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Home > Products > Discrete Semiconductor Products > Transistors > FETs, MOSFETs > FETs, MOSFETs

Infineon Technologies IRFR1205

Name: IRFR1205
Brand: Infineon Technologies
SKU: IRFR1205
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

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Part No.:: IRFR1205

Manufacturer:: Infineon Technologies

Category:: FETs, MOSFETs

Package:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Datasheet:: IRFR1205.pdf

Description:: MOSFET N-CH 55V 44A DPAK

Quantity:: RFQ Add To RFQ list

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Inventory:3,652

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Product details

Overview

IRFR1205 from Infineon Technologies (formerly International Rectifier) is a 55V, 44A N-channel surface-mount HEXFET® Power MOSFET in TO-252AA (D-Pak) package, featuring 27 mΩ R_DS(on) at V_GS = 10 V, 65 nC total gate charge, and full unclamped avalanche rating (210 mJ single-pulse). It serves as a high-efficiency synchronous rectifier or primary-side switch in DC-DC converters, motor drivers, and power supplies operating up to 175°C junction temperature.

For engineers reviewing the IRFR1205 datasheet, IRFR1205 pinout, IRFR1205 application, or IRFR1205 equivalent, key selection criteria include its low conduction loss (R_DS(on) = 0.027 Ω), fast switching performance (t_r = 69 ns, t_f = 60 ns), rugged avalanche capability, and thermal resistance of 1.4 °C/W (junction-to-case), critical for high-current, high-reliability industrial and automotive power stages.

Technical Context

The IRFR1205 employs fifth-generation HEXFET silicon optimized for minimal on-resistance per die area while maintaining robust safe-operating-area (SOA) performance across pulse widths from 10 µs to DC. Its gate threshold voltage (2.0–4.0 V) enables direct drive from 3.3 V and 5 V logic controllers without level-shifting.

Integrated body diode with 1.3 V forward voltage at 22 A and 65 ns reverse recovery time supports freewheeling in buck and half-bridge topologies. The device's 5.0 V/ns peak diode recovery dv/dt rating ensures stable operation under fast commutation, and its 110 °C/W junction-to-ambient thermal resistance (PCB mount) reflects standard FR-4 layout dependency.

Key Specifications

Parameter	Value and Actual Design Meaning
V_DSS	55 V - Maximum drain-source blocking voltage before avalanche onset; sets upper limit for bus voltage in 48 V systems.
R_DS(on)	0.027 Ω @ V_GS = 10 V, I_D = 26 A - Directly determines I²R conduction loss; yields ≤31 W dissipation at 44 A continuous.
Q_g	65 nC - Total gate charge required for full turn-on; defines driver current demand and switching energy loss.
t_r/t_f	69 ns / 60 ns @ I_D = 25 A - Fast edge rates reduce switching transition time, lowering dynamic losses in high-frequency (>100 kHz) SMPS.
E_AS	210 mJ - Single-pulse avalanche energy rating; enables reliable operation during inductive turn-off transients without external snubbers.
R_θJC	1.4 °C/W - Junction-to-case thermal resistance; allows precise heatsink sizing when mounted to copper pour or external thermal pad.
I_D (T_C = 100°C)	31 A - Derated continuous current at 100°C case temperature; defines practical current limit in thermally constrained PCB layouts.

Pinout & Package

IRFR1205 is housed in a TO-252AA (D-Pak) surface-mount package with exposed drain pad for thermal and electrical connection. The package features three leads: Gate (Lead 1), Drain (Leads 2 & 4), and Source (Lead 3), with Leads 2 and 4 internally bonded to the same drain metallization.

Pin/Terminal	Circuit Role	Design Meaning
1 - Gate	Control terminal	Receives gate drive signal; requires ≤±20 V bias; 65 nC total charge must be sourced/sunk for full switching.
2 & 4 - Drain	High-side power terminal	Electrically and thermally connected to exposed copper pad; carries full load current and dissipates heat directly to PCB copper.
3 - Source	Reference/return terminal	Serves as power ground reference for gate drive; internal source inductance (7.5 nH) affects high-di/dt ringing.

Key Features

Feature	Design Value
Ultra-low R_DS(on)	27 mΩ enables <1.2 W conduction loss at 20 A, reducing thermal stress in compact 12–48 V power stages.
Surface-mount D-Pak	TO-252AA footprint supports automated assembly and provides 1.4 °C/W thermal path to PCB copper, eliminating discrete heatsinks.
Fully avalanche-rated	210 mJ E_AS and 25 A I_AR allow robust operation in inductive switching without external protection components.
Fast switching	69 ns rise / 60 ns fall times minimize overlap loss in hard-switched topologies, improving efficiency above 200 kHz.
Logic-level compatible	V_GS(th) range (2.0–4.0 V) permits direct interface with microcontroller GPIO or low-voltage gate drivers (e.g., 3.3 V MCU outputs).

Applications

DC-DC Buck Converter

Automotive Body Control Module

Use Scenario: High-efficiency 12 V to 3.3 V/5 V point-of-load conversion in infotainment head units.

IC Role / Device Role: Synchronous rectifier in secondary-side FET position, replacing Schottky diode to reduce conduction loss.

Use Value: 27 mΩ R_DS(on) cuts rectifier loss by >60% vs. 40 V Schottky, enabling >92% efficiency at 15 A output with no forced air cooling.

Use Scenario: Load switching for HVAC actuators, window lift motors, and LED lighting in 12 V vehicle electrical architecture.

IC Role / Device Role: Low-side power switch controlled by CAN/LIN microcontroller GPIO pins.

Use Value: 2.0–4.0 V V_GS(th) ensures reliable turn-on from 3.3 V MCU outputs; 175°C T_J rating sustains operation in engine-bay-adjacent modules.

Industrial Motor Drive Half-Bridge

UPS Inverter Stage

Use Scenario: 24–48 V BLDC motor control in warehouse automation conveyors and robotic arms.

IC Role / Device Role: High-side and low-side switching element in 3-phase inverter leg, driven by isolated gate drivers.

Use Value: 210 mJ E_AS withstands back-EMF spikes during sudden motor stop; 5.0 V/ns dv/dt rating prevents false triggering during fast voltage transitions.

Use Scenario: 48 V battery-backed AC inverter for telecom and data center UPS systems.

IC Role / Device Role: Output stage switch in push-pull or full-bridge topology delivering 500–1000 VA sinusoidal output.

Use Value: 31 A continuous current at 100°C case temperature supports sustained 800 VA output with passive heatsinking; SOA curve validated to 1 ms pulses.

Equivalent & Alternatives

The following parts are listed as comparable options for similar N-channel power MOSFET applications.

Alternative Part	Technical Difference	Application Difference	Selection Advice
STP120N55F7	R_DS(on) = 0.022 Ω (lower), Q_g = 72 nC (higher), TO-220 package (not surface-mount)	Requires through-hole assembly and external heatsink; unsuitable for space-constrained PCBs using D-Pak footprints.	Select only if board layout allows TO-220 mounting and lower R_DS(on) justifies higher gate drive power and larger footprint.
ON Semiconductor NTMFS5C670NL	R_DS(on) = 0.025 Ω, Q_g = 52 nC (lower), same TO-252AA package, but rated only to 150°C T_J	Lacks full 175°C operation and 210 mJ avalanche rating; not qualified for automotive under-hood use per AEC-Q101.	Prefer for cost-sensitive consumer power supplies where 150°C max junction temperature suffices and avalanche robustness is non-critical.

Compared with STP120N55F7 and NTMFS5C670NL, IRFR1205 uniquely balances ultra-low R_DS(on), surface-mount D-Pak compatibility, 175°C operation, and certified avalanche ruggedness-making it the only choice for thermally dense, safety-critical industrial and automotive power switches requiring zero derating margin.

Availability

IRFR1205 is available at Aetrix Electronics and suitable for DC-DC converters, motor drives, uninterruptible power supplies, and automotive body electronics requiring stable component supply across multi-year production cycles.

Supply support for IRFR1205 includes scheduled delivery planning, volume procurement assistance, BOM continuity management, traceable sourcing, and lifecycle availability coordination for OEM customers, industrial embedded developers, connected-device designers, and electronics production programs.

Manufacturer

Infineon Technologies is a global semiconductor leader specializing in power management, sensor, and automotive ICs, with core expertise in silicon and wide-bandgap power devices.

The IRFR1205 belongs to Infineon's legacy HEXFET® Power MOSFET product line, engineered for high-current, high-reliability switching in industrial power supplies, motor controls, and automotive subsystems demanding ruggedness and thermal resilience.

FAQ

What is the maximum continuous drain current for IRFR1205 at 100°C case temperature?

The IRFR1205 supports 31 A continuous drain current at T_C = 100°C, as specified in the Absolute Maximum Ratings table. This value accounts for thermal derating from the 44 A rating at 25°C case temperature and reflects practical limits under real PCB thermal conditions with standard FR-4 mounting.

Does IRFR1205 require a gate resistor for stability in switching applications?

Yes - a gate resistor (typically 10–25 Ω) is recommended to dampen ringing caused by interaction between gate drive impedance and the device's 7.5 nH source inductance and 4.5 nH drain inductance. Test circuits in the datasheet (Fig. 10a/b) specify R_G = 12 Ω for switching time measurements.

Can IRFR1205 replace IRFU1205 in a design?

Yes - IRFR1205 and IRFU1205 share identical electrical specifications and silicon die, differing only in package: IRFR1205 uses surface-mount TO-252AA (D-Pak), while IRFU1205 uses through-hole TO-251AA (I-Pak). Pinout and thermal performance differ; PCB layout must match the selected package.

Is the body diode in IRFR1205 suitable for synchronous rectification?

No - the integrated body diode has 1.3 V forward voltage at 22 A and 65 ns reverse recovery time, making it inefficient for high-frequency synchronous rectification. For that function, a dedicated low-V_F Schottky or GaN FET is preferred; IRFR1205 is best used as a controlled switch, not a passive rectifier.

IRFR1205 Specifications

Product attributes: Attribute value

Manufacturer:: Infineon Technologies

Series:: HEXFET®

Package/Case:: TO-252-3, DPAK (2 Leads + Tab), SC-63

Packaging:: Tube

Product Status:: Obsolete

FET Type:: N-Channel

Technology:: MOSFET (Metal Oxide)

Drain to Source Voltage (Vdss):: 55 V

Current - Continuous Drain (Id) @ 25°C:: 44A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: 10V

Rds On (Max) @ Id, Vgs:: 27mOhm @ 26A, 10V

Vgs(th) (Max) @ Id:: 4V @ 250µA

Gate Charge (Qg) (Max) @ Vgs:: 65 nC @ 10 V

Vgs (Max):: ±20V

Input Capacitance (Ciss) (Max) @ Vds:: 1300 pF @ 25 V

FET Feature:: -

Power Dissipation (Max):: 107W (Tc)

Operating Temperature:: -55°C ~ 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-252AA (DPAK)

IRFR1205 FAQ

1.How can I place an order for IRFR1205 through Aetrix?

Please submit a Request for Quotation (RFQ) for IRFR1205 on Aetrix. Our sales agent will provide a competitive quotation and guide you through the order confirmation once you accept the terms.

2.Are the price and stock information for IRFR1205 reliable?

The price and inventory of IRFR1205 are updated periodically and may fluctuate due to market conditions. Stock and pricing data are typically refreshed every 24 hours. Quotation validity for IRFR1205 is usually 5 days.

3.What payment methods are accepted for IRFR1205?

We accept Wire Transfer, PayPal, Credit Card, Western Union, MoneyGram, and Escrow for IRFR1205 transactions.

Note: Certain payment methods may incur a processing fee.

4.How is shipping managed for IRFR1205?

IRFR1205 orders can be shipped via leading logistics carriers, including DHL, UPS, FedEx, TNT, or Registered Mail.

Once your IRFR1205 order is processed, you will receive an email with the shipment details and tracking number.

Note: Tracking information may take up to 24 hours to appear. Express delivery typically takes 3–5 business days.

5.How can I obtain technical support or documentation for IRFR1205?

For technical support, including IRFR1205 datasheets, pinout diagrams, or application guidance, please contact our engineering support team. They can provide detailed documentation and assistance for your IRFR1205 requirements.

6.How does Aetrix verify that IRFR1205 is sourced from the original manufacturer or authorized distributors?

All IRFR1205 products on Aetrix are procured from qualified distributors and authorized channels. Our dedicated quality assurance team conducts strict verification, including traceability checks and, if necessary, third-party testing. This ensures that IRFR1205 meets industry standards.

7.What is the process for return or replacement of IRFR1205?

All IRFR1205 units undergo pre-shipment inspection (PSI). If there is an issue with IRFR1205, returns or replacements are accepted under the following conditions:

1.Quantity discrepancies, incorrect items, or visible external defects (such as breakage or corrosion), acknowledged by Aetrix.

2.The issue is reported within 90 days of delivery.

3.The IRFR1205 part is unused and in its original packaging.

Return procedure for IRFR1205:

1.Submit a request within 90 days.

2.Obtain a Return Material Authorization (RMA) from Aetrix.

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