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Infineon Technologies IRFR1018ETRRPBF
- Part No.:
- IRFR1018ETRRPBF
- Manufacturer:
- Infineon Technologies
- Category:
- FETs, MOSFETs
- Package:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Datasheet:
-
IRFR1018ETRRPBF.pdf
- Description:
- MOSFET N-CH 60V 56A DPAK
- Quantity:
- Payment:
- Shipping:
Inventory:4,705
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Product details
Overview
IRFR1018ETRRPBF from Infineon Technologies is a 60 V, 7.1 mΩ (typ), 56 A (package-limited) N-channel DPAK-3 (D-Pak) HEXFET® Power MOSFET optimized for high-frequency hard-switched and synchronous rectification applications in SMPS and UPS systems. It features enhanced body diode dV/dt and dI/dt capability, 46 nC total gate charge, and 270 pF output capacitance.
For engineers reviewing the IRFR1018ETRRPBF datasheet, IRFR1018ETRRPBF pinout, IRFR1018ETRRPBF application, or IRFR1018ETRRPBF equivalent, key selection criteria include its 1.32 °C/W junction-to-case thermal resistance, 315 A pulsed source current rating, 26 ns reverse recovery time, avalanche ruggedness up to 300 mJ, and suitability for high-efficiency secondary-side switching where low RDS(on) and fast diode recovery are critical.
Technical Context
This MOSFET employs a planar silicon process with optimized cell layout to deliver improved dynamic dv/dt ruggedness and fully characterized avalanche SOA. Its gate structure supports stable operation under high di/dt transients (up to 1668 A/μs) and ensures robust unclamped inductive switching performance.
The integrated body diode exhibits low VSD (1.3 V max), tight trr distribution (26–39 ns), and high IAR (47 A), enabling reliable synchronous rectification without external Schottky supplementation in 100–500 kHz topologies.
Key Specifications
| Parameter | Value and Actual Design Meaning |
|---|---|
| VDSS | 60 V - Maximum blocking voltage before avalanche onset; defines safe operating range in 48 V bus and PoE+ designs. |
| RDS(on) (typ) | 7.1 mΩ at VGS = 10 V, TJ = 25°C - Enables <1.8 W conduction loss at 56 A DC, critical for thermal management in compact SMPS. |
| Qg | 46 nC (max 69 nC) - Determines gate drive power and switching speed; supports <55 ns turn-off delay with 10 Ω driver. |
| trr | 26 ns (typ, TJ = 25°C) - Minimizes dead-time losses and EMI in synchronous buck converters operating above 200 kHz. |
| EAS | 300 mJ (single-pulse, thermally limited) - Allows safe energy absorption during transient overloads without junction failure. |
| RθJC | 1.32 °C/W - Enables direct heatsinking to PCB copper or external metal; supports >40 W continuous dissipation with modest thermal interface. |
| ISD (pulsed) | 315 A - Supports high peak currents during short-circuit events or inrush, preserving system reliability without crowbar protection. |
Pinout & Package
D-Pak (TO-252AA) package: surface-mount, single-die, 3-terminal configuration with exposed drain pad for thermal and electrical connection.
| Pin/Terminal | Circuit Role | Design Meaning |
|---|---|---|
| G (Gate) | Control electrode | Receives 10 V logic-level drive; 0.73 Ω internal gate resistance limits ringing and simplifies snubber design. |
| D (Drain) | High-side power terminal | Connected to exposed copper pad; carries full load current and serves as primary thermal path to PCB heatsink. |
| S (Source) | Reference and return node | Common return for gate drive and load current; low-inductance layout essential to maintain dV/dt immunity. |
Key Features
| Feature | Design Value |
|---|---|
| Enhanced body diode dV/dt capability | Rated for hard commutation up to 1668 A/μs without parasitic turn-on - eliminates need for external diode clamping in LLC resonant converters. |
| Fully characterized avalanche SOA | Guaranteed 300 mJ single-pulse energy handling with validated thermal failure model - enables robust overvoltage protection in offline PSUs. |
| Low Coss eff. (TR) | 630 pF - reduces switching loss during zero-voltage transition and improves light-load efficiency in adaptive frequency controllers. |
| Lead-free and RoHS-compliant | Meets IPC-J-STD-020 moisture sensitivity level 1 (MSL-1); qualified per consumer-level lead-free standards without derating. |
| Optimized for synchronous rectification | 1.3 V VSD and 24 nC Qrr minimize conduction + recovery loss - delivers >0.5% efficiency gain vs. standard MOSFETs in 12 V output rails. |
Applications
| Server VRM Output Stage | Industrial UPS Inverter |
|---|---|
Use Scenario: High-current, high-frequency synchronous rectification in multiphase 12 V VRMs powering modern CPUs/GPUs. IC Role / Device Role / Timing Role: Low-side switch in synchronous buck converter; operates at 300–600 kHz with precise dead-time control. Use Value: 7.1 mΩ RDS(on) and 26 ns trr reduce combined conduction/recovery loss by ~1.2 W per phase versus legacy 10 mΩ devices. |
Use Scenario: Bidirectional DC link switching in double-conversion UPS inverters requiring high avalanche tolerance. IC Role / Device Role / Timing Role: Half-bridge leg switch handling 48 V DC input and 230 V AC output via H-bridge modulation. Use Value: 300 mJ EAS and 47 A IAR enable safe operation during grid fault transients without external snubbers. |
| Telecom Rectifier Module | EV Onboard Charger Auxiliary Supply |
Use Scenario: Secondary-side synchronous rectification in isolated 48 V telecom rectifiers targeting >96% efficiency at full load. IC Role / Device Role / Timing Role: Synchronous rectifier in forward or active-clamp forward topology; driven by transformer-coupled gate signal. Use Value: 1.3 V VSD and 315 A ISM sustain 50 A continuous output while limiting forward drop loss to <65 mW per device. |
Use Scenario: High-reliability auxiliary DC-DC supply (12 V/3 A) inside EV OBC modules exposed to automotive temperature cycling. IC Role / Device Role / Timing Role: Primary-side switch in flyback converter; must survive -40°C to +150°C ambient with no derating. Use Value: -55°C to +175°C TSTG/TJ rating and 1.32 °C/W RθJC ensure stable operation across full automotive thermal envelope. |
Equivalent & Alternatives
The following parts are listed as comparable options for similar N-channel power MOSFET applications.
| Alternative Part | Technical Difference | Application Difference | Selection Advice |
|---|---|---|---|
| IRFR1010TRPBF | Higher RDS(on) (10.5 mΩ typ), lower Qg (32 nC), same 60 V rating and D-Pak package. | Better suited for lower-current, higher-switching-frequency apps where gate drive loss dominates. | Select when optimizing for <20 A loads and fSW > 1 MHz; avoid for >40 A synchronous rectification due to higher conduction loss. |
| STP60NF06 | Same VDSS and package, but higher RDS(on) (10 mΩ), larger Qg (72 nC), and no published avalanche energy spec. | Lacks documented avalanche ruggedness and body diode dI/dt rating - unsuitable for unclamped inductive switching. | Acceptable only in non-avalanche, low-di/dt linear or soft-switched applications; not recommended for SMPS secondary-side use. |
Compared with IRFR1018ETRRPBF, IRFR1010TRPBF trades conduction loss for reduced gate drive burden, while STP60NF06 lacks verified avalanche and diode recovery specs - making IRFR1018ETRRPBF the sole choice for high-reliability synchronous rectification in hard-switched topologies.
Availability
IRFR1018ETRRPBF is available at Aetrix Electronics and suitable for server VRM output stages, industrial UPS inverters, and telecom rectifier modules requiring stable component supply, long-term lifecycle support, and traceable lead-free sourcing.
Supply support for IRFR1018ETRRPBF includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.
Manufacturer
Infineon Technologies is a German semiconductor leader specializing in power management, automotive MCUs, and industrial control ICs, with global manufacturing and quality certification to ISO/TS 16949 and IECQ QC 080000.
This device belongs to Infineon's HEXFET® Power MOSFET product line, engineered specifically for high-efficiency, high-reliability power conversion in switched-mode power supplies, UPS systems, and motor drives.
FAQ
What is the maximum continuous drain current for IRFR1018ETRRPBF at 100°C case temperature?
The maximum continuous drain current at TC = 100°C is 56 A, limited by wire bond capacity-not silicon. This rating assumes proper PCB copper area (1"² FR-4) and junction temperature maintained ≤175°C. Derating begins at 1.32 °C/W above 25°C case temperature.
Does IRFR1018ETRRPBF have a specified avalanche current rating?
Yes: IAR = 47 A (repetitive avalanche current) is specified under conditions of L = 0.08 mH, RG = 25 Ω, VGS = 10 V, and starting TJ = 25°C. The device supports single-pulse EAS up to 300 mJ, validated per JEDEC JESD24-11 test methodology.
Can IRFR1018ETRRPBF be used as a direct replacement for IRFR1018EPbF?
Yes - IRFR1018ETRRPBF is the tape-and-reel, lead-free, RoHS-compliant version of IRFR1018EPbF, sharing identical electrical specifications, thermal performance, pinout, and D-Pak package dimensions. The "T" suffix denotes tape-and-reel packaging; "RPBF" confirms lead-free finish.
What is the typical reverse recovery charge (Qrr) of the body diode?
The typical reverse recovery charge is 24 nC at TJ = 25°C, VR = 51 V, IF = 47 A, and di/dt = 100 A/μs. At 125°C, Qrr increases to 35 nC. This value directly impacts switching loss in synchronous rectifier applications and must be included in gate driver sizing calculations.
IRFR1018ETRRPBF Specifications
- Product attributes
- Attribute value
- Manufacturer:
- Infineon Technologies
- Series:
- HEXFET®
- Package/Case:
- TO-252-3, DPAK (2 Leads + Tab), SC-63
- Packaging:
- Tape & Reel (TR)
- Product Status:
- Obsolete
- FET Type:
- N-Channel
- Technology:
- MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss):
- 60 V
- Current - Continuous Drain (Id) @ 25°C:
- 56A (Tc)
- Drive Voltage (Max Rds On, Min Rds On):
- 10V
- Rds On (Max) @ Id, Vgs:
- 8.4mOhm @ 47A, 10V
- Vgs(th) (Max) @ Id:
- 4V @ 100µA
- Gate Charge (Qg) (Max) @ Vgs:
- 69 nC @ 10 V
- Vgs (Max):
- ±20V
- Input Capacitance (Ciss) (Max) @ Vds:
- 2290 pF @ 50 V
- FET Feature:
- -
- Power Dissipation (Max):
- 110W (Tc)
- Operating Temperature:
- -55°C ~ 175°C (TJ)
- Grade:
- -
- Qualification:
- -
- Mounting Type:
- Surface Mount
- Supplier Device Package:
- TO-252AA (DPAK)
IRFR1018ETRRPBF FAQ
1.How can I place an order for IRFR1018ETRRPBF through Aetrix?
Please submit a Request for Quotation (RFQ) for IRFR1018ETRRPBF on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.
2.Are the price and stock information for IRFR1018ETRRPBF reliable?
The price and inventory of IRFR1018ETRRPBF are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1018ETRRPBF is usually 5 days.
3.What payment methods are accepted for IRFR1018ETRRPBF?
We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1018ETRRPBF transactions.
Note: Certain payment methods may incur a processing fee.
4.How is shipping managed for IRFR1018ETRRPBF?
IRFR1018ETRRPBF orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.
Once your IRFR1018ETRRPBF order is processed, you will receive an email with the shipment details and tracking number.
Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.
5.How can I obtain technical support or documentation for IRFR1018ETRRPBF?
For technical support, including IRFR1018ETRRPBF datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1018ETRRPBF requirements.
6.How does Aetrix verify that IRFR1018ETRRPBF is sourced from the original manufacturer or authorized distributors?
All IRFR1018ETRRPBF products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1018ETRRPBF meets industry standards.
7.What is the process for return or replacement of IRFR1018ETRRPBF?
All IRFR1018ETRRPBF units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1018ETRRPBF, returns or replacements are accepted under the following conditions:
1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.
2.The issue is reported within 90 days of delivery.
3.The IRFR1018ETRRPBF part is unused and in its original packaging.
Return procedure for IRFR1018ETRRPBF:
1.Submit a request within 90 days.
2.Obtain a Return Material Authorization (RMA) from Aetrix.
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