side synchronous rectification in isolated 48V→12V telecom DC-DC converters operating at 250kHz.

IC Role / Device Role / Timing Role: Active rectifier replacing Schottky diode; driven complementary to primary-side switch with dead-time control.

Use Value: 1.3V V_SD and 24ns t_rr reduce forward loss and switching loss vs. 40V Schottky, improving efficiency by 1.2% at full load.

Automotive Load Switch

UPS Inverter Output Stage

Use Scenario: 12V battery-powered electronic throttle or HVAC blower control with overcurrent and thermal protection.

IC Role / Device Role / Timing Role: High-side load switch with integrated current sensing via R_DS(on) monitoring; operates in linear region during soft-start.

Use Value: Repetitive avalanche capability absorbs inductive kickback from motor windings during sudden shutdown, preventing system latch-up.

Use Scenario: 230VAC output in-line UPS inverters using H-bridge topology with 55V rail clamping.

IC Role / Device Role / Timing Role: Low-voltage side switch in full-bridge output stage; commutates 50Hz/60Hz sine-wave synthesized via PWM.

Use Value: 360mJ E_AS withstands line surges and neutral-ground faults without failure, extending field lifetime beyond 10 years.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP110N55F7	55V, 110A, R_DS(on) = 5.5mΩ, TO-220 package, higher capacitance (C_iss = 4200pF)	Requires larger heatsink and slower switching due to higher Q_g (135nC); unsuitable for compact DPAK layouts	Select when higher current headroom and through-hole assembly are prioritized over board space and switching speed.
IXTP110N10T	100V, 110A, R_DS(on) = 7.2mΩ, TO-220, higher V_DSS margin but 2× Q_g (180nC)	Over-specified voltage rating increases cost and gate drive burden; not optimal for 55V systems	Choose only if system-level transient protection requires >60V blocking capability or legacy TO-220 footprint reuse is mandatory.

Compared with STP110N55F7 and IXTP110N10T, IRFR1010ZTRLPBF offers the optimal balance of DPAK footprint, 7.5mΩ conduction loss, and 95nC gate charge for space-constrained 42A switching applications-delivering 18% lower driver power and 32% smaller PCB area than TO-220 alternatives.

Availability

IRFR1010ZTRLPBF is available at Aetrix Electronics and suitable for motor drives, DC-DC synchronous rectifiers, and automotive load switches requiring stable component supply and long-term industrial lifecycle support.

Supply support for IRFR1010ZTRLPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.

This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency power conversion in automotive, industrial, and computing applications where low R_DS(on), avalanche ruggedness, and thermal reliability are critical.

FAQ

What is the maximum continuous drain current at 100°C case temperature?

The IRFR1010ZTRLPBF supports 65A continuous drain current at T_C = 25°C but is limited to 42A at T_C = 25°C by package thermal constraints. At T_C = 100°C, the datasheet specifies 25A (Fig.9), confirmed by linear derating from 42A at 25°C using the 1.11°C/W R_θJC value and 175°C T_jmax.

Does this MOSFET require a gate resistor for stability?

Yes-a gate resistor (typically 5–15Ω) is required to dampen ringing caused by interaction between gate drive impedance and Q_gd (23nC) and C_iss (2840pF). Without it, overshoot exceeding ±20V V_GS can occur, risking gate oxide damage; layout parasitics further necessitate series resistance near the gate pin.

Can the body diode be used for continuous freewheeling in a buck converter?

Yes-the integrated body diode is rated for continuous source current of 42A (I_S) and pulsed current of 360A (I_SM). With V_SD = 1.3V and t_rr = 24–36ns, it supports freewheeling up to ~150kHz before reverse recovery losses dominate; however, synchronous rectification is preferred above 50kHz for efficiency.

Is IRFR1010ZTRLPBF RoHS-compliant and lead-free?

Yes-the "PbF" suffix confirms compliance with RoHS Directive 2011/65/EU and JEDEC J-STD-609A Class 2a marking. The device uses matte tin plating on leads and lead-free solder-compatible terminations, with no exemption claims for lead content; full material declarations are available in Infineon's PPAP documentation.

IRFR1010ZTRLPBF Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tape & Reel (TR)

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 42A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 7.5mOhm @ 42A, 10V

Vgs(th) (Max) @ Id:: 4V @ 100µA

Gate Charge (Qg) (Max) @ Vgs:: 95 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 2840 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 140W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1010ZTRLPBF FAQ

1.How can I place an order for IRFR1010ZTRLPBF through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1010ZTRLPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1010ZTRLPBF reliable?

The price and inventory of IRFR1010ZTRLPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1010ZTRLPBF is usually 5 days.

3.What payment methods are accepted for IRFR1010ZTRLPBF?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1010ZTRLPBF transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1010ZTRLPBF?

IRFR1010ZTRLPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1010ZTRLPBF order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1010ZTRLPBF?

For technical support, including IRFR1010ZTRLPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1010ZTRLPBF requirements.

6.How does Aetrix verify that IRFR1010ZTRLPBF is sourced from the original manufacturer or authorized distributors?

All IRFR1010ZTRLPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1010ZTRLPBF meets industry standards.

7.What is the process for return or replacement of IRFR1010ZTRLPBF?

All IRFR1010ZTRLPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1010ZTRLPBF, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1010ZTRLPBF part is unused and in its original packaging.

Return procedure for IRFR1010ZTRLPBF:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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