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Infineon Technologies IRFR1010ZTRRPBF
- Part No.:
- IRFR1010ZTRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1010ZTRRPBF.pdf
- Description:
- MOSFET N-CH 55V 42A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,053
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Product details
Overview
IRFR1010ZTRRPBF from Infineon Technologies is a 55V, 42A N-channel D-Pak power MOSFET with 7.5mΩ RDS(on) at VGS = 10V, 175°C maximum junction temperature, and rated repetitive avalanche energy up to 91mJ - designed for high-efficiency DC-DC converters, motor drives, and industrial power switching.
For engineers reviewing the IRFR1010ZTRRPBF datasheet, IRFR1010ZTRRPBF pinout, IRFR1010ZTRRPBF application, or IRFR1010ZTRRPBF equivalent, key selection factors include its low conduction loss (5.8–7.5mΩ), fast switching (td(on) = 17ns, tf = 48ns), body diode recovery (trr = 24–36ns), and D-Pak thermal performance (RθJC = 1.11°C/W).
Technical Context
This HEXFET® device uses advanced silicon processing to minimize on-resistance per unit area while maintaining robust unclamped inductive switching capability. Its gate charge profile (Qg = 63–95nC, Qgd = 23nC) supports high-frequency PWM operation with controlled dv/dt and reduced Miller-induced shoot-through risk.
The integrated body diode exhibits low forward voltage (VSD ≤ 1.3V at 42A) and fast reverse recovery (Qrr = 20–30nC), enabling reliable synchronous rectification and freewheeling in hard-switched topologies. Thermal design is enabled by validated transient impedance curves and 175°C continuous operation.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 55V - Maximum blocking voltage before avalanche onset; sets upper limit for bus voltage in buck, half-bridge, and motor phase designs. |
| RDS(on) | 5.8–7.5mΩ @ VGS = 10V - Directly determines I²R conduction loss; enables <1.3W dissipation at 42A DC in optimized PCB layout. |
| ID (TC = 25°C) | 42A - Continuous drain current rating under ideal heatsinking; defines safe operating area (SOA) boundary at low VDS. |
| EAS | 91mJ - Single-pulse avalanche energy rating; allows safe operation during inductive turn-off transients without external snubbers. |
| tr/tf | 76ns/48ns - Rise/fall times at VDD = 28V, ID = 42A, RG = 7.6Ω; constrains minimum practical switching period to ~500ns. |
| Qg | 63–95nC - Total gate charge required for full enhancement; determines driver current demand (e.g., 1A peak for 100ns turn-on). |
| RθJC | 1.11°C/W - Junction-to-case thermal resistance; enables direct mounting to heatsink with predictable ΔTJC under steady-state load. |
Pinout & Package
IRFR1010ZTRRPBF is housed in a surface-mount D-Pak (TO-252AA) package with three terminals: Drain (tab), Source (pin 1), and Gate (pin 2). The exposed drain pad provides low-inductance, high-current path and primary thermal conduction path to PCB copper or heatsink.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| Drain (Tab) | Main current-carrying terminal, electrically connected to package backside metal | Serves as primary thermal interface and high-current return path; requires solder mask-defined thermal pad and ≥2oz copper for RθJA ≤ 40°C/W. |
| Source (Pin 1) | Reference node for gate drive and current sensing | Low-inductance connection critical for stable gate control; internal source inductance (LS = 7.5nH) affects di/dt-induced VGS ringing. |
| Gate (Pin 2) | Control electrode for channel modulation | High-impedance input requiring clean, low-impedance drive; Miller charge (Qgd = 23nC) dominates switching transition timing. |
Key Features
| Feature | Design Value |
|---|---|
| Ultra-low RDS(on) | 5.8–7.5mΩ enables >96% efficiency in 12V–48V input DC-DC stages at 30–40A output. |
| 175°C maximum junction temperature | Supports operation in sealed enclosures or high-ambient environments without derating below full current rating. |
| Repetitive avalanche rated | Validated for repeated unclamped inductive switching up to Tjmax, eliminating need for external clamping in relay/motor drive snubberless designs. |
| Fast body diode recovery | trr = 24–36ns and Qrr = 20–30nC reduce switching loss and EMI in synchronous rectifier and bidirectional converter applications. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL1); compatible with standard Pb-free reflow profiles up to 260°C peak. |
Applications
| DC-DC Converter Primary Switch | Brushed DC Motor High-Side Driver |
|---|---|
Use Scenario: 48V-to-12V synchronous buck converter delivering 35A continuous output in telecom power shelf. IC Role / Device Role / Timing Role: Main high-side switching element operating at 250kHz with 10V gate drive; handles full load current during on-time. Use Value: Low RDS(on) reduces conduction loss to <1.1W; fast switching minimizes dead-time losses and improves light-load efficiency. |
Use Scenario: H-bridge driver for 24V, 30A brushed DC motor in automated gate actuator with regenerative braking. IC Role / Device Role / Timing Role: High-side switch controlling motor voltage polarity; conducts full motor current during active drive and freewheels via body diode during decay. Use Value: Rated repetitive avalanche withstands inductive kickback during rapid direction reversal; low VSD limits freewheeling loss during regeneration. |
| Industrial PLC Output Module | LED Constant-Current Driver Switch |
Use Scenario: 24V digital output stage driving solenoid loads (≤2A) with short-circuit protection and hot-swap capability. IC Role / Device Role / Timing Role: Load switch with integrated current limiting and thermal shutdown; operates in linear mode during fault conditions. Use Value: 175°C Tjmax ensures survival during sustained overcurrent events; low RDS(on) minimizes self-heating during normal operation. |
Use Scenario: Buck-based constant-current LED driver for high-bay lighting (48V bus, 1.5A LED string). IC Role / Device Role / Timing Role: PWM-controlled current regulator switch operating at 100kHz; modulates average LED current via duty cycle. Use Value: Fast tf (48ns) and low Qgd enable precise current regulation with minimal overshoot; low Coss (470pF) reduces switching loss at high frequency. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| STP110N55F7 | 55V, 110A, RDS(on) = 5.5mΩ, TO-220 package, RθJC = 0.75°C/W | Higher current rating but larger footprint and higher gate charge (Qg = 120nC); requires mechanical mounting and heatsink. | Preferred where board space permits and higher peak current (>60A) is needed; not drop-in due to package and pinout mismatch. |
| IXTP110N055T | 55V, 110A, RDS(on) = 5.5mΩ, TO-220AB package, 175°C rating, Qg = 105nC | Same voltage/current class but higher gate drive demand and slower switching (tf = 75ns); no avalanche rating published. | Use when thermal margin is critical and avalanche robustness is not required; unsuitable for unclamped inductive switching. |
Compared with STP110N55F7 and IXTP110N055T, IRFR1010ZTRRPBF offers superior board-level thermal integration via D-Pak, lower gate drive burden (Qg ≤ 95nC), and guaranteed repetitive avalanche capability - making it optimal for compact, high-reliability industrial switching where space and transient robustness are constrained.
Availability
IRFR1010ZTRRPBF is available at Aetrix Electronics and suitable for industrial motor drives, telecom DC-DC converters, and programmable logic controller (PLC) output modules requiring stable component supply and long-term manufacturing continuity.
Supply support for IRFR1010ZTRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor manufacturer specializing in power management, automotive electronics, and industrial control ICs and discrete devices.
This part belongs to Infineon's HEXFET® Power MOSFET product line, engineered for high-efficiency, high-reliability power conversion in industrial, automotive, and renewable energy systems where low conduction loss, fast switching, and ruggedness are essential.
FAQ
What is the maximum continuous drain current at 100°C case temperature?
The IRFR1010ZTRRPBF supports 42A continuous drain current at TC = 25°C, derating linearly to approximately 28A at TC = 100°C based on the 1.11°C/W RθJC and 175°C Tjmax. This value is confirmed in the Absolute Maximum Ratings table under "ID @ TC = 100°C".
Does this MOSFET require a gate resistor for stability?
Yes - a gate resistor (typically 5–15Ω) is recommended to dampen ringing caused by interaction between gate drive impedance and the device's Qgd/Ciss ratio. The datasheet specifies switching test conditions using RG = 7.6Ω, and layout parasitics (especially LS = 7.5nH) make external gate resistance essential for reliable high-speed operation.
Can IRFR1010ZTRRPBF be used in parallel configurations?
Yes - its positive RDS(on) temperature coefficient (confirmed in Fig.10) ensures inherent current sharing when paralleled. However, matched gate drive routing, symmetrical PCB layout, and individual gate resistors are required to avoid dynamic imbalance; the device's low Qgd (23nC) helps minimize skew during turn-on.
Is the body diode suitable for synchronous rectification?
The body diode has trr = 24–36ns and Qrr = 20–30nC, making it usable in low-frequency (<100kHz) synchronous rectification, but not optimal for high-frequency (>300kHz) applications where dedicated Schottky or GaN-based solutions offer lower loss. Its VSD ≤ 1.3V at 42A supports moderate-efficiency freewheeling in motor and converter topologies.
IRFR1010ZTRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 55 V
- Current - Continuous Drain (Id) @ 25°C:
- 42A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 7.5mOhm @ 42A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 95 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2840 pF @ 25 V
- FET Feature:
- -
- Power Dissipation (Max):
- 140W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR1010ZTRRPBF FAQ
1.How can I place an order for IRFR1010ZTRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1010ZTRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1010ZTRRPBF reliable?
The price and inventory of IRFR1010ZTRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1010ZTRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR1010ZTRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1010ZTRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1010ZTRRPBF?
IRFR1010ZTRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1010ZTRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1010ZTRRPBF?
For technical support, including IRFR1010ZTRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1010ZTRRPBF requirements.
6.How does Aetrix verify that IRFR1010ZTRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR1010ZTRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1010ZTRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR1010ZTRRPBF?
All IRFR1010ZTRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1010ZTRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1010ZTRRPBF part is unused and in its original packaging.
Return procedure for IRFR1010ZTRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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